Double-ended passivator enables dark-current-suppressed colloidal quantum dot photodiodes for CMOS-integrated infrared imagers

IF 22.7 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Infomat Pub Date : 2023-12-13 DOI:10.1002/inf2.12497
Peilin Liu, Shuaicheng Lu, Jing Liu, Bing Xia, Gaoyuan Yang, Mo Ke, Xuezhi Zhao, Junrui Yang, Yuxuan Liu, Ciyu Ge, Guijie Liang, Wei Chen, Xinzheng Lan, Jianbing Zhang, Liang Gao, Jiang Tang
{"title":"Double-ended passivator enables dark-current-suppressed colloidal quantum dot photodiodes for CMOS-integrated infrared imagers","authors":"Peilin Liu,&nbsp;Shuaicheng Lu,&nbsp;Jing Liu,&nbsp;Bing Xia,&nbsp;Gaoyuan Yang,&nbsp;Mo Ke,&nbsp;Xuezhi Zhao,&nbsp;Junrui Yang,&nbsp;Yuxuan Liu,&nbsp;Ciyu Ge,&nbsp;Guijie Liang,&nbsp;Wei Chen,&nbsp;Xinzheng Lan,&nbsp;Jianbing Zhang,&nbsp;Liang Gao,&nbsp;Jiang Tang","doi":"10.1002/inf2.12497","DOIUrl":null,"url":null,"abstract":"<p>Lead sulfide (PbS) colloidal quantum dot (CQD) photodiodes integrated with silicon-based readout integrated circuits (ROICs) offer a promising solution for the next-generation short-wave infrared (SWIR) imaging technology. Despite their potential, large-size CQD photodiodes pose a challenge due to high dark currents resulting from surface states on non-passivated (100) facets and trap states generated by CQD fusion. In this work, we present a novel approach to address this issue by introducing double-ended ligands that supplementally passivate (100) facets of halide-capped large-size CQDs, leading to suppressed bandtail states and reduced defect concentration. Our results demonstrate that the dark current density is highly suppressed by about an order of magnitude to 9.6 nA cm<sup>−2</sup> at −10 mV, which is among the lowest reported for PbS CQD photodiodes. Furthermore, the performance of the photodiodes is exemplary, yielding an external quantum efficiency of 50.8% (which corresponds to a responsivity of 0.532 A W<sup>−1</sup>) and a specific detectivity of 2.5 × 10<sup>12</sup> Jones at 1300 nm. By integrating CQD photodiodes with CMOS ROICs, the CQD imager provides high-resolution (640 × 512) SWIR imaging for infrared penetration and material discrimination.</p><p>\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":null,"pages":null},"PeriodicalIF":22.7000,"publicationDate":"2023-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.12497","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infomat","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/inf2.12497","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Lead sulfide (PbS) colloidal quantum dot (CQD) photodiodes integrated with silicon-based readout integrated circuits (ROICs) offer a promising solution for the next-generation short-wave infrared (SWIR) imaging technology. Despite their potential, large-size CQD photodiodes pose a challenge due to high dark currents resulting from surface states on non-passivated (100) facets and trap states generated by CQD fusion. In this work, we present a novel approach to address this issue by introducing double-ended ligands that supplementally passivate (100) facets of halide-capped large-size CQDs, leading to suppressed bandtail states and reduced defect concentration. Our results demonstrate that the dark current density is highly suppressed by about an order of magnitude to 9.6 nA cm−2 at −10 mV, which is among the lowest reported for PbS CQD photodiodes. Furthermore, the performance of the photodiodes is exemplary, yielding an external quantum efficiency of 50.8% (which corresponds to a responsivity of 0.532 A W−1) and a specific detectivity of 2.5 × 1012 Jones at 1300 nm. By integrating CQD photodiodes with CMOS ROICs, the CQD imager provides high-resolution (640 × 512) SWIR imaging for infrared penetration and material discrimination.

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双端钝化剂使暗电流抑制胶体量子点光电二极管适用于 CMOS 集成式红外成像仪
与硅基读出集成电路(ROIC)集成的硫化铅(PbS)胶体量子点(CQD)光电二极管为下一代短波红外(SWIR)成像技术提供了一种前景广阔的解决方案。尽管大尺寸 CQD 光电二极管潜力巨大,但由于非钝化(100)面上的表面态和 CQD 融合产生的陷阱态导致的高暗电流,大尺寸 CQD 光电二极管仍面临挑战。在这项工作中,我们提出了一种解决这一问题的新方法,即引入双端配体来补充钝化卤化物封端的大尺寸 CQD 的(100)面,从而抑制带尾态并降低缺陷浓度。我们的研究结果表明,在 -10 mV 电压下,暗电流密度被高度抑制到 9.6 nA cm-2,约为一个数量级,这是目前已报道的 PbS CQD 光电二极管中最低的。此外,该光电二极管的性能也堪称典范,其外部量子效率为 50.8%(相当于 0.532 A W-1),在 1300 nm 波长处的比检测率为 2.5 × 1012 Jones。通过将 CQD 光电二极管与 CMOS ROIC 集成,CQD 成像仪可提供高分辨率(640 × 512)的 SWIR 成像,用于红外穿透和材料鉴别。
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来源期刊
Infomat
Infomat MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
37.70
自引率
3.10%
发文量
111
审稿时长
8 weeks
期刊介绍: InfoMat, an interdisciplinary and open-access journal, caters to the growing scientific interest in novel materials with unique electrical, optical, and magnetic properties, focusing on their applications in the rapid advancement of information technology. The journal serves as a high-quality platform for researchers across diverse scientific areas to share their findings, critical opinions, and foster collaboration between the materials science and information technology communities.
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