Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process

IF 2.3 4区 物理与天体物理 Q3 PHYSICS, APPLIED Applied Physics Express Pub Date : 2023-12-19 DOI:10.35848/1882-0786/ad0db9
Biplab Sarkar, Jia Wang, Oves Badami, Tanmoy Pramanik, Woong Kwon, Hirotaka Watanabe and Hiroshi Amano
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Abstract

In this letter, we show that low-cost physical vapor deposition of Mg followed by a thermal diffusion annealing process increases the effective barrier height at the metal/Ga-polar GaN Schottky interface. Thus, for the first time, GaN Camel diodes with improved barrier height and turn-on voltage were realized compared to regular GaN Schottky barrier diodes. Temperature-dependent current–voltage characteristics indicated a near-homogeneous and near-ideal behavior of the GaN Camel diode. The analysis performed in this work is thought to be promising for improving the performance of future GaN-based unipolar diodes.
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通过低成本镁扩散工艺实现极性氮化镓骆驼二极管
在这封信中,我们展示了低成本物理气相沉积镁后的热扩散退火工艺可提高金属/镓极GaN肖特基界面的有效势垒高度。因此,与普通的氮化镓肖特基势垒二极管相比,我们首次实现了势垒高度和导通电压更高的氮化镓骆驼二极管。与温度相关的电流-电压特性表明,氮化镓骆驼二极管具有接近均匀和接近理想的特性。这项工作中进行的分析被认为有望改善未来基于氮化镓的单极二极管的性能。
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来源期刊
Applied Physics Express
Applied Physics Express 物理-物理:应用
CiteScore
4.80
自引率
8.70%
发文量
310
审稿时长
1.2 months
期刊介绍: Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
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