Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2023-12-19 DOI:10.1007/s10825-023-02121-w

引用次数: 0

Abstract

The modeling of self-heating in GaN-based devices is presented in this paper. A setup for DC I–V and short pulse I–V was used to characterize the device. This paper used four different methods to estimate self-heating, thermal resistance, and channel temperature in a GaN-based high electron mobility transistor (HEMT) fabricated on a SiC substrate. The procedures are basic and straightforward, making them suitable for determining self-heating. We concentrated on reducing the number of measurements needed to determine self-heating and/or channel temperature for any applied ambient temperatures. In addition, a summary of channel temperature for different GaN HEMTs found in—literatures is also presented. Finally, all of the findings are compared using a fair difference threshold. This work reflects an essential and comprehensive understanding of device technology.

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用于 AlGaN/GaN HEMT 温度测量的电学调查比较研究

摘要本文介绍了氮化镓基器件的自热建模。采用直流 I-V 和短脉冲 I-V 设置来表征器件。本文采用四种不同的方法来估算在碳化硅衬底上制造的基于氮化镓的高电子迁移率晶体管（HEMT）的自热、热阻和沟道温度。这些方法简单明了，适用于确定自热。我们专注于减少在任何应用环境温度下确定自热和/或沟道温度所需的测量次数。此外，我们还总结了文献中不同 GaN HEMT 的沟道温度。最后，使用公平差异阈值对所有研究结果进行了比较。这项工作反映了对器件技术的基本而全面的理解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.