{"title":"High-Transconductance and Low-Leakage Current Single Aluminum Nitride Nanowire Field Effect Transistor","authors":"K. Teker","doi":"10.4028/p-kxpr2q","DOIUrl":null,"url":null,"abstract":"This study presents electrical transport properties of a catalyst-free grown single aluminum nitride nanowire field effect transistor (AlNNW-FET) exhibiting a very high transconductance of 26.9 pS, high on/off current ratio of 795.9, high conductivity of 9.8 x 10-4 Ω-1.cm-1, and a very low leakage current of 10 pA. The conductivity of AlN nanowire is two orders of magnitude higher than the reported studies. The AlNNW-FET reveals a dominant p-type conductivity. The p-type conductivity can be attributed to aluminum vacancies and complexes composed of Al vacancies and oxygen impurities. In consequence, the fabricated AlNNW-FET with high-performance, cost-effectiveness, and high-power efficiency is very well suited for use in low power and high temperature nanoelectronic and piezoelectric sensor applications, as well as integrated electro-optical devices including optomechanical devices and pyroelectric photodetectors.","PeriodicalId":16525,"journal":{"name":"Journal of Nano Research","volume":"61 14","pages":""},"PeriodicalIF":0.8000,"publicationDate":"2023-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Nano Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.4028/p-kxpr2q","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
This study presents electrical transport properties of a catalyst-free grown single aluminum nitride nanowire field effect transistor (AlNNW-FET) exhibiting a very high transconductance of 26.9 pS, high on/off current ratio of 795.9, high conductivity of 9.8 x 10-4 Ω-1.cm-1, and a very low leakage current of 10 pA. The conductivity of AlN nanowire is two orders of magnitude higher than the reported studies. The AlNNW-FET reveals a dominant p-type conductivity. The p-type conductivity can be attributed to aluminum vacancies and complexes composed of Al vacancies and oxygen impurities. In consequence, the fabricated AlNNW-FET with high-performance, cost-effectiveness, and high-power efficiency is very well suited for use in low power and high temperature nanoelectronic and piezoelectric sensor applications, as well as integrated electro-optical devices including optomechanical devices and pyroelectric photodetectors.
本研究介绍了一种无催化剂生长的单根氮化铝纳米线场效应晶体管（AlNNW-FET）的电传输特性，该晶体管具有 26.9 pS 的超高跨导、795.9 的高导通/关断电流比、9.8 x 10-4 Ω-1.cm-1 的高电导率以及 10 pA 的超低漏电流。AlN 纳米线的电导率比已报道的研究高出两个数量级。AlNNW-FET 显示出主要的 p 型导电性。这种 p 型导电性可归因于铝空位以及由铝空位和氧杂质组成的复合物。因此，所制备的 AlNNW-FET 具有高性能、高性价比和高功率效率的特点，非常适合用于低功耗、高温的纳米电子和压电传感器应用，以及包括光机电器件和热释电光电探测器在内的集成光电器件。
期刊介绍：
"Journal of Nano Research" (JNanoR) is a multidisciplinary journal, which publishes high quality scientific and engineering papers on all aspects of research in the area of nanoscience and nanotechnologies and wide practical application of achieved results.
"Journal of Nano Research" is one of the largest periodicals in the field of nanoscience and nanotechnologies. All papers are peer-reviewed and edited.
Authors retain the right to publish an extended and significantly updated version in another periodical.
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