Thermosensitive generators based on single-junction and field-effect transistors

Abstract

The effect of temperature on the characteristics of generators based on a single-junction transistor (SNT) was experimentally investigated. It is shown that when using an OPT generator as a sensor with a frequency output, field-effect transistors are inserted into the circuit of the OPT emitter and base to increase the dependence of the frequency on the temperature. To obtain a direct dependence of the frequency on the temperature, a field-effect MDN transistor is introduced into the emitter circuit of the OPT, and to obtain an inverse dependence, a field-effect transistor with a p-n junction is used as a gate. The maximum sensitivity with a direct dependence is achieved when an MDN transistor is included in the emitter circuit of the OPT, and a transistor with a p-n junction is included in the base circuit. The influence of radiation on the thermal sensitivity of generators was investigated. The component transistors were irradiated with a stream of electrons, γ-quanta and neutrons. It was established that the irradiation of each transistor affects the output frequency of the generator differently, it either decreases or increases. It is shown that using transistors with the opposite sign of the generator frequency change during radiation, it is possible to reduce the dependence of the output frequency on radiation. The maximum compensation of the effect of radiation on the output signal can be obtained when using an MDN transistor in the emitter circuit of the OPT, and a transistor with a p-n junction in the base circuit. Limit values of flows of various radiations, after which the generator stops working, have been established.