Selective Gamma-Ray Ionisation of Vanadium Oxides: Towards the Formation of VO2

M. Ndiaye, O. Sakh, A. Seck, B. Ngom, M. Maaza, M. Chaker
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Abstract

In this study, we report on the valence control of vanadium oxidation states towards stabilising VO2 thin films. X-ray diffraction measurements indicate that up to 300 kGy of gamma-ray radiation the VO2 phase remains monoclinic, with the crystallite size only varying slightly with the dose. X-ray photoemission spectroscopy indicates the presence of three oxide phases (VO2, V2O3 and V2O5) on the samples. A decrease in the oxidation states of V3+ and V5+ and an increase in the valence state V4+ are observed for irradiations up to 300 kGy, which favours the vanadium dioxide VO2 formation.
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氧化钒的选择性伽马射线电离:生成二氧化钒
在这项研究中,我们报告了钒氧化态对稳定 VO2 薄膜的价态控制。X 射线衍射测量结果表明,在 300 kGy 伽马射线辐射下,VO2 相仍保持单斜,结晶尺寸仅随剂量略有变化。X 射线光发射光谱表明,样品上存在三种氧化物相(VO2、V2O3 和 V2O5)。在 300 kGy 的辐照下,V3+ 和 V5+ 的氧化态降低,价态 V4+ 增加,这有利于二氧化钒 VO2 的形成。
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