Raman fingerprint of the graphene buffer layer grown on the Si-terminated face of 4H-SiC(0001): Experiment and theory

IF 2.4 3区 化学 Q2 SPECTROSCOPY Journal of Raman Spectroscopy Pub Date : 2023-12-19 DOI:10.1002/jrs.6642
Teodor Milenov, Peter Rafailov, Rositsa Yakimova, Ivan Shtepliuk, Valentin Popov
{"title":"Raman fingerprint of the graphene buffer layer grown on the Si-terminated face of 4H-SiC(0001): Experiment and theory","authors":"Teodor Milenov,&nbsp;Peter Rafailov,&nbsp;Rositsa Yakimova,&nbsp;Ivan Shtepliuk,&nbsp;Valentin Popov","doi":"10.1002/jrs.6642","DOIUrl":null,"url":null,"abstract":"<p>In this work, we present the results of measurements of the Raman spectrum of the √3x√3R30° reconstruction of graphene grown on 4H-SiC(0001), the so-called buffer layer. The extracted Raman spectrum of the buffer layer shows bands, different from those of graphene, which can be attributed to the interaction of the buffer layer with the SiC substrate. In particular, in the high-wavenumber region, at least three bands are observed in the wavenumber regions 1,350–1,420, 1,470–1,490 and 1,520–1,570 cm<sup>−1</sup>. The assignment of the buffer layer bands is supported here by tight-binding simulations of the one-phonon density of states for structures with a sufficiently large number of Si-C bilayers for reaching convergence. The converged phonon density of states is found to be in semi-quantitative agreement with the latter two bands, and therefore, the tight-binding predictions of the lattice dynamics of the structure can be used for their assignment to buffer layer vibrations. Namely, the Raman band at about 1,550 cm<sup>−1</sup> can be assigned to modified in-plane optical phonon branches of graphene, while the Raman band at about 1,490 cm<sup>−1</sup> can be assigned to modified folded parts of these branches inside the Brillouin zone of the buffer layer and can be considered as a Raman fingerprint of the buffer layer.</p>","PeriodicalId":16926,"journal":{"name":"Journal of Raman Spectroscopy","volume":"55 3","pages":"416-424"},"PeriodicalIF":2.4000,"publicationDate":"2023-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Raman Spectroscopy","FirstCategoryId":"92","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jrs.6642","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"SPECTROSCOPY","Score":null,"Total":0}
引用次数: 0

Abstract

In this work, we present the results of measurements of the Raman spectrum of the √3x√3R30° reconstruction of graphene grown on 4H-SiC(0001), the so-called buffer layer. The extracted Raman spectrum of the buffer layer shows bands, different from those of graphene, which can be attributed to the interaction of the buffer layer with the SiC substrate. In particular, in the high-wavenumber region, at least three bands are observed in the wavenumber regions 1,350–1,420, 1,470–1,490 and 1,520–1,570 cm−1. The assignment of the buffer layer bands is supported here by tight-binding simulations of the one-phonon density of states for structures with a sufficiently large number of Si-C bilayers for reaching convergence. The converged phonon density of states is found to be in semi-quantitative agreement with the latter two bands, and therefore, the tight-binding predictions of the lattice dynamics of the structure can be used for their assignment to buffer layer vibrations. Namely, the Raman band at about 1,550 cm−1 can be assigned to modified in-plane optical phonon branches of graphene, while the Raman band at about 1,490 cm−1 can be assigned to modified folded parts of these branches inside the Brillouin zone of the buffer layer and can be considered as a Raman fingerprint of the buffer layer.

Abstract Image

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
生长在 4H-SiC(0001) 硅端面的石墨烯缓冲层的拉曼指纹:实验与理论
在这项工作中,我们展示了在 4H-SiC(0001) 上生长的石墨烯(即所谓的缓冲层)的 √3x√3R30° 重构拉曼光谱的测量结果。提取的缓冲层拉曼光谱显示出不同于石墨烯的频带,这些频带可归因于缓冲层与碳化硅基底的相互作用。特别是在高波长区,在 1,350-1,420 厘米、1,470-1,490 厘米和 1,520-1,570 厘米-1 波长区至少观察到三条带。对具有足够多 Si-C 双层结构的单声子状态密度进行的紧密结合模拟支持了缓冲层带的指定。收敛后的声子态密度与后两个带具有半定量的一致性,因此,结构晶格动力学的紧密结合预测可用于将它们分配给缓冲层振动。也就是说,约 1,550 cm-1 处的拉曼频带可归属于石墨烯的改良面内光学声子分支,而约 1,490 cm-1 处的拉曼频带可归属于缓冲层布里渊区内这些分支的改良折叠部分,并可视为缓冲层的拉曼指纹。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
CiteScore
5.40
自引率
8.00%
发文量
185
审稿时长
3.0 months
期刊介绍: The Journal of Raman Spectroscopy is an international journal dedicated to the publication of original research at the cutting edge of all areas of science and technology related to Raman spectroscopy. The journal seeks to be the central forum for documenting the evolution of the broadly-defined field of Raman spectroscopy that includes an increasing number of rapidly developing techniques and an ever-widening array of interdisciplinary applications. Such topics include time-resolved, coherent and non-linear Raman spectroscopies, nanostructure-based surface-enhanced and tip-enhanced Raman spectroscopies of molecules, resonance Raman to investigate the structure-function relationships and dynamics of biological molecules, linear and nonlinear Raman imaging and microscopy, biomedical applications of Raman, theoretical formalism and advances in quantum computational methodology of all forms of Raman scattering, Raman spectroscopy in archaeology and art, advances in remote Raman sensing and industrial applications, and Raman optical activity of all classes of chiral molecules.
期刊最新文献
Issue Information Issue Information Sensitivity of the C–H Stretching Band in Raman Spectra to Phospholipid Order A Novel Incident Circular Polarized Light Raman Optical Activity (ICP‐ROA) Spectrometer With Advanced Polarization Control Micro‐Raman Spectroscopy for the Identification of Drawing Materials Used Throughout the 17th and 20th Centuries
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1