Shengwen Xie, Lili Xie, Ruiqing Chai, Jiushuang Zhang, Qiyang Sun, Xu Zhang, Yao Yao, Ben Fan, Liqun Dai, Hongbo Bu, Ruimeng Zhang, Ruiming Chen
{"title":"Composition disorder in InAs/InAsSb superlattice by STM","authors":"Shengwen Xie, Lili Xie, Ruiqing Chai, Jiushuang Zhang, Qiyang Sun, Xu Zhang, Yao Yao, Ben Fan, Liqun Dai, Hongbo Bu, Ruimeng Zhang, Ruiming Chen","doi":"10.1117/12.3005383","DOIUrl":null,"url":null,"abstract":"The interfacial asymmetry and compositional disorder caused by atomic segregation and exchange significantly affect the electrical properties of the InAs/InAsSb superlattice, leading to deviations from original designs. The study presents a quantitative analysis of the compositional asymmetry of the superlattice and its effects using a segregation model and 8-band k.p model. The composition disorder at each interface, primarily induced by Sb segregation, is examined through the reconstruction of the actual atomic sequence structure based on scanning tunneling microscopy results. Three different atomistic structures of the superlattice are modeled using the k.p method, including the ideal MBE-growth structure, a rebuilt structure with Sb segregation only at the InAs-on-InAsSb interface, and a rebuilt structure with Sb segregation at both interfaces. The results of the modeling highlight the significant influence of Sb segregation on the electronic properties of InAs/InAsSb superlattices.","PeriodicalId":298662,"journal":{"name":"Applied Optics and Photonics China","volume":" 37","pages":"129630F - 129630F-5"},"PeriodicalIF":0.0000,"publicationDate":"2023-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Optics and Photonics China","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.3005383","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The interfacial asymmetry and compositional disorder caused by atomic segregation and exchange significantly affect the electrical properties of the InAs/InAsSb superlattice, leading to deviations from original designs. The study presents a quantitative analysis of the compositional asymmetry of the superlattice and its effects using a segregation model and 8-band k.p model. The composition disorder at each interface, primarily induced by Sb segregation, is examined through the reconstruction of the actual atomic sequence structure based on scanning tunneling microscopy results. Three different atomistic structures of the superlattice are modeled using the k.p method, including the ideal MBE-growth structure, a rebuilt structure with Sb segregation only at the InAs-on-InAsSb interface, and a rebuilt structure with Sb segregation at both interfaces. The results of the modeling highlight the significant influence of Sb segregation on the electronic properties of InAs/InAsSb superlattices.
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