Zhuoyun Li, Yang Chen, Qing Wang, Mingbin Yu, Shuxiao Wang, Yan Cai
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引用次数: 0
Abstract
Applying various functional materials to silicon to enhance the functionality of silicon photonics is a potential solution for silicon photonics platform under the requirement of CMOS compatibility. In this paper, two LN heterogeneous integration platforms have been proposed. One is the integration of LN film with a 220 nm top silicon SOI platform, in which the simulated results demonstrate that the designed modulator has a low half wave-voltage length product of 2.27 V·cm. And the other is the integration of LN film with a 400 nm top silicon nitride on insulator platform, in which the the proposed device achieves a VpiL of 2.58 V·cm and a 3-dB bandwidth of ~130 GHz with 7-mm long modulation region is verified by simulation.
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