Ahmet Bi̇lgi̇li̇, Ömer Akpinar, Naki Kaya, M. Öztürk
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Abstract
In this study, Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a sapphire (Al2O3) substrate by using metal-organic vapor phase epitaxy (MOVPE), and its electron transport and magnetic transport properties are investigated. Resistivity is measured in the 20-350 K temperature range. Hall mobility and Hall carrier concentration are measured in the 0-1.5 T magnetic field range and the same temperature range. Magnetic transport properties are analyzed using quantitative mobility spectrum analysis (QMSA). 2DEG and 3DEG transport mechanisms are separated by using QMSA results.
本研究利用金属有机气相外延（MOVPE）技术，在蓝宝石（Al2O3）衬底上生长出 Al 0.3 Ga 0.7 N/GaN 高电子迁移率晶体管（HEMT）结构，并对其电子传输和磁传输特性进行了研究。电阻率是在 20-350 K 温度范围内测量的。霍尔迁移率和霍尔载流子浓度是在 0-1.5 T 磁场范围和相同温度范围内测量的。利用定量迁移率谱分析（QMSA）分析了磁传输特性。利用 QMSA 分析结果区分了 2DEG 和 3DEG 传输机制。
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