Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Semiconductor Science and Technology Pub Date : 2023-12-15 DOI:10.1088/1361-6641/ad160d

Yingqiang Wei, Jinghe Wei, Wei Zhao, Suzhen Wu, Yidan Wei, Meijie Liu, Zhiyuan Sui, Ying Zhou, Yuqi Li, Hong Chang, Fei Ji, Weibin Wang, Lijun Yang, Guozhu Liu

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Abstract

We fabricated enhancement-mode p-GaN gate GaN HEMT with multiple field plates (MFPs) and analyzed the reliability of devices by means of simulation and experiment in this paper. The simulation of electric-field distribution indicates that the MFPs effectively weaken the electric field peak near gate to below theoretical breakdown value and smooth the electric field between the gate edge and drain-side field plate edge. The simulated electric field peak leading to the breakdown of device with MFPs at high drain voltage is located on drain edge, which is validated by experimental results. The GaN HEMTs with MFPs exhibit excellent long-term reliability under high temperature and high drain voltage, while deviations of threshold voltage and on-resistance were observed in the device subjected to drain stress. We attribute the deviations to electron accumulation and high field-assisted detrapping process in the p-GaN layer. This investigation will provide some new insight into understanding the mechanism of variations in threshold voltage and on-resistance under off-state drain stress.

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具有多场板的增强模式 p-GaN 栅 GaN HEMT 的可靠性

本文制作了带有多场板（MFP）的增强型 p-GaN 栅极 GaN HEMT，并通过仿真和实验分析了器件的可靠性。电场分布仿真表明，多场板有效地削弱了栅极附近的电场峰值，使其低于理论击穿值，并使栅极边缘和漏极侧场板边缘之间的电场变得平滑。在高漏极电压下，导致带有 MFP 的器件击穿的模拟电场峰值位于漏极边缘，这也得到了实验结果的验证。带有 MFP 的 GaN HEMT 在高温和高漏极电压条件下表现出出色的长期可靠性，而在漏极应力作用下，器件的阈值电压和导通电阻出现了偏差。我们将这些偏差归因于 p-GaN 层中的电子积累和高场辅助脱离过程。这项研究将为理解离态漏极应力下阈值电压和导通电阻的变化机制提供一些新的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.