Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates

IF 16.4 1区 化学 Q1 CHEMISTRY, MULTIDISCIPLINARY Accounts of Chemical Research Pub Date : 2023-12-15 DOI:10.1088/1361-6641/ad160d
Yingqiang Wei, Jinghe Wei, Wei Zhao, Suzhen Wu, Yidan Wei, Meijie Liu, Zhiyuan Sui, Ying Zhou, Yuqi Li, Hong Chang, Fei Ji, Weibin Wang, Lijun Yang, Guozhu Liu
{"title":"Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates","authors":"Yingqiang Wei, Jinghe Wei, Wei Zhao, Suzhen Wu, Yidan Wei, Meijie Liu, Zhiyuan Sui, Ying Zhou, Yuqi Li, Hong Chang, Fei Ji, Weibin Wang, Lijun Yang, Guozhu Liu","doi":"10.1088/1361-6641/ad160d","DOIUrl":null,"url":null,"abstract":"\n We fabricated enhancement-mode p-GaN gate GaN HEMT with multiple field plates (MFPs) and analyzed the reliability of devices by means of simulation and experiment in this paper. The simulation of electric-field distribution indicates that the MFPs effectively weaken the electric field peak near gate to below theoretical breakdown value and smooth the electric field between the gate edge and drain-side field plate edge. The simulated electric field peak leading to the breakdown of device with MFPs at high drain voltage is located on drain edge, which is validated by experimental results. The GaN HEMTs with MFPs exhibit excellent long-term reliability under high temperature and high drain voltage, while deviations of threshold voltage and on-resistance were observed in the device subjected to drain stress. We attribute the deviations to electron accumulation and high field-assisted detrapping process in the p-GaN layer. This investigation will provide some new insight into understanding the mechanism of variations in threshold voltage and on-resistance under off-state drain stress.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2023-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad160d","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

We fabricated enhancement-mode p-GaN gate GaN HEMT with multiple field plates (MFPs) and analyzed the reliability of devices by means of simulation and experiment in this paper. The simulation of electric-field distribution indicates that the MFPs effectively weaken the electric field peak near gate to below theoretical breakdown value and smooth the electric field between the gate edge and drain-side field plate edge. The simulated electric field peak leading to the breakdown of device with MFPs at high drain voltage is located on drain edge, which is validated by experimental results. The GaN HEMTs with MFPs exhibit excellent long-term reliability under high temperature and high drain voltage, while deviations of threshold voltage and on-resistance were observed in the device subjected to drain stress. We attribute the deviations to electron accumulation and high field-assisted detrapping process in the p-GaN layer. This investigation will provide some new insight into understanding the mechanism of variations in threshold voltage and on-resistance under off-state drain stress.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
具有多场板的增强模式 p-GaN 栅 GaN HEMT 的可靠性
本文制作了带有多场板(MFP)的增强型 p-GaN 栅极 GaN HEMT,并通过仿真和实验分析了器件的可靠性。电场分布仿真表明,多场板有效地削弱了栅极附近的电场峰值,使其低于理论击穿值,并使栅极边缘和漏极侧场板边缘之间的电场变得平滑。在高漏极电压下,导致带有 MFP 的器件击穿的模拟电场峰值位于漏极边缘,这也得到了实验结果的验证。带有 MFP 的 GaN HEMT 在高温和高漏极电压条件下表现出出色的长期可靠性,而在漏极应力作用下,器件的阈值电压和导通电阻出现了偏差。我们将这些偏差归因于 p-GaN 层中的电子积累和高场辅助脱离过程。这项研究将为理解离态漏极应力下阈值电压和导通电阻的变化机制提供一些新的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Accounts of Chemical Research
Accounts of Chemical Research 化学-化学综合
CiteScore
31.40
自引率
1.10%
发文量
312
审稿时长
2 months
期刊介绍: Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance. Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.
期刊最新文献
The change process questionnaire (CPQ): A psychometric validation. Differential Costs of Raising Grandchildren on Older Mother-Adult Child Relations in Black and White Families. Does Resilience Mediate the Relationship Between Negative Self-Image and Psychological Distress in Middle-Aged and Older Gay and Bisexual Men? Intergenerational Relations and Well-being Among Older Middle Eastern/Arab American Immigrants During the COVID-19 Pandemic. Caregiving Appraisals and Emotional Valence: Moderating Effects of Activity Participation.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1