Insights into the copper HiPIMS discharge: deposition rate and ionised flux fraction

J Fischer, M Renner, J T Gudmundsson, M Rudolph, H Hajihoseini, N Brenning, D Lundin
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Abstract

The influence of pulse length, working gas pressure, and peak discharge current density on the deposition rate and ionised flux fraction in high power impulse magnetron sputtering discharges of copper is investigated experimentally using a charge-selective (electrically biasable) magnetically shielded quartz crystal microbalance (or ionmeter). The large explored parameter space covers both common process conditions and extreme cases. The measured ionised flux fraction for copper is found to be in the range from ≈10% to 80%, and to increase with increasing peak discharge current density up to a maximum at 1.25Acm2 , before abruptly falling off at even higher current density values. Low working gas pressure is shown to be beneficial in terms of both ionised flux fraction and deposition rate fraction. For example, decreasing the working gas pressure from 1.0 Pa to 0.5 Pa leads on average to an increase of the ionised flux fraction by 14  percentage points (pp) and of the deposition rate fraction by 4pp taking into account all the investigated pulse lengths.
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洞察铜 HiPIMS 放电:沉积率和电离通量分数
我们使用电荷选择性(电偏压)磁屏蔽石英晶体微天平(或离子计),通过实验研究了脉冲长度、工作气体压力和峰值放电电流密度对高功率脉冲磁控溅射铜放电中沉积率和电离通量分数的影响。所探索的参数空间很大,既包括常见的工艺条件,也包括极端情况。测量发现,铜的电离通量分数在 ≈10% 到 80% 之间,并随着峰值放电电流密度的增加而增加,在 ≈1.25Acm-2 时达到最大值,然后在更高的电流密度值时突然下降。低工作气体压力对电离通量分数和沉积率分数都有好处。例如,将工作气体压力从 1.0 Pa 降低到 0.5 Pa,平均可使电离通量分数增加 ≈14 个百分点 (pp),考虑到所有研究的脉冲长度,沉积率分数增加 ≈4pp。
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