Relaxation effects on the structural and piezoelectric properties of wurtzite ZnS and CdS thin films under in-plane strain

IF 2.6 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronic Engineering Pub Date : 2023-12-29 DOI:10.1016/j.mee.2023.112131
Dongsheng Wang , Xuewen Li , Guoqiang Qin
{"title":"Relaxation effects on the structural and piezoelectric properties of wurtzite ZnS and CdS thin films under in-plane strain","authors":"Dongsheng Wang ,&nbsp;Xuewen Li ,&nbsp;Guoqiang Qin","doi":"10.1016/j.mee.2023.112131","DOIUrl":null,"url":null,"abstract":"<div><p><span><span><span>Through first-principles investigations, we examine variations in the atomic crystal structure<span>, thermal stability, electronic structure, and piezoelectric properties of </span></span>wurtzite ZnS and CdS under in-plane strain. We specifically aim to elucidate the distinct effects arising from two relaxation modes: elastic and non-elastic. Our analyses reveal that the in-plane strain-induced </span>deformation behaviors<span> and performance changes in these sulfides are remarkably similar, attributable to the similar atomic arrangements<span>, anionic sulfur elements, and analogous cation electronic configurations. However, following non-elastic relaxation, enhanced robustness emerges in the lattice volume and chemical bonding, alongside stronger thermal stability and attenuated modifications in the piezoelectric coefficient. We posit that these marked discrepancies from elastic relaxation may originate from subtle differences in the electronegativities and </span></span></span><em>d</em>-orbital electron configurations between the Zn<sup>2+</sup> and Cd<sup>2+</sup> cations. By offering fundamental new insights into the atomic-scale relaxation phenomena in wurtzite binaries, this work significantly furthers the fundamental understanding of structure-property relationships in these materials. Moreover, delineating the precise impacts of elastic versus non-elastic relaxation serves as an effective tuning methodology to engineer the piezoelectric and electronic traits of sulfide compounds for cutting-edge applications.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6000,"publicationDate":"2023-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S016793172300196X","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Through first-principles investigations, we examine variations in the atomic crystal structure, thermal stability, electronic structure, and piezoelectric properties of wurtzite ZnS and CdS under in-plane strain. We specifically aim to elucidate the distinct effects arising from two relaxation modes: elastic and non-elastic. Our analyses reveal that the in-plane strain-induced deformation behaviors and performance changes in these sulfides are remarkably similar, attributable to the similar atomic arrangements, anionic sulfur elements, and analogous cation electronic configurations. However, following non-elastic relaxation, enhanced robustness emerges in the lattice volume and chemical bonding, alongside stronger thermal stability and attenuated modifications in the piezoelectric coefficient. We posit that these marked discrepancies from elastic relaxation may originate from subtle differences in the electronegativities and d-orbital electron configurations between the Zn2+ and Cd2+ cations. By offering fundamental new insights into the atomic-scale relaxation phenomena in wurtzite binaries, this work significantly furthers the fundamental understanding of structure-property relationships in these materials. Moreover, delineating the precise impacts of elastic versus non-elastic relaxation serves as an effective tuning methodology to engineer the piezoelectric and electronic traits of sulfide compounds for cutting-edge applications.

Abstract Image

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
面内应变对晶圆 ZnS 和 CdS 薄膜结构和压电特性的弛豫效应
通过第一原理研究,我们考察了晶格状 ZnS 和 CdS 在面内应变下的原子晶体结构、热稳定性、电子结构和压电特性的变化。我们的具体目标是阐明弹性和非弹性两种弛豫模式所产生的不同影响。我们的分析表明,平面内应变引起的变形行为和性能变化在这些硫化物中非常相似,这归因于相似的原子排列、阴离子硫元素和类似的阳离子电子构型。然而,在非弹性弛豫之后,晶格体积和化学键的稳健性增强,同时热稳定性提高,压电系数的变化减弱。我们认为,这些与弹性弛豫的明显差异可能源于 Zn2+ 和 Cd2+ 阳离子之间电负性和 d 轨道电子构型的微妙差异。通过对乌兹特双晶中的原子尺度弛豫现象提供新的基本见解,这项研究极大地促进了对这些材料的结构-性能关系的基本理解。此外,划定弹性弛豫与非弹性弛豫的精确影响可作为一种有效的调整方法,用于设计硫化物化合物的压电和电子特性,以实现尖端应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Microelectronic Engineering
Microelectronic Engineering 工程技术-工程:电子与电气
CiteScore
5.30
自引率
4.30%
发文量
131
审稿时长
29 days
期刊介绍: Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
期刊最新文献
Origin of charges in bulk Si:HfO2 FeFET probed by nanosecond polarization measurements On the mechanical properties of ultrathin titanium nitride films under different gas ratios of PVD process A 10 kHz bandwidth low-power active negative feedback front-end amplifier based on unipolar IZO TFT technology Dynamics of set and reset processes in HfO2 -based bipolar resistive switching devices A novel high-Q Lamé mode bulk acoustic resonator
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1