Microelectronic Engineering最新文献

英文中文

Simulation and optimization of reactor airflow and magnetic field for enhanced thin film uniformity in physical vapor deposition 模拟和优化反应器气流和磁场，提高物理气相沉积过程中的薄膜均匀性

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering

Pub Date : 2024-11-26 DOI: 10.1016/j.mee.2024.112294

Yongshuan Wu , Kefan Liu , Pengcheng She , Junhui Li

Planar magnetron sputtering reactors are widely utilized in the semiconductor industry due to their high deposition rate, low substrate temperature, and capability for large-area coating. Careful control of the reactor's flow field and magnetic field is essential to ensure appropriate thickness uniformity of the thin film and uniform etching of the target. Utilizing finite element analysis software, simulations were conducted to obtain numerical solutions for the airflow and magnetic field. An increase in the inlet diameter from 4 mm to 5 mm resulted in a 63.4 % decrease in the gas distribution unevenness coefficient. Conversely, increasing the outlet diameter from 1 mm to 2 mm led to a 636.6 % increase in the coefficient. At a pitch of 11.7 mm, the horizontal magnetic field component on the target surface peaked at 0.24 T, covering a larger area. A dual-runway structure reduced the circumferential component of the horizontal magnetic field by more than half. Analysis of the results precipitated the optimization of key component structures, resulting in an optimal solution: an air ring diameter of 5 mm, an outlet diameter of 1 mm, outlet spacing of 12 mm, double inlets, and 38 outlets on each side of the air ring. Further optimization determined the optimal magnet-to-target surface spacing of 11.7 mm, with the dual-runway structure effectively improving the uniformity of the radial magnetic field distribution and increasing the target etching area. This study provides a theoretical basis for optimizing planar magnetron sputtering reactors.

平面磁控溅射反应器因其高沉积率、低基底温度和大面积镀膜能力而广泛应用于半导体行业。对反应器流场和磁场的精心控制对于确保适当的薄膜厚度均匀性和靶材的均匀蚀刻至关重要。利用有限元分析软件进行了模拟，以获得气流和磁场的数值解。进气口直径从 4 毫米增加到 5 毫米后，气体分布不均匀系数降低了 63.4%。相反，将出口直径从 1 毫米增加到 2 毫米，该系数增加了 636.6%。当间距为 11.7 毫米时，目标表面的水平磁场分量达到 0.24 T 的峰值，覆盖面积更大。双通道结构将水平磁场的圆周分量减少了一半以上。对结果进行分析后，对关键部件结构进行了优化，最终确定了一个最佳解决方案：空气环直径为 5 毫米，出气口直径为 1 毫米，出气口间距为 12 毫米，双进气口，空气环两侧各有 38 个出气口。进一步优化确定的最佳磁铁与目标表面间距为 11.7 毫米，双通道结构有效改善了径向磁场分布的均匀性，并增加了目标蚀刻面积。这项研究为优化平面磁控溅射反应器提供了理论依据。

{"title":"Simulation and optimization of reactor airflow and magnetic field for enhanced thin film uniformity in physical vapor deposition","authors":"Yongshuan Wu , Kefan Liu , Pengcheng She , Junhui Li","doi":"10.1016/j.mee.2024.112294","DOIUrl":"10.1016/j.mee.2024.112294","url":null,"abstract":"<div><div>Planar magnetron sputtering reactors are widely utilized in the semiconductor industry due to their high deposition rate, low substrate temperature, and capability for large-area coating. Careful control of the reactor's flow field and magnetic field is essential to ensure appropriate thickness uniformity of the thin film and uniform etching of the target. Utilizing finite element analysis software, simulations were conducted to obtain numerical solutions for the airflow and magnetic field. An increase in the inlet diameter from 4 mm to 5 mm resulted in a 63.4 % decrease in the gas distribution unevenness coefficient. Conversely, increasing the outlet diameter from 1 mm to 2 mm led to a 636.6 % increase in the coefficient. At a pitch of 11.7 mm, the horizontal magnetic field component on the target surface peaked at 0.24 T, covering a larger area. A dual-runway structure reduced the circumferential component of the horizontal magnetic field by more than half. Analysis of the results precipitated the optimization of key component structures, resulting in an optimal solution: an air ring diameter of 5 mm, an outlet diameter of 1 mm, outlet spacing of 12 mm, double inlets, and 38 outlets on each side of the air ring. Further optimization determined the optimal magnet-to-target surface spacing of 11.7 mm, with the dual-runway structure effectively improving the uniformity of the radial magnetic field distribution and increasing the target etching area. This study provides a theoretical basis for optimizing planar magnetron sputtering reactors.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"296 ","pages":"Article 112294"},"PeriodicalIF":2.6,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142722999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High inductance 3D arch inductor based on non-photosensitive polyimide 基于非光敏聚酰亚胺的高电感三维拱形电感器

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering

Pub Date : 2024-11-20 DOI: 10.1016/j.mee.2024.112291

Zepeng Wang , Qianzhen Su , Chao Zhang , Bo Zhang , Xiaolong Wen , Haoyuan Zhao , Dandan Liu , Jingliang Li , Jianhua Li

Due to their low parasitic capacitance, minimal substrate losses, and high inductance values, three-dimensional MEMS inductors are increasingly used in microelectronics applications, such as MEMS sensors, RF MEMS, and energy storage devices. Conventional fabrication techniques, including UV-LIGA lithography and through‑silicon vias (TSV), are commonly employed to create high-aspect-ratio structures for 3D inductors. However, these processes are often complex and challenging. To simplify the process, we proposed a novel fabrication method for arched inductors utilizing non-photosensitive polyimide. The high viscosity of polyimide facilitates the formation of sloped sidewalls during development, eliminating the need for high-aspect-ratio structures in the inductor fabrication. By controlling the development time, we achieve the desired polyimide sidewall morphology. Additionally, to achieve high inductance, a high-permeability Co-based amorphous alloy wire was used as the magnetic core of the inductor. The maximum inductance of the inductor can reach 1710 nH at an excitation frequency of 71.4 MHz.

三维 MEMS 电感器具有寄生电容低、基片损耗小和电感值高等优点，因此越来越多地应用于微电子领域，如 MEMS 传感器、射频 MEMS 和储能设备。传统的制造技术，包括 UV-LIGA 光刻技术和硅通孔 (TSV) 技术，通常用于制造高宽比结构的三维电感器。然而，这些工艺往往复杂且具有挑战性。为了简化工艺，我们提出了一种利用非光敏聚酰亚胺制造弧形电感器的新方法。聚酰亚胺的高粘度有利于在显影过程中形成倾斜的侧壁，从而无需在电感器制造过程中采用高宽比结构。通过控制显影时间，我们可以获得所需的聚酰亚胺侧壁形态。此外，为了实现高电感，我们还使用了一种高渗透性 Co 基非晶合金丝作为电感器的磁芯。在 71.4 MHz 的激励频率下，电感器的最大电感可达 1710 nH。

{"title":"High inductance 3D arch inductor based on non-photosensitive polyimide","authors":"Zepeng Wang , Qianzhen Su , Chao Zhang , Bo Zhang , Xiaolong Wen , Haoyuan Zhao , Dandan Liu , Jingliang Li , Jianhua Li","doi":"10.1016/j.mee.2024.112291","DOIUrl":"10.1016/j.mee.2024.112291","url":null,"abstract":"<div><div>Due to their low parasitic capacitance, minimal substrate losses, and high inductance values, three-dimensional MEMS inductors are increasingly used in microelectronics applications, such as MEMS sensors, RF MEMS, and energy storage devices. Conventional fabrication techniques, including UV-LIGA lithography and through‑silicon vias (TSV), are commonly employed to create high-aspect-ratio structures for 3D inductors. However, these processes are often complex and challenging. To simplify the process, we proposed a novel fabrication method for arched inductors utilizing non-photosensitive polyimide. The high viscosity of polyimide facilitates the formation of sloped sidewalls during development, eliminating the need for high-aspect-ratio structures in the inductor fabrication. By controlling the development time, we achieve the desired polyimide sidewall morphology. Additionally, to achieve high inductance, a high-permeability Co-based amorphous alloy wire was used as the magnetic core of the inductor. The maximum inductance of the inductor can reach 1710 nH at an excitation frequency of 71.4 MHz.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"296 ","pages":"Article 112291"},"PeriodicalIF":2.6,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of uniform, periodic arrays of exotic AlN nanoholes by combining dry etching and hot selective wet etching, accessing geometries unrealisable from wet etching of planar AlN 将干法蚀刻和热选择性湿法蚀刻相结合，制造出均匀、周期性的奇异氮化铝纳米孔阵列，获得平面氮化铝湿法蚀刻无法实现的几何形状

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering

Pub Date : 2024-11-08 DOI: 10.1016/j.mee.2024.112263

Robert Fraser Armstrong , Philip Shields

Aluminium nitride (AlN) is a wide bandgap semiconductor with far reaching realised and potential applications in electronics and optoelectronic technology. For example, gallium nitride (GaN) quantum dots (QDs) housed within an AlN matrix are attractive due to the large bandgap offsets. However, making suitable AlN sites to house GaN QDs is challenging due to the difficulty in fashioning 3D AlN structures. This results from AlN's strong bonds that are difficult to chemically etch.

Whilst dry etching of AlN nanostructures has been explored, wet etching at the nanoscale has been limited by the common exposed facet of AlN being etch-resistant. Hence, wet etching of AlN to create uniform arrays of periodic nanohole nanostructures has, thus far, not been heavily explored.

In this paper, an initial dry etching of a 2D AlN planar template is used to expose alternative wet-etchable facets so that periodic arrays of nanohole structures are revealed by wet-etching. Both a study of different initial dry etched structures, including tapered nanoholes, and wet etching time were performed. A model to describe the dynamics of wet etching on the different dry etched nanohole structures is proposed. Periodic arrays of uniform nanohole features are realised that hold promise for applications such as the housing of site-controlled quantum dots.

氮化铝（AlN）是一种宽带隙半导体，在电子和光电技术领域具有深远的应用前景和潜力。例如，氮化镓（GaN）量子点（QDs）被安置在氮化铝基体中，由于具有较大的带隙偏移，因此很有吸引力。然而，由于难以形成三维氮化镓结构，因此制造合适的氮化镓基点来容纳氮化镓量子点具有挑战性。虽然对氮化铝纳米结构的干法蚀刻已经进行了探索，但纳米尺度的湿法蚀刻却因氮化铝的普通裸露面具有抗蚀刻性而受到限制。因此，迄今为止，还没有人对通过湿法刻蚀氮化铝来创建均匀的周期性纳米孔纳米结构阵列进行过深入探讨。本文利用二维氮化铝平面模板的初始干法刻蚀来暴露可供选择的湿法刻蚀面，从而通过湿法刻蚀显示出周期性纳米孔结构阵列。对不同的初始干蚀刻结构（包括锥形纳米孔）和湿蚀刻时间都进行了研究。提出了一个模型来描述湿蚀刻对不同干蚀刻纳米孔结构的动态影响。均匀纳米孔特征的周期性阵列得以实现，有望应用于场所控制量子点的封装等领域。

{"title":"Fabrication of uniform, periodic arrays of exotic AlN nanoholes by combining dry etching and hot selective wet etching, accessing geometries unrealisable from wet etching of planar AlN","authors":"Robert Fraser Armstrong , Philip Shields","doi":"10.1016/j.mee.2024.112263","DOIUrl":"10.1016/j.mee.2024.112263","url":null,"abstract":"<div><div>Aluminium nitride (AlN) is a wide bandgap semiconductor with far reaching realised and potential applications in electronics and optoelectronic technology. For example, gallium nitride (GaN) quantum dots (QDs) housed within an AlN matrix are attractive due to the large bandgap offsets. However, making suitable AlN sites to house GaN QDs is challenging due to the difficulty in fashioning 3D AlN structures. This results from AlN's strong bonds that are difficult to chemically etch.</div><div>Whilst dry etching of AlN nanostructures has been explored, wet etching at the nanoscale has been limited by the common exposed facet of AlN being etch-resistant. Hence, wet etching of AlN to create uniform arrays of periodic nanohole nanostructures has, thus far, not been heavily explored.</div><div>In this paper, an initial dry etching of a 2D AlN planar template is used to expose alternative wet-etchable facets so that periodic arrays of nanohole structures are revealed by wet-etching. Both a study of different initial dry etched structures, including tapered nanoholes, and wet etching time were performed. A model to describe the dynamics of wet etching on the different dry etched nanohole structures is proposed. Periodic arrays of uniform nanohole features are realised that hold promise for applications such as the housing of site-controlled quantum dots.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"295 ","pages":"Article 112263"},"PeriodicalIF":2.6,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142660680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Origin of charges in bulk Si:HfO2 FeFET probed by nanosecond polarization measurements 通过纳秒极化测量探究块状 Si:HfO2 FeFET 中电荷的来源

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering

Pub Date : 2024-11-06 DOI: 10.1016/j.mee.2024.112284

Mor Mordechai Dahan , Halid Mulaosmanovic , Or Levit , Stefan Dünkel , Johannes Müller , Sven Beyer , Eilam Yalon

FeFET technology offers the potential for fast, energy-efficient, low-cost, and high-capacity non-volatile memory and neuromorphic devices. However, charge trapping significantly affects device operation, leading to issues like read-after-write delay and limited endurance. Therefore, a detailed understanding of charge trapping, charge origin and its role in polarization switching is crucial. In this study, we uncover the spectral energy origin of polarization charges in Si:HfO₂ N-FeFET by probing electron (conduction band) and hole (valence band) currents separately during polarization-voltage (P–V) measurements. We utilize a fast (∼20 ns) and modified positive-up-negative-down (PUND) technique, where bulk, source, and drain currents of the FeFET are measured separately. The nanosecond timescale of the measurement results in measurable currents in FeFETs having dimensions of a few μm. This charge separation shows that program (PRG, V_GS > 0) charge originates from the conduction band, whereas erase (ERS, V_GS < 0) originates from the valence band of the Si. Moreover, the polarization curve (P–V) of a cycled device (following 5000 PRG/ERS pulses) shows measurable hysteresis even though the transfer curve of the same device shows that the memory window in the threshold voltage vanishes. Therefore, the FeFET polarization state can be read without delay after write operation by the fast PUND measurement, both for pristine and cycled FeFETs.

FeFET 技术为快速、节能、低成本、高容量的非易失性存储器和神经形态器件提供了潜力。然而，电荷捕获会严重影响器件的运行，导致读写延迟和耐用性受限等问题。因此，详细了解电荷捕获、电荷起源及其在极化转换中的作用至关重要。在本研究中，我们通过在极化电压（P-V）测量过程中分别探测电子（导带）和空穴（价带）电流，揭示了 Si:HfO2 N-FeFET 中极化电荷的光谱能量来源。我们利用快速（∼20 ns）和改进的正上-负下（PUND）技术，分别测量 FeFET 的体电流、源电流和漏电流。测量的纳秒级时间尺度可测量出尺寸仅为几微米的 FeFET 中的电流。电荷分离表明，编程（PRG，VGS >0）电荷来自导带，而擦除（ERS，VGS <0）电荷来自硅的价带。此外，一个循环器件的极化曲线（P-V）（5000 PRG/ERS 脉冲之后）显示了可测量的滞后，尽管同一器件的转移曲线显示阈值电压的记忆窗口消失了。因此，通过快速 PUND 测量，可在写入操作后立即读取 FeFET 的极化状态，无论是原始 FeFET 还是循环 FeFET。

{"title":"Origin of charges in bulk Si:HfO2 FeFET probed by nanosecond polarization measurements","authors":"Mor Mordechai Dahan , Halid Mulaosmanovic , Or Levit , Stefan Dünkel , Johannes Müller , Sven Beyer , Eilam Yalon","doi":"10.1016/j.mee.2024.112284","DOIUrl":"10.1016/j.mee.2024.112284","url":null,"abstract":"<div><div>FeFET technology offers the potential for fast, energy-efficient, low-cost, and high-capacity non-volatile memory and neuromorphic devices. However, charge trapping significantly affects device operation, leading to issues like read-after-write delay and limited endurance. Therefore, a detailed understanding of charge trapping, charge origin and its role in polarization switching is crucial. In this study, we uncover the spectral energy origin of polarization charges in Si:HfO<sub>2</sub> N-FeFET by probing electron (conduction band) and hole (valence band) currents separately during polarization-voltage (<em>P–V</em>) measurements. We utilize a fast (∼20 ns) and modified positive-up-negative-down (PUND) technique, where bulk, source, and drain currents of the FeFET are measured separately. The nanosecond timescale of the measurement results in measurable currents in FeFETs having dimensions of a few μm. This charge separation shows that program (PRG, <em>V</em><sub>GS</sub> > 0) charge originates from the conduction band, whereas erase (ERS, <em>V</em><sub>GS</sub> < 0) originates from the valence band of the Si. Moreover, the polarization curve (<em>P–V</em>) of a cycled device (following 5000 PRG/ERS pulses) shows measurable hysteresis even though the transfer curve of the same device shows that the memory window in the threshold voltage vanishes. Therefore, the FeFET polarization state can be read without delay after write operation by the fast PUND measurement, both for pristine and cycled FeFETs.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"296 ","pages":"Article 112284"},"PeriodicalIF":2.6,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142593419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On the mechanical properties of ultrathin titanium nitride films under different gas ratios of PVD process 论 PVD 工艺中不同气体比例下超薄氮化钛薄膜的力学性能

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering

Pub Date : 2024-11-03 DOI: 10.1016/j.mee.2024.112283

Yao-Zih Lai , Weileun Fang

Titanium Nitride (TiN_x) thin film has numerous applications in semiconductors, nanotechnology, and various aspects of daily life. This study presents an approach to adjusting the mechanical properties of TiN_x ultrathin films, including Young's modulus, residual stress, and coefficients of thermal expansion (CTE), by varying the gas ratio of N₂ and Ar during the Physical Vapor Deposition (PVD) process (DC magnetron sputtering). In the experiment, TiN_x films with three different gas ratios R_N (= N₂/(N₂ + Ar)) were investigated. To demonstrate the feasibility of this approach, TiN_x films with different R_N values (0.3, 0.5, and 0.8) were deposited on SiO₂ beams to form composite test cantilevers. Measurements reveal significant changes (ranging from 33 % to 2-fold) in Young's modulus, residual stress, and CTE of the TiN_x films by varying the gas ratio during the PVD process. As a result, this study provides a straightforward approach and guidelines for users to tailor TiN_x films according to specific application requirements.

氮化钛（TiNx）薄膜在半导体、纳米技术和日常生活的各个方面有着广泛的应用。本研究提出了一种在物理气相沉积（PVD）过程（直流磁控溅射）中通过改变 N2 和 Ar 的气体比例来调整 TiNx 超薄薄膜机械性能的方法，包括杨氏模量、残余应力和热膨胀系数（CTE）。实验中研究了三种不同气体比例 RN（= N2/（N2 + Ar））的 TiNx 薄膜。为了证明这种方法的可行性，在二氧化硅梁上沉积了不同 RN 值（0.3、0.5 和 0.8）的 TiNx 薄膜，以形成复合测试悬臂。测量结果表明，通过在 PVD 过程中改变气体比例，TiNx 薄膜的杨氏模量、残余应力和 CTE 都发生了显著变化（从 33% 到 2 倍不等）。因此，这项研究为用户根据特定应用要求定制 TiNx 薄膜提供了直接的方法和指导。

{"title":"On the mechanical properties of ultrathin titanium nitride films under different gas ratios of PVD process","authors":"Yao-Zih Lai , Weileun Fang","doi":"10.1016/j.mee.2024.112283","DOIUrl":"10.1016/j.mee.2024.112283","url":null,"abstract":"<div><div>Titanium Nitride (TiN<sub>x</sub>) thin film has numerous applications in semiconductors, nanotechnology, and various aspects of daily life. This study presents an approach to adjusting the mechanical properties of TiN<sub>x</sub> ultrathin films, including Young's modulus, residual stress, and coefficients of thermal expansion (CTE), by varying the gas ratio of N<sub>2</sub> and Ar during the Physical Vapor Deposition (PVD) process (DC magnetron sputtering). In the experiment, TiN<sub>x</sub> films with three different gas ratios R<sub>N</sub> (= N<sub>2</sub>/(N<sub>2</sub> + Ar)) were investigated. To demonstrate the feasibility of this approach, TiN<sub>x</sub> films with different R<sub>N</sub> values (0.3, 0.5, and 0.8) were deposited on SiO<sub>2</sub> beams to form composite test cantilevers. Measurements reveal significant changes (ranging from 33 % to 2-fold) in Young's modulus, residual stress, and CTE of the TiN<sub>x</sub> films by varying the gas ratio during the PVD process. As a result, this study provides a straightforward approach and guidelines for users to tailor TiN<sub>x</sub> films according to specific application requirements.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"296 ","pages":"Article 112283"},"PeriodicalIF":2.6,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142586678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 10 kHz bandwidth low-power active negative feedback front-end amplifier based on unipolar IZO TFT technology 基于单极 IZO TFT 技术的 10 kHz 带宽低功耗有源负反馈前端放大器

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering

Pub Date : 2024-11-01 DOI: 10.1016/j.mee.2024.112282

Mingjian Zhao, Yunfang Wang, Xinge Shi, Bin Li, Rongsheng Chen, Zhaohui Wu

In this paper, we present a wide-bandwidth low-power front-end amplifier based on thin-film transistors (TFTs). The amplifier with the active negative feedback structure in the form of the common source is proposed, which achieves wide bandwidth under the condition of low power consumption. In addition, the capacitor bootstrap load structure is used in the core operational transconductance amplifier (OTA) circuit, which improves the loop gain. The proposed amplifier adopts the 10 μm channel length unipolar n-type indium‑zinc-oxide (IZO) TFT technology, with an area of 2 mm². The test results show a gain of 36.3 dB, a bandwidth of 10 kHz, and a power consumption of 0.04 mW at a supply voltage of 10 V. The proposed amplifier is advanced in bandwidth, power, and area, has successfully obtained and amplified real-time electrocardiogram (ECG) and electromyography (EMG) signals, and also has excellent noise efficiency factor (NEF) and power efficiency factor (PEF). Therefore, the design has potential in the field of flexible bioelectrical signal detection and other wearable electronic devices in the future.

本文提出了一种基于薄膜晶体管（TFT）的宽带低功耗前端放大器。该放大器采用共源形式的有源负反馈结构，在低功耗条件下实现了宽带宽。此外，在核心运算跨导放大器（OTA）电路中采用了电容自举负载结构，从而提高了环路增益。所提出的放大器采用 10 μm 沟道长度的单极 n 型氧化铟锌（IZO）TFT 技术，面积为 2 mm2。测试结果表明，在 10 V 电源电压下，放大器的增益为 36.3 dB，带宽为 10 kHz，功耗为 0.04 mW。所提出的放大器在带宽、功耗和面积方面都很先进，成功地获取并放大了实时心电图（ECG）和肌电图（EMG）信号，还具有出色的噪声效率因子（NEF）和功率效率因子（PEF）。因此，该设计在未来的柔性生物电信号检测和其他可穿戴电子设备领域具有潜力。

{"title":"A 10 kHz bandwidth low-power active negative feedback front-end amplifier based on unipolar IZO TFT technology","authors":"Mingjian Zhao, Yunfang Wang, Xinge Shi, Bin Li, Rongsheng Chen, Zhaohui Wu","doi":"10.1016/j.mee.2024.112282","DOIUrl":"10.1016/j.mee.2024.112282","url":null,"abstract":"<div><div>In this paper, we present a wide-bandwidth low-power front-end amplifier based on thin-film transistors (TFTs). The amplifier with the active negative feedback structure in the form of the common source is proposed, which achieves wide bandwidth under the condition of low power consumption. In addition, the capacitor bootstrap load structure is used in the core operational transconductance amplifier (OTA) circuit, which improves the loop gain. The proposed amplifier adopts the 10 μm channel length unipolar n-type indium‑zinc-oxide (IZO) TFT technology, with an area of 2 mm<sup>2</sup>. The test results show a gain of 36.3 dB, a bandwidth of 10 kHz, and a power consumption of 0.04 mW at a supply voltage of 10 V. The proposed amplifier is advanced in bandwidth, power, and area, has successfully obtained and amplified real-time electrocardiogram (ECG) and electromyography (EMG) signals, and also has excellent noise efficiency factor (NEF) and power efficiency factor (PEF). Therefore, the design has potential in the field of flexible bioelectrical signal detection and other wearable electronic devices in the future.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"296 ","pages":"Article 112282"},"PeriodicalIF":2.6,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142586679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamics of set and reset processes in HfO2 -based bipolar resistive switching devices 基于 HfO2 的双极电阻开关器件中的设定和复位过程的动态变化

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering

Pub Date : 2024-10-28 DOI: 10.1016/j.mee.2024.112281

G. Vinuesa , H. García , M.B. González , F. Campabadal , H. Castán , S. Dueñas

The temporal evolution of the set and reset processes in TiN/Ti/HfO₂/W metal-insulator-metal devices exhibiting resistive switching behavior is investigated in depth. To this end, current transients were recorded by applying different voltages, which allowed us to change the conductance of the device. While both set and reset transitions are faster with increasing applied voltage, they clearly exhibit different time responses. The set transition is characterized by a monotonic increase in current after a sudden initial rise in its value, while the reset transition is characterized by a notably nonlinear response that resembles a sigmoidal function. We have successfully modeled the reset current transient with a bi-dose function and defined its time constant (Time-to-Reset) as the time where the current variation reaches its maximum value. Our findings show that varying the initial conditions of the reset process, such as increasing the temperature and/or decreasing the initial resistance value, significantly affect the reset transient, exponentially increasing the reset time constant value. This allows us to model its dependencies with the equation of a plane.

我们深入研究了表现出电阻开关行为的 TiN/Ti/HfO2/W 金属绝缘体-金属器件中设定和复位过程的时间演变。为此，我们通过施加不同的电压来记录瞬态电流，从而改变器件的电导率。虽然设定和复位转换随着施加电压的增加而加快，但它们明显表现出不同的时间响应。设定转换的特点是电流值在最初突然上升后单调上升，而复位转换的特点则是明显的非线性响应，类似于正余弦函数。我们成功地用双剂量函数模拟了复位电流瞬态，并将其时间常数（复位时间）定义为电流变化达到最大值的时间。我们的研究结果表明，改变复位过程的初始条件（如提高温度和/或降低初始电阻值）会显著影响复位瞬态，并以指数形式增加复位时间常数值。因此，我们可以用平面方程来模拟其相关性。

{"title":"Dynamics of set and reset processes in HfO2 -based bipolar resistive switching devices","authors":"G. Vinuesa , H. García , M.B. González , F. Campabadal , H. Castán , S. Dueñas","doi":"10.1016/j.mee.2024.112281","DOIUrl":"10.1016/j.mee.2024.112281","url":null,"abstract":"<div><div>The temporal evolution of the set and reset processes in TiN/Ti/HfO<sub>2</sub>/W metal-insulator-metal devices exhibiting resistive switching behavior is investigated in depth. To this end, current transients were recorded by applying different voltages, which allowed us to change the conductance of the device. While both set and reset transitions are faster with increasing applied voltage, they clearly exhibit different time responses. The set transition is characterized by a monotonic increase in current after a sudden initial rise in its value, while the reset transition is characterized by a notably nonlinear response that resembles a sigmoidal function. We have successfully modeled the reset current transient with a bi-dose function and defined its time constant (Time-to-Reset) as the time where the current variation reaches its maximum value. Our findings show that varying the initial conditions of the reset process, such as increasing the temperature and/or decreasing the initial resistance value, significantly affect the reset transient, exponentially increasing the reset time constant value. This allows us to model its dependencies with the equation of a plane.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"296 ","pages":"Article 112281"},"PeriodicalIF":2.6,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142571762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A novel high-Q Lamé mode bulk acoustic resonator 新型高 Q 值拉美模式体声谐振器

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering

Pub Date : 2024-10-22 DOI: 10.1016/j.mee.2024.112279

Zeyu Wu , Bo Niu , Yiyi Hong , Junyuan Zhao , Yinfang Zhu , Jinling Yang

This study introduces a novel high-Q Lamé mode MEMS resonator, optimized through support beam structures and etching hole distributions to minimize anchor losses and thermal elastic dissipation (TED). Fabricated using a Silicon-On-Insulator (SOI) process, the resonators achieved Q values of 129,200 and 102,100 in different designs, demonstrating significant improvements in vacuum conditions and highlighting air damping as a key loss mechanism. Nonlinear analysis revealed material nonlinearity dominance. These findings offer valuable guidelines for developing high-end MEMS devices, such as low phase noise oscillators and high-resolution sensors, by showcasing substantial reductions in energy dissipation and enhanced Q factors through structural optimizations.

本研究介绍了一种新型高 Q 值拉美模式 MEMS 谐振器，该谐振器通过支撑梁结构和蚀刻孔分布进行了优化，以最大限度地减少锚损耗和热弹性耗散 (TED)。谐振器采用绝缘体上硅（SOI）工艺制造，在不同的设计中分别达到了 129,200 和 102,100 的 Q 值，显示出真空条件下的显著改善，并突出了空气阻尼这一关键损耗机制。非线性分析表明材料非线性占主导地位。这些发现为开发高端 MEMS 器件（如低相位噪声振荡器和高分辨率传感器）提供了宝贵的指导，通过结构优化大幅降低了能量耗散并提高了 Q 值。

引用次数: 0

Nonvolatile logic gate and full adder based on tri-terminal oxide resistive switching devices 基于三端氧化物电阻开关器件的非易失性逻辑门和全加法器

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering

Pub Date : 2024-10-21 DOI: 10.1016/j.mee.2024.112280

Jifang Cao , Jiabao Ye , Tao Wang , Yong Ding , Ran Cheng , Dong Liu , Bing Chen

Today's on-chip computing power is constrained by the “memory wall” and “power wall” caused by the Von Neumann bottleneck. As a potential solution, this work has developed nonvolatile logic gates based on field-effect tri-terminal oxide resistive switching memory devices (3T-RRAM). A compact circuit model using a polynomial control source (PCS) is proposed to describe the behavior of the fabricated 3T-RRAM. The 3T-RRAM can be regarded as a nonvolatile transmission gate for constructing nonvolatile logic gates. Additionally, a full adder with input storage functionality has been designed using only eight 3T-RRAMs (four nonvolatile logic gates), and a binarized neural network (BNN) based on 3T-RRAM logic gate arrays has been proposed. This demonstrates the great potential of nonvolatile logic gates in computing-in-memory applications.

当今的片上计算能力受到冯-诺依曼瓶颈造成的 "内存墙 "和 "电源墙 "的限制。作为一种潜在的解决方案，这项研究开发了基于场效应三端氧化物电阻开关存储器件（3T-RRAM）的非易失性逻辑门。该研究提出了一个使用多项式控制源 (PCS) 的紧凑型电路模型，用于描述所制造的 3T-RRAM 的行为。3T-RRAM 可被视为用于构建非易失性逻辑门的非易失性传输门。此外，仅使用 8 个 3T-RRAM （4 个非易失性逻辑门）就设计出了具有输入存储功能的全加法器，并提出了基于 3T-RRAM 逻辑门阵列的二值化神经网络 (BNN)。这证明了非易失性逻辑门在内存计算应用中的巨大潜力。

引用次数: 0

Simulations of X-ray focusing by zone plates in rotationally symmetric optical field utilizing the matrix-free Finite Difference Beam Propagation Method 利用无矩阵有限差分光束传播法模拟旋转对称光场中区板聚焦 X 射线的过程

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering

Pub Date : 2024-10-19 DOI: 10.1016/j.mee.2024.112278

Hao Quan, Xujie Tong, Qingxin Wu, Qiucheng Chen, Yifang Chen

We present the use of a finite difference method based on Crank-Nicholson scheme and recurrence scheme for computationally efficient simulation of the X-ray propagation through a zone plate. By introducing boundary and central conditions and by avoiding large matrix operations, the method achieves considerable speed, little memory occupation and low background noise. Accommodating refractive index profiles of arbitrary shape, it can be applied to assist optimizing X-ray zone plates and understanding focusing mechanism.

我们介绍了一种基于 Crank-Nicholson 方案和递推方案的有限差分法，用于高效计算模拟 X 射线在区块板上的传播。通过引入边界条件和中心条件以及避免大型矩阵运算，该方法实现了相当快的速度、较少的内存占用和较低的背景噪声。该方法适用于任意形状的折射率剖面，可用于协助优化 X 射线区板和了解聚焦机制。

引用次数: 0

下一页尾页

类型

全部化学•材料生命科学医学物理工程技术环境•农林材料科学地球科学法学管理学化学环境科学与生态学计算机科学教育学经济学农林科学人文科学生物学数学物理与天体物理心理学综合性期刊其他工业工程理学历史学农学文学信息工程

数据库

全部 ACS Publications Elsevier ieeexplore Springer The Royal Society of Chemistry Wiley

期刊

Microelectronic Engineering

全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.

﹀