{"title":"Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface","authors":"Keisuke Utsumi, Hajime Tanaka, Nobuya Mori","doi":"10.35848/1347-4065/ad189c","DOIUrl":null,"url":null,"abstract":"A computational model to simulate the electron scattering by step-terrace structures is proposed. Using the proposed model, the transmission function, conductance, and mean free path are calculated. It is shown that the dependence of the mean free path on the perpendicular electric field, step position fluctuation, and step height is consistent with a surface roughness scattering theory based on the disordered periodicity of the step-terrace structures. It is suggested that the proposed model could be used to simulate the surface roughness scattering due to step-terrace structures in SiC MOS inversion layers.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"10 9","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2023-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad189c","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
A computational model to simulate the electron scattering by step-terrace structures is proposed. Using the proposed model, the transmission function, conductance, and mean free path are calculated. It is shown that the dependence of the mean free path on the perpendicular electric field, step position fluctuation, and step height is consistent with a surface roughness scattering theory based on the disordered periodicity of the step-terrace structures. It is suggested that the proposed model could be used to simulate the surface roughness scattering due to step-terrace structures in SiC MOS inversion layers.
本文提出了一个模拟阶梯梯形结构电子散射的计算模型。利用提出的模型，计算了传输函数、电导和平均自由路径。结果表明，平均自由路径对垂直电场、阶梯位置波动和阶梯高度的依赖性与基于阶梯-台阶结构无序周期性的表面粗糙度散射理论是一致的。建议使用所提出的模型模拟 SiC MOS 反转层中阶梯状台阶结构引起的表面粗糙度散射。
期刊介绍：
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:
• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
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