Pub Date : 2023-09-08DOI: 10.35848/1347-4065/acf823
Ryosuke Noro, Mariko Adachi, Yasufumi Fujiwara, M. Uemukai, T. Tanikawa, R. Katayama
GaN is an attractive material for integrating optical quantum devices. Adding a large optical nonlinearity of MgO doped congruent LiNbO3 (MgO:CLN) to GaN will improve the efficiency of quantum light sources. In this work, we proposed transverse quasi-phase-matched wavelength conversion devices with waveguide core materials of MgO:CLN and GaN. The waveguide core is formed by an adhesion-free surface activated bonding (SAB). A high thin film transfer yield was achieved with a high bonding strength of 4 MPa by optimizing the bonding conditions and reducing the surface roughness of the GaN film to be 0.5 nm in a 100 × 100 μm2 area using chemical mechanical polishing. The MgO:CLN/GaN waveguide structure was successfully fabricated by MgO:CLN thin film transfer, lift-off and dry etching processes. This MgO:CLN/GaN adhesion-free SAB technique is expected to be applied to various devices, such as optical devices and electronic devices, to enhance their functionality.
{"title":"Fabrication of polarity inverted LiNbO3/GaN channel waveguide by surface activated bonding for high-efficiency transverse quasi-phase-matched wavelength conversion","authors":"Ryosuke Noro, Mariko Adachi, Yasufumi Fujiwara, M. Uemukai, T. Tanikawa, R. Katayama","doi":"10.35848/1347-4065/acf823","DOIUrl":"https://doi.org/10.35848/1347-4065/acf823","url":null,"abstract":"GaN is an attractive material for integrating optical quantum devices. Adding a large optical nonlinearity of MgO doped congruent LiNbO3 (MgO:CLN) to GaN will improve the efficiency of quantum light sources. In this work, we proposed transverse quasi-phase-matched wavelength conversion devices with waveguide core materials of MgO:CLN and GaN. The waveguide core is formed by an adhesion-free surface activated bonding (SAB). A high thin film transfer yield was achieved with a high bonding strength of 4 MPa by optimizing the bonding conditions and reducing the surface roughness of the GaN film to be 0.5 nm in a 100 × 100 μm2 area using chemical mechanical polishing. The MgO:CLN/GaN waveguide structure was successfully fabricated by MgO:CLN thin film transfer, lift-off and dry etching processes. This MgO:CLN/GaN adhesion-free SAB technique is expected to be applied to various devices, such as optical devices and electronic devices, to enhance their functionality.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":" ","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49232816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-07DOI: 10.35848/1347-4065/acf7a0
Shogo Washida, Masayuki Imanishi, Ricksen Tandryo, Kazuma Hamada, K. Murakami, S. Usami, M. Maruyama, M. Yoshimura, Yusuke Mori
In recent years, we have achieved low threading dislocation density in GaN wafers by using the Na-flux multi-point seed technique. However, the resulting wafers exhibit regions of high dislocation density, exceeding 105 cm-2 at the coalescence boundary where pyramidal crystals merge. In this study, we discovered that annealing seed crystals at 900°C generated an uneven surface with approximately 50 µm of GaN decomposition, and growing GaN on the thus-generated uneven surfaces induced lateral growth composed of facets. We then investigated the effect of the uneven surface on dislocation reduction and found that the average threading dislocation density of the grown crystal was reduced from 9.7×105 cm-2 in the seed crystal to 1.2×105 cm-2. We confirmed that the reduction in threading dislocation density was due to the termination of dislocations by means of inclusions, and to mergers or annihilation as they encountered one another during facet growth.
{"title":"Reducing GaN crystal dislocations through lateral growth on uneven seed crystal surfaces using the Na-flux method","authors":"Shogo Washida, Masayuki Imanishi, Ricksen Tandryo, Kazuma Hamada, K. Murakami, S. Usami, M. Maruyama, M. Yoshimura, Yusuke Mori","doi":"10.35848/1347-4065/acf7a0","DOIUrl":"https://doi.org/10.35848/1347-4065/acf7a0","url":null,"abstract":"\u0000 In recent years, we have achieved low threading dislocation density in GaN wafers by using the Na-flux multi-point seed technique. However, the resulting wafers exhibit regions of high dislocation density, exceeding 105 cm-2 at the coalescence boundary where pyramidal crystals merge. In this study, we discovered that annealing seed crystals at 900°C generated an uneven surface with approximately 50 µm of GaN decomposition, and growing GaN on the thus-generated uneven surfaces induced lateral growth composed of facets. We then investigated the effect of the uneven surface on dislocation reduction and found that the average threading dislocation density of the grown crystal was reduced from 9.7×105 cm-2 in the seed crystal to 1.2×105 cm-2. We confirmed that the reduction in threading dislocation density was due to the termination of dislocations by means of inclusions, and to mergers or annihilation as they encountered one another during facet growth.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":" ","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46326059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-07DOI: 10.35848/1347-4065/acf79d
Masashi Iwaba, Koji Sekiguchi
Magnonic mode interconversion has paved the way for the integration of various developed magnonic functionalities, such as logic gates, switches, and multiplexers; however, it is limited by intrinsic magnetic damping. Therefore, this study proposes a potential amplification method to integrate spin-waves into magnonic circuits. The phase-matching conditions were tuned by introducing a feedback-ring structure. The results of microfocused Brillouin light scattering spectroscopy and micromagnetic simulations demonstrate the effectiveness of the spin-wave enhancement of feedback-ring structure. Consequently, spin-wave enhancement preserving phase information can be developed to realize integrated magnonic circuits.
{"title":"Spin-wave enhancement using feedback-ring structure","authors":"Masashi Iwaba, Koji Sekiguchi","doi":"10.35848/1347-4065/acf79d","DOIUrl":"https://doi.org/10.35848/1347-4065/acf79d","url":null,"abstract":"Magnonic mode interconversion has paved the way for the integration of various developed magnonic functionalities, such as logic gates, switches, and multiplexers; however, it is limited by intrinsic magnetic damping. Therefore, this study proposes a potential amplification method to integrate spin-waves into magnonic circuits. The phase-matching conditions were tuned by introducing a feedback-ring structure. The results of microfocused Brillouin light scattering spectroscopy and micromagnetic simulations demonstrate the effectiveness of the spin-wave enhancement of feedback-ring structure. Consequently, spin-wave enhancement preserving phase information can be developed to realize integrated magnonic circuits.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":" ","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43858063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have fabricated paper-based triboelectric nanogenerator (TENG) films that are composed of polydimethylsiloxane (PDMS) and copy paper. The Young’s modulus of the paper-based TENG film was approximately 807 MPa, which was 1500 times higher than that of the pure PDMS film with the same thickness. The output voltage of the TENG with the paper/PDMS film was comparable to that of the PDMS film. The maximum power density of the TENGs with the paper/PDMS film was 181 μW cm−2. Furthermore, we demonstrated luminescence of 54 LEDs using the TENG with the paper/PDMS film.
{"title":"Mechanical robust paper-based triboelectric nanogenerator films","authors":"Takashi Ikuno, Ryuto Takita, Rintarou Nagasawa, Kohei Hara, Qingyang Zhou","doi":"10.35848/1347-4065/acf79e","DOIUrl":"https://doi.org/10.35848/1347-4065/acf79e","url":null,"abstract":"We have fabricated paper-based triboelectric nanogenerator (TENG) films that are composed of polydimethylsiloxane (PDMS) and copy paper. The Young’s modulus of the paper-based TENG film was approximately 807 MPa, which was 1500 times higher than that of the pure PDMS film with the same thickness. The output voltage of the TENG with the paper/PDMS film was comparable to that of the PDMS film. The maximum power density of the TENGs with the paper/PDMS film was 181 μW cm−2. Furthermore, we demonstrated luminescence of 54 LEDs using the TENG with the paper/PDMS film.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":" ","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44178546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-06DOI: 10.35848/1347-4065/acf721
Takeshi Fukuma
The development of three-dimensional atomic force microscopy (3D-AFM) enabled the direct visualization of 3D hydration structures at solid-liquid interfaces with subnanometer resolution. Such imaging is possible because the hydration structure, once disorganized by the tip scan, can recover its original state through self-organization. Based on the same concept, the interior of any 3D self-organizing systems (3D-SOSs) may be visualized by 3D-AFM. To pursue this possibility, we have explored 3D-AFM imaging of various 3D-SOSs in interface sciences, life sciences and electrochemistry. Here, we review our recent progress in such 3D-AFM studies on 3D-SOSs, including hydration structures on cellulose nanocrystals, adsorption structures of anti-freezing surfactants on sapphire (0001) surfaces, intra-cellular components inside living cells, and charges accumulated inside an electric double layer. These examples demonstrate the effectiveness of 3D-AFM for understanding the nanoscale structures, properties and functions of various 3D-SOSs.
{"title":"Visualizing the inside of three-dimensional self-organizing systems by three-dimensional atomic force microscopy","authors":"Takeshi Fukuma","doi":"10.35848/1347-4065/acf721","DOIUrl":"https://doi.org/10.35848/1347-4065/acf721","url":null,"abstract":"The development of three-dimensional atomic force microscopy (3D-AFM) enabled the direct visualization of 3D hydration structures at solid-liquid interfaces with subnanometer resolution. Such imaging is possible because the hydration structure, once disorganized by the tip scan, can recover its original state through self-organization. Based on the same concept, the interior of any 3D self-organizing systems (3D-SOSs) may be visualized by 3D-AFM. To pursue this possibility, we have explored 3D-AFM imaging of various 3D-SOSs in interface sciences, life sciences and electrochemistry. Here, we review our recent progress in such 3D-AFM studies on 3D-SOSs, including hydration structures on cellulose nanocrystals, adsorption structures of anti-freezing surfactants on sapphire (0001) surfaces, intra-cellular components inside living cells, and charges accumulated inside an electric double layer. These examples demonstrate the effectiveness of 3D-AFM for understanding the nanoscale structures, properties and functions of various 3D-SOSs.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":" ","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45678550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-06DOI: 10.35848/1347-4065/acf74c
A. Kano, K. Hirohata, Mitsuaki Kato, C. Ota, Aoi Okada, J. Nishio, Yoji Shibutani
The reliability of 4H-SiC bipolar devices is compromised by the expansion of single Shockley stacking faults (SSFs) during forward-current operation. Because SSF expansion is governed by multiphysical aspects, including electrical, thermal, and stress states, analysis of the mounted structure is important for improving power module design. We propose a practical design method that analyzes the critical condition due to SSF expansion using a combined method with a multiphysical finite element method (FEM) and phase field model based on the time-dependent Ginzburg–Landau equation. In preliminary studies, the thermal deformation of the demonstration module and the variation of threshold current of a bar-shaped SSF were verified from experimental and reference data. Estimating the SSF expansion rate on the constructed response surface under the mutiphysical inputs from FEM, the proposed design method can be used effectively in the design process by changing the various design variables.
{"title":"Combined FEM and phase field method for reliability design of forward degradation in SiC bipolar device","authors":"A. Kano, K. Hirohata, Mitsuaki Kato, C. Ota, Aoi Okada, J. Nishio, Yoji Shibutani","doi":"10.35848/1347-4065/acf74c","DOIUrl":"https://doi.org/10.35848/1347-4065/acf74c","url":null,"abstract":"The reliability of 4H-SiC bipolar devices is compromised by the expansion of single Shockley stacking faults (SSFs) during forward-current operation. Because SSF expansion is governed by multiphysical aspects, including electrical, thermal, and stress states, analysis of the mounted structure is important for improving power module design. We propose a practical design method that analyzes the critical condition due to SSF expansion using a combined method with a multiphysical finite element method (FEM) and phase field model based on the time-dependent Ginzburg–Landau equation. In preliminary studies, the thermal deformation of the demonstration module and the variation of threshold current of a bar-shaped SSF were verified from experimental and reference data. Estimating the SSF expansion rate on the constructed response surface under the mutiphysical inputs from FEM, the proposed design method can be used effectively in the design process by changing the various design variables.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":" ","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45006668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-04DOI: 10.35848/1347-4065/acf69d
Tatsunari Saito, Yuta Imaizumi, K. Kobayashi, Yoshinobu Suehiro, N. Koide, T. Takeuchi, S. Kamiyama, M. Iwaya
Monolithic GaInN-based micro μLEDs arrays are expected to be applied to ultra-high-definition displays. In this study, stray light behavior of them fabricated on sapphire substrates was investigated. Results reveal that strong stray light appears considerably outside the μLED drive region, which is a major obstacle to the realization of high-definition displays. We also explored various techniques to effectively reduce the stray light. Use of flat sapphire substrates and removal of GaN material between μLEDs are effective in reducing stray light and are essential for achieving high definition in monolithic GaInN-based μLED array displays.
{"title":"Stray light reduction in monolithic GaInN-based μLED arrays for high-definition display realization","authors":"Tatsunari Saito, Yuta Imaizumi, K. Kobayashi, Yoshinobu Suehiro, N. Koide, T. Takeuchi, S. Kamiyama, M. Iwaya","doi":"10.35848/1347-4065/acf69d","DOIUrl":"https://doi.org/10.35848/1347-4065/acf69d","url":null,"abstract":"Monolithic GaInN-based micro μLEDs arrays are expected to be applied to ultra-high-definition displays. In this study, stray light behavior of them fabricated on sapphire substrates was investigated. Results reveal that strong stray light appears considerably outside the μLED drive region, which is a major obstacle to the realization of high-definition displays. We also explored various techniques to effectively reduce the stray light. Use of flat sapphire substrates and removal of GaN material between μLEDs are effective in reducing stray light and are essential for achieving high definition in monolithic GaInN-based μLED array displays.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":" ","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46330264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-04DOI: 10.35848/1347-4065/acf69e
Qingmin Liu, S. Hou, Jie Dong, J. Lei, Gang Wu, Zuyong Yan
In order to solve the problems of oxidation of the metal film coated on the outer surface of the photonic crystal fiber and the low sensitivity of the sensor, a side polishing temperature sensor based on surface plasmon resonance is proposed. First, the sensor is modelled with a metal coating on the side of the optical fiber of the sensor, using a temperature sensitive liquid as the temperature sensing substance. Then, simulations were carried out to calculate the structural parameters of the optical fiber and the effect of the metal material on the resonant wavelength of the loss spectrum. By comparing the sensitive sensing of different metal films, gold was chosen as the surface plasma sensing material. Finally, the sensing characteristics of the sensor are simulated using the finite element method. The results show that when gold is used as the surface plasmon material, the wavelength range is 675–1117 nm, and the high sensitivity sensing in the temperature range of 0 °C–60 °C can be realized. When the temperature is 0 °C, the maximum spectral sensitivity is 24.6 nm °C−1. The designed sensors have excellent performance and can be widely used for temperature sensing.
{"title":"D-shaped microstructure fiber temperature sensor based on surface plasmon resonance","authors":"Qingmin Liu, S. Hou, Jie Dong, J. Lei, Gang Wu, Zuyong Yan","doi":"10.35848/1347-4065/acf69e","DOIUrl":"https://doi.org/10.35848/1347-4065/acf69e","url":null,"abstract":"In order to solve the problems of oxidation of the metal film coated on the outer surface of the photonic crystal fiber and the low sensitivity of the sensor, a side polishing temperature sensor based on surface plasmon resonance is proposed. First, the sensor is modelled with a metal coating on the side of the optical fiber of the sensor, using a temperature sensitive liquid as the temperature sensing substance. Then, simulations were carried out to calculate the structural parameters of the optical fiber and the effect of the metal material on the resonant wavelength of the loss spectrum. By comparing the sensitive sensing of different metal films, gold was chosen as the surface plasma sensing material. Finally, the sensing characteristics of the sensor are simulated using the finite element method. The results show that when gold is used as the surface plasmon material, the wavelength range is 675–1117 nm, and the high sensitivity sensing in the temperature range of 0 °C–60 °C can be realized. When the temperature is 0 °C, the maximum spectral sensitivity is 24.6 nm °C−1. The designed sensors have excellent performance and can be widely used for temperature sensing.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":" ","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47321252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-01DOI: 10.35848/1347-4065/acf5f8
S. Trolier-McKinstry, Wanlin Zhu, Betul Akkopru‐Akgun, Fan He, S. Ko, C. Fragkiadakis, Peter Mardilovich
Thin films based on PbZr1−x Ti x O3 and K1−x Na x NbO3 are increasingly being commercialized in piezoelectric MEMS due to the comparatively low drive voltages required relative to bulk actuators, as well as the facile approach to making sensor or actuator arrays. As these materials are incorporated into devices, it is critically important that they operate reliably over the lifetime of the system. This paper discusses some of the factors controlling the electrical and electromechanical reliability of lead zirconate titanate (PZT)-based piezoMEMS films. In particular, it will be shown the gradients in the Zr/Ti ratio through the depth of the films are useful in increasing the lifetime of the films under DC electrical stresses.
基于PbZr1−x Ti x O3和K1−x Na x NbO3的薄膜在压电MEMS中越来越商业化，这是由于相对于体致动器所需的相对较低的驱动电压，以及制造传感器或致动器阵列的简单方法。由于这些材料被结合到设备中，因此它们在系统的整个寿命内可靠运行至关重要。本文讨论了控制锆钛酸铅（PZT）基压电MEMS薄膜电气和机电可靠性的一些因素。特别地，将显示出Zr/Ti比率通过膜的深度的梯度有助于在DC电应力下增加膜的寿命。
{"title":"Reliability of piezoelectric films for MEMS","authors":"S. Trolier-McKinstry, Wanlin Zhu, Betul Akkopru‐Akgun, Fan He, S. Ko, C. Fragkiadakis, Peter Mardilovich","doi":"10.35848/1347-4065/acf5f8","DOIUrl":"https://doi.org/10.35848/1347-4065/acf5f8","url":null,"abstract":"Thin films based on PbZr1−x Ti x O3 and K1−x Na x NbO3 are increasingly being commercialized in piezoelectric MEMS due to the comparatively low drive voltages required relative to bulk actuators, as well as the facile approach to making sensor or actuator arrays. As these materials are incorporated into devices, it is critically important that they operate reliably over the lifetime of the system. This paper discusses some of the factors controlling the electrical and electromechanical reliability of lead zirconate titanate (PZT)-based piezoMEMS films. In particular, it will be shown the gradients in the Zr/Ti ratio through the depth of the films are useful in increasing the lifetime of the films under DC electrical stresses.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":" ","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42956607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-31DOI: 10.35848/1347-4065/acf585
A. Banno, Kimihisa Matsumoto, K. Kamiya, S. Ito
In this study, Si nanoparticles were prepared by the Mg reduction of SiO2 extracted from bamboo leaves, and their optical properties were investigated. Si nanoparticles were filtered under reduced pressure to separate the residue and filtrate specimens. Although room-temperature photoluminescence (PL) was observed for both Si nanoparticle specimens, the PL intensity of the filtrate specimens was approximately seven times higher than that of the residue specimens. An electroluminescence (EL) device was fabricated using the Si nanoparticles of the filtrate as the active layer, and its EL properties were evaluated. With an applied voltage of 15 V, red luminescence was observed in the active layer. The Si nanoparticles from the bamboo leaves had relatively broad EL spectra with a peak wavelength approximately 700 nm, similar to that of the PL spectra. These results indicated that Si nanoparticles from bamboo leaves can be recycled for light-emitting devices.
{"title":"Preparation of Si nanoparticles from bamboo leaves and measurement of their photoluminescence and electroluminescence spectra","authors":"A. Banno, Kimihisa Matsumoto, K. Kamiya, S. Ito","doi":"10.35848/1347-4065/acf585","DOIUrl":"https://doi.org/10.35848/1347-4065/acf585","url":null,"abstract":"\u0000 In this study, Si nanoparticles were prepared by the Mg reduction of SiO2 extracted from bamboo leaves, and their optical properties were investigated. Si nanoparticles were filtered under reduced pressure to separate the residue and filtrate specimens. Although room-temperature photoluminescence (PL) was observed for both Si nanoparticle specimens, the PL intensity of the filtrate specimens was approximately seven times higher than that of the residue specimens. An electroluminescence (EL) device was fabricated using the Si nanoparticles of the filtrate as the active layer, and its EL properties were evaluated. With an applied voltage of 15 V, red luminescence was observed in the active layer. The Si nanoparticles from the bamboo leaves had relatively broad EL spectra with a peak wavelength approximately 700 nm, similar to that of the PL spectra. These results indicated that Si nanoparticles from bamboo leaves can be recycled for light-emitting devices.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42974516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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