{"title":"Wannier-Stark localization of electronic states in 4H-SiC MOS inversion layer","authors":"S. Nagamizo, Hajime Tanaka, Nobuya Mori","doi":"10.35848/1347-4065/ad189a","DOIUrl":null,"url":null,"abstract":"The electronic states in 4H-SiC MOS inversion layers are theoretically analyzed using the empirical pseudopotential method (EPM). The analysis shows that the Wannier-Stark localization occurs, which is absent in an effective mass approximation (EMA). The Wannier-Stark localization modifies the electronic states in the MOS inversion layers. A model is proposed to describe the in-plane dispersion of subbands affected by the Wannier-Stark localization. The differences between the EPM and EMA results for the subband energy levels and the in-plane effective masses are discussed.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"2 3","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2023-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad189a","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
The electronic states in 4H-SiC MOS inversion layers are theoretically analyzed using the empirical pseudopotential method (EPM). The analysis shows that the Wannier-Stark localization occurs, which is absent in an effective mass approximation (EMA). The Wannier-Stark localization modifies the electronic states in the MOS inversion layers. A model is proposed to describe the in-plane dispersion of subbands affected by the Wannier-Stark localization. The differences between the EPM and EMA results for the subband energy levels and the in-plane effective masses are discussed.
利用经验假势法（EPM）对 4H-SiC MOS 反转层中的电子态进行了理论分析。分析结果表明，出现了有效质量近似（EMA）中不存在的万尼尔-斯塔克局域化。万尼尔-斯塔克局域化改变了 MOS 反转层中的电子状态。我们提出了一个模型来描述受 Wannier-Stark 局域化影响的子带的面内色散。讨论了子带能级和面内有效质量的 EPM 和 EMA 结果之间的差异。
期刊介绍：
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:
• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
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