{"title":"New Crystal Photodiode Combination for Environmental Radiation Measurement","authors":"I. Tapan, Fatma Kocak","doi":"10.61326/jaasci.v2i2.103","DOIUrl":null,"url":null,"abstract":"Here, a new design will be introduced to detect radiation in the environment with high efficiency. The designed structure consists of placing ZnS–Si APD and PIN photodiodes at the ends of conventional crystals such as NaI(Tl) and CsI(Tl). Since ZnS is transparent to photons with wavelengths between 340 and 10000 nm, photons coming from the crystals are absorbed directly in the depletion region and generate primary particles. With an increase in the number of generated primary particles, a stronger and cleaner signal is obtained. In the simulation work, the light generated by 30 keV–3 MeV gamma rays in the crystals was obtained using the Geant4 simulation code. The single-particle Monte Carlo technique was used to calculate the photodiode output signal for the crystal emission spectrum. The simulation results showed that the crystals and ZnS–Si photodiode structures formed a good combination. The high quantum efficiency and low excess noise factor make the ZnS–Si structure an excellent choice for scintillating light detection.","PeriodicalId":507374,"journal":{"name":"Journal of Advanced Applied Sciences","volume":"43 ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Advanced Applied Sciences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.61326/jaasci.v2i2.103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Here, a new design will be introduced to detect radiation in the environment with high efficiency. The designed structure consists of placing ZnS–Si APD and PIN photodiodes at the ends of conventional crystals such as NaI(Tl) and CsI(Tl). Since ZnS is transparent to photons with wavelengths between 340 and 10000 nm, photons coming from the crystals are absorbed directly in the depletion region and generate primary particles. With an increase in the number of generated primary particles, a stronger and cleaner signal is obtained. In the simulation work, the light generated by 30 keV–3 MeV gamma rays in the crystals was obtained using the Geant4 simulation code. The single-particle Monte Carlo technique was used to calculate the photodiode output signal for the crystal emission spectrum. The simulation results showed that the crystals and ZnS–Si photodiode structures formed a good combination. The high quantum efficiency and low excess noise factor make the ZnS–Si structure an excellent choice for scintillating light detection.