New Crystal Photodiode Combination for Environmental Radiation Measurement

I. Tapan, Fatma Kocak
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Abstract

Here, a new design will be introduced to detect radiation in the environment with high efficiency. The designed structure consists of placing ZnS–Si APD and PIN photodiodes at the ends of conventional crystals such as NaI(Tl) and CsI(Tl). Since ZnS is transparent to photons with wavelengths between 340 and 10000 nm, photons coming from the crystals are absorbed directly in the depletion region and generate primary particles. With an increase in the number of generated primary particles, a stronger and cleaner signal is obtained. In the simulation work, the light generated by 30 keV–3 MeV gamma rays in the crystals was obtained using the Geant4 simulation code. The single-particle Monte Carlo technique was used to calculate the photodiode output signal for the crystal emission spectrum. The simulation results showed that the crystals and ZnS–Si photodiode structures formed a good combination. The high quantum efficiency and low excess noise factor make the ZnS–Si structure an excellent choice for scintillating light detection.
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用于环境辐射测量的新型晶体光电二极管组合
这里将介绍一种新的设计,用于高效探测环境中的辐射。所设计的结构包括在 NaI(Tl)和 CsI(Tl)等传统晶体的两端放置 ZnS-Si APD 和 PIN 光电二极管。由于 ZnS 对波长介于 340 纳米和 10000 纳米之间的光子是透明的,因此来自晶体的光子会被耗尽区直接吸收并产生原生粒子。随着产生的原生粒子数量的增加,会获得更强、更纯净的信号。在模拟工作中,使用 Geant4 模拟代码获得了 30 keV-3 MeV 伽马射线在晶体中产生的光。利用单粒子蒙特卡洛技术计算了晶体发射光谱的光电二极管输出信号。模拟结果表明,晶体和 ZnSi-Si 光电二极管结构形成了良好的组合。高量子效率和低过量噪声系数使 ZnS-Si 结构成为闪烁光探测的最佳选择。
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