{"title":"Realizing ferromagnetic semiconductors in SrRu1-xZrxO3 alloys","authors":"Sheng Xu, Y. Gu, Jun Bian, Xiaoshan Wu","doi":"10.1051/epjap/2023230120","DOIUrl":null,"url":null,"abstract":"Using first principle calculations, we study the structural, electric and magnetic properties of SrRu1-xZrxO3 (0 ≤ x ≤ 1). The spin-polarization calculations present that SrRu1-xZrxO3 is a ferromagnetic metal at x = 0, a ferromagnetic semiconductor at x = 0.125, 0.25, an antiferromagnetic semiconductor at x = 0.5 and a nonmagnetic insulator at x = 1, which is in agreement with available experiments. As increasing Zr contents, the lattice parameters and band gaps of SrRu1-xZrxO3 increase while the energy difference between antiferromagnetic and ferromagnetic states decreases. Through Ru-O and Zr-O bonds, hybridization between Ru 4d and Zr 4d states near the Fermi level becomes strong. As a result, Ru 4d states split and then metal-insulator transition occurs at x = 0.125 due to Zr doping. Ferromagnetic semiconductors are first predicted in Zr-doped SrRuO3, which may have potential applications in spintronic devices.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"8 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The European Physical Journal Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/epjap/2023230120","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Using first principle calculations, we study the structural, electric and magnetic properties of SrRu1-xZrxO3 (0 ≤ x ≤ 1). The spin-polarization calculations present that SrRu1-xZrxO3 is a ferromagnetic metal at x = 0, a ferromagnetic semiconductor at x = 0.125, 0.25, an antiferromagnetic semiconductor at x = 0.5 and a nonmagnetic insulator at x = 1, which is in agreement with available experiments. As increasing Zr contents, the lattice parameters and band gaps of SrRu1-xZrxO3 increase while the energy difference between antiferromagnetic and ferromagnetic states decreases. Through Ru-O and Zr-O bonds, hybridization between Ru 4d and Zr 4d states near the Fermi level becomes strong. As a result, Ru 4d states split and then metal-insulator transition occurs at x = 0.125 due to Zr doping. Ferromagnetic semiconductors are first predicted in Zr-doped SrRuO3, which may have potential applications in spintronic devices.