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Synthesis and characterization of Co3O4/Ti3C2 MXene nanocomposite: Efficient catalyst for Oxygen Evolution Reaction Application Co3O4/Ti3C2 MXene 纳米复合材料的合成与表征:氧进化反应应用的高效催化剂
Pub Date : 2024-08-12 DOI: 10.1051/epjap/2024240077
P. Kamakshi, C. Joshitha, Santhosh Chella, Ganesh Kumar K
In this investigation, cube-shaped Co3O4 nanoparticles and Co3O4/Ti3C2 MXene nanocomposite were successfully prepared through the solvothermal method. XRD analysis substantiated the cubic structure formation in Co3O4. Morphological and compositional analyses were conducted using FESEM and EDS analysis. The chemical states and surface properties of the materials were explored through XPS analysis. The characterized pristine and composite electro-catalysts were evaluated for oxygen evolution reaction. Co3O4/Ti3C2 MXene nanocomposite catalyst showed reduced over potential of 454 mV. The parameters of Co3O4/Ti3C2 MXene nanocomposite significantly enhanced the kinetics of oxygen evolution reaction than the bare Co3O4 nanoparticles.
本研究采用溶热法成功制备了立方体 Co3O4 纳米粒子和 Co3O4/Ti3C2 MXene 纳米复合材料。XRD 分析证实了 Co3O4 中立方结构的形成。利用 FESEM 和 EDS 分析进行了形态和成分分析。通过 XPS 分析探究了材料的化学状态和表面特性。对原始和复合电催化剂进行了氧进化反应评估。Co3O4/Ti3C2 MXene 纳米复合催化剂的过电势降低到 454 mV。与裸 Co3O4 纳米粒子相比,Co3O4/Ti3C2 MXene 纳米复合材料的参数显著提高了氧进化反应的动力学性能。
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引用次数: 0
Synthesis and characterization of Co3O4/Ti3C2 MXene nanocomposite: Efficient catalyst for Oxygen Evolution Reaction Application Co3O4/Ti3C2 MXene 纳米复合材料的合成与表征:氧进化反应应用的高效催化剂
Pub Date : 2024-08-12 DOI: 10.1051/epjap/2024240077
P. Kamakshi, C. Joshitha, Santhosh Chella, Ganesh Kumar K
In this investigation, cube-shaped Co3O4 nanoparticles and Co3O4/Ti3C2 MXene nanocomposite were successfully prepared through the solvothermal method. XRD analysis substantiated the cubic structure formation in Co3O4. Morphological and compositional analyses were conducted using FESEM and EDS analysis. The chemical states and surface properties of the materials were explored through XPS analysis. The characterized pristine and composite electro-catalysts were evaluated for oxygen evolution reaction. Co3O4/Ti3C2 MXene nanocomposite catalyst showed reduced over potential of 454 mV. The parameters of Co3O4/Ti3C2 MXene nanocomposite significantly enhanced the kinetics of oxygen evolution reaction than the bare Co3O4 nanoparticles.
本研究采用溶热法成功制备了立方体 Co3O4 纳米粒子和 Co3O4/Ti3C2 MXene 纳米复合材料。XRD 分析证实了 Co3O4 中立方结构的形成。利用 FESEM 和 EDS 分析进行了形态和成分分析。通过 XPS 分析探究了材料的化学状态和表面特性。对原始和复合电催化剂进行了氧进化反应评估。Co3O4/Ti3C2 MXene 纳米复合催化剂的过电势降低到 454 mV。与裸 Co3O4 纳米粒子相比,Co3O4/Ti3C2 MXene 纳米复合材料的参数显著提高了氧进化反应的动力学性能。
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引用次数: 0
Characterisation of barium hexaferrite thin films in microwave frequency band 微波频段六铁钡薄膜的特性分析
Pub Date : 2024-07-25 DOI: 10.1051/epjap/2024240087
Didier Vincent
The characterization of barium hexaferrite thin-films at microwave frequencies is important for determining their electromagnetic properties by measuring the elements of the permeability tensor. Layers of 15 μm were deposited by RF sputtering on a coplanar line. By measuring the S parameters under magnetic field conditions, the μ and κ elements of the permeability tensor were extracted and their variations as a function of the applied field were highlighted. Possible applications to absorbent layers are being considered
微波频率下六价铁钡薄膜的表征对于通过测量磁导张量的元素来确定其电磁特性非常重要。在共面线上通过射频溅射沉积了 15 μm 的层。通过测量磁场条件下的 S 参数,提取了磁导率张量的 μ 和 κ 元素,并突出显示了它们随外加磁场的变化。正在考虑将其应用于吸收层的可能性
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引用次数: 0
Anatase TiO2 film with dominant (001) facets prepared by radio frequency atmospheric pressure plasma 利用射频常压等离子体制备具有优势 (001) 面的氧化钛薄膜
Pub Date : 2024-07-19 DOI: 10.1051/epjap/2024230239
Yu Zhang, Haozhe Wang, Jie Cui, Tao He, Yu Xu, Jing Zhang
Anatase TiO2 nanosheets film with dominant (001) facets (TF-1) has attracted widespread research interest owing to wide-ranging industrial applications and fundamental importance. In this work, we prepared TF-1 with well adhesion on quartz substate in a short time (20 min) by radio frequency (RF) pulse-modulated plasma with hydrofluoric acid (HF) as the morphology controlling agent (MCA). Many intercrossed nanosheets were observed on the surface of TF-1 through SEM images, which provides more exposed reactive (001) facets. The degree of truncation (B/A) and the percentage of exposed (001) facets (S001/S) were estimated by XRD patterns and Raman spectra, which have been increased due to the presence of HF. XPS results indicate that F atoms are only adsorbed on anatase surface rather than doped into TiO2 lattice. The functions of HF on the growth of anatase TiO2 nanosheets were studied by density functional theory (DFT), revealing the stabilization effects associated with chemisorbed fluorine (F) atoms over (001) surface, and thus stimulating its preferred growth.
由于具有广泛的工业应用和重要的基础研究价值,具有主要(001)面的无相二氧化钛纳米片薄膜(TF-1)引起了广泛的研究兴趣。在这项工作中,我们采用射频(RF)脉冲调制等离子体,以氢氟酸(HF)为形貌控制剂(MCA),在短时间(20 分钟)内制备了在石英基底上具有良好附着力的 TF-1。通过扫描电子显微镜图像,可以在 TF-1 表面观察到许多交叉的纳米片,这提供了更多暴露的活性(001)面。通过 XRD 图样和拉曼光谱估算了截断程度(B/A)和暴露(001)面的百分比(S001/S),由于 HF 的存在,这两项指标均有所提高。XPS 结果表明,F 原子只是吸附在锐钛矿表面,而不是掺杂到二氧化钛晶格中。密度泛函理论(DFT)研究了氟化氢对锐钛矿二氧化钛纳米片生长的作用,揭示了化学吸附氟(F)原子对(001)表面的稳定作用,从而促进其优先生长。
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引用次数: 0
Synthesis and structural, morphological, and chimico-optical properties of Sr2FeO4 Ruddlesden-Popper oxide Sr2FeO4 Ruddlesden-Popper 氧化物的合成及其结构、形态和拟态光学特性
Pub Date : 2024-07-03 DOI: 10.1051/epjap/2024240024
Samira Foudi, Khadoudj Guessoum, Sonia Ramdani, M. Hamici, Pierre Saint-Grégoire
The citrate sol-gel process was used to produce Sr2FeO4 strontium ferrite powder. The method involves metallic nitrates, citric acid and distilled water as a solvent, followed by calcination. The Ruddlesden-Popper structure of the resulting compound was identified by XRD analysis. The different molecular structures and vibration bands were studied by FTIR. The morphology of the powder was analysed using SEM. Samples appear of good crystalline quality and with interesting nanostructure. We studied optical properties and determined the band gap energy to lie about 2.8 eV, Sr2FeO4 can thus absorb photons having a wavelength less than 444 nm, approximately, making this compound potentially interesting for applications.
柠檬酸溶胶-凝胶法用于生产 Sr2FeO4 锶铁氧体粉末。该方法以金属硝酸盐、柠檬酸和蒸馏水为溶剂,然后进行煅烧。通过 XRD 分析确定了所得化合物的 Ruddlesden-Popper 结构。傅立叶变换红外光谱对不同的分子结构和振动带进行了研究。利用扫描电镜分析了粉末的形态。样品具有良好的结晶质量和有趣的纳米结构。我们对其光学特性进行了研究,确定其带隙能约为 2.8 eV,因此 Sr2FeO4 可吸收波长小于 444 nm 的光子,从而使这种化合物具有潜在的应用价值。
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引用次数: 0
Investigation of a sensitive, selective and cost-effective electrochemical meso-porous silicon based gas sensor for NO2 detection at room temperature 研究一种灵敏度高、选择性好、成本效益高的电化学介孔硅气体传感器,用于室温下检测二氧化氮
Pub Date : 2024-06-13 DOI: 10.1051/epjap/2024240081
Khaoula Azaiez, Hela Mhamdi, R. Benabderrahmane Zaghouani, T. Fiorido, Jean-Louis Lazzari, M. Bendahan, W. Dimassi
This work presents a nitrogen dioxide (NO2) gas sensor based on porous silicon with improved sensitivity, selectivity, and cost-efficiency. Porous silicon is being researched as an alternative material for gas sensors operating at room temperature (RT), making it suited for low-consumption applications. Meso-porous silicon (meso-PS) films were prepared on p+ type Si (100) using an electrochemical method for NO2 gas sensing. Morphology, structural and optical properties of meso-PS films were investigated using scanning electron microscope (SEM), X-ray diffractometer (XRD), and UV-Vis spectroscopy. The gas sensing response of meso-PS samples was performed at RT with top parallel Al electrodes in the range of 4 to 10 ppm of NO2 gas. The tested sensor showed high normalized response (Rair/Rgas =40 for 4 ppm to 100 for 10 ppm) thanks to its high surface/volume ratio, good repeatability and reversibility, fast response (40 s) and recovery times (18 s), and good selectivity for NO2 vs. NH3, O3 and CO. All these performances obtained at RT are encouraging for low-power devices.
这项研究提出了一种基于多孔硅的二氧化氮(NO2)气体传感器,它具有更高的灵敏度、选择性和成本效益。多孔硅正在被研究用作在室温(RT)下工作的气体传感器的替代材料,使其适用于低消耗应用。采用电化学方法在 p+ 型硅 (100) 上制备了用于二氧化氮气体传感的介孔硅(meso-PS)薄膜。 使用扫描电子显微镜(SEM)、X 射线衍射仪(XRD)和紫外可见光谱对介孔硅薄膜的形态、结构和光学特性进行了研究。在 4 至 10 ppm 的二氧化氮气体范围内,使用顶部平行的铝电极在 RT 条件下测试了介孔聚苯乙烯样品的气体传感响应。由于具有高表面/体积比、良好的可重复性和可逆性、快速响应(40 秒)和恢复时间(18 秒)以及对 NO2 与 NH3、O3 和 CO 的良好选择性,测试传感器显示出较高的归一化响应(Rair/Rgas =40(4 ppm)至 100(10 ppm))。所有这些在 RT 条件下获得的性能对于低功耗设备来说都是令人鼓舞的。
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引用次数: 0
Investigating the structural, electronic, and magnetic properties of Cd1-xVxTe: Insights from First-Principles calculations 研究 Cd1-xVxTe 的结构、电子和磁特性:第一性原理计算的启示
Pub Date : 2024-05-14 DOI: 10.1051/epjap/2024240015
Mohamed Baiboud, Abdelaziz Labrag, M. Bghour, Mohammed Khenfouch, Halima Charkaoui, Ahmed Abou El Hassan, Hassan El Ouaddi, Said Laasri
In our study, we aim to investigate the structural, electronic, and magnetic properties of CdVTe, a diluted magnetic semiconductor with a Cadmium telluride (CdTe) structure. To achieve this, we employ the full potential linear augmented plane wave method implemented in the CASTEP code, which allows us to accurately simulate the behavior of the system. To describe the electronic exchange and correlation effects, we adopt the generalized gradient approximation (GGA) within the density functional theory (DFT) framework. This choice of methodology ensures reliable and accurate calculations of the electronic and magnetic properties of Cd1-xVxTe. Our results reveal that the substitution of Vanadium (V) into the Cadmium (Cd) site of the CdTe lattice does not alter the zinc blende crystal structure, demonstrating the stability and structural integrity of the system. Furthermore, our calculations demonstrate that the introduction of Vanadium impurities leads to spin polarization within the material, resulting in the emergence of a magnetic moment. Notably, we find that a Vanadium concentration of approximately x≈0.12 exhibits the strongest magnetic properties, characterized by a significant magnetic moment. These findings provide valuable insights into the behavior and potential applications of CdVTe as a diluted magnetic semiconductor, shedding light on the interplay between structural, electronic, and magnetic properties in this material.
碲化镉(CdVTe)是一种具有碲化镉(CdTe)结构的稀释磁性半导体,在我们的研究中,我们旨在研究其结构、电子和磁特性。为此,我们采用了 CASTEP 代码中实现的全电势线性增强平面波方法,该方法允许我们精确模拟系统的行为。为了描述电子交换和相关效应,我们在密度泛函理论(DFT)框架内采用了广义梯度近似法(GGA)。这种方法的选择确保了对 Cd1-xVxTe 的电子和磁性能进行可靠而精确的计算。我们的结果表明,将钒(V)置换到 CdTe 晶格的镉(Cd)位点不会改变锌混合物的晶体结构,这证明了该体系的稳定性和结构完整性。此外,我们的计算表明,钒杂质的引入会导致材料内部的自旋极化,从而产生磁矩。值得注意的是,我们发现钒浓度约为 x≈0.12 时磁性最强,具有显著的磁矩。这些发现为 CdVTe 作为稀释磁性半导体的行为和潜在应用提供了宝贵的见解,揭示了这种材料的结构、电子和磁性能之间的相互作用。
{"title":"Investigating the structural, electronic, and magnetic properties of Cd1-xVxTe: Insights from First-Principles calculations","authors":"Mohamed Baiboud, Abdelaziz Labrag, M. Bghour, Mohammed Khenfouch, Halima Charkaoui, Ahmed Abou El Hassan, Hassan El Ouaddi, Said Laasri","doi":"10.1051/epjap/2024240015","DOIUrl":"https://doi.org/10.1051/epjap/2024240015","url":null,"abstract":"In our study, we aim to investigate the structural, electronic, and magnetic properties of CdVTe, a diluted magnetic semiconductor with a Cadmium telluride (CdTe) structure. To achieve this, we employ the full potential linear augmented plane wave method implemented in the CASTEP code, which allows us to accurately simulate the behavior of the system. To describe the electronic exchange and correlation effects, we adopt the generalized gradient approximation (GGA) within the density functional theory (DFT) framework. This choice of methodology ensures reliable and accurate calculations of the electronic and magnetic properties of Cd1-xVxTe. \u0000Our results reveal that the substitution of Vanadium (V) into the Cadmium (Cd) site of the CdTe lattice does not alter the zinc blende crystal structure, demonstrating the stability and structural integrity of the system. Furthermore, our calculations demonstrate that the introduction of Vanadium impurities leads to spin polarization within the material, resulting in the emergence of a magnetic moment. \u0000Notably, we find that a Vanadium concentration of approximately x≈0.12 exhibits the strongest magnetic properties, characterized by a significant magnetic moment. These findings provide valuable insights into the behavior and potential applications of CdVTe as a diluted magnetic semiconductor, shedding light on the interplay between structural, electronic, and magnetic properties in this material. \u0000","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"10 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140982015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of different terminations on the surface properties of rare earth sesquioxides: First-principle calculations 不同端接对稀土倍半氧化物表面特性的影响:第一原理计算
Pub Date : 2024-04-03 DOI: 10.1051/epjap/2024240010
Zhiwei Zheng, Jian Wang, Zhijun He
Rare earth sesquioxide (R2O3) have attracted significant attention because of their stable surface and operable optical properties. In this paper, we comprehensively analyze the surface and optical properties of five rare earth sesquioxides (R2O3, where R=Sc, Y, La, Sm, Dy) using the first-principles method. The obtained results are consistent with other theoretical and experimental values. It is observed that the R terminated surfaces of R2O3 exhibits the lowest work function while the mixed atom terminations have the lowest surface energy, indicating their potential as electron emission materials. Additionally, calculations of optical properties reveal that R2O3 exhibits high reflectivity and optical absorption in the far ultraviolet region. Notably, Y2O3 demonstrates a remarkable 95% reflectivity in the far ultraviolet region, highlighting the immense potential of R2O3 in designing and applying optical devices. The theoretical calculation data in this paper provide a theoretical basis for related experiments.
稀土倍半氧化物(R2O3)因其稳定的表面和可操作的光学特性而备受关注。本文采用第一性原理方法全面分析了五种稀土倍半氧化物(R2O3,其中 R=Sc、Y、La、Sm、Dy)的表面和光学特性。所得结果与其他理论和实验值一致。据观察,R2O3 的 R 端面具有最低的功函数,而混合原子端面具有最低的表面能,这表明它们具有作为电子发射材料的潜力。此外,对光学特性的计算显示,R2O3 在远紫外区具有很高的反射率和光学吸收率。值得注意的是,Y2O3 在远紫外区的反射率高达 95%,这凸显了 R2O3 在设计和应用光学器件方面的巨大潜力。本文的理论计算数据为相关实验提供了理论依据。
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引用次数: 0
Photosensing properties of zinc nitride thin-film transistors fabricated on recyclable plastic substrates 在可回收塑料基板上制造的氮化锌薄膜晶体管的光传感特性
Pub Date : 2024-02-08 DOI: 10.1051/epjap/2024230169
Miguel A. Dominguez, Jose Luis Pau, Andrés Redondo-Cubero
In this work, the characterization of zinc nitride (Zn3N2) Thin-film Transistors (TFTs) as phototransistors is presented. Polyethylene terephthalate is used as recyclable plastic substrate. A zinc oxide (ZnO) film is used as passivation layer. The Zn3N2 and ZnO films are deposited at room temperature using a magnetron sputtering. The sensitivity, responsivity and detectivity were extracted and analyzed. Interestingly, a relation between the maximum value of detectivity and the threshold voltage VT was found. Moreover, the electrical characteristics are analyzed after 100 days on air to evaluate the stability under ambient conditions. To the best of our knowledge, the characterization of Zn3N2 TFTs as phototransistors is presented for the first time.
本研究介绍了氮化锌(Zn3N2)薄膜晶体管(TFT)作为光电晶体管的特性。聚对苯二甲酸乙二醇酯被用作可回收塑料基板。氧化锌(ZnO)薄膜用作钝化层。Zn3N2 和 ZnO 薄膜在室温下通过磁控溅射沉积而成。对灵敏度、响应度和检测度进行了提取和分析。有趣的是,发现了检测率最大值与阈值电压 VT 之间的关系。此外,还分析了在空气中放置 100 天后的电气特性,以评估其在环境条件下的稳定性。据我们所知,这是首次对作为光电晶体管的 Zn3N2 TFT 进行表征。
{"title":"Photosensing properties of zinc nitride thin-film transistors fabricated on recyclable plastic substrates","authors":"Miguel A. Dominguez, Jose Luis Pau, Andrés Redondo-Cubero","doi":"10.1051/epjap/2024230169","DOIUrl":"https://doi.org/10.1051/epjap/2024230169","url":null,"abstract":"In this work, the characterization of zinc nitride (Zn3N2) Thin-film Transistors (TFTs) as phototransistors is presented. Polyethylene terephthalate is used as recyclable plastic substrate. A zinc oxide (ZnO) film is used as passivation layer. The Zn3N2 and ZnO films are deposited at room temperature using a magnetron sputtering. The sensitivity, responsivity and detectivity were extracted and analyzed. Interestingly, a relation between the maximum value of detectivity and the threshold voltage VT was found. Moreover, the electrical characteristics are analyzed after 100 days on air to evaluate the stability under ambient conditions. To the best of our knowledge, the characterization of Zn3N2 TFTs as phototransistors is presented for the first time.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":"76 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139851149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photosensing properties of zinc nitride thin-film transistors fabricated on recyclable plastic substrates 在可回收塑料基板上制造的氮化锌薄膜晶体管的光传感特性
Pub Date : 2024-02-08 DOI: 10.1051/epjap/2024230169
Miguel A. Dominguez, Jose Luis Pau, Andrés Redondo-Cubero
In this work, the characterization of zinc nitride (Zn3N2) Thin-film Transistors (TFTs) as phototransistors is presented. Polyethylene terephthalate is used as recyclable plastic substrate. A zinc oxide (ZnO) film is used as passivation layer. The Zn3N2 and ZnO films are deposited at room temperature using a magnetron sputtering. The sensitivity, responsivity and detectivity were extracted and analyzed. Interestingly, a relation between the maximum value of detectivity and the threshold voltage VT was found. Moreover, the electrical characteristics are analyzed after 100 days on air to evaluate the stability under ambient conditions. To the best of our knowledge, the characterization of Zn3N2 TFTs as phototransistors is presented for the first time.
本研究介绍了氮化锌(Zn3N2)薄膜晶体管(TFT)作为光电晶体管的特性。聚对苯二甲酸乙二醇酯被用作可回收塑料基板。氧化锌(ZnO)薄膜用作钝化层。Zn3N2 和 ZnO 薄膜在室温下通过磁控溅射沉积而成。对灵敏度、响应度和检测度进行了提取和分析。有趣的是,发现了检测率最大值与阈值电压 VT 之间的关系。此外,还分析了在空气中放置 100 天后的电气特性,以评估其在环境条件下的稳定性。据我们所知,这是首次对作为光电晶体管的 Zn3N2 TFT 进行表征。
{"title":"Photosensing properties of zinc nitride thin-film transistors fabricated on recyclable plastic substrates","authors":"Miguel A. Dominguez, Jose Luis Pau, Andrés Redondo-Cubero","doi":"10.1051/epjap/2024230169","DOIUrl":"https://doi.org/10.1051/epjap/2024230169","url":null,"abstract":"In this work, the characterization of zinc nitride (Zn3N2) Thin-film Transistors (TFTs) as phototransistors is presented. Polyethylene terephthalate is used as recyclable plastic substrate. A zinc oxide (ZnO) film is used as passivation layer. The Zn3N2 and ZnO films are deposited at room temperature using a magnetron sputtering. The sensitivity, responsivity and detectivity were extracted and analyzed. Interestingly, a relation between the maximum value of detectivity and the threshold voltage VT was found. Moreover, the electrical characteristics are analyzed after 100 days on air to evaluate the stability under ambient conditions. To the best of our knowledge, the characterization of Zn3N2 TFTs as phototransistors is presented for the first time.","PeriodicalId":301303,"journal":{"name":"The European Physical Journal Applied Physics","volume":" 23","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139791315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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The European Physical Journal Applied Physics
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