Siloxane-containing polyimide films with high heat resistance and low dielectric constant

IF 3.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IET Nanodielectrics Pub Date : 2023-11-23 DOI:10.1049/nde2.12064
Song Mo, Lei Zhai, Yi Liu, Gang Han, Yan Jia, Min-Hui He, Lin Fan
{"title":"Siloxane-containing polyimide films with high heat resistance and low dielectric constant","authors":"Song Mo,&nbsp;Lei Zhai,&nbsp;Yi Liu,&nbsp;Gang Han,&nbsp;Yan Jia,&nbsp;Min-Hui He,&nbsp;Lin Fan","doi":"10.1049/nde2.12064","DOIUrl":null,"url":null,"abstract":"<p>A series of siloxane-containing polyimide films (PIS) were prepared by copolymerising with rigid aromatic dianhydride, siloxane diamines and six different aromatic diamines. The effects of siloxane structures, fluorine and imide content, rigid or flexible segment on the heat resistance, moisture absorption, dielectric performance, mechanical and bonding properties were systematically studied. The results show that PIS films maintain good heat resistance with <i>T</i><sub><i>g</i></sub> between 292 and 420°C and 5% weight loss temperature higher than 500°C. The moisture absorption and dielectric constant can be significantly reduced due to the presence of siloxanes and fluorinated groups, with the absorption rate as low as 1.2% and dielectric constant of 2.85 at 1 MHz. When measured at 10 GHz, the dielectric constant ranges from 3.10 to 3.50, and dielectric loss varies from 0.0059 to 0.0098. The PIS-6 film has the best comprehensive performance due to the low imide content, introduction of trifluoromethyl and ether bonds. The peeling strength of bonding PIS-6 film with a copper foil can reach 9.2 N/cm. It is proven that siloxane-containing PIS films with high heat resistance, low dielectric and outstanding adhesion are achieved, which can be applied for flexible integrated circuit boards, high-frequency electronics and microelectronics fields.</p>","PeriodicalId":36855,"journal":{"name":"IET Nanodielectrics","volume":"7 1","pages":"33-45"},"PeriodicalIF":3.8000,"publicationDate":"2023-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/nde2.12064","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IET Nanodielectrics","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/nde2.12064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

A series of siloxane-containing polyimide films (PIS) were prepared by copolymerising with rigid aromatic dianhydride, siloxane diamines and six different aromatic diamines. The effects of siloxane structures, fluorine and imide content, rigid or flexible segment on the heat resistance, moisture absorption, dielectric performance, mechanical and bonding properties were systematically studied. The results show that PIS films maintain good heat resistance with Tg between 292 and 420°C and 5% weight loss temperature higher than 500°C. The moisture absorption and dielectric constant can be significantly reduced due to the presence of siloxanes and fluorinated groups, with the absorption rate as low as 1.2% and dielectric constant of 2.85 at 1 MHz. When measured at 10 GHz, the dielectric constant ranges from 3.10 to 3.50, and dielectric loss varies from 0.0059 to 0.0098. The PIS-6 film has the best comprehensive performance due to the low imide content, introduction of trifluoromethyl and ether bonds. The peeling strength of bonding PIS-6 film with a copper foil can reach 9.2 N/cm. It is proven that siloxane-containing PIS films with high heat resistance, low dielectric and outstanding adhesion are achieved, which can be applied for flexible integrated circuit boards, high-frequency electronics and microelectronics fields.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
具有高耐热性和低介电常数的含硅氧烷聚酰亚胺薄膜
通过与刚性芳香族二酐、硅氧烷二胺和六种不同的芳香族二胺共聚,制备了一系列含硅氧烷的聚酰亚胺薄膜(PIS)。系统研究了硅氧烷结构、氟和亚胺含量、刚性或柔性段对耐热性、吸湿性、介电性能、机械和粘接性能的影响。结果表明,PIS 薄膜能保持良好的耐热性,其 Tg 在 292 至 420°C 之间,5% 失重温度高于 500°C。由于硅氧烷和氟化基团的存在,吸湿率和介电常数可显著降低,吸湿率低至 1.2%,介电常数在 1 MHz 时为 2.85。在 10 千兆赫时,介电常数在 3.10 至 3.50 之间,介电损耗在 0.0059 至 0.0098 之间。由于亚胺含量低、引入了三氟甲基和醚键,PIS-6 薄膜的综合性能最好。PIS-6 薄膜与铜箔粘合的剥离强度可达 9.2 N/cm。实验证明,含硅氧烷的 PIS 薄膜具有高耐热性、低介电性和出色的附着力,可应用于柔性集成电路板、高频电子和微电子领域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
IET Nanodielectrics
IET Nanodielectrics Materials Science-Materials Chemistry
CiteScore
5.60
自引率
3.70%
发文量
7
审稿时长
21 weeks
期刊最新文献
A combined technique for power transformer fault diagnosis based on k-means clustering and support vector machine Improvement in non-linear electrical conductivity of silicone rubber by incorporating zinc oxide fillers and grafting small polar molecules Traditional fault diagnosis methods for mineral oil-immersed power transformer based on dissolved gas analysis: Past, present and future Enhanced thermal conductivity and self-healing property of PUDA/boron nitride micro-sheets composites with a small number of graphene nano-platelets Improving the dielectric properties of polypropylene for metallised film capacitors based on cyclic olefin copolymer blending
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1