Siloxane-containing polyimide films with high heat resistance and low dielectric constant

IF 3.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IET Nanodielectrics Pub Date : 2023-11-23 DOI:10.1049/nde2.12064
Song Mo, Lei Zhai, Yi Liu, Gang Han, Yan Jia, Min-Hui He, Lin Fan
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Abstract

A series of siloxane-containing polyimide films (PIS) were prepared by copolymerising with rigid aromatic dianhydride, siloxane diamines and six different aromatic diamines. The effects of siloxane structures, fluorine and imide content, rigid or flexible segment on the heat resistance, moisture absorption, dielectric performance, mechanical and bonding properties were systematically studied. The results show that PIS films maintain good heat resistance with Tg between 292 and 420°C and 5% weight loss temperature higher than 500°C. The moisture absorption and dielectric constant can be significantly reduced due to the presence of siloxanes and fluorinated groups, with the absorption rate as low as 1.2% and dielectric constant of 2.85 at 1 MHz. When measured at 10 GHz, the dielectric constant ranges from 3.10 to 3.50, and dielectric loss varies from 0.0059 to 0.0098. The PIS-6 film has the best comprehensive performance due to the low imide content, introduction of trifluoromethyl and ether bonds. The peeling strength of bonding PIS-6 film with a copper foil can reach 9.2 N/cm. It is proven that siloxane-containing PIS films with high heat resistance, low dielectric and outstanding adhesion are achieved, which can be applied for flexible integrated circuit boards, high-frequency electronics and microelectronics fields.

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具有高耐热性和低介电常数的含硅氧烷聚酰亚胺薄膜
通过与刚性芳香族二酐、硅氧烷二胺和六种不同的芳香族二胺共聚,制备了一系列含硅氧烷的聚酰亚胺薄膜(PIS)。系统研究了硅氧烷结构、氟和亚胺含量、刚性或柔性段对耐热性、吸湿性、介电性能、机械和粘接性能的影响。结果表明,PIS 薄膜能保持良好的耐热性,其 Tg 在 292 至 420°C 之间,5% 失重温度高于 500°C。由于硅氧烷和氟化基团的存在,吸湿率和介电常数可显著降低,吸湿率低至 1.2%,介电常数在 1 MHz 时为 2.85。在 10 千兆赫时,介电常数在 3.10 至 3.50 之间,介电损耗在 0.0059 至 0.0098 之间。由于亚胺含量低、引入了三氟甲基和醚键,PIS-6 薄膜的综合性能最好。PIS-6 薄膜与铜箔粘合的剥离强度可达 9.2 N/cm。实验证明,含硅氧烷的 PIS 薄膜具有高耐热性、低介电性和出色的附着力,可应用于柔性集成电路板、高频电子和微电子领域。
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来源期刊
IET Nanodielectrics
IET Nanodielectrics Materials Science-Materials Chemistry
CiteScore
5.60
自引率
3.70%
发文量
7
审稿时长
21 weeks
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