K. Suganthi, S. Kayalvizhi, K. Ferents Koni Jiavana, S. Malarvizhi
{"title":"Current Re-Use Architecture and Pre-Distortion Technique Employing Re-Configurable Low Noise Amplifier for the Design of Nano-Electronic Sensors","authors":"K. Suganthi, S. Kayalvizhi, K. Ferents Koni Jiavana, S. Malarvizhi","doi":"10.1166/jno.2023.3491","DOIUrl":null,"url":null,"abstract":"This study presents the design of reconfigurable CMOS Low Noise Amplifier (LNA) topologies to achieve acceptable linearity, gain, and low noise for Nano-sensor applications. The frequency bands at 2.4 GHz, 5 GHz and 28 GHz are taken into consideration for employing the Pre-distortion and current reuse technique. Millimeter Wave (MMW) frequency bands include excellent impedance matching, good isolation between the ports, To improve the futuristic applications of RADAR sensors, low noise figures and significant gain are preferred. The designed re-configurable structure achieved At 2.4 GHz, the gain is modest with a low NF of 2.6 dB, less than 2 dB at 5 GHz, and more than 10 dB at 28 GHz frequencies. The Stability of the amplifier greater than 1 dB, The arrangement of the layout with a chip measuring 0.5×0.2 mm2 and a moderate power increase make it appropriate for nanosensor creation.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"30 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Nanoelectronics and Optoelectronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1166/jno.2023.3491","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This study presents the design of reconfigurable CMOS Low Noise Amplifier (LNA) topologies to achieve acceptable linearity, gain, and low noise for Nano-sensor applications. The frequency bands at 2.4 GHz, 5 GHz and 28 GHz are taken into consideration for employing the Pre-distortion and current reuse technique. Millimeter Wave (MMW) frequency bands include excellent impedance matching, good isolation between the ports, To improve the futuristic applications of RADAR sensors, low noise figures and significant gain are preferred. The designed re-configurable structure achieved At 2.4 GHz, the gain is modest with a low NF of 2.6 dB, less than 2 dB at 5 GHz, and more than 10 dB at 28 GHz frequencies. The Stability of the amplifier greater than 1 dB, The arrangement of the layout with a chip measuring 0.5×0.2 mm2 and a moderate power increase make it appropriate for nanosensor creation.