Design of Low Power Temperature Sensor Based on Full Resistance Frequency Domain Readout

IF 0.6 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-09-01 DOI:10.1166/jno.2023.3482
Zengjun Wang, Yu Xian
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Abstract

Combining with on-chip heat management application scenario, firstly, this paper introduces the advantages of resistance-based frequency-domain readout all-digital temperature sensor and its poor ability to resist power supply fluctuation, as well as the existing solutions, the basic principle of digital temperature sensor with anti-power fluctuation suppression is analyzed, and its feasibility is proved by system modeling and theoretical analysis. Secondly, based on the proposed architecture, a new kind of near-digital temperature sensor architecture is proposed, which adopts a ring oscillator dominated by leakage current, thus it can work directly in a wide voltage range from 0.8 V to 1.3 V without the need for a separate regulator. Finally, to further optimize the power consumption, a delay cell structure with lower power consumption and stronger robustness is proposed to further reduce the overall power consumption. The results show that the improved temperature sensor achieves lower power consumption and higher energy efficiency while keeping a small area, and it is advanced compared with other high level temperature sensors.
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基于全电阻频域读数的低功耗温度传感器设计
结合片上热管理应用场景,本文首先介绍了电阻式频域读出全数字温度传感器的优点及其抗电源波动能力差的问题,以及现有的解决方案,分析了具有抗电源波动抑制能力的数字温度传感器的基本原理,并通过系统建模和理论分析证明了其可行性。其次,基于所提出的架构,提出了一种新型的近数字温度传感器架构,该架构采用漏电流占主导地位的环形振荡器,因此可以直接工作在 0.8 V 至 1.3 V 的宽电压范围内,而无需单独的稳压器。最后,为了进一步优化功耗,还提出了一种功耗更低、鲁棒性更强的延迟单元结构,以进一步降低整体功耗。结果表明,改进后的温度传感器在保持较小面积的同时,实现了更低的功耗和更高的能效,与其他高电平温度传感器相比具有先进性。
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来源期刊
Journal of Nanoelectronics and Optoelectronics
Journal of Nanoelectronics and Optoelectronics 工程技术-工程:电子与电气
自引率
16.70%
发文量
48
审稿时长
12.5 months
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