ELECTRICAL CONDUCTIVITY OF HUMAN TOOTH ENAMEL AFTER EXPOSURE TO CHEMICAL OR PHYSICAL FACTORS WHEN FIXING ELEMENTS OF A MULTIBONDING

Yuri A. Ippolitov, Svetlana A. Mikhailova, Ivan Yu. Ippolitov, Elena O. Aleshina, Aleksey V. Gylov, Abbas A. Mahmoudi, Maher A. Solаiman, Viktoria P. Kuralesina
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Abstract

When using multibonding fixed orthodontic equipment, complications are possible mainly associated with the occurrence of tooth enamel caries, despite the presence of a large selection of means for the prevention of dental diseases. During the complex treatment of patients with dental deformities, 2 clinical groups were identified and the enamel surface was treated with 37% orthophosphoric acid and an erbium dental laser with a wavelength of 2940nm - (power 2 W, water 20%, air 75%, tip: BOOST with nozzle H 6/8, laser beam perpendicular to the enamel at a distance of 5 mm from its surface), before fixing the removable bracket element with orthodontic glue (A16.07.048). The conducted studies have shown that after laser preparation in the etching of enamel with acid, the surface acquires roughness, unevenness with the exposure of numerous micropores, in particular the mouths of enamel channels, which increases the electrical conductivity of enamel and electrometric indicators reach 1.3(0.9; 1.5) mkA from the initial 0.15(0.1;0.2)mkA, whereas after processing the enamel with high-intensity laser light, these values were 0.3 (0.1; 0.4) mkA from the initial 0.15 (0.1; 0.2)mkA, due to the mineral saturation of the interstitial spaces of enamel, the mouths of enamel channels sealed with an organo-mineral complex, which reduces the possibility of its subsurface microbial demineralization.
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在固定多粘结剂元件时,人的牙釉质在受到化学或物理因素影响后的导电性能
在使用多粘结固定正畸设备时,尽管有多种预防牙病的方法可供选择,但可能出现的并发症主要与牙釉质龋齿的发生有关。在对牙齿畸形患者进行综合治疗期间,确定了两组临床患者,在用正畸胶水(A16.07.048)固定可移动托槽元件之前,用 37% 的正磷酸和波长为 2940nm 的铒牙科激光(功率 2 W,水 20%,空气 75%,喷嘴:BOOST,喷嘴 H 6/8,激光束垂直于牙釉质,距离牙釉质表面 5 mm)对牙釉质表面进行了处理。 已进行的研究表明,在用酸蚀刻珐琅质的激光制备过程中,珐琅质表面会变得粗糙、不平整,暴露出许多微孔,特别是珐琅质通道口,这增加了珐琅质的导电性,电学指标从最初的 0.15(0.1;0.2) mkA 达到 1.3(0.9; 1.5) mkA。2)mkA,而用高强度激光处理釉质后,这些数值从最初的0.15(0.1;0.2)mkA下降到0.3(0.1;0.4)mkA,这是由于釉质间隙的矿物质饱和,釉质通道口被有机矿物质复合物封住,降低了其表层下微生物脱矿的可能性。
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