Multiple factors of regulation for transient negative capacitance in PbZr(1-x)Ti(x)O3 ferroelectric thin films

IF 1.9 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Semiconductor Science and Technology Pub Date : 2024-01-05 DOI:10.1088/1361-6641/ad1ba8
Hai-Ze Cao, Y. G. Xiao, Ning-Jie Ma, Li-Sha Yang, Yong Jiang, K. Xiong, Gang Li, Jun OuYang, Minghua Tang
{"title":"Multiple factors of regulation for transient negative capacitance in PbZr(1-x)Ti(x)O3 ferroelectric thin films","authors":"Hai-Ze Cao, Y. G. Xiao, Ning-Jie Ma, Li-Sha Yang, Yong Jiang, K. Xiong, Gang Li, Jun OuYang, Minghua Tang","doi":"10.1088/1361-6641/ad1ba8","DOIUrl":null,"url":null,"abstract":"\n The negative capacitance (NC) of ferroelectric materials can effectively break the “Boltzmann tyranny” and drive the continuation scaling of Moore’s law. In this work, to find a novel way of amplifying the transient NC, a series network of external resistors and PbZr(1-x)Ti(x)O3 (PZT) ferroelectric capacitors were constructed. Uniform modeling and simulation were performed using Kirchhoff’s current law, electrostatics equations, and Landau-Khalatnikov equations. The derived results revealed that the mismatch of switching rate between free charge and polarization during ferroelectric domain switching is responsible for the transient NC generation. Some interesting results were obtained for the regulation of the transient NC by various factors such as the strain between the ferroelectric film and substrate, the viscosity coefficient, the ratio of Ti components, the external resistance magnitude, and the operating temperature. This work provides considerable insight into the control of ferroelectric transient NC, and offers guidance for obtaining larger and longer transient NC in the widely used PZT thin films.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"19 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad1ba8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

The negative capacitance (NC) of ferroelectric materials can effectively break the “Boltzmann tyranny” and drive the continuation scaling of Moore’s law. In this work, to find a novel way of amplifying the transient NC, a series network of external resistors and PbZr(1-x)Ti(x)O3 (PZT) ferroelectric capacitors were constructed. Uniform modeling and simulation were performed using Kirchhoff’s current law, electrostatics equations, and Landau-Khalatnikov equations. The derived results revealed that the mismatch of switching rate between free charge and polarization during ferroelectric domain switching is responsible for the transient NC generation. Some interesting results were obtained for the regulation of the transient NC by various factors such as the strain between the ferroelectric film and substrate, the viscosity coefficient, the ratio of Ti components, the external resistance magnitude, and the operating temperature. This work provides considerable insight into the control of ferroelectric transient NC, and offers guidance for obtaining larger and longer transient NC in the widely used PZT thin films.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
PbZr(1-x)Ti(x)O3 铁电薄膜瞬态负电容的多种调节因素
铁电材料的负电容(NC)能有效打破 "玻尔兹曼暴政",推动摩尔定律的持续扩展。在这项研究中,为了找到放大瞬态负电容的新方法,我们构建了一个由外部电阻器和 PbZr(1-x)Ti(x)O3 (PZT) 铁电电容器组成的串联网络。利用基尔霍夫电流定律、静电方程和 Landau-Khalatnikov 方程进行了统一建模和仿真。推导结果表明,在铁电畴切换过程中,自由电荷和极化之间的切换速率不匹配是瞬态 NC 生成的原因。在铁电薄膜和基底之间的应变、粘度系数、Ti 分量比、外部电阻大小和工作温度等各种因素对瞬态 NC 的调节方面,获得了一些有趣的结果。这项研究为铁电瞬态 NC 的控制提供了相当深入的见解,并为在广泛使用的 PZT 薄膜中获得更大更长的瞬态 NC 提供了指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Semiconductor Science and Technology
Semiconductor Science and Technology 工程技术-材料科学:综合
CiteScore
4.30
自引率
5.30%
发文量
216
审稿时长
2.4 months
期刊介绍: Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.
期刊最新文献
Effect of atomic layer deposition process parameters on TiN electrode for Hf0.5Zr0.5O2 ferroelectric capacitor The ab initio study of n-type nitrogen and gallium co-doped diamond Self-powered Schottky barrier photodetector with high responsivity based on homoepitaxial Ga2O3 films by MOCVD Sub-bandgap excited photoluminescence probing of deep defect complexes in GaN doped by Si, Ge and C impurities The effect of temperature on the electrical characteristics of zigzag and armchair black phosphorus based 2D MOSFET
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1