Profiling Electronic and Phononic Band Structures of Semiconductors at Finite Temperatures: Methods and Applications

IF 3.5 2区 物理与天体物理 Q1 PHYSICS, MULTIDISCIPLINARY Chinese Physics Letters Pub Date : 2024-01-02 DOI:10.1088/0256-307x/41/2/026301
Xie Zhang, Jun Kang, Su-Huai Wei
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Abstract

Semiconductor devices are often operated at elevated temperatures that are well above zero Kelvin, which is the temperature in most first-principles density functional calculations. Computational approaches to computing and understanding the properties of semiconductors at finite temperatures are thus in critical demand. In this review, we discuss the recent progress in computationally assessing the electronic and phononic band structures of semiconductors at finite temperatures. As an emerging semiconductor with particularly strong temperature-induced renormalization of the electronic and phononic band structures, halide perovskites are used as a representative example to demonstrate how computational advances may help to understand the band structures at elevated temperatures. Finally, we briefly illustrate the remaining computational challenges and outlook promising research directions that may help to guide future research in this field.
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在有限温度下剖析半导体的电子和声带结构:方法与应用
半导体器件通常在远高于零开尔文的高温下运行,而零开尔文正是大多数第一原理密度泛函计算的温度。因此,在有限温度下计算和理解半导体特性的计算方法需求量很大。在这篇综述中,我们将讨论在计算评估有限温度下半导体的电子和声带结构方面的最新进展。作为一种新兴的半导体,卤化物过氧化物具有特别强的温度诱导的电子和声波能带结构重正化,我们以这种半导体为例,说明计算的进步如何有助于理解高温下的能带结构。最后,我们简要说明了剩余的计算挑战,并展望了可能有助于指导该领域未来研究的前景光明的研究方向。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Chinese Physics Letters
Chinese Physics Letters 物理-物理:综合
CiteScore
5.90
自引率
8.60%
发文量
13238
审稿时长
4 months
期刊介绍: Chinese Physics Letters provides rapid publication of short reports and important research in all fields of physics and is published by the Chinese Physical Society and hosted online by IOP Publishing.
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