John A. Carlson;Fu-Chen Hsiao;Andrey Mironov;P. Scott Carney;John M. Dallesasse
{"title":"Photo-Enhanced Room Temperature Magnetism and Two-Photon Effects in Manganese-Implanted Gallium Nitride p-i-n Structures","authors":"John A. Carlson;Fu-Chen Hsiao;Andrey Mironov;P. Scott Carney;John M. Dallesasse","doi":"10.1109/JQE.2023.3348112","DOIUrl":null,"url":null,"abstract":"The insertion of manganese into GaN-based p-i-n epitaxial structures allows for a ferromagnetic phase to occur at room temperature that can be photo-enhanced and retained for >8 hours. GaN p-i-n LED structures are implanted with manganese to form a ferromagnetic phase and illuminated with resonant photons across the GaN bandgap. The magnetization after illumination is found to increase by \n<inline-formula> <tex-math>$0.2~\\mu _{B}$ </tex-math></inline-formula>\n/Mn atom. Subsequent illumination below the GaN:Mn bandgap is found to remove the photo-enhancement of magnetism and fully demagnetize the material. The optically-driven process confirms that photon absorption drives hole-media induced ferromagnetic changes to the top layer in GaN:Mn structures. A modified p-i-n structure is designed that situates a two-dimensional hole gas (2DHG) beneath the magnetic layer for improvement of the hole injection effect. The mid-gap state formed by the implanted manganese in GaN:Mn is simulated for two-photon electromagnetic induced transparency that can control the absorption of the top layer and moderate the hole injection. The design of GaN:Mn p-i-n structures is explored for spin-photon mapping of states for long-term storage in memory systems.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2023-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10376059/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The insertion of manganese into GaN-based p-i-n epitaxial structures allows for a ferromagnetic phase to occur at room temperature that can be photo-enhanced and retained for >8 hours. GaN p-i-n LED structures are implanted with manganese to form a ferromagnetic phase and illuminated with resonant photons across the GaN bandgap. The magnetization after illumination is found to increase by
$0.2~\mu _{B}$
/Mn atom. Subsequent illumination below the GaN:Mn bandgap is found to remove the photo-enhancement of magnetism and fully demagnetize the material. The optically-driven process confirms that photon absorption drives hole-media induced ferromagnetic changes to the top layer in GaN:Mn structures. A modified p-i-n structure is designed that situates a two-dimensional hole gas (2DHG) beneath the magnetic layer for improvement of the hole injection effect. The mid-gap state formed by the implanted manganese in GaN:Mn is simulated for two-photon electromagnetic induced transparency that can control the absorption of the top layer and moderate the hole injection. The design of GaN:Mn p-i-n structures is explored for spin-photon mapping of states for long-term storage in memory systems.
期刊介绍:
The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.