Pub Date : 2026-03-03DOI: 10.1109/JQE.2026.3669932
Alexander C. MacGillivray;Mathew W. Bishop;Benjamin C. Maglio;Samuel Shutts;Peter M. Smowton;Jonathan F. Holzman
In this work, we introduce a retro-modulator surface as a monolithic passive transceiver for short- to medium-range optical wireless and free-space optical communication links. It incorporates a sublayer of microspheres for retroreflection and multi-quantum-well structure for modulation over the optical communication C-band (1530–1565 nm) when driven by digital voltages (0–5 V). Our theoretical analyses show that LaSFN9 and BaTiO3 microspheres, with refractive indices of 1.8 and 2.0, respectively, give optimal retroreflection for shorter and longer link lengths, respectively; our experimental analyses reveal that our AlGaInAs-based modulator imparts sufficiently deep modulation over the C-band. This lets our integrated retro-modulator surfaces with LaSFN9 or BaTiO3 microspheres function with fields-of-view of 10.8° or 9.4°, respectively, and modulation depths of 3.4% or 5.3%, respectively (giving extinction ratios of 0.93 or 0.89, respectively). Our characterizations of error performance through links with weak, moderate, and strong turbulence then show error vector magnitudes of 3.7%, 9.2%, and 24%, respectively, with bit error rates below $10^{-3}$ , below $10^{-3}$ , and equal to 0.0183, respectively. We conclude that retro-modulator surfaces can be effective elements in passive transceivers for short- to medium-range optical wireless or free-space optical communication links, through weak or moderate turbulence, while offering minimal size, weight, and power.
{"title":"Integration of Microspheres and Multi-Quantum-Well Modulators as Retro-Modulation Surfaces for Optical Wireless and Free-Space Optical Communication","authors":"Alexander C. MacGillivray;Mathew W. Bishop;Benjamin C. Maglio;Samuel Shutts;Peter M. Smowton;Jonathan F. Holzman","doi":"10.1109/JQE.2026.3669932","DOIUrl":"https://doi.org/10.1109/JQE.2026.3669932","url":null,"abstract":"In this work, we introduce a retro-modulator surface as a monolithic passive transceiver for short- to medium-range optical wireless and free-space optical communication links. It incorporates a sublayer of microspheres for retroreflection and multi-quantum-well structure for modulation over the optical communication C-band (1530–1565 nm) when driven by digital voltages (0–5 V). Our theoretical analyses show that LaSFN9 and BaTiO3 microspheres, with refractive indices of 1.8 and 2.0, respectively, give optimal retroreflection for shorter and longer link lengths, respectively; our experimental analyses reveal that our AlGaInAs-based modulator imparts sufficiently deep modulation over the C-band. This lets our integrated retro-modulator surfaces with LaSFN9 or BaTiO3 microspheres function with fields-of-view of 10.8° or 9.4°, respectively, and modulation depths of 3.4% or 5.3%, respectively (giving extinction ratios of 0.93 or 0.89, respectively). Our characterizations of error performance through links with weak, moderate, and strong turbulence then show error vector magnitudes of 3.7%, 9.2%, and 24%, respectively, with bit error rates below <inline-formula> <tex-math>$10^{-3}$ </tex-math></inline-formula>, below <inline-formula> <tex-math>$10^{-3}$ </tex-math></inline-formula>, and equal to 0.0183, respectively. We conclude that retro-modulator surfaces can be effective elements in passive transceivers for short- to medium-range optical wireless or free-space optical communication links, through weak or moderate turbulence, while offering minimal size, weight, and power.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 3","pages":"1-11"},"PeriodicalIF":2.1,"publicationDate":"2026-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147383094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-03DOI: 10.1109/JQE.2026.3665027
Guang S. He
In the above article [1], Fig. 5 was mistakenly placed. The correct one should be as follows:
在上述文章[1]中，图5放置错误。正确的格式如下：
{"title":"Errata to “Two- and Three-Photon Pumped Regular and Random Lasing Behaviors in a Scattering Dye Solution With Suspended Polystyrene Microspheres”","authors":"Guang S. He","doi":"10.1109/JQE.2026.3665027","DOIUrl":"https://doi.org/10.1109/JQE.2026.3665027","url":null,"abstract":"In the above article [1], Fig. 5 was mistakenly placed. The correct one should be as follows:","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 2","pages":"1-1"},"PeriodicalIF":2.1,"publicationDate":"2026-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11419675","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147362402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Orbital angular momentum (OAM), characterized by its unique spatial field distribution, has been extensively studied and applied in various fields. In many applications, an OAM beam with coverage over a specific frequency band is required, and supercontinuum (SC) generation presents a viable solution to provide a broadband OAM source. The launch of a short pulse into a specially designed fiber with flat dispersion across a broad wavelength range leads to broadband SC generation through nonlinear spectral broadening during propagation. In this study, we propose a dual concentric ring fiber design that achieves a flat and near-zero dispersion profile over a wavelength range extending up to 3435 nm, featuring four zero-dispersion wavelengths for the OAM mode. The zero-dispersion wavelengths can be precisely tuned by adjusting the structural parameters and the germanium doping concentration in the silica-based fiber. The spectral broadening performance, in terms of flatness and bandwidth, is evaluated under various input pulse and fiber conditions. Simulation results indicate that the OAM3,1 mode SC can span nearly three octaves at the -40 dB level when pumped with a 50-fs, 600-kW Gaussian pulse centered at 1500 nm. With further optimization of the fiber structure for different OAM modes, the generated SC extends beyond 2.82 octaves. Additionally, the effects of different shape factors on the SC characteristics are systematically compared.
{"title":"Broadband Supercontinuum Generation for Orbital Angular Momentum Modes in Graded-Index Double-Ring-Core Fiber","authors":"Qinru Peng;Wenpu Geng;Yiwen Zhang;Yongbo Dong;Zhongqi Pan;Yang Yue","doi":"10.1109/JQE.2026.3667098","DOIUrl":"https://doi.org/10.1109/JQE.2026.3667098","url":null,"abstract":"Orbital angular momentum (OAM), characterized by its unique spatial field distribution, has been extensively studied and applied in various fields. In many applications, an OAM beam with coverage over a specific frequency band is required, and supercontinuum (SC) generation presents a viable solution to provide a broadband OAM source. The launch of a short pulse into a specially designed fiber with flat dispersion across a broad wavelength range leads to broadband SC generation through nonlinear spectral broadening during propagation. In this study, we propose a dual concentric ring fiber design that achieves a flat and near-zero dispersion profile over a wavelength range extending up to 3435 nm, featuring four zero-dispersion wavelengths for the OAM mode. The zero-dispersion wavelengths can be precisely tuned by adjusting the structural parameters and the germanium doping concentration in the silica-based fiber. The spectral broadening performance, in terms of flatness and bandwidth, is evaluated under various input pulse and fiber conditions. Simulation results indicate that the OAM3,1 mode SC can span nearly three octaves at the -40 dB level when pumped with a 50-fs, 600-kW Gaussian pulse centered at 1500 nm. With further optimization of the fiber structure for different OAM modes, the generated SC extends beyond 2.82 octaves. Additionally, the effects of different shape factors on the SC characteristics are systematically compared.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 2","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2026-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147362487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, we find that shallow-level acceptor-type defects can make a relevant contribution to the catastrophic optical mirror damage (COMD) for gallium nitride (GaN)-based Fabry-Pérot (FP) laser diodes (LDs). These charged acceptor-type defects function as negatively charged centers that capture the injected holes and enhance nonradiative recombination at the cavity facets. This significantly enhances the self-heating effect and causes thermally induced facet degradation. To address this challenge, we propose introducing a high-k HfO2 buried field-plate termination. The high-k HfO2 buried field-plate enables the stronger electric field magnitude in the GaN region underneath the high-k HfO2 region, which generates the valence band barrier height and achieves hole confinement. With the developed physical models on the facet, we find that the proposed structure can suppress facet degradation by reducing surface recombination and decreasing the facet temperature. As a result, our design delays the onset of nonradiative-recombination-induced heat in the facet region and enhances the COMD threshold.
{"title":"Numerically Investigating the Impact of High-k Buried Field-Plate Termination on the Catastrophic Mirror Failure for GaN-Based Laser Diodes","authors":"Qiong Zhang;Kangkai Tian;Chunshuang Chu;Yonghui Zhang;Quan Zheng;Qing Li;Xiao Wei Sun;Zi-Hui Zhang","doi":"10.1109/JQE.2026.3665619","DOIUrl":"https://doi.org/10.1109/JQE.2026.3665619","url":null,"abstract":"In this work, we find that shallow-level acceptor-type defects can make a relevant contribution to the catastrophic optical mirror damage (COMD) for gallium nitride (GaN)-based Fabry-Pérot (FP) laser diodes (LDs). These charged acceptor-type defects function as negatively charged centers that capture the injected holes and enhance nonradiative recombination at the cavity facets. This significantly enhances the self-heating effect and causes thermally induced facet degradation. To address this challenge, we propose introducing a high-k HfO2 buried field-plate termination. The high-k HfO2 buried field-plate enables the stronger electric field magnitude in the GaN region underneath the high-k HfO2 region, which generates the valence band barrier height and achieves hole confinement. With the developed physical models on the facet, we find that the proposed structure can suppress facet degradation by reducing surface recombination and decreasing the facet temperature. As a result, our design delays the onset of nonradiative-recombination-induced heat in the facet region and enhances the COMD threshold.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 2","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147299632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-16DOI: 10.1109/JQE.2026.3665084
{"title":"2025 Index Journal of Quantum Electronics Vol. 61","authors":"","doi":"10.1109/JQE.2026.3665084","DOIUrl":"https://doi.org/10.1109/JQE.2026.3665084","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-23"},"PeriodicalIF":2.1,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11397237","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-10DOI: 10.1109/JQE.2026.3659781
{"title":"IEEE Journal of Quantum Electronics Information for Authors","authors":"","doi":"10.1109/JQE.2026.3659781","DOIUrl":"https://doi.org/10.1109/JQE.2026.3659781","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 1","pages":"C3-C3"},"PeriodicalIF":2.1,"publicationDate":"2026-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11390739","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146175973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A new carborane-containing metal-organic framework (Cb Ni-MOF) was synthesized using a high-power laser-assisted method. The material was prepared from Nickel(II) chloride hexahydrate (NiCI${}_{2}cdot 6$ H2O) and m-carborane-1,7-dicarboxylic acid (Cb). FTIR spectroscopy-based structural analysis confirmed successful coordination between the carborane carboxylate groups and Ni(II) ions. SEM-based morphological description revealed 200 nm to $1~mu $ m-sized polyhedral particles, indicating a crystalline and porous nature. TEM images further revealed nanoscale crystallinity with particle diameters around 50 nm, together with single-/polycrystalline structures with identical features. These findings demonstrate that the laser-assisted process is efficient for preparing nano-ordered, highly crystalline Cb-based MOFs. In this work, the generation of a high-performance ultrafast fiber laser system at the 2-$mu $ m wavelength region was demonstrated. The system utilized a passively mode-locked oscillator incorporating a Cb Ni-MOF deposited on an arc-shaped fiber, demonstrating exceptional nonlinear optical properties with 14.1% modulation depth and 11.2 MW/cm2 saturation intensity. The laser oscillator generated ultrashort pulses with a duration of 1.2 ps at a center wavelength of 1942.9 nm. Using a chirped pulse amplification (CPA) technique with pre-amplification and main amplification stages, the high-power fiber laser achieves remarkable performance characteristics: 8.4 W average output power, 264 fs pulse duration, 433 nJ pulse energy, and 1.64 MW peak power at 19.4 MHz repetition rate. This high-power ultrafast fiber laser system shows significant potential for applications in invasive medical procedures, advanced material processing, and other fields requiring precise and high-intensity laser-matter interactions.
{"title":"High-Energy Ultrafast Fiber Laser at 2-μm Based on Cb Ni-Metal Organic Framework","authors":"Harith Ahmad;Muhammad Khairol Annuar Zaini;Zulkifli Mahmoodin;Saliha Mutlu;Volkan Filiz;Sevil Savaskan Yilmaz;Nergis Arsu;Mohamad Akmal Mohamad Lutfi;Kavintheran Thambiratnam;Bülend Ortaç","doi":"10.1109/JQE.2026.3658614","DOIUrl":"https://doi.org/10.1109/JQE.2026.3658614","url":null,"abstract":"A new carborane-containing metal-organic framework (Cb Ni-MOF) was synthesized using a high-power laser-assisted method. The material was prepared from Nickel(II) chloride hexahydrate (NiCI<inline-formula> <tex-math>${}_{2}cdot 6$ </tex-math></inline-formula>H2O) and m-carborane-1,7-dicarboxylic acid (Cb). FTIR spectroscopy-based structural analysis confirmed successful coordination between the carborane carboxylate groups and Ni(II) ions. SEM-based morphological description revealed 200 nm to <inline-formula> <tex-math>$1~mu $ </tex-math></inline-formula>m-sized polyhedral particles, indicating a crystalline and porous nature. TEM images further revealed nanoscale crystallinity with particle diameters around 50 nm, together with single-/polycrystalline structures with identical features. These findings demonstrate that the laser-assisted process is efficient for preparing nano-ordered, highly crystalline Cb-based MOFs. In this work, the generation of a high-performance ultrafast fiber laser system at the 2-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m wavelength region was demonstrated. The system utilized a passively mode-locked oscillator incorporating a Cb Ni-MOF deposited on an arc-shaped fiber, demonstrating exceptional nonlinear optical properties with 14.1% modulation depth and 11.2 MW/cm2 saturation intensity. The laser oscillator generated ultrashort pulses with a duration of 1.2 ps at a center wavelength of 1942.9 nm. Using a chirped pulse amplification (CPA) technique with pre-amplification and main amplification stages, the high-power fiber laser achieves remarkable performance characteristics: 8.4 W average output power, 264 fs pulse duration, 433 nJ pulse energy, and 1.64 MW peak power at 19.4 MHz repetition rate. This high-power ultrafast fiber laser system shows significant potential for applications in invasive medical procedures, advanced material processing, and other fields requiring precise and high-intensity laser-matter interactions.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 2","pages":"1-9"},"PeriodicalIF":2.1,"publicationDate":"2026-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146175768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Perovskite optoelectronic devices require characterization under chopped light illumination to accurately evaluate their performance metrics, including external quantum efficiency (EQE), responsivity (R), and detectivity (D*). We demonstrate that these parameters exhibit strong dependence on the chopping frequency, necessitating frequency optimization for reliable device performance assessment and operation. Through systematic characterization across a broad frequency range, we observe a capacitive-like response in the perovskite layer, which governs the frequency-dependent behavior of EQE and R. We propose a mathematical model to fit this response, enabling predictive performance analysis and explain the underlying physics by examining the impedance data. This work provides critical insights into frequency-resolved characterization protocols for perovskite optoelectronic devices, offering a framework to standardize performance evaluation and guide its optimization in presence of device limitations.
{"title":"Optical Chopper Frequency Dependent Performance of Perovskite Optoelectronic Devices","authors":"Surya Ketaraju;Naba Kumar Rana;Santu Mazumder;Nikhil Chander","doi":"10.1109/JQE.2026.3659004","DOIUrl":"https://doi.org/10.1109/JQE.2026.3659004","url":null,"abstract":"Perovskite optoelectronic devices require characterization under chopped light illumination to accurately evaluate their performance metrics, including external quantum efficiency (EQE), responsivity (R), and detectivity (D*). We demonstrate that these parameters exhibit strong dependence on the chopping frequency, necessitating frequency optimization for reliable device performance assessment and operation. Through systematic characterization across a broad frequency range, we observe a capacitive-like response in the perovskite layer, which governs the frequency-dependent behavior of EQE and R. We propose a mathematical model to fit this response, enabling predictive performance analysis and explain the underlying physics by examining the impedance data. This work provides critical insights into frequency-resolved characterization protocols for perovskite optoelectronic devices, offering a framework to standardize performance evaluation and guide its optimization in presence of device limitations.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 2","pages":"1-7"},"PeriodicalIF":2.1,"publicationDate":"2026-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-28DOI: 10.1109/JQE.2026.3658257
H. Ahmad;J. W. Chiam;L. W. Lohano;M. Z. Samion;Z. Mahmoodin;Mousa Hussein
In this study, a wavelength-switchable dual-wavelength thulium-doped fiber laser (TDFL) and holmium-doped fiber laser (HDFL) were presented. Dual-wavelength generation was achieved by utilizing the multimode interference (MMI) effect in a single-mode-six-mode-single-mode fiber structure, fabricated by splicing both ends of a six-mode fiber (6MF) to single-mode fibers (SMF). The output bandwidth of the TDFL and HDFL was 1954.65 nm to 1993.03 nm and 2068.63 nm to 2093.05 nm, respectively. A polarization controller (PC) was carefully adjusted to tune the output laser’s wavelength. Both setups demonstrated good stability, with SNR ranging from 48 to 55 dB for the TDFL and 41 to 50 dB for the HDFL. The power fluctuation was less than 1 dB. The maximum output power and slope efficiency of the TDFL were 24.3 mW and 5.90%, respectively, whereas those of the HDFL were 10.54 mW and 3.32%, respectively. A minimum linewidth of 0.07 nm was achieved across all wavelength configurations.
{"title":"Wavelength-Switchable Dual-Wavelength Fiber Laser at 2 μm by Utilizing a Six-Mode Optical Fiber","authors":"H. Ahmad;J. W. Chiam;L. W. Lohano;M. Z. Samion;Z. Mahmoodin;Mousa Hussein","doi":"10.1109/JQE.2026.3658257","DOIUrl":"https://doi.org/10.1109/JQE.2026.3658257","url":null,"abstract":"In this study, a wavelength-switchable dual-wavelength thulium-doped fiber laser (TDFL) and holmium-doped fiber laser (HDFL) were presented. Dual-wavelength generation was achieved by utilizing the multimode interference (MMI) effect in a single-mode-six-mode-single-mode fiber structure, fabricated by splicing both ends of a six-mode fiber (6MF) to single-mode fibers (SMF). The output bandwidth of the TDFL and HDFL was 1954.65 nm to 1993.03 nm and 2068.63 nm to 2093.05 nm, respectively. A polarization controller (PC) was carefully adjusted to tune the output laser’s wavelength. Both setups demonstrated good stability, with SNR ranging from 48 to 55 dB for the TDFL and 41 to 50 dB for the HDFL. The power fluctuation was less than 1 dB. The maximum output power and slope efficiency of the TDFL were 24.3 mW and 5.90%, respectively, whereas those of the HDFL were 10.54 mW and 3.32%, respectively. A minimum linewidth of 0.07 nm was achieved across all wavelength configurations.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 2","pages":"1-7"},"PeriodicalIF":2.1,"publicationDate":"2026-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146175769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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