Pub Date : 2025-11-07DOI: 10.1109/JQE.2025.3630564
Soumi Pal;Arpit Khandelwal;Nitin Bhatia
The 2D buried heterostructure (BH) laser with a symmetric transverse refractive index profile can generate radial and azimuthal polarized vector vortex beam (VVB) by exploiting the orthogonally polarized higher order transverse modes in pairs. We investigate the optimal structure and operating conditions for the stable generation of dual polarized modes under practical operating conditions, including gain saturation, spontaneous emission, carrier diffusion, and polarization sensitivity. As the corresponding BH laser supports higher order transverse modes, the dimensions of the active layers become larger than the diffusion length of the semiconductor. Thus, for the first time, we introduce the 2D diffusion model into the laser rate equation for higher order transverse modes. We show that the dynamic nature of the laser, due to nonlinear gain saturation and mode polarization, is suppressed by diffusion, resulting in more stable output under various operating conditions.
{"title":"Vector Vortex Beam Emission Using Higher Order Transverse Modes in a Buried Heterostructure Laser","authors":"Soumi Pal;Arpit Khandelwal;Nitin Bhatia","doi":"10.1109/JQE.2025.3630564","DOIUrl":"https://doi.org/10.1109/JQE.2025.3630564","url":null,"abstract":"The 2D buried heterostructure (BH) laser with a symmetric transverse refractive index profile can generate radial and azimuthal polarized vector vortex beam (VVB) by exploiting the orthogonally polarized higher order transverse modes in pairs. We investigate the optimal structure and operating conditions for the stable generation of dual polarized modes under practical operating conditions, including gain saturation, spontaneous emission, carrier diffusion, and polarization sensitivity. As the corresponding BH laser supports higher order transverse modes, the dimensions of the active layers become larger than the diffusion length of the semiconductor. Thus, for the first time, we introduce the 2D diffusion model into the laser rate equation for higher order transverse modes. We show that the dynamic nature of the laser, due to nonlinear gain saturation and mode polarization, is suppressed by diffusion, resulting in more stable output under various operating conditions.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-11"},"PeriodicalIF":2.1,"publicationDate":"2025-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145560775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-04DOI: 10.1109/JQE.2025.3609153
Alan E. Willner
{"title":"Guest Editorial JQE 60th Anniversary: The 2000’s","authors":"Alan E. Willner","doi":"10.1109/JQE.2025.3609153","DOIUrl":"https://doi.org/10.1109/JQE.2025.3609153","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-2"},"PeriodicalIF":2.1,"publicationDate":"2025-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11224953","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-04DOI: 10.1109/JQE.2025.3617185
{"title":"Temporal Coupled-Mode Theory and the Presence of Non-Orthogonal Modes in Lossless Multimode Cavities","authors":"","doi":"10.1109/JQE.2025.3617185","DOIUrl":"https://doi.org/10.1109/JQE.2025.3617185","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-04DOI: 10.1109/JQE.2025.3617257
{"title":"Solid-State Time-of-Flight Range Camera","authors":"","doi":"10.1109/JQE.2025.3617257","DOIUrl":"https://doi.org/10.1109/JQE.2025.3617257","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-31DOI: 10.1109/JQE.2025.3627887
Yalçın Ata;Kamran Kiasaleh
Recently, quantum key distribution (QKD) has emerged as a prominent solution to provide secure and reliable communication in atmosphere. This paper investigates the effect of pointing error on the performance of QKD communication systems. The analytical solution of error and sift probabilities, quantum bit error rate (QBER) and secret key rate (SKR) are obtained depending on pointing error effect that is modeled by Rayleigh and Hoyt distributions. Our findings show that the increased beam waist, hence the increased pointing error, degrades the performance of QKD communication systems remarkably. Also, the symmetric pointing error, where horizontal and vertical pointing errors are equal, yields worse performance for QKD systems as compared to the asymmetric pointing error case where vertical and horizontal pointing errors are different. The undeniable effect of pointing error on the performance of QKD system highlights the importance of precise beam alignment to minimize the adverse effects of pointing errors, thereby ensuring the secure and efficient operation of QKD systems in various deployment scenarios.
{"title":"Pointing Error Influence on Quantum Key Distribution","authors":"Yalçın Ata;Kamran Kiasaleh","doi":"10.1109/JQE.2025.3627887","DOIUrl":"https://doi.org/10.1109/JQE.2025.3627887","url":null,"abstract":"Recently, quantum key distribution (QKD) has emerged as a prominent solution to provide secure and reliable communication in atmosphere. This paper investigates the effect of pointing error on the performance of QKD communication systems. The analytical solution of error and sift probabilities, quantum bit error rate (QBER) and secret key rate (SKR) are obtained depending on pointing error effect that is modeled by Rayleigh and Hoyt distributions. Our findings show that the increased beam waist, hence the increased pointing error, degrades the performance of QKD communication systems remarkably. Also, the symmetric pointing error, where horizontal and vertical pointing errors are equal, yields worse performance for QKD systems as compared to the asymmetric pointing error case where vertical and horizontal pointing errors are different. The undeniable effect of pointing error on the performance of QKD system highlights the importance of precise beam alignment to minimize the adverse effects of pointing errors, thereby ensuring the secure and efficient operation of QKD systems in various deployment scenarios.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-9"},"PeriodicalIF":2.1,"publicationDate":"2025-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-30DOI: 10.1109/JQE.2025.3618135
{"title":"IEEE Journal of Quantum Electronics Information for Authors","authors":"","doi":"10.1109/JQE.2025.3618135","DOIUrl":"https://doi.org/10.1109/JQE.2025.3618135","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"C3-C3"},"PeriodicalIF":2.1,"publicationDate":"2025-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11222770","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145405393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
InGaAs/InP single-photon avalanche photodiode (SPAD) with a triple-step diffusion morphology is designed and fabricated. The avalanche probability distribution evolves from a toroidal shape to a Gaussian-like shape as compared with the conventional double-step diffusion. Free-running measurements indicate that the photon detection efficiency of the triple-step SPAD increases from 3.4% to 11% in comparison with a double-step SPAD with the same thickness of the avalanche region and under the same conditions. Meanwhile, the dark count rate (DCR) and the afterpulsing probability (APP) are also decreased from 820 to 25 kHz and from 80% to 43% under a hold-off time of $8~mu $ s, respectively. Consistently higher activation energies of both the dark current and the DCR are obtained for the triple-step SPAD, tentatively attributed to the evolvement of the dominant source of dark carriers from the thermal generation in the InGaAs absorber to the trap-assisted tunneling in the InP multiplier. Theoretical simulations indicate a faster detrapping time of carriers within the avalanche region accounts for the reduced APP for the triple-step SPAD with a higher peak E-field.
{"title":"Planar InGaAs/InP Avalanche Photodiode With a Triple-Step Diffusion Junction","authors":"Qiong Wu;Yingjie Ma;Jingxian Bao;Liyi Yang;Shuangyan Deng;Yiwei He;Yueqi Zhai;Qinfei Xu;Junliang Liu;Lixia Zheng;Xue Li","doi":"10.1109/JQE.2025.3624349","DOIUrl":"https://doi.org/10.1109/JQE.2025.3624349","url":null,"abstract":"InGaAs/InP single-photon avalanche photodiode (SPAD) with a triple-step diffusion morphology is designed and fabricated. The avalanche probability distribution evolves from a toroidal shape to a Gaussian-like shape as compared with the conventional double-step diffusion. Free-running measurements indicate that the photon detection efficiency of the triple-step SPAD increases from 3.4% to 11% in comparison with a double-step SPAD with the same thickness of the avalanche region and under the same conditions. Meanwhile, the dark count rate (DCR) and the afterpulsing probability (APP) are also decreased from 820 to 25 kHz and from 80% to 43% under a hold-off time of <inline-formula> <tex-math>$8~mu $ </tex-math></inline-formula>s, respectively. Consistently higher activation energies of both the dark current and the DCR are obtained for the triple-step SPAD, tentatively attributed to the evolvement of the dominant source of dark carriers from the thermal generation in the InGaAs absorber to the trap-assisted tunneling in the InP multiplier. Theoretical simulations indicate a faster detrapping time of carriers within the avalanche region accounts for the reduced APP for the triple-step SPAD with a higher peak E-field.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-6"},"PeriodicalIF":2.1,"publicationDate":"2025-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-03DOI: 10.1109/JQE.2025.3617332
Hamed Saghaei;Kambiz Moez
In this paper, we present the design, simulation, fabrication, and characterization of a high-performance all-optical filter. It consists of three cascaded microring resonators and four integrated grating couplers, developed for precise wavelength selection within the telecom band (1500–1600 nm). The device was fabricated on a silicon-on-insulator platform using high-resolution electron beam lithography and encapsulated with a silica cladding layer to enhance mechanical robustness and increase the effective refractive index, resulting in superior optical performance. A fundamental aspect of the proposed design is systematic geometrical tailoring of critical parameters, including ring radius, waveguide width, coupling gap, coupling length, and the number of cascaded resonators, to allow precise control over the filter’s spectral characteristics. The fabricated filter achieves an ultra-narrow passband of 1.99 nm, a resonance power transfer efficiency exceeding 56%, and a Q-factor up to 804. The free spectral range (FSR) is shown to be design-dependent, varying between 27 nm and 37 nm as a function of ring radius, thus enabling flexible specification during the design phase. Experimental characterization using tunable lasers showed strong agreement with finite-difference time-domain simulations, validating the filter design. Extensive parametric studies were conducted to evaluate the influence of structural variations on key performance metrics, including resonance wavelength, Q-factor, transmission efficiency, and FSR. The proposed filter demonstrates outstanding spectral resolution, low insertion loss, and excellent efficiency, establishing it as a promising solution for advanced optical communications, high-precision photonic signal processing, and emerging nanophotonic systems.
{"title":"High-Performance SOI-Based Filter With Multiple Microring Resonators for Telecom Applications: Design, Fabrication, and Characterization","authors":"Hamed Saghaei;Kambiz Moez","doi":"10.1109/JQE.2025.3617332","DOIUrl":"https://doi.org/10.1109/JQE.2025.3617332","url":null,"abstract":"In this paper, we present the design, simulation, fabrication, and characterization of a high-performance all-optical filter. It consists of three cascaded microring resonators and four integrated grating couplers, developed for precise wavelength selection within the telecom band (1500–1600 nm). The device was fabricated on a silicon-on-insulator platform using high-resolution electron beam lithography and encapsulated with a silica cladding layer to enhance mechanical robustness and increase the effective refractive index, resulting in superior optical performance. A fundamental aspect of the proposed design is systematic geometrical tailoring of critical parameters, including ring radius, waveguide width, coupling gap, coupling length, and the number of cascaded resonators, to allow precise control over the filter’s spectral characteristics. The fabricated filter achieves an ultra-narrow passband of 1.99 nm, a resonance power transfer efficiency exceeding 56%, and a Q-factor up to 804. The free spectral range (FSR) is shown to be design-dependent, varying between 27 nm and 37 nm as a function of ring radius, thus enabling flexible specification during the design phase. Experimental characterization using tunable lasers showed strong agreement with finite-difference time-domain simulations, validating the filter design. Extensive parametric studies were conducted to evaluate the influence of structural variations on key performance metrics, including resonance wavelength, Q-factor, transmission efficiency, and FSR. The proposed filter demonstrates outstanding spectral resolution, low insertion loss, and excellent efficiency, establishing it as a promising solution for advanced optical communications, high-precision photonic signal processing, and emerging nanophotonic systems.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-13"},"PeriodicalIF":2.1,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145449343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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