Pub Date : 2024-12-30DOI: 10.1109/JQE.2024.3524133
Hans Wenzel;Eduard Kuhn;Ben King;Paul Crump;Mindaugas Radziunas
A general theory for the intrinsic (Lorentzian) linewidth of photonic-crystal surface-emitting lasers (PCSELs) is presented. The effect of spontaneous emission is modeled by a classical Langevin force entering the equation for the slowly varying waves. The solution of the coupled-wave equations, describing the propagation of four basic waves within the plane of the photonic crystal, is expanded in terms of the solutions of the associated spectral problem, i.e. the laser modes. Expressions are given for photon number, rate of spontaneous emission into the laser mode, Petermann factor and effective Henry factor entering the general formula for the linewidth. The theoretical framework is applied to the calculation of the linewidth-power product of air-hole and all-semiconductor PCSELs. For output powers in the Watt range, intrinsic linewidths in the kHz range are obtained in agreement with recent experimental results.
{"title":"Theory of the Linewidth–Power Product of Photonic–Crystal Surface–Emitting Lasers","authors":"Hans Wenzel;Eduard Kuhn;Ben King;Paul Crump;Mindaugas Radziunas","doi":"10.1109/JQE.2024.3524133","DOIUrl":"https://doi.org/10.1109/JQE.2024.3524133","url":null,"abstract":"A general theory for the intrinsic (Lorentzian) linewidth of photonic-crystal surface-emitting lasers (PCSELs) is presented. The effect of spontaneous emission is modeled by a classical Langevin force entering the equation for the slowly varying waves. The solution of the coupled-wave equations, describing the propagation of four basic waves within the plane of the photonic crystal, is expanded in terms of the solutions of the associated spectral problem, i.e. the laser modes. Expressions are given for photon number, rate of spontaneous emission into the laser mode, Petermann factor and effective Henry factor entering the general formula for the linewidth. The theoretical framework is applied to the calculation of the linewidth-power product of air-hole and all-semiconductor PCSELs. For output powers in the Watt range, intrinsic linewidths in the kHz range are obtained in agreement with recent experimental results.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-14"},"PeriodicalIF":2.2,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-23DOI: 10.1109/JQE.2024.3520776
{"title":"2024 Index IEEE Journal of Quantum Electronics Vol. 60","authors":"","doi":"10.1109/JQE.2024.3520776","DOIUrl":"https://doi.org/10.1109/JQE.2024.3520776","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-17"},"PeriodicalIF":2.2,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10812971","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142875079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-11DOI: 10.1109/JQE.2024.3514814
Qi Wang;Yingjie Ma;Bowen Liu;Runze Xia;Guixue Zhang;Yi Gu;Xue Li
A planar In0.53Ga0.47As avalanche photodiode (APD) with a triple-stage cascaded InAlAs/InAlGaAs multiplication structure is designed and fabricated. Double zinc-diffusion p-n junction is formed to suppress the perimeter premature breakdown. A low dark current of 4.8 nA at around breakdown voltage is obtained at room temperature for a $40~mu $ m diameter device with a maximum gain-bandwidth product of 216 GHz. The E-field profile is modulated by doping of a thin In0.52Al0.48As subcharge layer within each multiplication stage. Moreover, electron and hole potential wells are also introduced by the In0.52Al0.24Ga0.24As layers within each stage. The measured hole-initiated maximum gain factor and excess noise factor are 77 and F=6.3 at 200 K, respectively, which well agree with the predicted results base on the dead-space multiplication theory. These results indicate the planar multi-stage multiplication regime is a viable route for fabrication of APDs towards low excess noise while maintaining of a low dark current.
{"title":"Planar InGaAs Avalanche Photodiode With Multi-Stage InAlAs/InAlGaAs Multiplication Structure","authors":"Qi Wang;Yingjie Ma;Bowen Liu;Runze Xia;Guixue Zhang;Yi Gu;Xue Li","doi":"10.1109/JQE.2024.3514814","DOIUrl":"https://doi.org/10.1109/JQE.2024.3514814","url":null,"abstract":"A planar In0.53Ga0.47As avalanche photodiode (APD) with a triple-stage cascaded InAlAs/InAlGaAs multiplication structure is designed and fabricated. Double zinc-diffusion p-n junction is formed to suppress the perimeter premature breakdown. A low dark current of 4.8 nA at around breakdown voltage is obtained at room temperature for a \u0000<inline-formula> <tex-math>$40~mu $ </tex-math></inline-formula>\u0000m diameter device with a maximum gain-bandwidth product of 216 GHz. The E-field profile is modulated by doping of a thin In0.52Al0.48As subcharge layer within each multiplication stage. Moreover, electron and hole potential wells are also introduced by the In0.52Al0.24Ga0.24As layers within each stage. The measured hole-initiated maximum gain factor and excess noise factor are 77 and F=6.3 at 200 K, respectively, which well agree with the predicted results base on the dead-space multiplication theory. These results indicate the planar multi-stage multiplication regime is a viable route for fabrication of APDs towards low excess noise while maintaining of a low dark current.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-6"},"PeriodicalIF":2.2,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The rapid development of inverse design algorithms and the increasing availability of high-speed computing resources have made it possible to exploit heuristic algorithms to assist the design of photonic devices. This paper presents an automated intelligent design system for semiconductor photodetectors, which is capable of identifying the optimal performance of the photodetector under arbitrary material distribution. The aforementioned method was employed for the design of a modified uni-traveling carrier photodetector (MUTC-PD), exhibiting a bandwidth of 232GHz(@-5V) and an RF output power of 16.799dBm(@100GHz). In comparison to the original structure and traditional manual scanning methods, the bandwidth of this device has been increased by 96GHz and 25GHz, respectively, which serves to illustrate the effectiveness and superiority of this approach. Furthermore, the system is also instrumental in the discovery of new material combinations and structural designs, thereby driving innovation and advancement in the field of semiconductor photodetector technology.
{"title":"Ultrafast Photodiodes With High Saturation Power Based on an Automated Intelligent Design System","authors":"Junjing Huang;Xiaofeng Duan;Kai Liu;Yongqing Huang;Xiaomin Ren","doi":"10.1109/JQE.2024.3512436","DOIUrl":"https://doi.org/10.1109/JQE.2024.3512436","url":null,"abstract":"The rapid development of inverse design algorithms and the increasing availability of high-speed computing resources have made it possible to exploit heuristic algorithms to assist the design of photonic devices. This paper presents an automated intelligent design system for semiconductor photodetectors, which is capable of identifying the optimal performance of the photodetector under arbitrary material distribution. The aforementioned method was employed for the design of a modified uni-traveling carrier photodetector (MUTC-PD), exhibiting a bandwidth of 232GHz(@-5V) and an RF output power of 16.799dBm(@100GHz). In comparison to the original structure and traditional manual scanning methods, the bandwidth of this device has been increased by 96GHz and 25GHz, respectively, which serves to illustrate the effectiveness and superiority of this approach. Furthermore, the system is also instrumental in the discovery of new material combinations and structural designs, thereby driving innovation and advancement in the field of semiconductor photodetector technology.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-05DOI: 10.1109/JQE.2024.3512435
Cody Hammack;Levon V. Asryan
Electron-hole recombination outside of a quantum-confined active region presents a major challenge in conventional injection lasers. Double asymmetric barrier layers (DABLs) flanking the active region should efficiently suppress this parasitic recombination. One of the challenges still remaining in DABL lasers is the presence of excited states in the active region. In this work, the impact of such states in quantum dots (QDs) on static and dynamic characteristics of DABL QD lasers is examined. The most dramatic case is considered where carriers can only be captured into the QD excited state before decaying to the ground state and thus contributing to lasing. We show that there exist optimum values for the DC component of the injection current, QD surface density, and cavity length that maximize the laser modulation bandwidth. The maximum bandwidth itself is strongly controlled by intradot relaxation of carriers—while it remains almost unchanged at the excited-to-ground state relaxation times shorter than 0.01 ps, it drops considerably for longer relaxation times in the considered structures. A strict control of the parameters is thus essential in DABL QD lasers to increase their modulation bandwidth.
{"title":"Intradot Relaxation of Carriers and Modulation Bandwidth in Quantum Dot Lasers With Double Asymmetric Barrier Layers","authors":"Cody Hammack;Levon V. Asryan","doi":"10.1109/JQE.2024.3512435","DOIUrl":"https://doi.org/10.1109/JQE.2024.3512435","url":null,"abstract":"Electron-hole recombination outside of a quantum-confined active region presents a major challenge in conventional injection lasers. Double asymmetric barrier layers (DABLs) flanking the active region should efficiently suppress this parasitic recombination. One of the challenges still remaining in DABL lasers is the presence of excited states in the active region. In this work, the impact of such states in quantum dots (QDs) on static and dynamic characteristics of DABL QD lasers is examined. The most dramatic case is considered where carriers can only be captured into the QD excited state before decaying to the ground state and thus contributing to lasing. We show that there exist optimum values for the DC component of the injection current, QD surface density, and cavity length that maximize the laser modulation bandwidth. The maximum bandwidth itself is strongly controlled by intradot relaxation of carriers—while it remains almost unchanged at the excited-to-ground state relaxation times shorter than 0.01 ps, it drops considerably for longer relaxation times in the considered structures. A strict control of the parameters is thus essential in DABL QD lasers to increase their modulation bandwidth.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142858660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-05DOI: 10.1109/JQE.2024.3484048
Sonia M. García-Blanco;Lantian Chang;Pablo Sanchis
This Special Issue is associated with the European Conference on Integrated Optics (ECIO), held on April 19–21, 2023, in Enschede, The Netherlands. This conference was the 24th in a series that started in London in 1981. After the 2022 edition held in Milan, this new edition of the conference was hosted at the University of Twente with about 210 participants. The scientific sessions of the conference were opened with a plenary session by Prof. Miloš Popović of Boston University, USA, who presented the progress in electronic-photonic integrated circuits and systems.
{"title":"Guest Editorial JQE Special Issue Dedicated to the 24th European Conference on Integrated Optics","authors":"Sonia M. García-Blanco;Lantian Chang;Pablo Sanchis","doi":"10.1109/JQE.2024.3484048","DOIUrl":"https://doi.org/10.1109/JQE.2024.3484048","url":null,"abstract":"This Special Issue is associated with the European Conference on Integrated Optics (ECIO), held on April 19–21, 2023, in Enschede, The Netherlands. This conference was the 24th in a series that started in London in 1981. After the 2022 edition held in Milan, this new edition of the conference was hosted at the University of Twente with about 210 participants. The scientific sessions of the conference were opened with a plenary session by Prof. Miloš Popović of Boston University, USA, who presented the progress in electronic-photonic integrated circuits and systems.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-2"},"PeriodicalIF":2.2,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-05DOI: 10.1109/JQE.2024.3501783
{"title":"IEEE Journal of Quantum Electronics information for authors","authors":"","doi":"10.1109/JQE.2024.3501783","DOIUrl":"https://doi.org/10.1109/JQE.2024.3501783","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"C3-C3"},"PeriodicalIF":2.2,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10779367","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, an extremely dispersive optical fiber, incorporating a gradient-index central core and extra concentric ring structure of high-index material, is proposed and tailored specifically for the HE1,1 mode. The impacts of geometrical parameters and doping concentration are explored for the corresponding dispersion characteristics. By systematically adjusting diverse fiber parameters, it becomes evident that alterations in the curve slope discrepancies between the effective index of the central core and the outer ring directly influence both the optical dispersion peak and bandwidth. Consequently, the optical dispersion characteristics of the designed fiber can be customized to meet specific requirements by adjusting both fiber geometry and doping concentration of germanium dioxide. Further refinement of the fiber’s geometric parameters results in achieving a negative chromatic dispersion value of -203,898 ps/(nm $cdot $ km) at 1547.9 nm. Moreover, the peak dispersion magnitude in our gradient-index fiber design significantly surpasses that of the step-index fiber.
{"title":"Extremely Dispersive Fiber With Gradient-High-Index Core and Concentric Ring","authors":"Qinru Peng;Wenpu Geng;Wenqian Zhao;Yuanpeng Liu;Zhongqi Pan;Yang Yue","doi":"10.1109/JQE.2024.3506825","DOIUrl":"https://doi.org/10.1109/JQE.2024.3506825","url":null,"abstract":"In this work, an extremely dispersive optical fiber, incorporating a gradient-index central core and extra concentric ring structure of high-index material, is proposed and tailored specifically for the HE1,1 mode. The impacts of geometrical parameters and doping concentration are explored for the corresponding dispersion characteristics. By systematically adjusting diverse fiber parameters, it becomes evident that alterations in the curve slope discrepancies between the effective index of the central core and the outer ring directly influence both the optical dispersion peak and bandwidth. Consequently, the optical dispersion characteristics of the designed fiber can be customized to meet specific requirements by adjusting both fiber geometry and doping concentration of germanium dioxide. Further refinement of the fiber’s geometric parameters results in achieving a negative chromatic dispersion value of -203,898 ps/(nm\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000 km) at 1547.9 nm. Moreover, the peak dispersion magnitude in our gradient-index fiber design significantly surpasses that of the step-index fiber.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142858661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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