MoS2 Self-Switching Diode-Based Low Power Single and Three-Phase Bridge Rectifiers

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Nanotechnology Pub Date : 2023-12-29 DOI:10.1109/TNANO.2023.3348129

Sahil Garg;Bhavuk Sharma;Gaurav Mani Khanal;Sanjeev Kumar;Neena Gupta;S. R. Kasjoo;Aimin Song;Arun K. Singh

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Abstract

This work presents the molybdenum di-sulphide three-phase bridge rectifier integrated circuit utilizing the novel self-switching diode. The self-switching diode has a planar architecture having I-V behavior similar to an ideal diode. The structure of SSD is utilized to design single phase and three phase rectifiers. The performance in terms of rectification efficiency, total harmonic distortion, ripple factor and cut-off frequency has been evaluated and compared for both single and three phase SSDBR. The three-phase self-switching diode bridge rectifier (3P-SSDBR) has a cut-off frequency of ∼400 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 4.73% and 0.59, respectively. While, the single phase self-switching diode bridge rectifier (1P-SSDBR) has a cut-off frequency of ∼300 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 47.86% and 1.94, respectively. Further, to validate the obtained results, the simulation models have been calibrated with experimental and theoretical findings.

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基于 MoS2 自开关二极管的低功率单相和三相桥式整流器

本作品介绍了利用新型自开关二极管的二硫化钼三相桥式整流集成电路。自开关二极管具有平面结构，其 I-V 行为类似于理想二极管。自开关二极管的结构可用于设计单相和三相整流器。对单相和三相 SSDBR 的整流效率、总谐波失真、纹波系数和截止频率等性能进行了评估和比较。三相自开关二极管桥式整流器（3P-SSDBR）的截止频率为 400 MHz，总谐波失真（THD）和纹波系数（RF）分别为 4.73% 和 0.59。而单相自开关二极管桥式整流器（1P-SSDBR）的截止频率为 300 MHz，总谐波失真（THD）和纹波系数（RF）分别为 47.86% 和 1.94。此外，为了验证所获得的结果，还根据实验和理论结果对仿真模型进行了校准。

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.