Pub Date : 2024-10-28DOI: 10.1109/TNANO.2024.3487223
Nandit Kaushik;B. Srinivasu
In-Memory-Computing (IMC) through memristive architectures has recently gained traction owing to their capacity to perform logic operations within a crossbar, optimizing both area and speed constraints. This paper introduces two approximate serial IMPLY-based subtractor designs, denoted as Serial IMPLY-based Approximate Subtractor Design-1 (SIASD-1), Serial IMPLY-based Approximate Subtractor Design-2 (SIASD-2), with potential applications in image processing and deep neural networks. The proposed designs are implemented in MAGIC topology for comparison, named as Serial MAGIC-based Approximate Subtractor Design-1 (SMASD-1) and Serial MAGIC-based Approximate Subtractor Design-2 (SMASD-2). Moreover, these proposed subtractor designs are extended to design magnitude comparators. IMPLY-based approximate designs improve the overall latency up to 1.67× with energy savings in the range of 17.4% to 40.3% while occupying the same number of memristors for SIASD-1 and an increase of 3 to 5 memristors for SIASD-2, compared to the best existing exact 8-bit serial IMPLY subtractor. SMASD-1 and SMASD-2 improve the latency up to 1.43×, and energy efficiency are up by 77.6% compared to other MAGIC-based exact designs. Additionally, as comparators, the SIASD-1 and SIASD-2 are up to 4.93× faster with energy reduction up to 79.7% compared to their IMPLY-based equivalents. Similarly, the SMASD-1 and SMASD-2 reduce the latency up to 62% with area savings of 77%, compared to MAGIC-based equivalent designs. Furthermore, the proposed subtractor designs undergo analysis in an image processing application called Motion Detection, while the comparators are evaluated in Max Pooling operations. With Peak Signal-to-Noise Ratio (PSNR) and Structural Similarity Index Measure (SSIM) serving as assessment metrics, the proposed designs consistently demonstrate acceptable PSNR and SSIM values, affirming their suitability for these applications.
{"title":"High-Speed and Area-Efficient Serial IMPLY-Based Approximate Subtractor and Comparator for Image Processing and Neural Networks","authors":"Nandit Kaushik;B. Srinivasu","doi":"10.1109/TNANO.2024.3487223","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3487223","url":null,"abstract":"In-Memory-Computing (IMC) through memristive architectures has recently gained traction owing to their capacity to perform logic operations within a crossbar, optimizing both area and speed constraints. This paper introduces two approximate serial IMPLY-based subtractor designs, denoted as Serial IMPLY-based Approximate Subtractor Design-1 (SIASD-1), Serial IMPLY-based Approximate Subtractor Design-2 (SIASD-2), with potential applications in image processing and deep neural networks. The proposed designs are implemented in MAGIC topology for comparison, named as Serial MAGIC-based Approximate Subtractor Design-1 (SMASD-1) and Serial MAGIC-based Approximate Subtractor Design-2 (SMASD-2). Moreover, these proposed subtractor designs are extended to design magnitude comparators. IMPLY-based approximate designs improve the overall latency up to 1.67× with energy savings in the range of 17.4% to 40.3% while occupying the same number of memristors for SIASD-1 and an increase of 3 to 5 memristors for SIASD-2, compared to the best existing exact 8-bit serial IMPLY subtractor. SMASD-1 and SMASD-2 improve the latency up to 1.43×, and energy efficiency are up by 77.6% compared to other MAGIC-based exact designs. Additionally, as comparators, the SIASD-1 and SIASD-2 are up to 4.93× faster with energy reduction up to 79.7% compared to their IMPLY-based equivalents. Similarly, the SMASD-1 and SMASD-2 reduce the latency up to 62% with area savings of 77%, compared to MAGIC-based equivalent designs. Furthermore, the proposed subtractor designs undergo analysis in an image processing application called Motion Detection, while the comparators are evaluated in Max Pooling operations. With Peak Signal-to-Noise Ratio (PSNR) and Structural Similarity Index Measure (SSIM) serving as assessment metrics, the proposed designs consistently demonstrate acceptable PSNR and SSIM values, affirming their suitability for these applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"748-757"},"PeriodicalIF":2.1,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Current-driven spin-orbit-torque (SOT)-induced device is a promising candidate with nonvolatility, low energy consumption, and ultrafast speed for the next-generation storage and computing technique. However, the requirement of the assistant magnetic field hinders its application. Besides, the switching current density in SOT-induced devices still needs to be further reduced. Here, we prepared devices with stacks of Ta/Pt100-xWx/Co/AlOy/Pt and systematically investigated changes in the switching efficiency with W content. A high damping-like effective field per unit current density ηDL up to 40.57 ± 3.32 (Oe/(106 A/cm2)) was observed in the device with a Pt74W26 layer, which is one order of magnitude higher than that in the typical spin-orbit devices with pure heavy metal layer reported in the previous articles. In addition, field-free switching is observed in devices with a wide range of W content using the competing spin currents generated from the Pt100-xWx layer. Zero-field switching (ZFS) critical current densities of them are less than 1.09 ± 0.05 (107 A/cm2) with the minimum of 1.58 ± 0.13 (106 A/cm2), indicating the highly efficient field-free spin-orbit switching in the PtW system. Our findings pave the way to high-energy-efficiency spin-orbit devices.
{"title":"High-Efficiency Field-Free Spin-Orbit Switching Based on PtW Alloy Layer","authors":"Xiangyu Liu;Xiukai Lan;Zelalem Abebe Bekele;Weihao Li;Shouguo Zhu;Pengwei Dou;Yuanbo Wang;Jingyan Zhang;Shouguo Wang;Kaiyou Wang","doi":"10.1109/TNANO.2023.3313313","DOIUrl":"10.1109/TNANO.2023.3313313","url":null,"abstract":"Current-driven spin-orbit-torque (SOT)-induced device is a promising candidate with nonvolatility, low energy consumption, and ultrafast speed for the next-generation storage and computing technique. However, the requirement of the assistant magnetic field hinders its application. Besides, the switching current density in SOT-induced devices still needs to be further reduced. Here, we prepared devices with stacks of Ta/Pt<sub>100-<italic>x</italic></sub>W<italic><sub>x</sub></italic>/Co/AlO<italic><sub>y</sub></italic>/Pt and systematically investigated changes in the switching efficiency with W content. A high damping-like effective field per unit current density <italic>η</italic><sub>DL</sub> up to 40.57 ± 3.32 (Oe/(10<sup>6</sup> A/cm<sup>2</sup>)) was observed in the device with a Pt<sub>74</sub>W<sub>26</sub> layer, which is one order of magnitude higher than that in the typical spin-orbit devices with pure heavy metal layer reported in the previous articles. In addition, field-free switching is observed in devices with a wide range of W content using the competing spin currents generated from the Pt<sub>100-<italic>x</italic></sub>W<italic><sub>x</sub></italic> layer. Zero-field switching (ZFS) critical current densities of them are less than 1.09 ± 0.05 (10<sup>7</sup> A/cm<sup>2</sup>) with the minimum of 1.58 ± 0.13 (10<sup>6</sup> A/cm<sup>2</sup>), indicating the highly efficient field-free spin-orbit switching in the PtW system. Our findings pave the way to high-energy-efficiency spin-orbit devices.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"22 ","pages":"576-580"},"PeriodicalIF":2.4,"publicationDate":"2023-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"63037759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-07DOI: 10.1109/TNANO.2023.3312819
Amira Ali;Abdelsattar M. Sallam;M. Mohsen;Amal Kasry;Sameh O. Abdellatif
Cardiovascular diseases (CVDs) are the leading cause of death worldwide, killing over 17 million people yearly. A key biomarker for identifying myocardial infarction (MI) is the regulatory protein Cardiovascular Troponin I (cTnI), released into the blood following heart muscle injury. Significant efforts have been made in recent years to develop highly sensitive biosensors for the detection of cTnI. Field effect transistors (FETs) in general and organic FETs (OFETs) in specific have shown computability in detecting such cordial protein. In this study, we provide a complete attempt to fabricate and characterize polyaniline nanofiber (PANI-NFs) OFET for biosensing applications. The FTIR spectrum of PANI-NFs is examined before and after pAbs immobilization. To study the biosensor performance parameters, the biomarker drain current is investigated against the cTnI biomarker concentrations. The proposed OFET recorded high sensitivity of 484 nA.(g/mL) −1 , with a minimum detection limit (0.36 pg/mL) and power consumption varying from 7 μW to 11.4 μW. Finally, the biosensing repeatability was examined regarding variation in the P-FET device and the biasing conditions.
{"title":"Highly Sensitive, Low Operating Power Cardiac Troponin Biosensor Using PANI Nanofiber OFET","authors":"Amira Ali;Abdelsattar M. Sallam;M. Mohsen;Amal Kasry;Sameh O. Abdellatif","doi":"10.1109/TNANO.2023.3312819","DOIUrl":"10.1109/TNANO.2023.3312819","url":null,"abstract":"Cardiovascular diseases (CVDs) are the leading cause of death worldwide, killing over 17 million people yearly. A key biomarker for identifying myocardial infarction (MI) is the regulatory protein Cardiovascular Troponin I (cTnI), released into the blood following heart muscle injury. Significant efforts have been made in recent years to develop highly sensitive biosensors for the detection of cTnI. Field effect transistors (FETs) in general and organic FETs (OFETs) in specific have shown computability in detecting such cordial protein. In this study, we provide a complete attempt to fabricate and characterize polyaniline nanofiber (PANI-NFs) OFET for biosensing applications. The FTIR spectrum of PANI-NFs is examined before and after pAbs immobilization. To study the biosensor performance parameters, the biomarker drain current is investigated against the cTnI biomarker concentrations. The proposed OFET recorded high sensitivity of 484 nA.(g/mL)\u0000<sup>−1</sup>\u0000, with a minimum detection limit (0.36 pg/mL) and power consumption varying from 7 μW to 11.4 μW. Finally, the biosensing repeatability was examined regarding variation in the P-FET device and the biasing conditions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"22 ","pages":"558-563"},"PeriodicalIF":2.4,"publicationDate":"2023-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"63038066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-07DOI: 10.1109/TNANO.2023.3312949
Robert Carpenter;Woojin Kim;Kiroubanand Sankaran;Mohamed Ben Chroud;Maxwel Gama Monteiro;Johan Swerts;Gouri Sankar Kar;Sebastien Couet
One of the key challenges in the industrialisation of Voltage Controlled Magnetic Anisotropy-Magnetic Random Access Memory (VCMA-MRAM) is the reliability of the writing process. As VCMA is a non-deterministic write process, it is more sensitive to any offset of the Free Layer (FL) ( $mu _{0}H_{off}$ ) due to stray fields generated by the Hard Layer (HL)/Reference Layer (RL), as compared to alternative MRAM technologies. In this work, a simple method for the control of $mu _{0}H_{off}$ is demonstrated. The relative moments of the HL and RL can be tuned by varying the Co concentration, and number of repeats, in a typical Co/Pt HL. The effect of this is demonstrated at thin film and device level where a FL offset of $mu _{0}H_{off}=0$ mT is obtained, with minimal change in any other device properties. Furthermore, the switching probability distribution, with respect to VCMA pulse width, is shown to be symmetric in the optimised device. This result shows that with simple tuning, one of the key challenges to VCMA-MRAM can be solved.
{"title":"Offset Field Control for VCMA-MRAM","authors":"Robert Carpenter;Woojin Kim;Kiroubanand Sankaran;Mohamed Ben Chroud;Maxwel Gama Monteiro;Johan Swerts;Gouri Sankar Kar;Sebastien Couet","doi":"10.1109/TNANO.2023.3312949","DOIUrl":"10.1109/TNANO.2023.3312949","url":null,"abstract":"One of the key challenges in the industrialisation of Voltage Controlled Magnetic Anisotropy-Magnetic Random Access Memory (VCMA-MRAM) is the reliability of the writing process. As VCMA is a non-deterministic write process, it is more sensitive to any offset of the Free Layer (FL) (\u0000<inline-formula><tex-math>$mu _{0}H_{off}$</tex-math></inline-formula>\u0000) due to stray fields generated by the Hard Layer (HL)/Reference Layer (RL), as compared to alternative MRAM technologies. In this work, a simple method for the control of \u0000<inline-formula><tex-math>$mu _{0}H_{off}$</tex-math></inline-formula>\u0000 is demonstrated. The relative moments of the HL and RL can be tuned by varying the Co concentration, and number of repeats, in a typical Co/Pt HL. The effect of this is demonstrated at thin film and device level where a FL offset of \u0000<inline-formula><tex-math>$mu _{0}H_{off}=0$</tex-math></inline-formula>\u0000 mT is obtained, with minimal change in any other device properties. Furthermore, the switching probability distribution, with respect to VCMA pulse width, is shown to be symmetric in the optimised device. This result shows that with simple tuning, one of the key challenges to VCMA-MRAM can be solved.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"22 ","pages":"564-568"},"PeriodicalIF":2.4,"publicationDate":"2023-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"63038137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The increasing demand for high performance lithium ion batteries is pushing the research toward the development of new materials for electrodes. Our study focuses on the usage of Germanium as the active material for the negative electrode since it has a higher theoretical specific capacity than standard graphite-based electrodes. This research article provides insight into the electrochemical performance of thin films of Germanium deposited on metallic substrates and then nanostructured via electrochemical etching. Molybdenum and stainless steel are investigated as substrates and compared with regard to the performance of the resulting electrodes. The nanostructured Germanium electrodes show promising results, demonstrating a stable and high specific capacity for hundreds of cycles. The long-term stability of the cell together with a high rate capability proves the reliability of the cell engineered.
{"title":"Comparison of Porous Germanium Thin Films on SS and Mo as Anode for High-Performance LIBs","authors":"Valentina Diolaiti;Alfredo Andreoli;Susana Chauque;Paolo Bernardoni;Giulio Mangherini;Marco Ricci;Remo P. Zaccaria;Matteo Ferroni;Donato Vincenzi","doi":"10.1109/TNANO.2023.3311757","DOIUrl":"10.1109/TNANO.2023.3311757","url":null,"abstract":"The increasing demand for high performance lithium ion batteries is pushing the research toward the development of new materials for electrodes. Our study focuses on the usage of Germanium as the active material for the negative electrode since it has a higher theoretical specific capacity than standard graphite-based electrodes. This research article provides insight into the electrochemical performance of thin films of Germanium deposited on metallic substrates and then nanostructured via electrochemical etching. Molybdenum and stainless steel are investigated as substrates and compared with regard to the performance of the resulting electrodes. The nanostructured Germanium electrodes show promising results, demonstrating a stable and high specific capacity for hundreds of cycles. The long-term stability of the cell together with a high rate capability proves the reliability of the cell engineered.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"22 ","pages":"552-557"},"PeriodicalIF":2.4,"publicationDate":"2023-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10243542","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"63037997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-07DOI: 10.1109/TNANO.2023.3312943
Iuliia V. Vetrova;Juraj Feilhauer;Vladimír Cambel;Ján Šoltýs
We study magnetic force microscopy tips with a ferromagnetic disk-shaped apex (FMD tip). We find that it behaves as a paramagnetic-like tip when scanning large domains, i.e., it visualizes only the domain boundaries. Moreover, it significantly reduces the perturbation of soft magnetic samples and provides a longer probe lifetime compared to commercial low-moment probes. FMD tip was tested on a Co-based sample with out-of-plane magnetization and on a longitudinal magnetic media with in-plane recording. We prepared two FMD tips with disk diameters of 150 and 325 nm in order to analyze how the disk diameter affects the probe sensitivity and the measured width of the domain wall. Experimental results are supported by analytical calculations and numerical simulations.
{"title":"MFM Tip With a Ferromagnetic Disk-Shaped Apex for Large Domain Scanning","authors":"Iuliia V. Vetrova;Juraj Feilhauer;Vladimír Cambel;Ján Šoltýs","doi":"10.1109/TNANO.2023.3312943","DOIUrl":"10.1109/TNANO.2023.3312943","url":null,"abstract":"We study magnetic force microscopy tips with a ferromagnetic disk-shaped apex (FMD tip). We find that it behaves as a paramagnetic-like tip when scanning large domains, i.e., it visualizes only the domain boundaries. Moreover, it significantly reduces the perturbation of soft magnetic samples and provides a longer probe lifetime compared to commercial low-moment probes. FMD tip was tested on a Co-based sample with out-of-plane magnetization and on a longitudinal magnetic media with in-plane recording. We prepared two FMD tips with disk diameters of 150 and 325 nm in order to analyze how the disk diameter affects the probe sensitivity and the measured width of the domain wall. Experimental results are supported by analytical calculations and numerical simulations.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"22 ","pages":"634-640"},"PeriodicalIF":2.4,"publicationDate":"2023-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"63038082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-31DOI: 10.1109/TNANO.2023.3310501
Swapnendu N. Ghosh;Santanu Talukder
Electric field initiated chemical reactions result in surface modifications which have potential applications in the field of micro- and nano-scale patterning and the same is demonstrated through the electrolithography (ELG) technique. In ELG, electrochemical reaction backed modifications on chromium (Cr) thin films have resulted in patterns having a width in the nanometer range. The chemical reaction on the Cr surface results in the formation of a liquid compound. The reaction equation has a similar anatomy to that of a local anodic oxidation reaction. The liquid material formation process takes place under the influence of both unidirectional and alternating electric fields. However, the true nature of the formed liquid region, specifically its electronic characteristic, remains unknown. In this study, we explore the electrical properties of the said liquid domain by employing impedance spectroscopy. Frequency sweeps are carried out in a range spanning five orders of magnitude, from 10 Hz to 1 MHz, on the liquid region formed on electrical stressing of Cr films of thickness 100 nm. Based on the studies, a simple equivalent electrical circuit is proposed. The circuit model is justified with fundamental physics. The impedance spectroscopy results also help us to estimate a time constant for the liquid material formation process. The results of this study will help us better regulate the material formation process on Cr thin films and thereby control the ELG process better.
{"title":"Impedance Analysis of Liquid Film Formed on Electrically Stressed Cr Thin Films","authors":"Swapnendu N. Ghosh;Santanu Talukder","doi":"10.1109/TNANO.2023.3310501","DOIUrl":"10.1109/TNANO.2023.3310501","url":null,"abstract":"Electric field initiated chemical reactions result in surface modifications which have potential applications in the field of micro- and nano-scale patterning and the same is demonstrated through the electrolithography (ELG) technique. In ELG, electrochemical reaction backed modifications on chromium (Cr) thin films have resulted in patterns having a width in the nanometer range. The chemical reaction on the Cr surface results in the formation of a liquid compound. The reaction equation has a similar anatomy to that of a local anodic oxidation reaction. The liquid material formation process takes place under the influence of both unidirectional and alternating electric fields. However, the true nature of the formed liquid region, specifically its electronic characteristic, remains unknown. In this study, we explore the electrical properties of the said liquid domain by employing impedance spectroscopy. Frequency sweeps are carried out in a range spanning five orders of magnitude, from 10 Hz to 1 MHz, on the liquid region formed on electrical stressing of Cr films of thickness 100 nm. Based on the studies, a simple equivalent electrical circuit is proposed. The circuit model is justified with fundamental physics. The impedance spectroscopy results also help us to estimate a time constant for the liquid material formation process. The results of this study will help us better regulate the material formation process on Cr thin films and thereby control the ELG process better.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"22 ","pages":"584-589"},"PeriodicalIF":2.4,"publicationDate":"2023-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"63037983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
It is expected that Complementary Metal Oxide Semiconductor (CMOS) implementation with ever-smaller transistors will soon face significant issues such as device density, power consumption, and performance due to the requirement for challenging fabrication processes. Therefore, a new and promising computation paradigm, nanotechnology, can replace CMOS technology. In addition, a new frontier in computing is opened up by nanotechnology called atomic silicon, which has the same extraordinary behavior as quantum dots. On the other hand, atomic silicon circuits are highly prone to defects, so suggested fault-tolerant structures in this technology play important roles. The full adders have gained popularity and find widespread use in efficiently solving mathematical problems. In the following article, we will explore the development of an efficient fault-tolerant 3-input majority gate (FT-MV3) using DBs, further enhancing the capabilities of digital circuits. A rule-based approach to the redundant DB achieves a less complex and more robust atomic silicon layout for the MV3. We use the SiQAD tool to simulate proposed circuits. In addition, to confirm the efficiency of the proposed gate, all common defects, such as single and double dangling bond omission defects and DB dislocation defects, are examined. The suggested gate is 100% and 66.66% tolerant against single and double DB omission defects, respectively. Furthermore, a new adder design is introduced using the suggested FT-MV3 gate. The results show that the suggested adder is 44.44% and 35.35% tolerant against single and double DB omission defects. Finally, a fault-tolerant four-bit adder is designed based on the proposed adder.
{"title":"An Efficient Architecture of Adder Using Fault-Tolerant Majority Gate Based on Atomic Silicon Nanotechnology","authors":"Seyed-Sajad Ahmadpour;Nima Jafari Navimipour;Ali Newaz Bahar;Senay Yalcin","doi":"10.1109/TNANO.2023.3309908","DOIUrl":"10.1109/TNANO.2023.3309908","url":null,"abstract":"It is expected that Complementary Metal Oxide Semiconductor (CMOS) implementation with ever-smaller transistors will soon face significant issues such as device density, power consumption, and performance due to the requirement for challenging fabrication processes. Therefore, a new and promising computation paradigm, nanotechnology, can replace CMOS technology. In addition, a new frontier in computing is opened up by nanotechnology called atomic silicon, which has the same extraordinary behavior as quantum dots. On the other hand, atomic silicon circuits are highly prone to defects, so suggested fault-tolerant structures in this technology play important roles. The full adders have gained popularity and find widespread use in efficiently solving mathematical problems. In the following article, we will explore the development of an efficient fault-tolerant 3-input majority gate (FT-MV3) using DBs, further enhancing the capabilities of digital circuits. A rule-based approach to the redundant DB achieves a less complex and more robust atomic silicon layout for the MV3. We use the SiQAD tool to simulate proposed circuits. In addition, to confirm the efficiency of the proposed gate, all common defects, such as single and double dangling bond omission defects and DB dislocation defects, are examined. The suggested gate is 100% and 66.66% tolerant against single and double DB omission defects, respectively. Furthermore, a new adder design is introduced using the suggested FT-MV3 gate. The results show that the suggested adder is 44.44% and 35.35% tolerant against single and double DB omission defects. Finally, a fault-tolerant four-bit adder is designed based on the proposed adder.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"22 ","pages":"531-536"},"PeriodicalIF":2.4,"publicationDate":"2023-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"63037934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-29DOI: 10.1109/TNANO.2023.3309898
Junfan Wang;Jun Chen
The high carrier mobility in graphene, together with the ease of handling and good optical properties of colloidal quantum dots, provide high-performance materials for next-generation photodetectors. In this article, we investigated PbS quantum dots/graphene/Si near-infrared (NIR) photodetectors. The absorption of infrared light was increased by inserting a layer of Al 2 O 3 between graphene and Si to reduce the tunneling of carriers, and spin-coating PbS quantum dots on graphene to form a thin film by liquid phase exchange to replace ligands, thereby improving the device performance of PbS quantum dots/graphene/Si NIR photodetectors. Under the incident 1550 nm light, the responsivity of the detector is 0.16 A/W. Our work contributes to the study of related near-infrared silicon-based photodetectors.
{"title":"Photoresponsivity-Enhanced PbS Quantum Dots/Graphene/Silicon Near-Infrared Photodetectors","authors":"Junfan Wang;Jun Chen","doi":"10.1109/TNANO.2023.3309898","DOIUrl":"10.1109/TNANO.2023.3309898","url":null,"abstract":"The high carrier mobility in graphene, together with the ease of handling and good optical properties of colloidal quantum dots, provide high-performance materials for next-generation photodetectors. In this article, we investigated PbS quantum dots/graphene/Si near-infrared (NIR) photodetectors. The absorption of infrared light was increased by inserting a layer of Al\u0000<sub>2</sub>\u0000O\u0000<sub>3</sub>\u0000 between graphene and Si to reduce the tunneling of carriers, and spin-coating PbS quantum dots on graphene to form a thin film by liquid phase exchange to replace ligands, thereby improving the device performance of PbS quantum dots/graphene/Si NIR photodetectors. Under the incident 1550 nm light, the responsivity of the detector is 0.16 A/W. Our work contributes to the study of related near-infrared silicon-based photodetectors.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"22 ","pages":"525-530"},"PeriodicalIF":2.4,"publicationDate":"2023-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"63037461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-28DOI: 10.1109/TNANO.2023.3309411
Shreyas Tiwari;Rajesh Saha
In this work, a dielectric modulated (DM) I-shape Tunnel FET based label-free biosensor has been explored on considering both the repulsive steric effect (RSE) and trap effect in the TCAD simulator. The gate oxide layer is aligned over the N + pocket on both side source regions to enhance the tunneling rate. Moreover, the impact of trap impurities and steric effects are reported by extracting the drain current (I D ), energy band diagram, surface potential (ψ), current ratio, and drain current sensitivity (S ION ) for the variation in length of cavity (L C ), thickness of cavity (T C ), and supply voltage (V DS ). Furthermore, the noise assessment parameter has been explored on considering of same non-idealistic effects. It is seen that on considering RSE and trap impurities, the streptavidin biomolecules report an error in sensitivity (60.1%) NoTrap and (108.6%) Trap .
{"title":"Sensitivity Analysis of I-Shape TFET Biosensor Considering Repulsive Steric and Trap Effects","authors":"Shreyas Tiwari;Rajesh Saha","doi":"10.1109/TNANO.2023.3309411","DOIUrl":"10.1109/TNANO.2023.3309411","url":null,"abstract":"In this work, a dielectric modulated (DM) I-shape Tunnel FET based label-free biosensor has been explored on considering both the repulsive steric effect (RSE) and trap effect in the TCAD simulator. The gate oxide layer is aligned over the N\u0000<sup>+</sup>\u0000 pocket on both side source regions to enhance the tunneling rate. Moreover, the impact of trap impurities and steric effects are reported by extracting the drain current (I\u0000<sub>D</sub>\u0000), energy band diagram, surface potential (ψ), current ratio, and drain current sensitivity (S\u0000<sub>ION</sub>\u0000) for the variation in length of cavity (L\u0000<sub>C</sub>\u0000), thickness of cavity (T\u0000<sub>C</sub>\u0000), and supply voltage (V\u0000<sub>DS</sub>\u0000). Furthermore, the noise assessment parameter has been explored on considering of same non-idealistic effects. It is seen that on considering RSE and trap impurities, the streptavidin biomolecules report an error in sensitivity (60.1%)\u0000<sub>NoTrap</sub>\u0000 and (108.6%)\u0000<sub>Trap</sub>\u0000.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"22 ","pages":"518-524"},"PeriodicalIF":2.4,"publicationDate":"2023-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"63037406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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