Pub Date : 2026-01-20DOI: 10.1109/TNANO.2026.3656188
Sandeep Semwal;Pin Su;Abhinav Kranti
This paper proposes and analyzes various configurations of dual-doped (DD) reconfigurable field-effect transistors (RFET) that enable operation as p-type, n-type, and ambipolar operational modes through electrical connections of electrodes. This versatility, achieved through a single DD-RFET, is harnessed by demonstrating applications for analog design (frequency-doubling, phase-reversal, and phase-following applications) and logic operations (NOT, OR, NAND, and XOR). DD-RFET enables the realization of analog and logic blocks through a single device paving the way for area-efficient multifunctional processors.
{"title":"Electrically Configured Analog Signal Modulation and Logic Operation With Dual-Doped RFET","authors":"Sandeep Semwal;Pin Su;Abhinav Kranti","doi":"10.1109/TNANO.2026.3656188","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3656188","url":null,"abstract":"This paper proposes and analyzes various configurations of dual-doped (DD) reconfigurable field-effect transistors (RFET) that enable operation as <italic>p</i>-type, <italic>n</i>-type, and ambipolar operational modes through electrical connections of electrodes. This versatility, achieved through a single DD-RFET, is harnessed by demonstrating applications for analog design (frequency-doubling, phase-reversal, and phase-following applications) and logic operations (NOT, OR, NAND, and XOR). DD-RFET enables the realization of analog and logic blocks through a single device paving the way for area-efficient multifunctional processors.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"32-37"},"PeriodicalIF":2.1,"publicationDate":"2026-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146082209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-06DOI: 10.1109/TNANO.2026.3651874
{"title":"2025 Index IEEE Transactions on Nanotechnology Vol. 24","authors":"","doi":"10.1109/TNANO.2026.3651874","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3651874","url":null,"abstract":"","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"602-622"},"PeriodicalIF":2.1,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11333919","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Broadband plasmonic metamaterial absorbers are highly sought after for their use in energy harvesting applications. Here, we theoretically demonstrate a nanophotonic perfect meta-absorber comprised of a two-dimensional (2D) array of pyramidal multi-layered metal-dielectric (MD) structures. Each multi-layered structure has 20 pairs of alternating MD layers comprising titanium nitride (TiN) and silicon dioxide (SiO2), with an optically-thick TiN metal layer as back reflector. We theoretically show an exceptional average absorbance of 99.17% at normal incidence spanning ultra-broadband wavelength range of 0.3–5 μm, with peak absorbance of 99.99% at 1.28 μm wavelength. The proposed nanophotonic meta-absorber has an average absorbance of at least 94% for up to 60° of oblique incidence for random polarization. Thus, our proposed design is both angle-insensitive and polarization-independent. Our effective medium theory-based theoretical modeling comprehensively verifies the results obtained from full-wave simulations. Furthermore, the calculated figure-of-merit for the proposed meta-absorber suggests that it can outperform some broadband absorbers recently reported in the literature. Thus, the suggested meta-absorber has potential applications in energy harvesting and thermal infrared detection.
{"title":"Ultra-Broadband Polarization- and Angle-Insensitive Perfect Meta-Absorber for Energy Harvesting and Thermal Infrared Detection","authors":"Bodhan Chakraborty;Tanmay Bhowmik;Debabrata Sikdar","doi":"10.1109/TNANO.2026.3650804","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3650804","url":null,"abstract":"Broadband plasmonic metamaterial absorbers are highly sought after for their use in energy harvesting applications. Here, we theoretically demonstrate a nanophotonic perfect meta-absorber comprised of a two-dimensional (2D) array of pyramidal multi-layered metal-dielectric (MD) structures. Each multi-layered structure has 20 pairs of alternating MD layers comprising titanium nitride (TiN) and silicon dioxide (SiO<sub>2</sub>), with an optically-thick TiN metal layer as back reflector. We theoretically show an exceptional average absorbance of 99.17% at normal incidence spanning ultra-broadband wavelength range of 0.3–5 μm, with peak absorbance of 99.99% at 1.28 μm wavelength. The proposed nanophotonic meta-absorber has an average absorbance of at least 94% for up to 60° of oblique incidence for random polarization. Thus, our proposed design is both angle-insensitive and polarization-independent. Our effective medium theory-based theoretical modeling comprehensively verifies the results obtained from full-wave simulations. Furthermore, the calculated figure-of-merit for the proposed meta-absorber suggests that it can outperform some broadband absorbers recently reported in the literature. Thus, the suggested meta-absorber has potential applications in energy harvesting and thermal infrared detection.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"26-31"},"PeriodicalIF":2.1,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145996561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-26DOI: 10.1109/TNANO.2025.3648734
L. Hemanth Krishna;B. Srinivasu;K. Sridharan
In this paper, we present efficient designs of approximate ternary multipliers applicable to several emerging nanodevices. The proposed multipliers are motivated by the multiply-and-accumulate (MAC) operation in convolutional neural networks (CNNs). In particular, CNN applications in imaging are resilient to errors and it is therefore advantageous to examine methods that save energy and reduce the delay. Two approximate single-digit ternary multipliers are proposed. The single-digit approximate multipliers are used to develop an approximate $3 times 3$ and $6 times 6$ ternary multipliers. The proposed approximate $6 times 6$ multiplier saves energy in the range of 22% to 40% over recent approximate designs. Further, there is a reduction of delay of roughly 21$%$ with the proposed multipliers over the best existing design. The multipliers are based on their exact counterparts which are, in turn, developed using an efficient exact ternary carry adder (TCAD) that generates the sum of two carry outputs of a single ternary digit multiplier. The application of the approximate multipliers to CNN-based imaging is then demonstrated. In particular, the proposed approximate multipliers have excellent performance for CNN-based image denoising. Further, the approximate multipliers show good performance on MNIST and CIFAR-10 datasets. Simulations for Carbon Nanotube FET (CNTFET) reveal energy savings in excess of 50% over the best existing multipliers.
{"title":"Efficient Approximate Ternary Multipliers for Emerging Nanodevices","authors":"L. Hemanth Krishna;B. Srinivasu;K. Sridharan","doi":"10.1109/TNANO.2025.3648734","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3648734","url":null,"abstract":"In this paper, we present efficient designs of <italic>approximate ternary multipliers</i> applicable to several emerging nanodevices. The proposed multipliers are motivated by the multiply-and-accumulate (MAC) operation in convolutional neural networks (CNNs). In particular, CNN applications in imaging are resilient to errors and it is therefore advantageous to examine methods that save energy and reduce the delay. Two <italic>approximate single-digit ternary multipliers</i> are proposed. The single-digit approximate multipliers are used to develop an approximate <inline-formula><tex-math>$3 times 3$</tex-math></inline-formula> and <inline-formula><tex-math>$6 times 6$</tex-math></inline-formula> ternary multipliers. The proposed approximate <inline-formula><tex-math>$6 times 6$</tex-math></inline-formula> multiplier saves energy in the range of 22% to 40% over recent approximate designs. Further, there is a reduction of delay of roughly 21<inline-formula><tex-math>$%$</tex-math></inline-formula> with the proposed multipliers over the best existing design. The multipliers are based on their <italic>exact</i> counterparts which are, in turn, developed using an efficient exact <italic>ternary carry adder (TCAD)</i> that generates the sum of two carry outputs of a single ternary digit multiplier. The application of the approximate multipliers to CNN-based imaging is then demonstrated. In particular, the proposed approximate multipliers have excellent performance for CNN-based image denoising. Further, the approximate multipliers show good performance on MNIST and CIFAR-10 datasets. Simulations for Carbon Nanotube FET (CNTFET) reveal energy savings in excess of 50% over the best existing multipliers.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"1-12"},"PeriodicalIF":2.1,"publicationDate":"2025-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146082212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Negative capacitance FinFET (NC-FinFET) has shown excellent ability in suppressing short channel effect, reducing subthreshold swing (SS) and off-state current. In this paper, a new ferroelectric-width-varied negative capacitance double-gate FinFET (FWV-NC-DG-FinFET) is investigated. A new capacitance model fitted to FWV-NC-DG-FinFET is also established. The model is verified by TCAD simulation of FE/SiO2 interface potential. The influence of ferroelectric width variation and drain voltage VD on the gate-drain coupling is investigated by examining the simulation results of SS, threshold voltage, on-state current and off-state current, and NDR effect. The simulation results show that the FWV-NC-DG-FinFET with lager ferroelectric width at drain side results in severe gate-drain coupling effect and lead to ION/IOFF ratio over 107. In contrast, the FWV-NC-DG-FinFET with lager ferroelectric width at source side leads to slighter gate-drain coupling and is able to achieve SS of 51.9 mV/dec and reduce the increment of SS and threshold voltage with increased drain voltage. Meanwhile, the FWV-NC-DG-FinFET with lager ferroelectric width at source side can also mitigates the NDR effect. Furthermore, this paper presents a feasible method to fabricate such FWV-NC-DG-FinFET.
{"title":"Effect of Ferroelectric Width Variation on Gate-Drain Coupling in Negative Capacitance Double-Gate FinFET","authors":"Jiafei Yao;Jincheng Liu;Yeqin Zhu;Ziwei Hu;Maolin Zhang;Man Li;Kemeng Yang;Jing Chen;Jun Zhang;Yufeng Guo","doi":"10.1109/TNANO.2025.3636943","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3636943","url":null,"abstract":"Negative capacitance FinFET (NC-FinFET) has shown excellent ability in suppressing short channel effect, reducing subthreshold swing (SS) and off-state current. In this paper, a new ferroelectric-width-varied negative capacitance double-gate FinFET (FWV-NC-DG-FinFET) is investigated. A new capacitance model fitted to FWV-NC-DG-FinFET is also established. The model is verified by TCAD simulation of FE/SiO<sub>2</sub> interface potential. The influence of ferroelectric width variation and drain voltage <italic>V</i><sub>D</sub> on the gate-drain coupling is investigated by examining the simulation results of SS, threshold voltage, on-state current and off-state current, and NDR effect. The simulation results show that the FWV-NC-DG-FinFET with lager ferroelectric width at drain side results in severe gate-drain coupling effect and lead to <italic>I</i><sub>ON</sub>/<italic>I</i><sub>OFF</sub> ratio over 10<sup>7</sup>. In contrast, the FWV-NC-DG-FinFET with lager ferroelectric width at source side leads to slighter gate-drain coupling and is able to achieve SS of 51.9 mV/dec and reduce the increment of SS and threshold voltage with increased drain voltage. Meanwhile, the FWV-NC-DG-FinFET with lager ferroelectric width at source side can also mitigates the NDR effect. Furthermore, this paper presents a feasible method to fabricate such FWV-NC-DG-FinFET.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"585-592"},"PeriodicalIF":2.1,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145830828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-13DOI: 10.1109/TNANO.2025.3632531
Mohd Faizan;Sajad A. Loan;Neelofer Afzal;Hend I. Alkhammash
A leaky integrate-and-fire (LIF) neuron with excitatory characteristics is observed for the first time using a MOSFET with partial-ground-plane (PGP) based silicon on insulator for future neuromorphic computing, with a remarkable increase in integration density and energy consumption. Calibrated simulation demonstrates that the proposed device can accurately imitate a real neuron's spiking activity without the use of additional circuitry. Furthermore, the claimed PGP-SELBOX-MOSFET based LIF neuron, with gate length of 50 nm, exhibits a threshold voltage of 0.57 V and needs only 2.84 fJ energy to generate a spike signal, which is exceptionally low when compared to prior research. Moreover, the proposed neuron indicates a spiking frequency that falls within the gigahertz range, almost six orders of magnitude greater than the biological neurons. Additionally, reliability investigations of the n-channel PGP-MOSFET's Positive Bias Temperature Instability (PBTI) and temperature dependent reliability characteristics are carried out in this article. Moreover, the effects of SELBOX separation, PGP separation, PGP doping and temperature on the spiking voltage variations have also been investigated. We further explore the use of this neuron to develop reconfigurable threshold logic gates (TLG) that can be used to perform universal threshold logic gates like NOR and NAND. To validate its practical applicability, a multi-layer SNN was designed, which successfully achieved 92.72% accuracy in image recognition tasks using the proposed neuron.
{"title":"A Partial-Ground-Plane Based Silicon on Insulator Transistor for Energy-Efficient Leaky Integrate-and-Fire Neuron Realizations and Applications","authors":"Mohd Faizan;Sajad A. Loan;Neelofer Afzal;Hend I. Alkhammash","doi":"10.1109/TNANO.2025.3632531","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3632531","url":null,"abstract":"A leaky integrate-and-fire (LIF) neuron with excitatory characteristics is observed for the first time using a MOSFET with partial-ground-plane (PGP) based silicon on insulator for future neuromorphic computing, with a remarkable increase in integration density and energy consumption. Calibrated simulation demonstrates that the proposed device can accurately imitate a real neuron's spiking activity without the use of additional circuitry. Furthermore, the claimed PGP-SELBOX-MOSFET based LIF neuron, with gate length of 50 nm, exhibits a threshold voltage of 0.57 V and needs only 2.84 fJ energy to generate a spike signal, which is exceptionally low when compared to prior research. Moreover, the proposed neuron indicates a spiking frequency that falls within the gigahertz range, almost six orders of magnitude greater than the biological neurons. Additionally, reliability investigations of the n-channel PGP-MOSFET's Positive Bias Temperature Instability (PBTI) and temperature dependent reliability characteristics are carried out in this article. Moreover, the effects of SELBOX separation, PGP separation, PGP doping and temperature on the spiking voltage variations have also been investigated. We further explore the use of this neuron to develop reconfigurable threshold logic gates (TLG) that can be used to perform universal threshold logic gates like NOR and NAND. To validate its practical applicability, a multi-layer SNN was designed, which successfully achieved 92.72% accuracy in image recognition tasks using the proposed neuron.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"564-573"},"PeriodicalIF":2.1,"publicationDate":"2025-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145612103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This research was conducted to exploit a SnO2-based g-C3N4@SnO2 composite material by modification of SnO2 with a two-dimensional g-C3N4 material, aiming to upgrade the properties of ethanol detection. To verify the structural properties and composition of the composite, XRD, SEM, TEM and EDS techniques were employed for characterization. The findings indicate that the g-C3N4@SnO2 composites have been fabricated successfully and that g-C3N4 is efficiently modified in nanosheet form on the surface of SnO2 nanospheres. The experimental data further indicated that the g-C3N4@SnO2 composites exhibited outstanding ethanol detection performance. In particular, the optimal sensor properties were achieved at a g-C3N4 content of 10wt%. At 230 °C and 100 ppm ethanol concentration, the response value of the sensor is as high as 61, which is nearly two times higher compared to the response value of the SnO2 sensor at 250°C. Furthermore, it offers outstanding selectivity and faster response/recovery time. The notable enhancement in the sensing properties of the g-C3N4@SnO2 composites is primarily ascribed to the heterojunction formed at the interface of the g-C3N4 and SnO2 contacts, as well as the excellent catalytic properties displayed by the g-C3N4 as a two-dimensional material.
{"title":"High Response Ethanol Gas Sensor Based on g-C3N4@SnO2 Nanocomposites","authors":"Mengran Ran;Hongmin Zhu;Zhan Cheng;Yinghao Guo;Zhenyu Yuan;Fanli Meng","doi":"10.1109/TNANO.2025.3631690","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3631690","url":null,"abstract":"This research was conducted to exploit a SnO<sub>2</sub>-based g-C<sub>3</sub>N<sub>4</sub>@SnO<sub>2</sub> composite material by modification of SnO<sub>2</sub> with a two-dimensional g-C<sub>3</sub>N<sub>4</sub> material, aiming to upgrade the properties of ethanol detection. To verify the structural properties and composition of the composite, XRD, SEM, TEM and EDS techniques were employed for characterization. The findings indicate that the g-C<sub>3</sub>N<sub>4</sub>@SnO<sub>2</sub> composites have been fabricated successfully and that g-C<sub>3</sub>N<sub>4</sub> is efficiently modified in nanosheet form on the surface of SnO<sub>2</sub> nanospheres. The experimental data further indicated that the g-C<sub>3</sub>N<sub>4</sub>@SnO<sub>2</sub> composites exhibited outstanding ethanol detection performance. In particular, the optimal sensor properties were achieved at a g-C<sub>3</sub>N<sub>4</sub> content of 10wt%. At 230 °C and 100 ppm ethanol concentration, the response value of the sensor is as high as 61, which is nearly two times higher compared to the response value of the SnO<sub>2</sub> sensor at 250°C. Furthermore, it offers outstanding selectivity and faster response/recovery time. The notable enhancement in the sensing properties of the g-C<sub>3</sub>N<sub>4</sub>@SnO<sub>2</sub> composites is primarily ascribed to the heterojunction formed at the interface of the g-C<sub>3</sub>N<sub>4</sub> and SnO<sub>2</sub> contacts, as well as the excellent catalytic properties displayed by the g-C<sub>3</sub>N<sub>4</sub> as a two-dimensional material.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"574-584"},"PeriodicalIF":2.1,"publicationDate":"2025-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145612102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The increasing demand for gas sensors with rapid response, high selectivity, and pronounced sensitivity to trace levels of acetone is evident in both industrial processes and the clinical diagnosis of diabetes. In this study, FGO/Co3O4 sensors were synthesized using graphene chemically functionalized with hydroquinone molecules (FGO) and complexed with ZIF-67 derived Co3O4. The resultant sensors were evaluated for sensing capabilities, which revealed that the optimally formulated 1%FGO/Co3O4 sensor exhibited several advantageous traits when detecting acetone, including low operational temperature, elevated response value, and exceptionally low detection limit. Specifically, the 1%FGO/Co3O4 sensor achieved a response value of 180 to 100 ppm acetone at 100 °C and reached a detection limit of 100 ppb. The improved gas-sensitive performances are primarily contributed to the surface defects on composites, the distinctive three-dimensional structure of Co3O4, and the synergistic effect between FGO/Co3O4 after the formation of heterojunction. With excellent gas sensing properties and low power consumption levels, the FGO/Co3O4 sensor has significant potential for real-time monitoring of acetone in industrial environments and medical diagnostics.
{"title":"Low-Temperature and High-Performance Acetone Sensor Based on ZIF-67 Derived Co3O4 Modified by Functionalized Graphene","authors":"Zhiyuan Guo;Jian Zhang;Zhenyu Yuan;Hongmin Zhu;Huai Wang;Fanli Meng","doi":"10.1109/TNANO.2025.3628301","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3628301","url":null,"abstract":"The increasing demand for gas sensors with rapid response, high selectivity, and pronounced sensitivity to trace levels of acetone is evident in both industrial processes and the clinical diagnosis of diabetes. In this study, FGO/Co<sub>3</sub>O<sub>4</sub> sensors were synthesized using graphene chemically functionalized with hydroquinone molecules (FGO) and complexed with ZIF-67 derived Co<sub>3</sub>O<sub>4</sub>. The resultant sensors were evaluated for sensing capabilities, which revealed that the optimally formulated 1%FGO/Co<sub>3</sub>O<sub>4</sub> sensor exhibited several advantageous traits when detecting acetone, including low operational temperature, elevated response value, and exceptionally low detection limit. Specifically, the 1%FGO/Co<sub>3</sub>O<sub>4</sub> sensor achieved a response value of 180 to 100 ppm acetone at 100 °C and reached a detection limit of 100 ppb. The improved gas-sensitive performances are primarily contributed to the surface defects on composites, the distinctive three-dimensional structure of Co<sub>3</sub>O<sub>4</sub>, and the synergistic effect between FGO/Co<sub>3</sub>O<sub>4</sub> after the formation of heterojunction. With excellent gas sensing properties and low power consumption levels, the FGO/Co<sub>3</sub>O<sub>4</sub> sensor has significant potential for real-time monitoring of acetone in industrial environments and medical diagnostics.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"546-555"},"PeriodicalIF":2.1,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-20DOI: 10.1109/TNANO.2025.3623307
Ziang Chen;Li-Wei Chen;Xianyue Zhao;Kefeng Li;Heidemarie Krüger;Ilia Polian;Nan Du
Memristors, as emerging nano-devices, offer promising performance and exhibit rich electrical dynamic behavior. Having already found success in applications such as neuromorphic and in-memory computing, researchers are now exploring their potential for cryptographic implementations. In this study, we present a novel power-balanced hiding strategy utilizing memristor groups to conceal power consumption in cryptographic logic circuits. Our approach ensures consistent power costs of all 16 logic gates in Complementary-Resistive-Switching-with-Reading (CRS-R) logic family during writing and reading cycles regardless of Logic Input Variable (LIV) values. By constructing hiding groups, we enable an effective power balance in each gate hiding group. Furthermore, experimental validation of our strategy includes the implementation of a cryptographic construction, xor4SBox, using hiding groups containing NOR gates. The circuit construction without the hiding strategy and with the hiding strategy undergo Test Vector Leakage Assessment (TVLA) based on T-test, confirming the significant improvement achieved with our approach. To address the extensive data requirements necessitated by the T-test, simulated power traces are employed. Our work presents a substantial advancement in power-balanced hiding methods, offering enhanced security and efficiency in logic circuits.
{"title":"Power-Balanced Memristive Cryptographic Implementation Against Side Channel Attacks","authors":"Ziang Chen;Li-Wei Chen;Xianyue Zhao;Kefeng Li;Heidemarie Krüger;Ilia Polian;Nan Du","doi":"10.1109/TNANO.2025.3623307","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3623307","url":null,"abstract":"Memristors, as emerging nano-devices, offer promising performance and exhibit rich electrical dynamic behavior. Having already found success in applications such as neuromorphic and in-memory computing, researchers are now exploring their potential for cryptographic implementations. In this study, we present a novel power-balanced hiding strategy utilizing memristor groups to conceal power consumption in cryptographic logic circuits. Our approach ensures consistent power costs of all 16 logic gates in Complementary-Resistive-Switching-with-Reading (CRS-R) logic family during writing and reading cycles regardless of Logic Input Variable (LIV) values. By constructing hiding groups, we enable an effective power balance in each gate hiding group. Furthermore, experimental validation of our strategy includes the implementation of a cryptographic construction, xor4SBox, using hiding groups containing NOR gates. The circuit construction without the hiding strategy and with the hiding strategy undergo Test Vector Leakage Assessment (TVLA) based on T-test, confirming the significant improvement achieved with our approach. To address the extensive data requirements necessitated by the T-test, simulated power traces are employed. Our work presents a substantial advancement in power-balanced hiding methods, offering enhanced security and efficiency in logic circuits.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"518-528"},"PeriodicalIF":2.1,"publicationDate":"2025-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145405346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-15DOI: 10.1109/TNANO.2025.3622119
Anna Lee;Sebastian Carrillo;Young Seok Shon;Aftab Ahmed
Plasmonic nanoparticles have attracted considerable attention due to their ability to amplify local electric fields and generate hot-spots. These hot-spots are highly desirable for enhancing scattering and non-linear processes. Rough surfaces and sharp edges have been previously used for such applications. However, small hot-spot volume and inherent randomness limit their reliability and effectiveness. Here, we propose a design that utilizes interference of surface plasmon polaritons using array of nanocubes. We numerically study the analytical solutions of the metal-insulator-metal (MIM) geometry and conduct finite difference time domain simulations to investigate the optical response of the proposed design. The design offers over 1000-fold local field intensity enhancement which corresponds to over 106-fold Raman enhancement. We demonstrate field enhancement over a large area that we term the “hot-grid”. The design uses the propagating odd surface plasmon polariton mode of MIM geometry produced by an array of nanocubes. The extremely small gap of 1 nm produces significant field enhancement, which is further amplified by constructive interference achieved by multiple reflections, similar to a Fabry-Perot cavity. These results highlight the promise of nanocube arrays for applications that demand significant electric field enhancement, including nonlinear optics, photonics, spectroscopy, sensing, and imaging.
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