Pub Date : 2025-11-13DOI: 10.1109/TNANO.2025.3632531
Mohd Faizan;Sajad A. Loan;Neelofer Afzal;Hend I. Alkhammash
A leaky integrate-and-fire (LIF) neuron with excitatory characteristics is observed for the first time using a MOSFET with partial-ground-plane (PGP) based silicon on insulator for future neuromorphic computing, with a remarkable increase in integration density and energy consumption. Calibrated simulation demonstrates that the proposed device can accurately imitate a real neuron's spiking activity without the use of additional circuitry. Furthermore, the claimed PGP-SELBOX-MOSFET based LIF neuron, with gate length of 50 nm, exhibits a threshold voltage of 0.57 V and needs only 2.84 fJ energy to generate a spike signal, which is exceptionally low when compared to prior research. Moreover, the proposed neuron indicates a spiking frequency that falls within the gigahertz range, almost six orders of magnitude greater than the biological neurons. Additionally, reliability investigations of the n-channel PGP-MOSFET's Positive Bias Temperature Instability (PBTI) and temperature dependent reliability characteristics are carried out in this article. Moreover, the effects of SELBOX separation, PGP separation, PGP doping and temperature on the spiking voltage variations have also been investigated. We further explore the use of this neuron to develop reconfigurable threshold logic gates (TLG) that can be used to perform universal threshold logic gates like NOR and NAND. To validate its practical applicability, a multi-layer SNN was designed, which successfully achieved 92.72% accuracy in image recognition tasks using the proposed neuron.
{"title":"A Partial-Ground-Plane Based Silicon on Insulator Transistor for Energy-Efficient Leaky Integrate-and-Fire Neuron Realizations and Applications","authors":"Mohd Faizan;Sajad A. Loan;Neelofer Afzal;Hend I. Alkhammash","doi":"10.1109/TNANO.2025.3632531","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3632531","url":null,"abstract":"A leaky integrate-and-fire (LIF) neuron with excitatory characteristics is observed for the first time using a MOSFET with partial-ground-plane (PGP) based silicon on insulator for future neuromorphic computing, with a remarkable increase in integration density and energy consumption. Calibrated simulation demonstrates that the proposed device can accurately imitate a real neuron's spiking activity without the use of additional circuitry. Furthermore, the claimed PGP-SELBOX-MOSFET based LIF neuron, with gate length of 50 nm, exhibits a threshold voltage of 0.57 V and needs only 2.84 fJ energy to generate a spike signal, which is exceptionally low when compared to prior research. Moreover, the proposed neuron indicates a spiking frequency that falls within the gigahertz range, almost six orders of magnitude greater than the biological neurons. Additionally, reliability investigations of the n-channel PGP-MOSFET's Positive Bias Temperature Instability (PBTI) and temperature dependent reliability characteristics are carried out in this article. Moreover, the effects of SELBOX separation, PGP separation, PGP doping and temperature on the spiking voltage variations have also been investigated. We further explore the use of this neuron to develop reconfigurable threshold logic gates (TLG) that can be used to perform universal threshold logic gates like NOR and NAND. To validate its practical applicability, a multi-layer SNN was designed, which successfully achieved 92.72% accuracy in image recognition tasks using the proposed neuron.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"564-573"},"PeriodicalIF":2.1,"publicationDate":"2025-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145612103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This research was conducted to exploit a SnO2-based g-C3N4@SnO2 composite material by modification of SnO2 with a two-dimensional g-C3N4 material, aiming to upgrade the properties of ethanol detection. To verify the structural properties and composition of the composite, XRD, SEM, TEM and EDS techniques were employed for characterization. The findings indicate that the g-C3N4@SnO2 composites have been fabricated successfully and that g-C3N4 is efficiently modified in nanosheet form on the surface of SnO2 nanospheres. The experimental data further indicated that the g-C3N4@SnO2 composites exhibited outstanding ethanol detection performance. In particular, the optimal sensor properties were achieved at a g-C3N4 content of 10wt%. At 230 °C and 100 ppm ethanol concentration, the response value of the sensor is as high as 61, which is nearly two times higher compared to the response value of the SnO2 sensor at 250°C. Furthermore, it offers outstanding selectivity and faster response/recovery time. The notable enhancement in the sensing properties of the g-C3N4@SnO2 composites is primarily ascribed to the heterojunction formed at the interface of the g-C3N4 and SnO2 contacts, as well as the excellent catalytic properties displayed by the g-C3N4 as a two-dimensional material.
{"title":"High Response Ethanol Gas Sensor Based on g-C3N4@SnO2 Nanocomposites","authors":"Mengran Ran;Hongmin Zhu;Zhan Cheng;Yinghao Guo;Zhenyu Yuan;Fanli Meng","doi":"10.1109/TNANO.2025.3631690","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3631690","url":null,"abstract":"This research was conducted to exploit a SnO<sub>2</sub>-based g-C<sub>3</sub>N<sub>4</sub>@SnO<sub>2</sub> composite material by modification of SnO<sub>2</sub> with a two-dimensional g-C<sub>3</sub>N<sub>4</sub> material, aiming to upgrade the properties of ethanol detection. To verify the structural properties and composition of the composite, XRD, SEM, TEM and EDS techniques were employed for characterization. The findings indicate that the g-C<sub>3</sub>N<sub>4</sub>@SnO<sub>2</sub> composites have been fabricated successfully and that g-C<sub>3</sub>N<sub>4</sub> is efficiently modified in nanosheet form on the surface of SnO<sub>2</sub> nanospheres. The experimental data further indicated that the g-C<sub>3</sub>N<sub>4</sub>@SnO<sub>2</sub> composites exhibited outstanding ethanol detection performance. In particular, the optimal sensor properties were achieved at a g-C<sub>3</sub>N<sub>4</sub> content of 10wt%. At 230 °C and 100 ppm ethanol concentration, the response value of the sensor is as high as 61, which is nearly two times higher compared to the response value of the SnO<sub>2</sub> sensor at 250°C. Furthermore, it offers outstanding selectivity and faster response/recovery time. The notable enhancement in the sensing properties of the g-C<sub>3</sub>N<sub>4</sub>@SnO<sub>2</sub> composites is primarily ascribed to the heterojunction formed at the interface of the g-C<sub>3</sub>N<sub>4</sub> and SnO<sub>2</sub> contacts, as well as the excellent catalytic properties displayed by the g-C<sub>3</sub>N<sub>4</sub> as a two-dimensional material.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"574-584"},"PeriodicalIF":2.1,"publicationDate":"2025-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145612102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The increasing demand for gas sensors with rapid response, high selectivity, and pronounced sensitivity to trace levels of acetone is evident in both industrial processes and the clinical diagnosis of diabetes. In this study, FGO/Co3O4 sensors were synthesized using graphene chemically functionalized with hydroquinone molecules (FGO) and complexed with ZIF-67 derived Co3O4. The resultant sensors were evaluated for sensing capabilities, which revealed that the optimally formulated 1%FGO/Co3O4 sensor exhibited several advantageous traits when detecting acetone, including low operational temperature, elevated response value, and exceptionally low detection limit. Specifically, the 1%FGO/Co3O4 sensor achieved a response value of 180 to 100 ppm acetone at 100 °C and reached a detection limit of 100 ppb. The improved gas-sensitive performances are primarily contributed to the surface defects on composites, the distinctive three-dimensional structure of Co3O4, and the synergistic effect between FGO/Co3O4 after the formation of heterojunction. With excellent gas sensing properties and low power consumption levels, the FGO/Co3O4 sensor has significant potential for real-time monitoring of acetone in industrial environments and medical diagnostics.
{"title":"Low-Temperature and High-Performance Acetone Sensor Based on ZIF-67 Derived Co3O4 Modified by Functionalized Graphene","authors":"Zhiyuan Guo;Jian Zhang;Zhenyu Yuan;Hongmin Zhu;Huai Wang;Fanli Meng","doi":"10.1109/TNANO.2025.3628301","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3628301","url":null,"abstract":"The increasing demand for gas sensors with rapid response, high selectivity, and pronounced sensitivity to trace levels of acetone is evident in both industrial processes and the clinical diagnosis of diabetes. In this study, FGO/Co<sub>3</sub>O<sub>4</sub> sensors were synthesized using graphene chemically functionalized with hydroquinone molecules (FGO) and complexed with ZIF-67 derived Co<sub>3</sub>O<sub>4</sub>. The resultant sensors were evaluated for sensing capabilities, which revealed that the optimally formulated 1%FGO/Co<sub>3</sub>O<sub>4</sub> sensor exhibited several advantageous traits when detecting acetone, including low operational temperature, elevated response value, and exceptionally low detection limit. Specifically, the 1%FGO/Co<sub>3</sub>O<sub>4</sub> sensor achieved a response value of 180 to 100 ppm acetone at 100 °C and reached a detection limit of 100 ppb. The improved gas-sensitive performances are primarily contributed to the surface defects on composites, the distinctive three-dimensional structure of Co<sub>3</sub>O<sub>4</sub>, and the synergistic effect between FGO/Co<sub>3</sub>O<sub>4</sub> after the formation of heterojunction. With excellent gas sensing properties and low power consumption levels, the FGO/Co<sub>3</sub>O<sub>4</sub> sensor has significant potential for real-time monitoring of acetone in industrial environments and medical diagnostics.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"546-555"},"PeriodicalIF":2.1,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-20DOI: 10.1109/TNANO.2025.3623307
Ziang Chen;Li-Wei Chen;Xianyue Zhao;Kefeng Li;Heidemarie Krüger;Ilia Polian;Nan Du
Memristors, as emerging nano-devices, offer promising performance and exhibit rich electrical dynamic behavior. Having already found success in applications such as neuromorphic and in-memory computing, researchers are now exploring their potential for cryptographic implementations. In this study, we present a novel power-balanced hiding strategy utilizing memristor groups to conceal power consumption in cryptographic logic circuits. Our approach ensures consistent power costs of all 16 logic gates in Complementary-Resistive-Switching-with-Reading (CRS-R) logic family during writing and reading cycles regardless of Logic Input Variable (LIV) values. By constructing hiding groups, we enable an effective power balance in each gate hiding group. Furthermore, experimental validation of our strategy includes the implementation of a cryptographic construction, xor4SBox, using hiding groups containing NOR gates. The circuit construction without the hiding strategy and with the hiding strategy undergo Test Vector Leakage Assessment (TVLA) based on T-test, confirming the significant improvement achieved with our approach. To address the extensive data requirements necessitated by the T-test, simulated power traces are employed. Our work presents a substantial advancement in power-balanced hiding methods, offering enhanced security and efficiency in logic circuits.
{"title":"Power-Balanced Memristive Cryptographic Implementation Against Side Channel Attacks","authors":"Ziang Chen;Li-Wei Chen;Xianyue Zhao;Kefeng Li;Heidemarie Krüger;Ilia Polian;Nan Du","doi":"10.1109/TNANO.2025.3623307","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3623307","url":null,"abstract":"Memristors, as emerging nano-devices, offer promising performance and exhibit rich electrical dynamic behavior. Having already found success in applications such as neuromorphic and in-memory computing, researchers are now exploring their potential for cryptographic implementations. In this study, we present a novel power-balanced hiding strategy utilizing memristor groups to conceal power consumption in cryptographic logic circuits. Our approach ensures consistent power costs of all 16 logic gates in Complementary-Resistive-Switching-with-Reading (CRS-R) logic family during writing and reading cycles regardless of Logic Input Variable (LIV) values. By constructing hiding groups, we enable an effective power balance in each gate hiding group. Furthermore, experimental validation of our strategy includes the implementation of a cryptographic construction, xor4SBox, using hiding groups containing NOR gates. The circuit construction without the hiding strategy and with the hiding strategy undergo Test Vector Leakage Assessment (TVLA) based on T-test, confirming the significant improvement achieved with our approach. To address the extensive data requirements necessitated by the T-test, simulated power traces are employed. Our work presents a substantial advancement in power-balanced hiding methods, offering enhanced security and efficiency in logic circuits.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"518-528"},"PeriodicalIF":2.1,"publicationDate":"2025-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145405346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-15DOI: 10.1109/TNANO.2025.3622119
Anna Lee;Sebastian Carrillo;Young Seok Shon;Aftab Ahmed
Plasmonic nanoparticles have attracted considerable attention due to their ability to amplify local electric fields and generate hot-spots. These hot-spots are highly desirable for enhancing scattering and non-linear processes. Rough surfaces and sharp edges have been previously used for such applications. However, small hot-spot volume and inherent randomness limit their reliability and effectiveness. Here, we propose a design that utilizes interference of surface plasmon polaritons using array of nanocubes. We numerically study the analytical solutions of the metal-insulator-metal (MIM) geometry and conduct finite difference time domain simulations to investigate the optical response of the proposed design. The design offers over 1000-fold local field intensity enhancement which corresponds to over 106-fold Raman enhancement. We demonstrate field enhancement over a large area that we term the “hot-grid”. The design uses the propagating odd surface plasmon polariton mode of MIM geometry produced by an array of nanocubes. The extremely small gap of 1 nm produces significant field enhancement, which is further amplified by constructive interference achieved by multiple reflections, similar to a Fabry-Perot cavity. These results highlight the promise of nanocube arrays for applications that demand significant electric field enhancement, including nonlinear optics, photonics, spectroscopy, sensing, and imaging.
{"title":"Large-Area Field Enhancement via Plasmonic Hot-Grid in Nanocube Arrays","authors":"Anna Lee;Sebastian Carrillo;Young Seok Shon;Aftab Ahmed","doi":"10.1109/TNANO.2025.3622119","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3622119","url":null,"abstract":"Plasmonic nanoparticles have attracted considerable attention due to their ability to amplify local electric fields and generate hot-spots. These hot-spots are highly desirable for enhancing scattering and non-linear processes. Rough surfaces and sharp edges have been previously used for such applications. However, small hot-spot volume and inherent randomness limit their reliability and effectiveness. Here, we propose a design that utilizes interference of surface plasmon polaritons using array of nanocubes. We numerically study the analytical solutions of the metal-insulator-metal (MIM) geometry and conduct finite difference time domain simulations to investigate the optical response of the proposed design. The design offers over 1000-fold local field intensity enhancement which corresponds to over 10<sup>6</sup>-fold Raman enhancement. We demonstrate field enhancement over a large area that we term the “hot-grid”. The design uses the propagating odd surface plasmon polariton mode of MIM geometry produced by an array of nanocubes. The extremely small gap of 1 nm produces significant field enhancement, which is further amplified by constructive interference achieved by multiple reflections, similar to a Fabry-Perot cavity. These results highlight the promise of nanocube arrays for applications that demand significant electric field enhancement, including nonlinear optics, photonics, spectroscopy, sensing, and imaging.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"529-536"},"PeriodicalIF":2.1,"publicationDate":"2025-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145405308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-14DOI: 10.1109/TNANO.2025.3621301
Deepak Kumar;Cooper Meyers;RJ L. Smith;J. Todd Hastings
We report on the effect of ambient gas on the contrast and the resolution of electron beam lithography (EBL) in gaseous environments on insulating substrates. Poly(methyl methacrylate) (PMMA) films were exposed in an environmental scanning electron microscope using a 30 keV electron-beam under 1 mbar pressure of helium, water, nitrogen, and argon. We found that the choice of ambient gas results in significant variations in contrast, and the clearing dose increases with the gases’ molecular weight and proton number, consistent with the increase in scattering cross-section. Significantly higher contrast values are obtained for exposure under helium and are accompanied by improved sensitivity. Despite higher sensitivity, helium exhibited the best resolution with 20-nm half-pitch dense lines and spaces. However, water vapor offered a larger process window, particularly on fused silica substrates. We also provide evidence to support our hypothesis that higher sensitivity stems from effective charge dissipation. Thus, for EBL on insulating substrates, helium and water vapor may be desirable choices for charge dissipation depending on the substrate and process conditions.
{"title":"Enhancing Contrast and Resolution for Electron-Beam Lithography on Insulating Substrates","authors":"Deepak Kumar;Cooper Meyers;RJ L. Smith;J. Todd Hastings","doi":"10.1109/TNANO.2025.3621301","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3621301","url":null,"abstract":"We report on the effect of ambient gas on the contrast and the resolution of electron beam lithography (EBL) in gaseous environments on insulating substrates. Poly(methyl methacrylate) (PMMA) films were exposed in an environmental scanning electron microscope using a 30 keV electron-beam under 1 mbar pressure of helium, water, nitrogen, and argon. We found that the choice of ambient gas results in significant variations in contrast, and the clearing dose increases with the gases’ molecular weight and proton number, consistent with the increase in scattering cross-section. Significantly higher contrast values are obtained for exposure under helium and are accompanied by improved sensitivity. Despite higher sensitivity, helium exhibited the best resolution with 20-nm half-pitch dense lines and spaces. However, water vapor offered a larger process window, particularly on fused silica substrates. We also provide evidence to support our hypothesis that higher sensitivity stems from effective charge dissipation. Thus, for EBL on insulating substrates, helium and water vapor may be desirable choices for charge dissipation depending on the substrate and process conditions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"510-517"},"PeriodicalIF":2.1,"publicationDate":"2025-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145405371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Density functional theory (DFT) and non-equilibrium Green’s function (NEGF) formalism have been employed to investigate the prospects of zigzag germanium carbide nanoribbons (ZGeCNR) for spin filtering applications. We have considered total four possible configurations; firstly, symmetric edge-terminated configurations (H-ZGeCNR-H, 2H-ZGeCNR-2H) and secondly, asymmetric edge-terminated configurations (2H-ZGeCNR-H, H-ZGeCNR-2H). Based on energy calculation, we have predicted that 2H-GeCNR-H exhibits magnetic ground state with preferred ferromagnetic (FM) coupling $Delta$E = 0.137 meV. Calculated spin-polarized $E-k$ diagram and DOS profile calculation for 2H-GeCNR-H configuration implies a unique semi-metallic character for spin-down, whereas spin-up posses a wide bandgap of 2.33eV. This interesting half-metallic (HM) behaviour of compounded group-IV nanomaterials (such as SiC, GeC) are different from group-IV elemental counterparts such as (silicene, germanene), which exhibit bipolar magnetic semiconducting behaviour upon asymmetric termination. To demonstrate the behaviour of 2H-GeCNR-H as a spin-filter, $I-V$ calculations using two probe device model was performed with both parallel (P-case) and antiparallel (AP-case) spin orientation of the electrodes. The recorded values of $I-V$, transmission spectra clearly highlight the presence of only spin-down current in the channel for both P and AP cases, indicating almost 100% spin filtering efficiency. These results warrant 2H-ZGeCNR-H applicability for high-efficiency spin filters.
{"title":"Directional Spin Transport in Zigzag GeC Nanoribbons via Edge Engineering: A DFT-NEGF Perspective","authors":"Varun Sharma;Neha Bhardwaj;Pankaj Srivastava;Banti Yadav","doi":"10.1109/TNANO.2025.3620755","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3620755","url":null,"abstract":"Density functional theory (DFT) and non-equilibrium Green’s function (NEGF) formalism have been employed to investigate the prospects of zigzag germanium carbide nanoribbons (ZGeCNR) for spin filtering applications. We have considered total four possible configurations; firstly, symmetric edge-terminated configurations (H-ZGeCNR-H, 2H-ZGeCNR-2H) and secondly, asymmetric edge-terminated configurations (2H-ZGeCNR-H, H-ZGeCNR-2H). Based on energy calculation, we have predicted that 2H-GeCNR-H exhibits magnetic ground state with preferred ferromagnetic (FM) coupling <inline-formula><tex-math>$Delta$</tex-math></inline-formula>E = 0.137 meV. Calculated spin-polarized <inline-formula><tex-math>$E-k$</tex-math></inline-formula> diagram and DOS profile calculation for 2H-GeCNR-H configuration implies a unique semi-metallic character for spin-down, whereas spin-up posses a wide bandgap of 2.33eV. This interesting half-metallic (HM) behaviour of compounded group-IV nanomaterials (such as SiC, GeC) are different from group-IV elemental counterparts such as (silicene, germanene), which exhibit bipolar magnetic semiconducting behaviour upon asymmetric termination. To demonstrate the behaviour of 2H-GeCNR-H as a spin-filter, <inline-formula><tex-math>$I-V$</tex-math></inline-formula> calculations using two probe device model was performed with both parallel (P-case) and antiparallel (AP-case) spin orientation of the electrodes. The recorded values of <inline-formula><tex-math>$I-V$</tex-math></inline-formula>, transmission spectra clearly highlight the presence of only spin-down current in the channel for both P and AP cases, indicating almost 100% spin filtering efficiency. These results warrant 2H-ZGeCNR-H applicability for high-efficiency spin filters.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"556-563"},"PeriodicalIF":2.1,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-02DOI: 10.1109/TNANO.2025.3617228
Govind Prasad;Sankalp Tattwadarshi Swain
Static random access memory (SRAM) is widely used for its infinite configurability and high performance. However, magnetic RAM (MRAM) is gaining importance in the industry due to its zero leakage, non-volatility, and high radiation reliability. SRAM is susceptible to radiation-induced soft errors, a problem that MRAM mitigates due to its inherent resistance to such errors. Previously, MRAM has been used in various applications, including data storage, but challenges remained in optimizing its design for radiation resilience. In this paper, we have proposed MRAM structure for radiation applications featuring an advanced sense amplifier and precharge circuit. This new MRAM structure provides enhanced radiation hardening with better performance, making it suitable for critical applications in space and other radiation-prone environments.
{"title":"sETNM: Soft-Error-Tolerant Nonvolatile MRAM for Space Applications","authors":"Govind Prasad;Sankalp Tattwadarshi Swain","doi":"10.1109/TNANO.2025.3617228","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3617228","url":null,"abstract":"Static random access memory (SRAM) is widely used for its infinite configurability and high performance. However, magnetic RAM (MRAM) is gaining importance in the industry due to its zero leakage, non-volatility, and high radiation reliability. SRAM is susceptible to radiation-induced soft errors, a problem that MRAM mitigates due to its inherent resistance to such errors. Previously, MRAM has been used in various applications, including data storage, but challenges remained in optimizing its design for radiation resilience. In this paper, we have proposed MRAM structure for radiation applications featuring an advanced sense amplifier and precharge circuit. This new MRAM structure provides enhanced radiation hardening with better performance, making it suitable for critical applications in space and other radiation-prone environments.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"495-499"},"PeriodicalIF":2.1,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11189872","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145352060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With the advancement of optoelectronic technology, a new evaluation of photodetectors’ (PDs’) performance is necessary for next-generation sensing applications. This study uses the e-beam evaporation approach to produce slanted titanium dioxide columnar (TiO2-COL) on the Si substrate, with a constant deposition angle of ∼ 61°. The morphology, structural, and optical properties of the fabricated TiO2-COL samples were examined. Successful growth of the slanted TiO2-COL structure is demonstrated by field emission scanning electron microscopy (FE-SEM). Furthermore, XRD analyses reveal that TiO2-COL has an amorphous nature. Optical characterization reveals that the fabricated sample exhibits high absorption intensity in the UV region, for demonstrating a potential UV photodetector application. The TiO2-COL based PD that was deposited obliquely displayed I-V curves that demonstrated a distinct photovoltaic mode and an extremely low dark current of a few nanoamperes. Moreover, at ∼ 320 nm, the device exhibits a self-powered UV light response with a responsivity value of around ∼ 1.3 mA/W. In addition, this TiO2-COL based photodetector device demonstrates a remarkable detectivity and noise-equivalent-power (NEP) and rise time/fall time of ∼ 4.63 × 1010 Jones, ∼ 6.06 × 10−11 W and ∼ 0.305/0.184 sec, respectively, at −0.1 V. Therefore, this novel idea of a slanted TiO2-COL structure promotes effective light management and offers a reliable route for creating Low-powered UV PDs.
{"title":"Oblique Angle Deposition of Slanted TiO2 Columnar for UV Photodetector Application","authors":"Salam Surjit Singh;Naorem Khelchand Singh;Sapam Bikesh;Biraj Shougaijam","doi":"10.1109/TNANO.2025.3616005","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3616005","url":null,"abstract":"With the advancement of optoelectronic technology, a new evaluation of photodetectors’ (PDs’) performance is necessary for next-generation sensing applications. This study uses the e-beam evaporation approach to produce slanted titanium dioxide columnar (TiO<sub>2</sub>-COL) on the Si substrate, with a constant deposition angle of ∼ 61°. The morphology, structural, and optical properties of the fabricated TiO<sub>2</sub>-COL samples were examined. Successful growth of the slanted TiO<sub>2</sub>-COL structure is demonstrated by field emission scanning electron microscopy (FE-SEM). Furthermore, XRD analyses reveal that TiO<sub>2</sub>-COL has an amorphous nature. Optical characterization reveals that the fabricated sample exhibits high absorption intensity in the UV region, for demonstrating a potential UV photodetector application. The TiO<sub>2</sub>-COL based PD that was deposited obliquely displayed I-V curves that demonstrated a distinct photovoltaic mode and an extremely low dark current of a few nanoamperes. Moreover, at ∼ 320 nm, the device exhibits a self-powered UV light response with a responsivity value of around ∼ 1.3 mA/W. In addition, this TiO<sub>2</sub>-COL based photodetector device demonstrates a remarkable detectivity and noise-equivalent-power (NEP) and rise time/fall time of ∼ 4.63 × 10<sup>10</sup> Jones, ∼ 6.06 × 10<sup>−11</sup> W and ∼ 0.305/0.184 sec, respectively, at −0.1 V. Therefore, this novel idea of a slanted TiO<sub>2</sub>-COL structure promotes effective light management and offers a reliable route for creating Low-powered UV PDs.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"489-494"},"PeriodicalIF":2.1,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145255873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-25DOI: 10.1109/TNANO.2025.3614198
Xiangrong Pu;Haoming Qi;Gang Liu;Zhang Zhang
In industrial IoT and distributed computing environments, edge computing devices empowered by AI have seen increasing deployment in large-scale scenarios, thereby accelerating the demand for time-series data processing. The gated recurrent unit (GRU) outperforms conventional artificial neural networks (ANNs) in tasks such as natural language processing, speech recognition, and machine translation, due to its superior capability in modeling long-range dependencies in sequential data. However, the GRU model is limited by its large parameter count and structural complexity, which presents a bottleneck in hardware circuit implementation. To this end, a memristor-based hybrid gated recurrent unit (HGRU) is proposed, which reduces the parameter count to 67% of the original GRU and shortens the single-step computation latency by 50%, while maintaining complete circuit functionality. Finally, the proposed memristor-based HGRU circuit model is evaluated on the MNIST digit recognition and IMDB sentiment analysis tasks, achieving recognition accuracies of 97% and 86.2%, respectively. Under equivalent parameter settings, it achieves runtime reductions of 37% and 52% compared to the standard GRU, thereby significantly enhancing computational efficiency.
{"title":"Memristor-Based Circuit Demonstration of Hybrid Gated Recurrent Unit for Edge Computing","authors":"Xiangrong Pu;Haoming Qi;Gang Liu;Zhang Zhang","doi":"10.1109/TNANO.2025.3614198","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3614198","url":null,"abstract":"In industrial IoT and distributed computing environments, edge computing devices empowered by AI have seen increasing deployment in large-scale scenarios, thereby accelerating the demand for time-series data processing. The gated recurrent unit (GRU) outperforms conventional artificial neural networks (ANNs) in tasks such as natural language processing, speech recognition, and machine translation, due to its superior capability in modeling long-range dependencies in sequential data. However, the GRU model is limited by its large parameter count and structural complexity, which presents a bottleneck in hardware circuit implementation. To this end, a memristor-based hybrid gated recurrent unit (HGRU) is proposed, which reduces the parameter count to 67% of the original GRU and shortens the single-step computation latency by 50%, while maintaining complete circuit functionality. Finally, the proposed memristor-based HGRU circuit model is evaluated on the MNIST digit recognition and IMDB sentiment analysis tasks, achieving recognition accuracies of 97% and 86.2%, respectively. Under equivalent parameter settings, it achieves runtime reductions of 37% and 52% compared to the standard GRU, thereby significantly enhancing computational efficiency.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"481-488"},"PeriodicalIF":2.1,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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