Pub Date : 2024-12-31DOI: 10.1109/TNANO.2024.3524567
Ju-Won Yeon;Hyo-Jun Park;Eui-Cheol Yun;Moon-Kwon Lee;Tae-Hyun Kil;Yong-Sik Kim;Jun-Young Park
Recently, deuterium annealing at a reduced temperature range of 300 °C has been proposed to enhance SiO2 gate dielectrics and the Si/SiO2 interface, thereby improving device reliability. As a further investigation into deuterium annealing, for the first time this study compared deuterium absorption characteristics with various SiO2 dielectrics formed by wet oxidation, dry oxidation, low-pressure chemical vapor deposition (LPCVD), and plasma-enhanced chemical vapor deposition (PECVD). Deuterium annealing can also be used to reduce the roughness and improve the uniformity of SiO2 dielectric films. Surface roughness of various samples was measured and quantitatively compared using atomic force microscopy (AFM) after deuterium annealing.
{"title":"Improvement of Surface Roughness in SiO2 Thin Films via Deuterium Annealing at 300 °C","authors":"Ju-Won Yeon;Hyo-Jun Park;Eui-Cheol Yun;Moon-Kwon Lee;Tae-Hyun Kil;Yong-Sik Kim;Jun-Young Park","doi":"10.1109/TNANO.2024.3524567","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3524567","url":null,"abstract":"Recently, deuterium annealing at a reduced temperature range of 300 °C has been proposed to enhance SiO<sub>2</sub> gate dielectrics and the Si/SiO<sub>2</sub> interface, thereby improving device reliability. As a further investigation into deuterium annealing, for the first time this study compared deuterium absorption characteristics with various SiO<sub>2</sub> dielectrics formed by wet oxidation, dry oxidation, low-pressure chemical vapor deposition (LPCVD), and plasma-enhanced chemical vapor deposition (PECVD). Deuterium annealing can also be used to reduce the roughness and improve the uniformity of SiO<sub>2</sub> dielectric films. Surface roughness of various samples was measured and quantitatively compared using atomic force microscopy (AFM) after deuterium annealing.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"54-58"},"PeriodicalIF":2.1,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The power and energy densities of a Supercapacitor (SC) is largely dictated by the accessibility of the nano-porous area of the electrode to the electrolyte ions. Carbon nanotubes (CNT) have high electrical conductivity, and more importantly, may be grown into architectures with high surface area. However, this is not easy to achieve in practice. CNT electrodes are fabricated by chemical vapor deposition (CVD), after a metal catalyst layer is coated on a current collector. In this work, the control of the metal catalyst layer, by varying the dip-coating time and CVD process parameters, is shown to be crucial to pore morphology and consequent SC performance. The dip-coating time is adjusted to obtain thin and uniform coating. Further, optimum reduction of the nickel layer with hydrogen is required to produce thin CNTs with adequate inter-tube separation that facilitate ion accessibility within the pores. The height of the CNT forest is also optimized to prevent decrease in specific capacitance due to reduced accessibility. Proper optimization of the process parameters results in a pore morphology conductive to ion diffusion, and simultaneous improvement in energy and power density.
{"title":"On the Importance of the Metal Catalyst Layer to the Performance of CNT-Based Supercapacitor Electrodes","authors":"Kingshuk Chatterjee;Vinay Kumar;Prabhat Kumar Agnihotri;Sumit Basu;Nandini Gupta","doi":"10.1109/TNANO.2024.3523412","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3523412","url":null,"abstract":"The power and energy densities of a Supercapacitor (SC) is largely dictated by the accessibility of the nano-porous area of the electrode to the electrolyte ions. Carbon nanotubes (CNT) have high electrical conductivity, and more importantly, may be grown into architectures with high surface area. However, this is not easy to achieve in practice. CNT electrodes are fabricated by chemical vapor deposition (CVD), after a metal catalyst layer is coated on a current collector. In this work, the control of the metal catalyst layer, by varying the dip-coating time and CVD process parameters, is shown to be crucial to pore morphology and consequent SC performance. The dip-coating time is adjusted to obtain thin and uniform coating. Further, optimum reduction of the nickel layer with hydrogen is required to produce thin CNTs with adequate inter-tube separation that facilitate ion accessibility within the pores. The height of the CNT forest is also optimized to prevent decrease in specific capacitance due to reduced accessibility. Proper optimization of the process parameters results in a pore morphology conductive to ion diffusion, and simultaneous improvement in energy and power density.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"48-53"},"PeriodicalIF":2.1,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-25DOI: 10.1109/TNANO.2024.3522371
Tsung-Ying Yang;Mei-Yan Kuo;Jui-Sheng Wu;Yan-Kui Liang;Rahul Rai;Shivendra K. Rathaur;Edward Yi Chang
This study tested fluorine doping on various regions of the ferroelectric charge trap gate stack (FEG stack). Fluorine doping effectively reduces oxygen vacancies in the dielectric layer, thus reducing leakage current and stabilizing charge in the dielectric layer. Moreover, fluorine doping can passivate the dangling bonds at the interface and increase the ability of trapping carriers in the trap layer. The FEG stack comprises a tunnel oxide layer (TL), a charge trap layer (CTL), and a ferroelectric layer (FE). Four types of devices were fabricated: undoped, doping in TL, doping in CTL, and doping in both TL and CTL, to investigate the impact of fluorine doping on the FEG gate stack. Devices doping in TL and CTL demonstrated superior performance, achieving the highest V th of 5.4 V with a retention time of 70.42% after 10, 000 seconds. The off-state and gate leakage tests revealed impressive breakdown voltages of 735 V and 24.55 V, respectively. Furthermore, the device exhibited a high operation voltage of 14.3 V for a 10-year lifetime prediction, enabling a wide operating range.
{"title":"Improvement of the Enhancement-Mode GaN MIS-HEMTs by Fluorine Doping in the Dielectric Gate Stack","authors":"Tsung-Ying Yang;Mei-Yan Kuo;Jui-Sheng Wu;Yan-Kui Liang;Rahul Rai;Shivendra K. Rathaur;Edward Yi Chang","doi":"10.1109/TNANO.2024.3522371","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3522371","url":null,"abstract":"This study tested fluorine doping on various regions of the ferroelectric charge trap gate stack (FEG stack). Fluorine doping effectively reduces oxygen vacancies in the dielectric layer, thus reducing leakage current and stabilizing charge in the dielectric layer. Moreover, fluorine doping can passivate the dangling bonds at the interface and increase the ability of trapping carriers in the trap layer. The FEG stack comprises a tunnel oxide layer (TL), a charge trap layer (CTL), and a ferroelectric layer (FE). Four types of devices were fabricated: undoped, doping in TL, doping in CTL, and doping in both TL and CTL, to investigate the impact of fluorine doping on the FEG gate stack. Devices doping in TL and CTL demonstrated superior performance, achieving the highest V\u0000<sub>th</sub>\u0000 of 5.4 V with a retention time of 70.42% after 10, 000 seconds. The off-state and gate leakage tests revealed impressive breakdown voltages of 735 V and 24.55 V, respectively. Furthermore, the device exhibited a high operation voltage of 14.3 V for a 10-year lifetime prediction, enabling a wide operating range.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"42-47"},"PeriodicalIF":2.1,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-25DOI: 10.1109/TNANO.2024.3522368
Sanjana Devi VS;Balraj B;Amuthameena S;Joby Titus T
This study investigates the enhancement of hydrogen (H 2 ) gas sensing in nitrogen-doped Zinc Oxide (ZnO) nanomaterials through the decoration of gold (Au) nanoparticles. ZnO nanoparticles were synthesized via a wet chemical method, doped with nitrogen at 0.5%, 1.0%, and 1.5% concentrations, and decorated with Au nanoparticles. Characterization using X-ray diffraction (XRD) revealed that the ZnO structure remained intact, with the addition of a peak corresponding to Au at 38.19°. Transmission electron microscopy (TEM) confirmed the uniform distribution of spherical Au nanoparticles on the ZnO surfaces. UV-Vis spectroscopy showed an enhanced absorption peak at 532 nm due to surface plasmon resonance. Photoluminescence (PL) spectra indicated reduced emission intensity, suggesting effective charge transfer between ZnO and Au. Gas sensing tests revealed that Au-decorated 1.0 wt. % N exhibited a maximum H 2 gas response of 89% at 200 °C, significantly higher than the 46% response of non-decorated 1.0 wt. % N. Additionally, the Au-decorated N sensors demonstrated a rapid response time of 10 sec and a recovery time of 15 sec. These results highlight the potential of Au-decorated N-doped nanomaterials as highly efficient H 2 gas sensors, combining enhanced sensitivity with fast response kinetics.
{"title":"Enhanced Hydrogen Gas Sensing Performance of Gold Nanoparticle Decorated Nitrogen-Doped ZnO Nanomaterials for Improved Sensitivity and Rapid Response","authors":"Sanjana Devi VS;Balraj B;Amuthameena S;Joby Titus T","doi":"10.1109/TNANO.2024.3522368","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3522368","url":null,"abstract":"This study investigates the enhancement of hydrogen (H\u0000<sub>2</sub>\u0000) gas sensing in nitrogen-doped Zinc Oxide (ZnO) nanomaterials through the decoration of gold (Au) nanoparticles. ZnO nanoparticles were synthesized via a wet chemical method, doped with nitrogen at 0.5%, 1.0%, and 1.5% concentrations, and decorated with Au nanoparticles. Characterization using X-ray diffraction (XRD) revealed that the ZnO structure remained intact, with the addition of a peak corresponding to Au at 38.19°. Transmission electron microscopy (TEM) confirmed the uniform distribution of spherical Au nanoparticles on the ZnO surfaces. UV-Vis spectroscopy showed an enhanced absorption peak at 532 nm due to surface plasmon resonance. Photoluminescence (PL) spectra indicated reduced emission intensity, suggesting effective charge transfer between ZnO and Au. Gas sensing tests revealed that Au-decorated 1.0 wt. % N exhibited a maximum H\u0000<sub>2</sub>\u0000 gas response of 89% at 200 °C, significantly higher than the 46% response of non-decorated 1.0 wt. % N. Additionally, the Au-decorated N sensors demonstrated a rapid response time of 10 sec and a recovery time of 15 sec. These results highlight the potential of Au-decorated N-doped nanomaterials as highly efficient H\u0000<sub>2</sub>\u0000 gas sensors, combining enhanced sensitivity with fast response kinetics.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"27-33"},"PeriodicalIF":2.1,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-13DOI: 10.1109/TNANO.2024.3517161
Valeriy A. Slipko;Yuriy V. Pershin
This theoretical study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. Typically, the structure of ReRAM cells involves a nanoscale layer of resistance-switching material sandwiched between two metal electrodes. The basic question that we ask is what is the optimal driving protocol to switch a memristive device from one state to another. In the case of ideal memristors, in the most basic scenario, the optimal protocol is determined by solving a variational problem without constraints with the help of the Euler-Lagrange equation. In the case of memristive systems, for the same situation, the optimal protocol is found using the method of Lagrange multipliers. We demonstrate the advantages of our approaches through specific examples and compare our results with those of switching with constant voltage or current. Our findings suggest that voltage or current control can be used to reduce Joule losses in emerging memory devices.
{"title":"Reduction of Joule Losses in Memristive Switching Using Optimal Control","authors":"Valeriy A. Slipko;Yuriy V. Pershin","doi":"10.1109/TNANO.2024.3517161","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3517161","url":null,"abstract":"This theoretical study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. Typically, the structure of ReRAM cells involves a nanoscale layer of resistance-switching material sandwiched between two metal electrodes. The basic question that we ask is what is the optimal driving protocol to switch a memristive device from one state to another. In the case of ideal memristors, in the most basic scenario, the optimal protocol is determined by solving a variational problem without constraints with the help of the Euler-Lagrange equation. In the case of memristive systems, for the same situation, the optimal protocol is found using the method of Lagrange multipliers. We demonstrate the advantages of our approaches through specific examples and compare our results with those of switching with constant voltage or current. Our findings suggest that voltage or current control can be used to reduce Joule losses in emerging memory devices.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"8-16"},"PeriodicalIF":2.1,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article presents an electronically tunable metasurface wideband absorber with a graphene-based unit cell designed for the lower terahertz (0.1 THz– 10 THz) region. Surface plasmonics and the controllable conductance of graphene make it ideal for this purpose. Dual wideband absorption ( $ >$ 90% absorptivity) was observed from 0.682 to 1.798 THz (90% fractional bandwidth) and 4.187 to 4.947 THz (16% fractional bandwidth). The absorber is insensitive to polarizations and oblique incidences up to 45°. The unit cell comprises a double elliptical-cross graphene monolayer on a polyimide substrate (dielectric constant: 3.5, loss tangent: 0.0024) backed by an ultra-thin gold layer. Plasmonic resonance, introduced by four semicircular slots, causes absorption from 4.15 to 4.95 THz. Absorption properties were verified through a transmission line model and finite element method (FEM) simulations. Tunability is investigated via gating potential, carrier relaxation time, and Fermi energy variations.
{"title":"Polarization Insensitive Graphene Based Tunable Metasurface Terahertz Dual-Band Absorber","authors":"Niten Kumar Panda;Sraddhanjali Mohapatra;Sudhakar Sahu","doi":"10.1109/TNANO.2024.3515459","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3515459","url":null,"abstract":"This article presents an electronically tunable metasurface wideband absorber with a graphene-based unit cell designed for the lower terahertz (0.1 THz– 10 THz) region. Surface plasmonics and the controllable conductance of graphene make it ideal for this purpose. Dual wideband absorption (\u0000<inline-formula><tex-math>$ >$</tex-math></inline-formula>\u000090% absorptivity) was observed from 0.682 to 1.798 THz (90% fractional bandwidth) and 4.187 to 4.947 THz (16% fractional bandwidth). The absorber is insensitive to polarizations and oblique incidences up to 45°. The unit cell comprises a double elliptical-cross graphene monolayer on a polyimide substrate (dielectric constant: 3.5, loss tangent: 0.0024) backed by an ultra-thin gold layer. Plasmonic resonance, introduced by four semicircular slots, causes absorption from 4.15 to 4.95 THz. Absorption properties were verified through a transmission line model and finite element method (FEM) simulations. Tunability is investigated via gating potential, carrier relaxation time, and Fermi energy variations.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"34-41"},"PeriodicalIF":2.1,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article, a cost-effective technique for the synthesis of gamma iron oxide nanoparticles has been proposed for intelligent maghemite electrode applications pitched in the context of smart and efficient energy storage solution. A facile process-optimized technique for synthesis of gamma iron oxide nanoparticles has been designed in order to investigate the optimum temperature, doping and pH of the sodium hydroxide. By dint of morphological investigation, it has been established that the samples have high surface area, crystalline structure, and size in the range of fifty to hundred angstrom. The linearity of the magnetization feature coupled with its doping sensitivity points towards its usage for state estimation technology of the energy storage device management. The nano-scaled samples witness an increase of 75%–110% in the direct bandgap in comparison to its bulk existence. This band gap modulation establishes that the conductivity can be improved for electrode application by doping. High surface area for the active material ingredient nano-particles has also been confirmed by BET surface area of up to 75 m 2 /g. Thermal analyses of the samples establish the fidelity of the samples’ constitution over a desirably wide temperature range. The cost-effectiveness of gamma-iron oxide batteries will be a crucial factor for faster adoption of indigenous renewable energy storage solutions.
{"title":"Iron-Ion Nanoparticles for Smart and Cost-Effective Energy Storage Cell Electrode Integration Using Novel Nano-Sedimentation Method","authors":"Himanshu Priyadarshi;Ashish Shrivastava;Dhaneshwar Mishra;Kulwant Singh","doi":"10.1109/TNANO.2024.3510757","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3510757","url":null,"abstract":"In this article, a cost-effective technique for the synthesis of gamma iron oxide nanoparticles has been proposed for intelligent maghemite electrode applications pitched in the context of smart and efficient energy storage solution. A facile process-optimized technique for synthesis of gamma iron oxide nanoparticles has been designed in order to investigate the optimum temperature, doping and pH of the sodium hydroxide. By dint of morphological investigation, it has been established that the samples have high surface area, crystalline structure, and size in the range of fifty to hundred angstrom. The linearity of the magnetization feature coupled with its doping sensitivity points towards its usage for state estimation technology of the energy storage device management. The nano-scaled samples witness an increase of 75%–110% in the direct bandgap in comparison to its bulk existence. This band gap modulation establishes that the conductivity can be improved for electrode application by doping. High surface area for the active material ingredient nano-particles has also been confirmed by BET surface area of up to 75 m\u0000<sup>2</sup>\u0000/g. Thermal analyses of the samples establish the fidelity of the samples’ constitution over a desirably wide temperature range. The cost-effectiveness of gamma-iron oxide batteries will be a crucial factor for faster adoption of indigenous renewable energy storage solutions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"17-26"},"PeriodicalIF":2.1,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A label-free platform based on integration of cantilever and photonic crystal cavity resonator is reported with both high sensitivity and ultra-high quality factor for femto-gram detection of chemicals. The proposed chemical sensor shows sharp resonant frequency with quality factor of 12800, displacement and wavelength shift is obtained as 29.9425 μm and 7.15625 nm with chemical weight of 100 fg. The proposed sensor shows a high confinement factor of 62%, with an average sensitivity of 1.62 nm/fg manifested its promising applications for detection of various virus present in chemicals. The device shows capability to work in various fluids for chemical sensing purposes.
{"title":"Ultra-High Quality Factor NOMS Device Incorporating Photonic Crystal Cavity for Femto-Gram Sensing","authors":"Saurabh Agarwal;Kurmendra;Chandra Prakash;Sumar Kumar Mitra;Amitesh Kumar","doi":"10.1109/TNANO.2024.3509444","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3509444","url":null,"abstract":"A label-free platform based on integration of cantilever and photonic crystal cavity resonator is reported with both high sensitivity and ultra-high quality factor for femto-gram detection of chemicals. The proposed chemical sensor shows sharp resonant frequency with quality factor of 12800, displacement and wavelength shift is obtained as 29.9425 μm and 7.15625 nm with chemical weight of 100 fg. The proposed sensor shows a high confinement factor of 62%, with an average sensitivity of 1.62 nm/fg manifested its promising applications for detection of various virus present in chemicals. The device shows capability to work in various fluids for chemical sensing purposes.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"1-7"},"PeriodicalIF":2.1,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142890276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, we have performed quantum mechanical simulations of current flow in double-barrier III-V (GaAs/AlGaAs) nanowire resonant tunneling diodes (RTDs). Our simulations are based on the non-equilibrium Green's function (NEGF) quantum transport formalism implemented within our in-house simulator called NESS (Nano-Electronics Simulation Software). The NEGF formalism allows us to capture the detailed physical picture of quantum mechanical effects such as electrostatic quantum confinement, resonant tunneling of electrons through barriers in such structures and negative differential resistance. Also, by using NESS capabilities, we have simulated RTDs with Random Discrete Dopants (RDDs) as a source of statistical variability in the device. Our work shows that there is a direct correlation between the positions and the numbers of RDDs and main device output characteristics such as resonant-peak voltage and current (V $_text{r}$ and I $_text{r}$ ) variations. Such V $_text{r}$ and I $_text{r}$ variability in RTDs is shown to be independent and yet also correlated. Hence, both parameters can be used together to encode information. This provides the opportunity and possibility for using a single or multiple RTDs as Physical Unclonable Functions (PUFs).
{"title":"Analysis of Random Discrete Dopants Embedded Nanowire Resonant Tunnelling Diodes for Generation of Physically Unclonable Functions","authors":"Pranav Acharya;Ali Rezaei;Amretashis Sengupta;Tapas Dutta;Naveen Kumar;Patryk Maciazek;Asen Asenov;Vihar Georgiev","doi":"10.1109/TNANO.2024.3504963","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3504963","url":null,"abstract":"In this work, we have performed quantum mechanical simulations of current flow in double-barrier III-V (GaAs/AlGaAs) nanowire resonant tunneling diodes (RTDs). Our simulations are based on the non-equilibrium Green's function (NEGF) quantum transport formalism implemented within our in-house simulator called NESS (Nano-Electronics Simulation Software). The NEGF formalism allows us to capture the detailed physical picture of quantum mechanical effects such as electrostatic quantum confinement, resonant tunneling of electrons through barriers in such structures and negative differential resistance. Also, by using NESS capabilities, we have simulated RTDs with Random Discrete Dopants (RDDs) as a source of statistical variability in the device. Our work shows that there is a direct correlation between the positions and the numbers of RDDs and main device output characteristics such as resonant-peak voltage and current (V\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 and I\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000) variations. Such V\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 and I\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 variability in RTDs is shown to be independent and yet also correlated. Hence, both parameters can be used together to encode information. This provides the opportunity and possibility for using a single or multiple RTDs as Physical Unclonable Functions (PUFs).","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"815-821"},"PeriodicalIF":2.1,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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