Ashish Khandelwal, L. S. Sharath Chandra, Shilpam Sharma, A. Sagdeo, Ram Janay Choudhary, M. K. Chattopadhyay
{"title":"Terahertz dielectric properties of Fe3O4 thin films deposited on Si (100) substrate","authors":"Ashish Khandelwal, L. S. Sharath Chandra, Shilpam Sharma, A. Sagdeo, Ram Janay Choudhary, M. K. Chattopadhyay","doi":"10.1088/1361-6641/ad1cca","DOIUrl":null,"url":null,"abstract":"\n Fe3O4 is considered to be a promising material for terahertz spintronic applications as well as for stealth technology. However, the optical properties of Fe3O4 in the thin film form at terahertz frequencies are not reported in literature. In this article, we present the frequency and temperature dependence of dielectric permittivity (ε1) and optical conductivity (σ1) of Fe3O4 films deposited on Si substrate. The σ1 of these films show absorption peaks related to charge localization and shallow impurities. It is also observed that the Fe2O3/Fe3O4 composite films have large σ1 and ε1 indicating their potential use for stealth technology applications. The overall optical properties are found to depend strongly on the microstructure and defects, such as, the grain size and the presence of grain boundaries, anti-phase boundaries, strain disorder due to lattice mismatch and/or the Fe+2/Fe+3 ratio.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"15 4","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad1cca","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Fe3O4 is considered to be a promising material for terahertz spintronic applications as well as for stealth technology. However, the optical properties of Fe3O4 in the thin film form at terahertz frequencies are not reported in literature. In this article, we present the frequency and temperature dependence of dielectric permittivity (ε1) and optical conductivity (σ1) of Fe3O4 films deposited on Si substrate. The σ1 of these films show absorption peaks related to charge localization and shallow impurities. It is also observed that the Fe2O3/Fe3O4 composite films have large σ1 and ε1 indicating their potential use for stealth technology applications. The overall optical properties are found to depend strongly on the microstructure and defects, such as, the grain size and the presence of grain boundaries, anti-phase boundaries, strain disorder due to lattice mismatch and/or the Fe+2/Fe+3 ratio.
期刊介绍：
Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic.
The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including:
fundamental properties
materials and nanostructures
devices and applications
fabrication and processing
new analytical techniques
simulation
emerging fields:
materials and devices for quantum technologies
hybrid structures and devices
2D and topological materials
metamaterials
semiconductors for energy
flexible electronics.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
