Challenges in scaling of IPVD deposited Ta barriers on OSG low-k films: Carbonization of Ta by CHx radicals generated through VUV-induced decomposition of carbon-containing groups

IF 2.9 3区物理与天体物理 Q2 PHYSICS, APPLIED Plasma Processes and Polymers Pub Date : 2024-01-22 DOI:10.1002/ppap.202300206

Alexey N. Ryabinkin, Alexey S. Vishnevskiy, Sergej Naumov, Alexander O. Serov, Konstantin I. Maslakov, Dmitry S. Seregin, Dmitry A. Vorotyntsev, Alexander F. Pal, Tatyana V. Rakhimova, Konstantin A. Vorotilov, Mikhail R. Baklanov

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Abstract

The effect of vacuum ultraviolet (VUV) radiation during ionized physical vapor deposition (IPVD) of tantalum barriers on various porous organosilicate glass low-k SiCOH films is studied using advanced diagnostics and quantum chemical calculations. VUV photons break the Si–C bonds, releasing hydrocarbon radicals from the pore surfaces. These radicals, trapped in pores that are partially sealed by tantalum deposition, can either react with tantalum to form carbide-like compounds, TaC_x, or be redeposited in the pores as CH_x polymers. This is evidenced by a decrease in CH₃ groups that correlates with an increase in TaC_x. The formation of TaC_x poses a significant challenge in the back end of line (BEOL) technology when reducing the barrier thickness.

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在 OSG 低 K 薄膜上扩展 IPVD 沉积 Ta 势垒所面临的挑战：紫外线诱导含碳基团分解产生的 CHx 自由基使 Ta 碳化

利用先进的诊断技术和量子化学计算方法，研究了在各种多孔有机硅玻璃低 K SiCOH 薄膜上进行钽隔阂离子化物理气相沉积（IPVD）过程中真空紫外线（VUV）辐射的影响。紫外光子破坏了 Si-C 键，从孔隙表面释放出碳氢化合物自由基。这些自由基被困在部分被钽沉积密封的孔隙中，既可以与钽反应形成类碳化物 TaCx，也可以作为 CHx 聚合物重新沉积在孔隙中。这表现在 CH3 基团的减少与 TaCx 的增加相关。在减少阻挡层厚度时，TaCx 的形成给后端生产线 (BEOL) 技术带来了巨大挑战。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Plasma Processes and Polymers 物理-高分子科学

CiteScore

6.60

自引率

11.40%

发文量

150

审稿时长

3 months

期刊介绍： Plasma Processes & Polymers focuses on the interdisciplinary field of low temperature plasma science, covering both experimental and theoretical aspects of fundamental and applied research in materials science, physics, chemistry and engineering in the area of plasma sources and plasma-based treatments.