Large-Area Quantum Dot Light-Emitting Diodes Employing Sputtered Zn0.85Mg0.15O Electron Transport Material

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Electronic Materials Letters Pub Date : 2024-01-30 DOI:10.1007/s13391-023-00482-9

Bomi Kim, Jiwan Kim

{"title":"Large-Area Quantum Dot Light-Emitting Diodes Employing Sputtered Zn0.85Mg0.15O Electron Transport Material","authors":"Bomi Kim, Jiwan Kim","doi":"10.1007/s13391-023-00482-9","DOIUrl":null,"url":null,"abstract":"<div><p>We report a large-area quantum dot light-emitting diode (QLED) with sputtered Zn<sub>0.85</sub>Mg<sub>0.15</sub>O (ZMO) as an electron transport layer (ETL). Uniform ZMO is applied as ETL of the inverted structured QLED and the adjustment of Ar/O<sub>2</sub> ratio on device characteristics is studied in detail. Compared to pristine ZMO, ZMOs with O<sub>2</sub> gas are found to be beneficial to the charge balance in the emitting layer of QLEDs mainly by their upshifted conduction band minimum, which in turn limits an electron injection. Additionally, it is found that oxygen vacancies in the ZMO, acting as the exciton quenching sites, are responsible for the device stability. QLEDs with 6:1 ZMO produce a maximum luminance of 136,257 cd/m<sup>2</sup> and external quantum efficiency of 5.15%, which are the best device performances to date among QLEDs with sputtered ETLs. These results indicate that the sputtered ZMO shows great promise for use as an inorganic ETL for future large-area QLEDs.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 2","pages":"140 - 149"},"PeriodicalIF":2.1000,"publicationDate":"2024-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-023-00482-9","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

We report a large-area quantum dot light-emitting diode (QLED) with sputtered Zn_0.85Mg_0.15O (ZMO) as an electron transport layer (ETL). Uniform ZMO is applied as ETL of the inverted structured QLED and the adjustment of Ar/O₂ ratio on device characteristics is studied in detail. Compared to pristine ZMO, ZMOs with O₂ gas are found to be beneficial to the charge balance in the emitting layer of QLEDs mainly by their upshifted conduction band minimum, which in turn limits an electron injection. Additionally, it is found that oxygen vacancies in the ZMO, acting as the exciton quenching sites, are responsible for the device stability. QLEDs with 6:1 ZMO produce a maximum luminance of 136,257 cd/m² and external quantum efficiency of 5.15%, which are the best device performances to date among QLEDs with sputtered ETLs. These results indicate that the sputtered ZMO shows great promise for use as an inorganic ETL for future large-area QLEDs.

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采用溅射 Zn0.85Mg0.15O 电子传输材料的大面积量子点发光二极管

我们报告了一种以溅射 Zn0.85Mg0.15O（ZMO）作为电子传输层（ETL）的大面积量子点发光二极管（QLED）。将均匀的 ZMO 用作倒置结构 QLED 的 ETL，并详细研究了 Ar/O2 比率对器件特性的影响。与原始 ZMO 相比，发现含有氧气的 ZMO 有利于 QLED 发光层中的电荷平衡，主要是因为它们的上移导带最小值反过来限制了电子注入。此外，研究还发现，ZMO 中的氧空位作为激子淬灭位点，对器件的稳定性起着重要作用。采用 6:1 ZMO 的 QLED 产生的最大亮度为 136257 cd/m2，外部量子效率为 5.15%，是迄今为止采用溅射 ETL 的 QLED 中器件性能最好的。这些结果表明，溅射 ZMO 很有希望用作未来大面积 QLED 的无机 ETL。

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来源期刊

Electronic Materials Letters 工程技术-材料科学：综合

CiteScore

4.70

自引率

20.80%

发文量

审稿时长

2.3 months

期刊介绍： Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.