Basic Properties of ZnO, Ga2O3, and MgO—Quantitative IR Studies

Abstract

In our previous study, we elaborated a method of determination of concentrations of the basic sites O2− and OH− in a quantitative IR study of CO2 adsorption. Previous adsorption studies or TPD experiments only provided the total basicity without distinguishing between O2− and OH−. In this study, we determined the concentration of O2− and OH− on ZnO, Ga2O3, and MgO surfaces. The basicity of ZnO and MgO was found to be significantly higher than that of Ga2O3. The surface of ZnO was rich in O2−, the contribution of OH− was very small, and the Ga2O3 surface contained mainly OH−. For MgO, the contribution of O2− and OH− was comparable. According to the IR results, only a small fraction of all surface hydroxyls were sufficiently basic to react with CO2. The partial dehydroxylation changed the proportion of the concentrations of O2− and OH− on the oxides. We also elaborated upon a new method to determine the total concentration of basic sites via CO2 desorption monitored using IR. For all the oxides, we studied the sum of the concentrations of O2− and OH−, as determined in our quantitative IR studies, to find whether they were comparable with the total basicity determined in the desorption experiments.