ACS Applied Electronic Materials最新文献

Introduction: Mentha arvensis L. is the most valuable medicinal plant that possesses anti-inflammatory, hepatoprotective, antimicrobial, and antioxidant properties. There are few studies available in the literature about M. arvensis L nanoparticles, but their nanosuspensions-based information remains unclear and needs further study.

Objective: This study was designed to explore the nanotechnology approach for biochemical characterisation, enhanced bioactivities, and photochemistry of freshly prepared M. arvensis L. nanosuspensions.

Methodology: Nanosuspensions of M. arvensis L. leaves were prepared by following the nanoprecipitation method. In this study, we performed structural and biochemical characterisation through analyses of Fourier-transform infrared (FTIR) spectroscopy, high-performance liquid chromatography (HPLC), phase contrast microscopy and enhanced bioactivities; antioxidant, alpha-amylase inhibition, glycation inhibition and cytotoxicity assays.

Results: FTIR analysis revealed the presence of phenols, amines hydroxyl, carboxylic acid, alkenes, alkenes and alkynes. HPLC analysis revealed the presence of chlorogenic acid, a principal phenolic component. Biofilm inhibition activity revealed that the growth formation of Escherichia coli inhibited up to 62.4% and 53.35% by leaves extract and nanosuspension, respectively. However, the growth of Staphylococcus aureus was not inhibited by nanosuspension and extract. Nanosuspension and extract exhibited 155.92 mg, 108.11 mg gallic acids per 100 g of dry weight total phenolic content and 233.44 mg, 163.933 mg catechin per 100 g of dried weight total flavonoid content in extract and nanosuspension, respectively. Antioxidant activity revealed the scavenging potential of nanosuspensions and extract was 41.01% and 12.07%, respectively. Alpha-amylase inhibiting activity of nanosuspension and extract was 36% and 33%, while, the antiglycation potential of nanosuspension and extract were 41.68% and 35.18%, respectively. Nanosuspensions and extract showed maximum hemolytic activity at 12.91% and 17.18%, respectively.

Conclusion: These cost-effective nanoformulations could serve as a platform for therapeutic purposes in controlling the high risk of infectious diseases and designing efficient plant nanosuspensions by discovering novel bioactive compounds in an adequate manner.

In this report, we show the characteristics of a black phosphorus (BP) dual-gate transistor with top-gate dielectric layer made of Al₂O₃ using exposure mode atomic layer deposition (E-mode ALD). From the electrical and material analysis, we found that this ALD process had an annealing effect on the Germanium (Ge)-BP metal contacts which increased the ON current (I_on) of the back-gate characteristics by 12 times and increased the field-effect hole mobility (μ_p,FE) by 17.9 times. Raman spectroscopy was employed to assess the passivation capability of the Al₂O₃ layer in suppressing BP oxidation under ambient conditions. Furthermore, electrical characterization demonstrated that the Al₂O₃ film grown via this process exhibits high dielectric quality and a low leakage current density of 0.5 pA/μm².

The threshold switching (TS) in amorphous chalcogenides is a critical factor governing the performance of phase-change memory (PCM) and Ovonic Threshold Switching (OTS) selector devices. While its technological relevance is well-established, the dynamics of resistance breakdown during TS, especially its relationship to the atomic-scale network, remains unclear. In this study, we investigate the influence of amorphous network connectivity and rigidity percolation on the TS dynamics of GeTe (rigid) and GeTe₆ (floppy) devices belonging to the binary Ge_xTe_100-x glass system. Time-resolved electrical measurements were performed on the as-deposited amorphous GeTe and GeTe₆-based devices to precisely capture the current evolution from subthreshold to superthreshold regimes. GeTe devices exhibit a relatively longer delay time of ∼14 ns at the threshold voltage (V_T) and require more than 70% overvoltage above V_T to reduce the delay time to an order lower value. In contrast, GeTe₆ devices switch significantly faster within a relatively shorter delay time of ∼2.6 ns at V_T and the delay time reduced to ∼800 ps within a minimal overvoltage of 26% above V_T. The voltage-dependent delay time characteristics validate a significantly sharper exponential reduction in the delay time for GeTe₆ compared to GeTe devices. Confocal Raman spectroscopic measurements were carried out on GeTe and GeTe₆ thin films, validating the role of Te–Te network connectivity in shaping the vibrational landscape and rigidity of the amorphous Ge_xTe_100-x glass systems. Together, these findings corroborate the floppy (GeTe₆) network that possesses longer Te–Te linkages, promoting higher transient phonon interactions and governing subnanosecond TS for a lower applied voltage above V_T. On the other hand, rigid (GeTe) networks dominated by Ge–Te bonding with damped Te–Te vibrational modes exhibit a delayed TS process. These results elucidate the influence of the network connectivity and its impact on local phonons in enabling extraordinarily faster TS in chalcogenide-based OTS selectors (GeTe₆) and PCM (GeTe) devices.

We introduce an innovative graphene-based architecture to control electronic current flows. The tunable dot platform (TDP) consists of an array of gated dots, with independently adjustable potentials, embedded in graphene. Inspired by Mie theory, and leveraging multiscattering effects, we demonstrate that tailored current behavior can be achieved due to the variety of possible dot configurations. Optimization is performed using differential evolution, which identifies configurations that maximize specific objectives, such as directing or splitting an electron beam by tuning the angular dependence of scattering. Our results demonstrate the potential of the TDP to provide precise control over induced current flows in graphene, making it a promising component for next-generation electronic and electron optic devices.

Flexible broadband photodetectors are crucial for the next generation of wearable and energy-efficient optoelectronic devices. These devices can facilitate applications in real-time health monitoring, environmental sensing, optical communication, and more. We fabricated a β-Ga₂O₃-based flexible self-powered photodetector on a mica substrate using a sputtering technique in this study. The device demonstrated a responsivity of 534 mA/W at 266 nm under 0 V applied bias. To broaden the operational wavelength range and enhance the sensitivity, we functionalized the β-Ga₂O₃ film with gold nanoparticles (Au-NPs) utilizing the localized surface plasmon resonance effect of these nanoparticles. The functionalization significantly enhanced the photocurrent and extended the device’s response from deep-ultraviolet (UVC) to near-infrared (NIR) regions. The device with the Au-NPs functionalization demonstrated a >230% increase in responsivity, rising from 534 to 1241 mA/W at 266 nm. At an applied bias of 5 V, the functionalized device demonstrates impressive performance metrics: a high detectivity of 1.19 × 10¹³ Jones, an ultrahigh responsivity of 7.8 × 10⁴ mA/W, and a low noise-equivalent power of 4.11 × 10^–15 W Hz^–1/2 for 266 nm light illumination. Furthermore, after 200 bending cycles, the flexible device retains 95% of its original photocurrent, showcasing its exceptional mechanical robustness. These advancements address the critical demand for flexible, broadband photodetectors and open avenues for wearable optoelectronic devices.

Synthetic antiferromagnets (SAFs) are pivotal for high-density spintronic applications, prized for their ultrafast dynamics and negligible stray fields. However, the deterministic control and reversible interconversion among multiple distinct domain states within a single SAF system remains a challenge. Here, we demonstrate the programmable formation and transformation of a rich portfolio of magnetic domain configurations in a perpendicularly magnetized Ta/[Pt/Co]₃/Ru/[Co/Pt]₃/Ta multilayer. While sweeping an external magnetic field can stabilize various states, including single-layer ferromagnetic (FM) skyrmion bubbles and SAF skyrmion bubbles, it is insufficient to achieve a pure, uniformly magnetized antiparallel SAF state. By synergistically applying magnetic fields and current pulses, we achieve comprehensive control: (i) reversible switching between SAF skyrmion bubbles and a pure antiparallel SAF state with controlled polarity, (ii) interconversion between SAF and FM skyrmion bubbles, and (iii) transformation between two polarization variants of SAF skyrmion bubbles. Furthermore, current pulses facilitate the transition to a saturated state at a significantly reduced magnetic field. This comprehensive toolkit for domain state manipulation establishes a robust pathway toward developing reconfigurable multistate magnetic memory and logic devices.

This work investigates the effect of the dispersion of lab-synthesized magnesium sulfide (MgS) nanoparticles on the ion transport behavior within a magnesium-ion-conducting gel polymer electrolyte (GPE) system. Each electrolyte specimen contains poly(methyl methacrylate), i.e., PMMA polymer; magnesium perchlorate, i.e., Mg(ClO₄)₂ salt; and ethylene carbonate/propylene carbonate, i.e., EC/PC as the binary solvent. Electrochemical impedance spectroscopy revealed a significant enhancement in the ionic conductivity for the optimized GPE composition. The optimized electrolyte membrane, loaded with 3.75 wt % MgS nanoparticles, accomplishes a significantly higher ionic conductivity of 1.5 × 10^–3 S cm^–1 at 35 °C. The X-ray diffraction investigation reveals decreases in the degree of crystallinity, signifying the improved amorphous nature of the electrolyte, which is favorable for ionic transport. Adding the MgS nanoparticles in an optimized quantity elevates the entropy of the GPE, further promoting the amorphous nature for the fabricated electrolyte. The potential conformational and structural changes on adding MgS nanoparticles in the PMMA/EC-PC/Mg(ClO₄)₂ matrix have been established using Fourier transform infrared (FTIR) spectroscopy. The reported electrolyte system designed using MgS nanoparticles has the potential to provide good ionic conductivity, an electrochemical stability window, and superior structural properties.

Nowadays, silicon-based field-effect transistors (FETs) are approaching the physical limits, while two-dimensional (2D) materials have emerged as promising channel material candidates to overcome these limitations owing to their natural atomic thickness, smooth surface, and superior gate control ability. Here, we investigate the electronic properties of monolayer (ML) MoSi₂N₄ and the transport properties of ML MoSi₂N₄ n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) using density functional theory (DFT) combined with the nonequilibrium Green’s function (NEGF) formalism. The ML MoSi₂N₄ has an indirect band gap of 1.74 eV and a small electron effective mass. For high-performance (HP) applications, the MoSi₂N₄ FETs with 5, 6, and 7 nm gate length (L_g) all meet the International Technology Roadmap for Semiconductors (ITRS) requirements. Notably, the 5 nm L_g MoSi₂N₄ FETs exhibit a high on-state current of 1846 μA/μm. For low-power (LP) applications, both the 6 and 7 nm L_g MoSi₂N₄ FETs exhibit an on/off ratio exceeding 10⁷, while the 7 nm L_g MoSi₂N₄ FETs achieve a low subthreshold swing (SS) of 53 mV/dec, which is below the room-temperature Boltzmann limit. Through underlap structure, the 2 nm L_g MoSi₂N₄ FETs can meet the ITRS requirements for both HP and LP applications. Furthermore, compared to other 2D FETs, the MoSi₂N₄ FETs demonstrate competitive advantages in terms of energy-delay product (EDP). At last, we design and simulate pseudo-CMOS logic gate circuits based on ML MoSi₂N₄ n-type MOSFETs. Our study indicates that ML MoSi₂N₄ is a promising channel material for FETs in the postsilicon era.

Defects introduced by plasma activation in amorphous SiO₂ were probed by a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured as a function of the incident positron energy for SiO₂ deposited from tetraethylorthosilicate using plasma-enhanced chemical vapor deposition on Si substrates. After N₂ plasma activation, electron (and/or positron) trapping centers were primarily introduced in the subsurface region (≤6 nm). The defect concentration decreased after postplasma processes: deionized water rinsing and additional H₂O plasma activation, which was associated with the formation of silanol groups at the surface. However, a certain number of defects existed in the subsurface region, and they were not annealed out at the typical annealing temperature for bonding SiO₂ layers (400 °C). Because these defects can cause softening of the top surface region and attract water trapped between two wafers or in SiO₂, they are considered to contribute to the wafer-bonding process.

Ubiquitous sensing devices across multiple application domains continuously gather, consume, accumulate and transfer a massive volume of information, which needs to be safeguarded against malicious attackers. To this end, security measures need to be integrated into sensing devices. One of the ways to achieve this is to leverage the inherent variability between sensors induced during the manufacturing process which can be used to generate unique and unpredictable input and output combinations. Based on this premise, a single-device optical physically unclonable function (PUF) built from halide perovskite photovoltaics based on methylammonium bromide has been introduced. The photovoltaic architecture and superior light sensitivity offer a unique approach for a self-powered in-sensor PUF. Owing to the complex interplay of ionic and electronic processes in halide perovskites and manufacturing variations, each device responds uniquely, but reproducibly, to varying optical inputs. As a result, each device provides multiple untraceable encryption keys to implement a single device multibit PUF. The PUF shows a good uniformity of 46.52% and a notable peak around 50% for bit-aliasing frequency. It also shows remarkable reliability, as indicated by a minimal coefficient of variance of 1–2% in open-circuit voltage across 10⁵ cycles. We also propose a strong PUF construction by integrating four independent weak PUFs, which exponentially increases the challenge-response pair space to 2¹⁶. This research lays the groundwork for the development of highly reliable multibit optical PUFs, which can be useful for advanced product verification and antitheft purposes.