{"title":"A Study on the Large AMOLED Display Backplane-Less Mask Process","authors":"in young Chung, Guanghai Kim, Hyunsik Yoon","doi":"10.1149/2162-8777/ad1f90","DOIUrl":null,"url":null,"abstract":"\n In this work, the large AMOLED Display Backplane LTPS 5Mask PA method was studied. A storage cap was formed by doping boron on the poly Si under the GI cap in the contact hole process without using a storage cap doping mask. In the contact hole process, half-tone PR was used to simultaneously perform cap doping and TFT source drain open. Because half-tone PR must remain uniform to protect the cap lead-in end with GI uniformly within 8G Glass, photolithography PR process conditions with good half-tone uniformity were set up.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Journal of Solid State Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2162-8777/ad1f90","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, the large AMOLED Display Backplane LTPS 5Mask PA method was studied. A storage cap was formed by doping boron on the poly Si under the GI cap in the contact hole process without using a storage cap doping mask. In the contact hole process, half-tone PR was used to simultaneously perform cap doping and TFT source drain open. Because half-tone PR must remain uniform to protect the cap lead-in end with GI uniformly within 8G Glass, photolithography PR process conditions with good half-tone uniformity were set up.