Pub Date : 2024-08-09DOI: 10.1149/2162-8777/ad6d8b
Venkata Murali Mohan S, Bharath P., Ramanjaneyulu E., Ramachandran D
The sol-gel technique has been used to synthesize rare earth orthoferrite NdFeO_3 nanopowders. The present investigation examines how calcination temperatures affect the structural, morphological, and magnetic properties of NdFeO3 orthoferrites. X-ray diffraction studies indicate that there is no discernible difference in the observed structures with calcination temperatures other than the bond distances and bond angles. The surface morphology and field-emission scanning electron microscopy indicate that porosity of the samples is regulated by the physical shape of the tiny particles within them. Porosity is minimized as calcination temperature increases, showing a higher density that contributes to reducing leakage current features while improving the break-down strength. These variations are attributed to bond length and bond angle variation of the Fe-O. The photocatalytic activity of the NdFeO3 nonoparticles was assessed by photodegrading a number of organic dyes, including methyl orange (MO), rhodamine B (RhB), and methylene blue (MB). The product displays significant photocatalytic degradation of the dyes whenever exposed to visible light. Overall, this investigation aims to establish a relationship between the physical properties and microstructural parameters to provide valuable insights into the magnetic interactions present in the samples and the comprehensive behavior of NdFeO3 orthoferrites samples calcination at different calcination temperatures.
{"title":"Effect of Calcination Temperature on the Structural, Morphological, and Magnetic Properties of Rare-Earth Orthoferrite NdFeO3 Nanoparticles Synthesized by the Sol-Gel Method","authors":"Venkata Murali Mohan S, Bharath P., Ramanjaneyulu E., Ramachandran D","doi":"10.1149/2162-8777/ad6d8b","DOIUrl":"https://doi.org/10.1149/2162-8777/ad6d8b","url":null,"abstract":"\u0000 The sol-gel technique has been used to synthesize rare earth orthoferrite NdFeO_3 nanopowders. The present investigation examines how calcination temperatures affect the structural, morphological, and magnetic properties of NdFeO3 orthoferrites. X-ray diffraction studies indicate that there is no discernible difference in the observed structures with calcination temperatures other than the bond distances and bond angles. The surface morphology and field-emission scanning electron microscopy indicate that porosity of the samples is regulated by the physical shape of the tiny particles within them. Porosity is minimized as calcination temperature increases, showing a higher density that contributes to reducing leakage current features while improving the break-down strength. These variations are attributed to bond length and bond angle variation of the Fe-O. The photocatalytic activity of the NdFeO3 nonoparticles was assessed by photodegrading a number of organic dyes, including methyl orange (MO), rhodamine B (RhB), and methylene blue (MB). The product displays significant photocatalytic degradation of the dyes whenever exposed to visible light. Overall, this investigation aims to establish a relationship between the physical properties and microstructural parameters to provide valuable insights into the magnetic interactions present in the samples and the comprehensive behavior of NdFeO3 orthoferrites samples calcination at different calcination temperatures.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141922615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-26DOI: 10.1149/2162-8777/ad6808
Yuhang Liu, M. Ruan, Shanshan Nie, Yi Lian, Lei Zhao, Zhifeng Liu
In electrochromic devices, the electrolyte layer is not only an electrode conduction medium but also provides compensation ions for electrochromics. Here, three kinds of composite electrolytes, PMMA/SiO2, PMMA/TiO2, and PMMA/SiO2/TiO2, were prepared and assembled with poly(methyl methacrylate) (PMMA) as polymer matrix and doped with inorganic particles of silicon dioxide (SiO2) and titanium dioxide (TiO2), to study the effect of doping two kinds of inorganic electrolyte particles on the performance of electrochromic devices. The optical contrast and cycling stability of the electrochromic devices assembled with PMMA/SiO2/TiO2 composite electrolytes were significantly improved compared with devices composed of the other three electrolytes. Cyclic voltammetry analysis showed that the lithium ion diffusion coefficient of the electrochromic device with PMMA/SiO2/TiO2 composite electrolyte composite electrolyte was the largest at 2.5×10-14 cm2/s. Enhancement of the electrochromic performance is mainly due to the fact that the work function difference between SiO2 and TiO2 in the figure of merit will lead to the directional movement of charge, accelerating the Li+ transport rate and further optimizing the electrochemical performance of the composite electrolyte. This study provides an effective method to improve the performance of electrochromic devices.
{"title":"Study of Two Inorganic Particles in PMMA Electrochromic Devices Based on the Difference of Work Function","authors":"Yuhang Liu, M. Ruan, Shanshan Nie, Yi Lian, Lei Zhao, Zhifeng Liu","doi":"10.1149/2162-8777/ad6808","DOIUrl":"https://doi.org/10.1149/2162-8777/ad6808","url":null,"abstract":"\u0000 In electrochromic devices, the electrolyte layer is not only an electrode conduction medium but also provides compensation ions for electrochromics. Here, three kinds of composite electrolytes, PMMA/SiO2, PMMA/TiO2, and PMMA/SiO2/TiO2, were prepared and assembled with poly(methyl methacrylate) (PMMA) as polymer matrix and doped with inorganic particles of silicon dioxide (SiO2) and titanium dioxide (TiO2), to study the effect of doping two kinds of inorganic electrolyte particles on the performance of electrochromic devices. The optical contrast and cycling stability of the electrochromic devices assembled with PMMA/SiO2/TiO2 composite electrolytes were significantly improved compared with devices composed of the other three electrolytes. Cyclic voltammetry analysis showed that the lithium ion diffusion coefficient of the electrochromic device with PMMA/SiO2/TiO2 composite electrolyte composite electrolyte was the largest at 2.5×10-14 cm2/s. Enhancement of the electrochromic performance is mainly due to the fact that the work function difference between SiO2 and TiO2 in the figure of merit will lead to the directional movement of charge, accelerating the Li+ transport rate and further optimizing the electrochemical performance of the composite electrolyte. This study provides an effective method to improve the performance of electrochromic devices.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141801505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-26DOI: 10.1149/2162-8777/ad6807
Di Shao, Liping Lu, Haiying Sun, Z. Bai
The phase analysis, luminous intensity, and luminescence lifetime of different doping concentrations of Tb3+ (1 mol % - 11 mol %), Yb3+ (9 mol % - 54 mol %), Er3+ (0.1 mol % - 1.1 mol %) ions and different introduction concentrations of Y3+ (1 mol % - 6 mol %) and Lu3+ (0.5 mol % - 3 mol %) of Gd2O2S series phosphors were studied systematically. In addition, the energy transfer model of Tb3+-Yb3+-Er3+ was established by analyzing the changes of luminous intensity and luminescence lifetime of novel (Gd, Y, Lu)2O2S phosphors co-doped Tb3+, Yb3+ and Er3+ which were prepared by the coprecipitation-high temperature solid-state reaction method., The luminescence intensity ratio equations of the sample excited by 980 nm was obtained at 313-553 K. And the absolute sensitivities were 0.0033 (313 K). This work is of reference value to the study of the mechanism of up-conversion system.
{"title":"Up-Conversion Luminescence and Optical Temperature Sensing of Tb3+, Yb3+, Er3+ Doped (Gd, Y, Lu)2O2S Series Phosphors","authors":"Di Shao, Liping Lu, Haiying Sun, Z. Bai","doi":"10.1149/2162-8777/ad6807","DOIUrl":"https://doi.org/10.1149/2162-8777/ad6807","url":null,"abstract":"\u0000 The phase analysis, luminous intensity, and luminescence lifetime of different doping concentrations of Tb3+ (1 mol % - 11 mol %), Yb3+ (9 mol % - 54 mol %), Er3+ (0.1 mol % - 1.1 mol %) ions and different introduction concentrations of Y3+ (1 mol % - 6 mol %) and Lu3+ (0.5 mol % - 3 mol %) of Gd2O2S series phosphors were studied systematically. In addition, the energy transfer model of Tb3+-Yb3+-Er3+ was established by analyzing the changes of luminous intensity and luminescence lifetime of novel (Gd, Y, Lu)2O2S phosphors co-doped Tb3+, Yb3+ and Er3+ which were prepared by the coprecipitation-high temperature solid-state reaction method., The luminescence intensity ratio equations of the sample excited by 980 nm was obtained at 313-553 K. And the absolute sensitivities were 0.0033 (313 K). This work is of reference value to the study of the mechanism of up-conversion system.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141801296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-25DOI: 10.1149/2162-8777/ad6790
Z. Fadil, C. Raorane, D. Kabouchi, R. El Fdil, Abdulrahman A. Alsayyari, S. Saadaoui, S. Kim, A. Mhirech, E. Salmani
This study explores the magnetic properties of Borospherene-like and Buckminsterfullerene-like lattices using Monte Carlo simulation, revealing novel behaviors. The dependency of blocking temperature (TB) on external magnetic field strength (H), linear coupling interaction (J), and biquadratic coupling interaction (K) was studied and compared between the two lattice types. Additionally, the evolution of coercive field (HC) with J and K parameters for both lattice types was analyzed. This study highlights the unique magnetic responses of these lattices and their potential applications in magnetic research and nanotechnology.
本研究利用蒙特卡洛模拟探索了类鲍罗圈烯晶格和类巴克明斯特富勒烯晶格的磁特性，揭示了它们的新行为。研究了阻塞温度（TB）对外部磁场强度（H）、线性耦合作用（J）和双四耦合作用（K）的依赖性，并对两种晶格类型进行了比较。此外，还分析了两种晶格类型的矫顽力场（HC）随 J 和 K 参数的变化情况。这项研究强调了这些晶格独特的磁响应及其在磁研究和纳米技术中的潜在应用。
{"title":"Exploring Magnetic Attributes: Borospherene-Like and Buckminsterfullerene-Like Lattices in Monte Carlo Simulations","authors":"Z. Fadil, C. Raorane, D. Kabouchi, R. El Fdil, Abdulrahman A. Alsayyari, S. Saadaoui, S. Kim, A. Mhirech, E. Salmani","doi":"10.1149/2162-8777/ad6790","DOIUrl":"https://doi.org/10.1149/2162-8777/ad6790","url":null,"abstract":"\u0000 This study explores the magnetic properties of Borospherene-like and Buckminsterfullerene-like lattices using Monte Carlo simulation, revealing novel behaviors. The dependency of blocking temperature (TB) on external magnetic field strength (H), linear coupling interaction (J), and biquadratic coupling interaction (K) was studied and compared between the two lattice types. Additionally, the evolution of coercive field (HC) with J and K parameters for both lattice types was analyzed. This study highlights the unique magnetic responses of these lattices and their potential applications in magnetic research and nanotechnology.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141803523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-25DOI: 10.1149/2162-8777/ad6792
M. Waris, Muhammad Azhar Mumtaz, Amir Afzal, Sohail Mumtaz, Nimra Muzaffar, Waqas Iqbal, Areej S. Alqarni
Here, we synthesized a nanocomposite electrode material for high-performance asymmetric supercapacitor devices (ASCD) made of bismuth ferrite (BFO) nanocomposite and nickel cobalt sulfide with carbon nanotubes (NiCoS@CNT). To fabricate the BFO@NiCoS@CNT nanocomposite, a simple hydrothermal process was used. Electrochemical impedance spectroscopy, galvanostatic charge/discharge measurements, and cyclic voltammetry were used to evaluate the electrochemical experiments. At a scan speed of 5 mVs-1, the BFO@NiCoS@CNT nanocomposite exhibited a specific capacitance of 2890 Fg-1, surpassing pure BFO@NiCoS. Furthermore, the nanocomposite displayed excellent cyclic stability, retaining around 87.8% of its capacity retention even after 5000 cycles. Another notable property is its energy density (Ed) of 71 Whkg-1 at the power density (Pd) of 2400 Wkg-1. Based on these promising findings, BFO@NiCoS@CNT nanocomposite might be used to fabricate electrodes for high-performance hybrid supercapacitors. Our research indicates that this is the first report of a BFO@NiCoS@CNT nanocomposite used as an asymmetric supercapacitor.
{"title":"Synergistic Effects in BFO@NiCoS@CNT//AC Nanocomposite for High-Capacity Energy Storage Systems","authors":"M. Waris, Muhammad Azhar Mumtaz, Amir Afzal, Sohail Mumtaz, Nimra Muzaffar, Waqas Iqbal, Areej S. Alqarni","doi":"10.1149/2162-8777/ad6792","DOIUrl":"https://doi.org/10.1149/2162-8777/ad6792","url":null,"abstract":"\u0000 Here, we synthesized a nanocomposite electrode material for high-performance asymmetric supercapacitor devices (ASCD) made of bismuth ferrite (BFO) nanocomposite and nickel cobalt sulfide with carbon nanotubes (NiCoS@CNT). To fabricate the BFO@NiCoS@CNT nanocomposite, a simple hydrothermal process was used. Electrochemical impedance spectroscopy, galvanostatic charge/discharge measurements, and cyclic voltammetry were used to evaluate the electrochemical experiments. At a scan speed of 5 mVs-1, the BFO@NiCoS@CNT nanocomposite exhibited a specific capacitance of 2890 Fg-1, surpassing pure BFO@NiCoS. Furthermore, the nanocomposite displayed excellent cyclic stability, retaining around 87.8% of its capacity retention even after 5000 cycles. Another notable property is its energy density (Ed) of 71 Whkg-1 at the power density (Pd) of 2400 Wkg-1. Based on these promising findings, BFO@NiCoS@CNT nanocomposite might be used to fabricate electrodes for high-performance hybrid supercapacitors. Our research indicates that this is the first report of a BFO@NiCoS@CNT nanocomposite used as an asymmetric supercapacitor.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141804601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-25DOI: 10.1149/2162-8777/ad6791
P. N, Siddeshwar M, Naveen P, Srinivas K, Nehru Boda, Kanchana Latha Chittury
In this work, the context is doped Rare earth elements on the structural, optical and magnetic properties of the cobalt ferrite nanoparticles using sol-gel synthesis by calcinating at 500oC for 4 hours in air. Rietveld assessment of XRD data validated the formation of a single phase cubic spinal configuration for all formations coupled with magnetic properties and were investigated. SEM has been used to study the surface morphology of the compounds. FTIR and Raman spectra confirmed the structure with the appearance of standard modes. The Rare Earth replacement in CoFe2O4 ferrites has intense impact on magnetic properties. Hysteresis loops showed the saturation magnetisation values were increased/decreased from 55emu/gm to 25 emu/gm by inserting the Rare Earth (RE) material in the Rare Earth CoFe2O4 ferrite samples. Magnetic hysteresis data show that the coercive force is depleted with change in Zr, Sm Gd composition but the net magnetisation of the samples are not interrelated with dopant level.
{"title":"Effect of Zr, Sm and Gd Doped CoFe2O4 on Structural, Spectral and Magnetic Properties","authors":"P. N, Siddeshwar M, Naveen P, Srinivas K, Nehru Boda, Kanchana Latha Chittury","doi":"10.1149/2162-8777/ad6791","DOIUrl":"https://doi.org/10.1149/2162-8777/ad6791","url":null,"abstract":"\u0000 In this work, the context is doped Rare earth elements on the structural, optical and magnetic properties of the cobalt ferrite nanoparticles using sol-gel synthesis by calcinating at 500oC for 4 hours in air. Rietveld assessment of XRD data validated the formation of a single phase cubic spinal configuration for all formations coupled with magnetic properties and were investigated. SEM has been used to study the surface morphology of the compounds. FTIR and Raman spectra confirmed the structure with the appearance of standard modes. The Rare Earth replacement in CoFe2O4 ferrites has intense impact on magnetic properties. Hysteresis loops showed the saturation magnetisation values were increased/decreased from 55emu/gm to 25 emu/gm by inserting the Rare Earth (RE) material in the Rare Earth CoFe2O4 ferrite samples. Magnetic hysteresis data show that the coercive force is depleted with change in Zr, Sm Gd composition but the net magnetisation of the samples are not interrelated with dopant level.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141802264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-24DOI: 10.1149/2162-8777/ad670c
Chaoran Yang, Junjie Li, Enxu Liu, Na Zhou, Longrui Xia, Chenchen Zhang, Z. Kong, Jianfeng Gao, Rui Chen, Hua Shao, Tao Yang, Junfeng Li, Jun Luo, Wenwu Wang
Gate-All-Around(GAA) transistor is the most competitive device for the replacement of Fin Field-Effect Transistor (FinFET). Integrating the inner spacer module into process flow of manufacturing GAA devices still faces significant challenges.In this study, dummy gates were included and the most critical processes for inner spacer, such as cavity etching, dielectric material conformal filling and precise etching back process were studied.The inner spacer cavity with a depth of 10.10 nm was achieved using isotropic etching, and dielectric filling was completed by low pressure chemical deposition (LPCVD).Finally, an inner spacer with 9.35 nm thickness is formed after precise etching the dielectric material. Furthermore，to verify the physical isolation of the inner spacer, a selective epitaxy was developed on the Source/Drain region, achieving better process results. This research will provide important references for the industry to manufacture GAA devices, especially inner spacers.
{"title":"Study of Inner Spacer Module Process for Gate All Around Field Effect Transsistors","authors":"Chaoran Yang, Junjie Li, Enxu Liu, Na Zhou, Longrui Xia, Chenchen Zhang, Z. Kong, Jianfeng Gao, Rui Chen, Hua Shao, Tao Yang, Junfeng Li, Jun Luo, Wenwu Wang","doi":"10.1149/2162-8777/ad670c","DOIUrl":"https://doi.org/10.1149/2162-8777/ad670c","url":null,"abstract":"\u0000 Gate-All-Around(GAA) transistor is the most competitive device for the replacement of Fin Field-Effect Transistor (FinFET). Integrating the inner spacer module into process flow of manufacturing GAA devices still faces significant challenges.In this study, dummy gates were included and the most critical processes for inner spacer, such as cavity etching, dielectric material conformal filling and precise etching back process were studied.The inner spacer cavity with a depth of 10.10 nm was achieved using isotropic etching, and dielectric filling was completed by low pressure chemical deposition (LPCVD).Finally, an inner spacer with 9.35 nm thickness is formed after precise etching the dielectric material. Furthermore，to verify the physical isolation of the inner spacer, a selective epitaxy was developed on the Source/Drain region, achieving better process results. This research will provide important references for the industry to manufacture GAA devices, especially inner spacers.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141809503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-24DOI: 10.1149/2162-8777/ad670e
Ahmed Hussein, Hasanian Azeez, Roaa A. Abdalrahman, Mukhlis M Ismail, Sadeq H. Lafta
We investigated the impact of doping ion type on the performance of a ZnO-based ammonia gas sensor to show the capability of these ions to achieve high-performance gas sensing at room temperature. A sol-gel method was used to synthesize both doped and undoped ZnO nanostructures, while the gas sensor device was made by casting ZnO onto a glass substrate for uniform thin film. Then Al electrodes were attached to the film. The characterization was carried out via field-emission scanning electron microscopy, energy-dispersive spectroscopy, X-ray diffraction, UV-VIS, Pl luminescence, Brunnauer-Emmett-Teller, I-V characteristic, and gas sensor setup device. PL measurement shows an increase in green emission spectra with Ba ion shifting the peaks from VO to VO+ and VO+ to VO++ states. The gas sensor test conducted at room temperature shows great enhancement in performance for certain ions. The Ba ions greatly influence gas sensor performance, increasing the response to 24 compared to 5 for undoped ZnO. The room-temperature enhancement achieved by the Ba ions could open the way to investigate more effective dopants for NH3 gas sensors.
{"title":"Study the Effect of Ion Doping on ZnO Nanostructures for Room Temperature NH3 Gas Sensor","authors":"Ahmed Hussein, Hasanian Azeez, Roaa A. Abdalrahman, Mukhlis M Ismail, Sadeq H. Lafta","doi":"10.1149/2162-8777/ad670e","DOIUrl":"https://doi.org/10.1149/2162-8777/ad670e","url":null,"abstract":"\u0000 We investigated the impact of doping ion type on the performance of a ZnO-based ammonia gas sensor to show the capability of these ions to achieve high-performance gas sensing at room temperature. A sol-gel method was used to synthesize both doped and undoped ZnO nanostructures, while the gas sensor device was made by casting ZnO onto a glass substrate for uniform thin film. Then Al electrodes were attached to the film. The characterization was carried out via field-emission scanning electron microscopy, energy-dispersive spectroscopy, X-ray diffraction, UV-VIS, Pl luminescence, Brunnauer-Emmett-Teller, I-V characteristic, and gas sensor setup device. PL measurement shows an increase in green emission spectra with Ba ion shifting the peaks from VO to VO+ and VO+ to VO++ states. The gas sensor test conducted at room temperature shows great enhancement in performance for certain ions. The Ba ions greatly influence gas sensor performance, increasing the response to 24 compared to 5 for undoped ZnO. The room-temperature enhancement achieved by the Ba ions could open the way to investigate more effective dopants for NH3 gas sensors.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141808492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-24DOI: 10.1149/2162-8777/ad670d
G. Kissinger, D. Kot, A. Sattler
We used the method of Torigoe and Ono [J. Appl. Phys., 121, 215103 (2017)] to investigate the kinetics of β, the number of self-interstitials emitted per precipitated oxygen atom, during oxide precipitation in Czochralski silicon. For this purpose, we used pp- epitaxial wafers with a buried highly B-doped epitaxial layer which were annealed with and without thermal pre-treatments at 950°C. From the results we conclude that in the initial phase of oxide precipitation without thermal pre-treatment β is very high before it drops to low values. With a thermal pre-treatment at 800°C for 2 h, the initial value of β is somewhat lower before the drop also occurs. If a nucleation anneal is carried out before the thermal treatment at 950°C the β values are low from the beginning. All of these results confirm our previously published theoretical predictions experimentally. This work also shows that the crystal pulling process can affect the initial β value because grown-in oxide precipitate nuclei can reduce their strain by vacancy absorption. Therefore, high vacancy supersaturation during crystal cooling while oxide precipitate nucleate would lead to somewhat lower initial β values.
{"title":"Experimental Determination of Si Self-Interstitial Emission During Oxide Precipitation in Czochralski Silicon","authors":"G. Kissinger, D. Kot, A. Sattler","doi":"10.1149/2162-8777/ad670d","DOIUrl":"https://doi.org/10.1149/2162-8777/ad670d","url":null,"abstract":"\u0000 We used the method of Torigoe and Ono [J. Appl. Phys., 121, 215103 (2017)] to investigate the kinetics of β, the number of self-interstitials emitted per precipitated oxygen atom, during oxide precipitation in Czochralski silicon. For this purpose, we used pp- epitaxial wafers with a buried highly B-doped epitaxial layer which were annealed with and without thermal pre-treatments at 950°C. From the results we conclude that in the initial phase of oxide precipitation without thermal pre-treatment β is very high before it drops to low values. With a thermal pre-treatment at 800°C for 2 h, the initial value of β is somewhat lower before the drop also occurs. If a nucleation anneal is carried out before the thermal treatment at 950°C the β values are low from the beginning. All of these results confirm our previously published theoretical predictions experimentally. This work also shows that the crystal pulling process can affect the initial β value because grown-in oxide precipitate nuclei can reduce their strain by vacancy absorption. Therefore, high vacancy supersaturation during crystal cooling while oxide precipitate nucleate would lead to somewhat lower initial β values.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141806668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-22DOI: 10.1149/2162-8777/ad6639
Ayşe V. Hacinecipoğlu, Özge Demir, Metin Gençten, Y. Şahin
Molybdenum disulfide (MoS2)-based two-dimensional materials were produced in one-step at room temperature using cyclic voltammetry technique. These materials were then used as electrode materials in supercapacitors. Concentration of supporting electrolyte, precursor, and cycle number parameters, which were the factors affecting the success of the synthesis, were optimized as 0.5 M, 0.15 M,and 10 cycles, respectively. The produced MoS2-coated electrodes were characterized using spectroscopic and microscopic methods. The chemical characterizations of the produced materials were examined by X-ray photoelectron spectroscopy, X-ray diffraction diffractometry, and scanning electron microscopy-energy-dispersive X-ray analysis. Surface morphologies of the composite materials were investigated using scanning electron microscopy. Finally, the produced MoS2-based materials were used as electrode materials in supercapacitors. The produced supercapacitors were characterized using cyclic voltammetry and electrochemical impedance spectroscopy methods, and the changes in the capacitive behavior of these systems over cycles were investigated using the cyclic charge-discharge technique. The highest areal capacitance value was determined as 251 mF.cm-2 at 0.2 mA.cm-2 charge-discharge current rates in 1.0 M H2SO4 by using of MoS-AD1 as the electrode material. Capacitance retention of this electrode was over 100% after 4000 cycles.
利用循环伏安法技术，在室温下一步法制备了基于二硫化钼（MoS2）的二维材料。这些材料随后被用作超级电容器的电极材料。影响合成成功与否的因素包括支持电解质的浓度、前驱体和循环次数参数，这些参数分别优化为 0.5 M、0.15 M 和 10 个循环。利用光谱和显微镜方法对制备的 MoS2 涂层电极进行了表征。利用 X 射线光电子能谱、X 射线衍射衍射仪和扫描电子显微镜-能量色散 X 射线分析法检测了所制材料的化学特性。使用扫描电子显微镜研究了复合材料的表面形态。最后，将制备的基于 MoS2 的材料用作超级电容器的电极材料。使用循环伏安法和电化学阻抗光谱法对制备的超级电容器进行了表征，并使用循环充放电技术研究了这些系统在循环过程中的电容行为变化。使用 MoS-AD1 作为电极材料，在 1.0 M H2SO4 中以 0.2 mA.cm-2 的充放电电流速率充放电时，测定的最高等面积电容值为 251 mF.cm-2。经过 4000 次循环后，该电极的电容保持率超过 100%。
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