Realization of controllable multifunctionality by interfacial engineering: The case of silicene/hBN van der Waals heterostructure

M. Younis, M. Yousaf, Toheed Akhter, Mubashar Ali, Junaid Munir
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Abstract

The study demonstrates layer-sliding-mediated controlled interfacial engineering to induce multifunctionality into a van der Waals heterostructure (vdWHS), consisting of two-dimensional (2D) silicene and hexagonal boron nitride (hBN). To manifest the aforementioned strategy, silicene is slided over hBN, and the resulting variations in the physical properties such as interfacial electronic and optical properties of vdWHS are analyzed. A nifty modeling of vdWHS, not only identifies the most stable stacking pattern but also minimizes the lattice mismatch between silicene and hBN to 2.97%. After obtaining the most optimal stacking configuration of vdWHS, the position of potassium (K) intercalant at the interface is screened out. Various physical parameters such as binding energy, vdW-gap and buckling distance (ΔZ) relating to the intercalated system are computed repeatedly along the sliding pathway. The stability of the various K-intercalated stacking patterns is verified by calculating and comparing the total energies with and without vdW contributions. Upon completion of the sliding, calculated vdW-gap with and without vdW contributions increases by 2.7 and 5.6%, respectively. The highest energy barrier encountered throughout the sliding pathway with (without) vdW contributions is 0.84 (0.72) eV. Planar average charge density difference, charge transfer, and interface dipole moment are calculated and analyzed to investigate the variation in interfacial electronic properties resulting from layer-sliding and intercalation. A notable increase (5.86%) in charge transfer from hBN to silicene is seen upon completion of the layer-sliding. Several optical properties associated with the intercalated vdWHS such as real [\varepsilon_1\left(\omega\right)] and imaginary [\varepsilon_2\left(\omega\right)] parts of the complex dielectric function (DF), electron energy loss function [L\left(\omega\right)], diagonal components of the dielectric tensor [\varepsilon\left(i\omega\right)] and optical joint density of states\ \left[J\left(\omega\right)\right] have been examined. Polarizability of un-slided vdWHS is changed significantly due to the layer-sliding, with a reduction of 24.85 and 6.76% for the midway and fully-slided configurations, respectively. Sliding process results in an increase in the optical absorption in the UV region by 23.14 and 44.18% for the midway and fully-slided configurations as compared with the un-slided vdWHS. Plots relating to J\left(\omega\right)\ indicate that the most probable optical transitions occur at 7.50, 7.66, and 7.43 eV for the initial, middle, and fully-slided configurations, respectively. The suggested layer-sliding technique has a potential to introduce multifunctionality in 2D materials by varying the properties in a controllable and reversible manner.
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通过界面工程实现可控多功能性:硅/卤化萘范德华异质结构案例
该研究展示了层滑动介导的可控界面工程,从而诱导由二维硅烯和六方氮化硼(hBN)组成的范德华异质结构(vdWHS)的多功能性。为了体现上述策略,在 hBN 上滑动硅烯,并分析 vdWHS 所产生的物理性质变化,如界面电子和光学性质。通过对 vdWHS 的巧妙建模,不仅确定了最稳定的堆叠模式,还将硅烯与 hBN 之间的晶格失配降至 2.97%。在获得 vdWHS 的最佳堆叠构型后,筛选出钾(K)插层在界面上的位置。沿着滑动路径反复计算与插层体系有关的各种物理参数,如结合能、vdW 间隙和屈曲距离 (ΔZ)。通过计算和比较有 vdW 贡献和无 vdW 贡献的总能量,验证了各种 K 互层堆叠模式的稳定性。滑动完成后,计算出的有 vdW 贡献和无 vdW 贡献的 vdW 间隙分别增加了 2.7% 和 5.6%。有(无)vdW 贡献时,整个滑动路径中遇到的最高能障为 0.84 (0.72) eV。通过计算和分析平面平均电荷密度差、电荷转移和界面偶极矩,研究了层滑动和插层导致的界面电子特性变化。层滑动完成后,从氢化硼到硅烯的电荷转移显著增加(5.86%)。与插层 vdWHS 相关的一些光学特性,如复合介电函数(DF)的实部[\varepsilon_1\left(\omega\right)]和虚部[\varepsilon_2\left(\omega\right)]、电子能量损失函数[L(left(\omega\right)]、介电张量[\varepsilon(left(\omega\right)]的对角线部分以及状态的光学联合密度[J(left(\omega\right)\right]都已被研究过。由于层滑动,未滑动 vdWHS 的极化率发生了显著变化,中途和完全滑动配置的极化率分别降低了 24.85% 和 6.76%。与未滑动的 vdWHS 相比,滑动过程导致中途和完全滑动配置在紫外区的光吸收分别增加了 23.14% 和 44.18%。与 J(left(\omega\right)\有关的曲线图表明,对于初始、中间和完全滑动配置,最可能的光学转变分别发生在 7.50、7.66 和 7.43 eV。所建议的层滑动技术有望通过可控和可逆的方式改变二维材料的特性,从而在二维材料中引入多功能性。
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