Non-reversibility of crystal growth and Dissolution: Nanoscale direct observations and kinetics of transition through the saturation point

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-02-09 DOI:10.1016/j.jcrysgro.2024.127614
Natalia N. Piskunova
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Abstract

Atomic force microscopy experiments with modelling nature-like factors affecting crystal-genetic processes registered phenomena accompanying continuous transition from dissolution to growth (through the saturation point) on one and the same defect in a molecular hydroxymethylquinoxalinedioxide (C10H10N2O4) crystal. The conducted analysis of the mechanisms of attachment/detachment of the matter to the crystal, the calculations of nanoscale kinetic parameters and their further statistic processing allowed us to gain insights into the fundamental problem of reversibility of growth and dissolution. The findings will contribute to understanding of the theory of crystal-forming processes occurring near equilibrium and to interpretation of pictures of zoning in nature crystals.

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晶体生长和溶解的不可逆性:通过饱和点的纳米级直接观察和过渡动力学
通过模拟影响晶体生长过程的自然因素,原子力显微镜实验记录了在羟甲基氧化喹(C10H10N2O4)分子晶体的同一个缺陷上从溶解到生长(通过饱和点)的连续转变现象。通过分析物质附着/脱离晶体的机制、计算纳米级动力学参数及其进一步的统计处理,我们得以深入了解生长和溶解的可逆性这一根本问题。这些发现将有助于理解接近平衡时晶体形成过程的理论,并有助于解释自然界晶体中的分带图片。
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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