Magnonic combinatorial memory

Abstract

In this work, we consider a type of magnetic memory where information is encoded into the mutual arrangement of magnets. The device is an active ring circuit comprising magnetic and electric parts connected in series. The electric part includes a broadband amplifier, phase shifters, and attenuators. The magnetic part is a mesh of magnonic waveguides with magnets placed on the waveguide junctions. There are amplitude and phase conditions for auto-oscillations to occur in the active ring circuit. The frequency(s) of the auto-oscillation and spin wave propagation path(s) in the magnetic part depends on the mutual arrangement of magnets in the mesh. The propagation path is detected with a set of power sensors. The correlation between circuit parameters and spin wave path is the basis of memory operation. The combination of input/output switches connecting electric and magnetic parts and electric phase shifters constitute the memory address. The output of the power sensors is the memory state. We present experimental data on the proof-of-the-concept experiments on the prototype with three magnets placed on top of a single-crystal yttrium iron garnet Y3Fe2(FeO4)3 (YIG) film. There are three selected places for the magnets to be placed. There is a variety of spin wave propagation paths for each configuration of magnets. The results demonstrate a robust operation with an On/Off ratio for path detection exceeding 35 dB at room temperature. The number of possible magnet arrangements scales factorially with the size of the magnetic part. The number of possible paths per one configuration scales factorial as well. It makes it possible to drastically increase the data storage density compared to conventional memory devices. Magnonic combinatorial memory with an array of 100 × 100 magnets can store all information generated by humankind. Physical limits and constraints are also discussed.