{"title":"Exploring 2D materials by high pressure synthesis: hBN, Mg-hBN, b-P, b-AsP, and GeAs","authors":"N.D. Zhigadlo","doi":"10.1016/j.jcrysgro.2024.127627","DOIUrl":null,"url":null,"abstract":"<div><p>In materials science, selecting the right synthesis technique for specific compounds is one of the most important steps. High-pressure conditions have a significant effect on the crystal growth processes, leading to the creation of unique structures and properties that usually are not possible under normal conditions. The prime objective of this article is to illustrate the benefits of using high-pressure, high-temperature (HPHT) technique when developing two-dimensional (2D) materials. We could successfully grow bulk single crystals of hexagonal boron nitride (hBN) and magnesium doped hexagonal boron nitride (Mg-hBN) from Mg-B-N solvent. Further exploration of the Mg-B-N system could lead to the crystallization of isotopically <sup>10</sup>B and <sup>11</sup>B enriched hBN crystals, and other doped variants of it. Black phosphorus (b-P) and black phosphorus doped with arsenic (b-AsP) were obtained by directly converting its elements into melt and subsequently crystallizing them under HPHT. Germanium arsenide (GeAs) bulk single crystals were also obtained from the melt at a pressure of 1 GPa. Upon crystallization, all these compounds exhibit the anticipated layered structures, which makes them easy to exfoliate into 2D flakes, thus providing opportunities to modify their electrical behavior and create new useful devices.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824000629","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
In materials science, selecting the right synthesis technique for specific compounds is one of the most important steps. High-pressure conditions have a significant effect on the crystal growth processes, leading to the creation of unique structures and properties that usually are not possible under normal conditions. The prime objective of this article is to illustrate the benefits of using high-pressure, high-temperature (HPHT) technique when developing two-dimensional (2D) materials. We could successfully grow bulk single crystals of hexagonal boron nitride (hBN) and magnesium doped hexagonal boron nitride (Mg-hBN) from Mg-B-N solvent. Further exploration of the Mg-B-N system could lead to the crystallization of isotopically 10B and 11B enriched hBN crystals, and other doped variants of it. Black phosphorus (b-P) and black phosphorus doped with arsenic (b-AsP) were obtained by directly converting its elements into melt and subsequently crystallizing them under HPHT. Germanium arsenide (GeAs) bulk single crystals were also obtained from the melt at a pressure of 1 GPa. Upon crystallization, all these compounds exhibit the anticipated layered structures, which makes them easy to exfoliate into 2D flakes, thus providing opportunities to modify their electrical behavior and create new useful devices.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.