{"title":"Integrated 2T1C pixel circuit with a-Si TFT and NMOS for active matrix mini-LED displays","authors":"Chenming Zhong, Guangyao Li, Xi Zheng, Lihong Zhu, Jianbang Zhuang, Yijun Lu, Zhong Chen, Weijie Guo","doi":"10.1088/1361-6641/ad238c","DOIUrl":null,"url":null,"abstract":"The 2T1C pixel driver circuit for mini-LED direct display has been proposed, which separates the switching transistor and the driver transistor from the same display substrate, replaces the driver transistor with n-metal oxide semiconductor (NMOS), and combines printed circuit board substrate and thin-film transistor (TFT) substrate to improve the driving capability of the circuit. The NMOS was soldered with mini-LEDs simultaneously onto a substrate which connects to the a-Si TFT array. Two driving modes for a 32-level gray-scale display panel were investigated to compare the voltage-current and optical characteristics. The results demonstrated that the drain-driving mode is better suited for high brightness and high-power display application scenarios as it supports higher-driven currents, but the source-driving mode is more appropriate for precision gray-scale applications due to the higher current linearity of the mode.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"22 4 1","pages":""},"PeriodicalIF":2.1000,"publicationDate":"2024-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad238c","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract
The 2T1C pixel driver circuit for mini-LED direct display has been proposed, which separates the switching transistor and the driver transistor from the same display substrate, replaces the driver transistor with n-metal oxide semiconductor (NMOS), and combines printed circuit board substrate and thin-film transistor (TFT) substrate to improve the driving capability of the circuit. The NMOS was soldered with mini-LEDs simultaneously onto a substrate which connects to the a-Si TFT array. Two driving modes for a 32-level gray-scale display panel were investigated to compare the voltage-current and optical characteristics. The results demonstrated that the drain-driving mode is better suited for high brightness and high-power display application scenarios as it supports higher-driven currents, but the source-driving mode is more appropriate for precision gray-scale applications due to the higher current linearity of the mode.
期刊介绍：
Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic.
The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including:
fundamental properties
materials and nanostructures
devices and applications
fabrication and processing
new analytical techniques
simulation
emerging fields:
materials and devices for quantum technologies
hybrid structures and devices
2D and topological materials
metamaterials
semiconductors for energy
flexible electronics.
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