Straight-Line-Shaped Grooves Induced by Agglomeration in Thin Si Films Obtained by the Continuous-wave Laser Crystallization of A-Si on Insulator

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-02-14 DOI:10.1007/s11664-024-10955-8

Nobuo Sasaki, Satoshi Takayama, Rikuto Sasai, Yukiharu Uraoka

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Abstract

We have obtained straight-line-shaped agglomeration grooves of 2~3.5 μm width in the ~60-nm-thick Si thin films by the continuous-wave laser crystallization (CLC) when the laser power is increased above the optimum power to obtain grain boundary-free (GB-free) films. The GB-free CLC is suitable for fabricating monolithic three-dimensional integrations. The grooves are formed in the Si film vertically from the Si surface to the underlying insulating substrate, and a hump of the Si film is generated along the edge of the groove at the retarded side of the scan. In situ observation of the crystal growth shows that the grooves originate from voids, which happen to be generated by agglomeration in the melt zone. The voids move at a constant velocity, V_void , within the melt zone. The melt zone moves at the scan velocity, V, to the scan direction. The void velocity, V_void , is obtained from the angle of the groove line to the scan direction, and is found to be proportional to V^−0.5.

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绝缘体上的 A-Si 通过连续波激光结晶获得的硅薄膜中因团聚而产生的直线形沟槽

利用连续波激光结晶（CLC）技术，在~60 nm厚的Si薄膜上获得了宽度为2~3.5 μm的直线型团聚沟槽，当激光功率增加到最佳功率以上，可获得无晶界（无gb）薄膜。无gb的CLC适用于制造单片三维集成。在所述硅膜中，从所述硅表面垂直于所述绝缘衬底形成沟槽，在所述扫描缓速侧沿所述沟槽边缘形成所述硅膜的驼峰。对晶体生长的原位观察表明，这些沟槽起源于孔洞，而孔洞恰好是熔体区聚集产生的。在熔化区内，空洞以恒定的速度移动。熔化区以扫描速度V向扫描方向移动。从凹槽线与扫描方向的夹角处得到空洞速度Vvoid，与V−0.5成正比。

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.