Pub Date : 2025-12-01DOI: 10.1007/s11664-025-12566-3
Shuntao Xu, Ruilin Wu, Zhengfu Zhang, Weibo Kong, Lixia Bao
Hierarchical architecture materials of mesoporous carbon wrapped graphene (MC@G) composite are prepared by a sol-gel coating method, MC@G composites are infiltrated with sulfur to prepare cathode material of lithium-sulfur batteries (Li-S) with high discharge capacity at low current. The MC@G was synthesized using graphene as conductive base material and mesoporous carbon shell wrapped on the surface of graphene as a matrix for loading sulfur, which results in high utilization of active material at low current. The hierarchical architecture of MC@G carbon/carbon nanocomposites forms an effective conducting base material for electron transport in electrode material, which significantly improves the electronic conductivity of cathode material and utilization of active material. Taking advantage of the structure, the S/MC@G cathode material exhibits an initial specific discharge capacity of 1158 mA h g−1 and 1131 mA h g−1 at current of 0.1 C and 0.5 C, the S/MC@G cathode material exhibits higher capacity retention and rate performance than S/rGO cathode material. We believe that the hierarchical mesoporous architecture of MC@G can also be applicable for designing some other electrode materials for energy storage.
采用溶胶-凝胶包覆法制备中孔碳包覆石墨烯(MC@G)复合材料的层次化结构材料,MC@G复合材料中渗透硫,制备低电流高放电容量锂硫电池(li -硫电池)正极材料。以石墨烯为导电基材,包裹在石墨烯表面的介孔碳壳作为负载硫的基体,合成了MC@G,使活性材料在低电流下具有较高的利用率。MC@G碳/碳纳米复合材料的层次化结构为电极材料中的电子传递形成了有效的导电基材,显著提高了正极材料的电子导电性和活性材料的利用率。利用该结构,S/MC@G阴极材料在0.1 C和0.5 C电流下的初始比放电容量分别为1158 mA h g - 1和1131 mA h g - 1, S/MC@G阴极材料比S/rGO阴极材料具有更高的容量保持率和倍率性能。我们相信MC@G的分层介孔结构也可以应用于其他储能电极材料的设计。
{"title":"Hierarchical Architecture of Mesoporous Carbon Wrapped Graphene as Matrix Material of Sulfur for Cathode Material of Lithium-Sulfur Batteries","authors":"Shuntao Xu, Ruilin Wu, Zhengfu Zhang, Weibo Kong, Lixia Bao","doi":"10.1007/s11664-025-12566-3","DOIUrl":"10.1007/s11664-025-12566-3","url":null,"abstract":"<div><p>Hierarchical architecture materials of mesoporous carbon wrapped graphene (MC@G) composite are prepared by a sol-gel coating method, MC@G composites are infiltrated with sulfur to prepare cathode material of lithium-sulfur batteries (Li-S) with high discharge capacity at low current. The MC@G was synthesized using graphene as conductive base material and mesoporous carbon shell wrapped on the surface of graphene as a matrix for loading sulfur, which results in high utilization of active material at low current. The hierarchical architecture of MC@G carbon/carbon nanocomposites forms an effective conducting base material for electron transport in electrode material, which significantly improves the electronic conductivity of cathode material and utilization of active material. Taking advantage of the structure, the S/MC@G cathode material exhibits an initial specific discharge capacity of 1158 mA h g<sup>−1</sup> and 1131 mA h g<sup>−1</sup> at current of 0.1 C and 0.5 C, the S/MC@G cathode material exhibits higher capacity retention and rate performance than S/rGO cathode material. We believe that the hierarchical mesoporous architecture of MC@G can also be applicable for designing some other electrode materials for energy storage.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 1","pages":"615 - 627"},"PeriodicalIF":2.5,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145760990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-22DOI: 10.1007/s11664-025-12569-0
Mohammad Z. Rahman, Roshan Ali, Fazal Raziq, Liang Qiao
Polymeric melon, a heptazine-based carbon nitride, has attracted increasing attention as a sustainable metal-free semiconductor for electronic, optoelectronic, and energy storage applications. Yet, its fundamental optical and electronic characteristics remain debated, particularly regarding the intrinsic nature of photon absorption and the energetic positions of trap states. Here, a unified analytical framework combining Tauc analysis, Jacobian-transformed photoluminescence spectroscopy, and first-principles calculations is employed to clarify the transition mechanism and trap-state energetics in melon nanoparticles. The results reveal that photon absorption in melon arises from both an indirect and direct electronic transition depending on the selection of precursor monomers, and that shallow trap states, located near the conduction band, play a dominant role in carrier recombination dynamics. These findings reconcile longstanding inconsistencies in reported bandgaps and provide a reliable basis for interpreting optical excitation and charge-transport behavior. This integrated approach advances fundamental understanding of charge-carrier dynamics in polymeric melon and provides a broadly applicable strategy for evaluating optoelectronic processes in polymer semiconductors and related nanomaterials.
{"title":"Unraveling the Nature of Optical Transitions and Trap States in Polymeric Semiconductors","authors":"Mohammad Z. Rahman, Roshan Ali, Fazal Raziq, Liang Qiao","doi":"10.1007/s11664-025-12569-0","DOIUrl":"10.1007/s11664-025-12569-0","url":null,"abstract":"<div><p>Polymeric melon, a heptazine-based carbon nitride, has attracted increasing attention as a sustainable metal-free semiconductor for electronic, optoelectronic, and energy storage applications. Yet, its fundamental optical and electronic characteristics remain debated, particularly regarding the intrinsic nature of photon absorption and the energetic positions of trap states. Here, a unified analytical framework combining Tauc analysis, Jacobian-transformed photoluminescence spectroscopy, and first-principles calculations is employed to clarify the transition mechanism and trap-state energetics in melon nanoparticles. The results reveal that photon absorption in melon arises from both an indirect and direct electronic transition depending on the selection of precursor monomers, and that shallow trap states, located near the conduction band, play a dominant role in carrier recombination dynamics. These findings reconcile longstanding inconsistencies in reported bandgaps and provide a reliable basis for interpreting optical excitation and charge-transport behavior. This integrated approach advances fundamental understanding of charge-carrier dynamics in polymeric melon and provides a broadly applicable strategy for evaluating optoelectronic processes in polymer semiconductors and related nanomaterials.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 1","pages":"115 - 122"},"PeriodicalIF":2.5,"publicationDate":"2025-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145760980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-21DOI: 10.1007/s11664-025-12511-4
Xuexue Pan, Yuanlin Xie, Chujun Li, Yingyin He, Yitong Zhang, Yilin Wang, Ziman Li, Peiyu Peng, Jun Wang
With the urgent demand for high-performance energy storage materials in the global energy transition, traditional experimental trial and error methods are difficult to meet the rapid research and development needs owing to long cycles and high costs. In recent years, the deep integration of computational materials science and artificial intelligence (AI) technology has provided revolutionary tools for the rational design and performance optimization of energy storage materials. This article systematically reviews the progress of research on energy storage material computation and AI systems. At the traditional method level, quantum mechanics computation (such as VASP, Quantum ESPRESSO), molecular dynamics (such as LAMMPS, GROMACS), and high-throughput computing platforms (such as Materials Project) have achieved accurate predictions of material electronic structure, interface dynamics, and high-throughput screening. At the AI-driven level, generative models (GNoME, 3D-GPT), graph neural networks (MEGNet, CGCNN), and experimental computational closed–loop systems (such as the autonomous driving laboratory A-Lab) have significantly accelerated the discovery and reverse design of new materials. Further focusing on the integration trend of multi-scale modeling and AI, physical information-driven AI models (DPMD, PINNs) and cross-scale integration platforms (ASE, MedeA) are driving the collaborative improvement of material simulation accuracy and efficiency. However, data scarcity, computational bottlenecks caused by multi-physics coupling, and barriers to tool industrialization remain current challenges. In the future, sustainable design paradigms, open-source ecological construction, and human-machine collaboration models will lead the research and development of energy storage materials into the era of “digital priority.” This article aims to provide a technical roadmap reference for interdisciplinary research and call for collaboration between academia and industry to overcome key bottlenecks and accelerate the innovation breakthrough and large-scale application of energy storage materials.
{"title":"Convergence of Computational Materials Science and AI for Next-Generation Energy Storage Materials","authors":"Xuexue Pan, Yuanlin Xie, Chujun Li, Yingyin He, Yitong Zhang, Yilin Wang, Ziman Li, Peiyu Peng, Jun Wang","doi":"10.1007/s11664-025-12511-4","DOIUrl":"10.1007/s11664-025-12511-4","url":null,"abstract":"<div><p>With the urgent demand for high-performance energy storage materials in the global energy transition, traditional experimental trial and error methods are difficult to meet the rapid research and development needs owing to long cycles and high costs. In recent years, the deep integration of computational materials science and artificial intelligence (AI) technology has provided revolutionary tools for the rational design and performance optimization of energy storage materials. This article systematically reviews the progress of research on energy storage material computation and AI systems. At the traditional method level, quantum mechanics computation (such as VASP, Quantum ESPRESSO), molecular dynamics (such as LAMMPS, GROMACS), and high-throughput computing platforms (such as Materials Project) have achieved accurate predictions of material electronic structure, interface dynamics, and high-throughput screening. At the AI-driven level, generative models (GNoME, 3D-GPT), graph neural networks (MEGNet, CGCNN), and experimental computational closed–loop systems (such as the autonomous driving laboratory A-Lab) have significantly accelerated the discovery and reverse design of new materials. Further focusing on the integration trend of multi-scale modeling and AI, physical information-driven AI models (DPMD, PINNs) and cross-scale integration platforms (ASE, MedeA) are driving the collaborative improvement of material simulation accuracy and efficiency. However, data scarcity, computational bottlenecks caused by multi-physics coupling, and barriers to tool industrialization remain current challenges. In the future, sustainable design paradigms, open-source ecological construction, and human-machine collaboration models will lead the research and development of energy storage materials into the era of “digital priority.” This article aims to provide a technical roadmap reference for interdisciplinary research and call for collaboration between academia and industry to overcome key bottlenecks and accelerate the innovation breakthrough and large-scale application of energy storage materials.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 1","pages":"45 - 114"},"PeriodicalIF":2.5,"publicationDate":"2025-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11664-025-12511-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145761081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-21DOI: 10.1007/s11664-025-12541-y
Pengfei He, Jie Jian, Xiuru Tang, Zhengrong Xue, Hui Zhao, Jiacong Bian, Yan Wang, Jinrong Cheng
Traditionally sintered (TS) BiFeO3-0.33PbTiO3-0.13Ba(Zr0.5Ti0.5)O3 (BF-PT-BZT) ceramics have attracted much attention due to their high Curie temperature (TC) and excellent piezoelectric properties. However, the rapid reduction of resistivity and coarse grain size greatly limit their resistivity and mechanical strength at elevated temperatures. In this work, BF-PT-BZT ceramics were prepared using the two-step sintering (TSS) solid-state reaction method. Specimens were first sintered at a higher temperature (T1) without holding and then sintered at a lower temperature (T2) for 8 h. The results show that not holding at T1 effectively inhibited grain growth, while a long sintering time at T2 promoted ceramic densification. BF-PT-BZT ceramics sintered at T1and T2of 1085°C and 950°C, respectively, exhibited enhanced TC and piezoelectric constant (({d}_{33})) of 465°C and 370 pC/N, respectively. The resistivity at 400°C of the TSS ceramics was as high as 5.05 (times ) 105 Ω·cm, which is higher than that of the TS ceramics. X-ray photoelectron spectroscopy (XPS) analysis revealed that two-step sintering reduces the concentration of defects and oxygen vacancies, resulting in enhanced insulation properties of BF-PT-BZT ceramics. Our results indicate that TSS-treated BF-PT-BZT ceramics exhibit reduced grain size and enhanced piezoelectric properties, making them suitable for high-temperature piezoelectric sensor and actuator applications.
{"title":"Reduced Grain Size and Enhanced Piezoelectric Constant of BiFeO3-0.33PbTiO3-0.13Ba(Zr0.5Ti0.5)O3 Ceramics by Two-Step Sintering","authors":"Pengfei He, Jie Jian, Xiuru Tang, Zhengrong Xue, Hui Zhao, Jiacong Bian, Yan Wang, Jinrong Cheng","doi":"10.1007/s11664-025-12541-y","DOIUrl":"10.1007/s11664-025-12541-y","url":null,"abstract":"<div><p>Traditionally sintered (TS) BiFeO<sub>3</sub>-0.33PbTiO<sub>3</sub>-0.13Ba(Zr<sub>0.5</sub>Ti<sub>0.5</sub>)O<sub>3</sub> (BF-PT-BZT) ceramics have attracted much attention due to their high Curie temperature (<i>T</i><sub><i>C</i></sub>) and excellent piezoelectric properties. However, the rapid reduction of resistivity and coarse grain size greatly limit their resistivity and mechanical strength at elevated temperatures. In this work, BF-PT-BZT ceramics were prepared using the two-step sintering (TSS) solid-state reaction method. Specimens were first sintered at a higher temperature (<i>T</i><sub>1</sub>) without holding and then sintered at a lower temperature (<i>T</i><sub>2</sub>) for 8 h. The results show that not holding at <i>T</i><sub>1</sub> effectively inhibited grain growth, while a long sintering time at <i>T</i><sub>2</sub> promoted ceramic densification. BF-PT-BZT ceramics sintered at <i>T</i><sub>1</sub>and <i>T</i><sub>2</sub>of 1085°C and 950°C, respectively, exhibited enhanced <i>T</i><sub><i>C</i></sub> and piezoelectric constant (<span>({d}_{33})</span>) of 465°C and 370 pC/N, respectively. The resistivity at 400°C of the TSS ceramics was as high as 5.05 <span>(times )</span> 10<sup>5</sup> Ω·cm, which is higher than that of the TS ceramics. X-ray photoelectron spectroscopy (XPS) analysis revealed that two-step sintering reduces the concentration of defects and oxygen vacancies, resulting in enhanced insulation properties of BF-PT-BZT ceramics. Our results indicate that TSS-treated BF-PT-BZT ceramics exhibit reduced grain size and enhanced piezoelectric properties, making them suitable for high-temperature piezoelectric sensor and actuator applications.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 1","pages":"402 - 412"},"PeriodicalIF":2.5,"publicationDate":"2025-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145760999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-21DOI: 10.1007/s11664-025-12563-6
Jing Wang, Cheng Fang, Chang Shu, Ling Zhou
In the fields of wearable sensors, energy harvesting and actuator applications, organic–inorganic composite piezoelectric materials have gained significant research interest owing to their tunable performance, flexibility, light weight, and facile fabrication. In this work, composite piezoelectric films were fabricated by dispersing hydroxylated BaTiO3 (BTO-OH) nanoparticles into polyvinylidene fluoride-hexafluoropropylene copolymer (P(VDF-HFP)). The β phase content was found to increase with filler concentration, reaching a maximum of 89.67% in films containing 50% BTO-OH, which acted as a nucleating agent for β phase crystallization. Moreover, the 50% BTO-OH composite film exhibited exceptional dielectric properties, featuring a dielectric constant of 19.8 and a loss tangent of 0.08 at a frequency of 103 Hz. The maximum polarization reached 8.8 μC cm−2 under an electric field of 3000 kV cm−1. The piezoelectric strain coefficient d33 reached 20.5 pC N−1. This work offers an efficient and low-cost approach to the fabrication of BTO-based dielectric and piezoelectric composites.