Pub Date : 2024-09-25DOI: 10.1007/s11664-024-11471-5
Rui Tong, Wenfei Wu, Zhi Wang
The potential-induced degradation (PID) performance is of high significance for photovoltaic (PV) modules. In accordance with the IEC 61215-2: 2021 standard, we analyzed the factors that affect the measurement of PID performance, including the effects of a light soak of the p-type gallium (Ga)-doped silicon mono-facial PV modules, the resistivity of the water used for humidification of the environmental chamber, and the relative humidity of the chamber. We also examined the change of the modules’ anti-PID performance under the erosion by NaCl solution and by higher humidity combined with NaCl solution. The results show that a light soak pre-treatment before the PID test of the module leads to a difference of 0.02% in average power loss. The influence of humidifying water with different resistivities used in the environmental chamber on the PID test is negligible. An increase in humidity substantially reduces the anti-PID performance of the module. When the EVA film thickness was reduced from 0.65 mm to 0.55 mm, the power loss increased from 2.25% to 3.96% after the PID test. In addition, NaCl on the backsheet of the module could accelerate the PID effect under applied electric field conditions, resulting in the formation of localized darkening area observed under electroluminescence (EL) image. Finally, after the PID test in the presence of higher humidity and NaCl solution, the average power loss of the modules amounted to 10.80%, while it was 1.29% for the modules after the standard PID test. Therefore, it is vital to improve the anti-PID performance of mono-facial PV modules in a high relative humidity and salt-mist environment.
{"title":"Factors Influencing Standard PID Test and Anti-PID Performance of Ga-Doped PERC Mono-Facial Photovoltaic Modules","authors":"Rui Tong, Wenfei Wu, Zhi Wang","doi":"10.1007/s11664-024-11471-5","DOIUrl":"https://doi.org/10.1007/s11664-024-11471-5","url":null,"abstract":"<p>The potential-induced degradation (PID) performance is of high significance for photovoltaic (PV) modules. In accordance with the IEC 61215-2: 2021 standard, we analyzed the factors that affect the measurement of PID performance, including the effects of a light soak of the <i>p</i>-type gallium (Ga)-doped silicon mono-facial PV modules, the resistivity of the water used for humidification of the environmental chamber, and the relative humidity of the chamber. We also examined the change of the modules’ anti-PID performance under the erosion by NaCl solution and by higher humidity combined with NaCl solution. The results show that a light soak pre-treatment before the PID test of the module leads to a difference of 0.02% in average power loss. The influence of humidifying water with different resistivities used in the environmental chamber on the PID test is negligible. An increase in humidity substantially reduces the anti-PID performance of the module. When the EVA film thickness was reduced from 0.65 mm to 0.55 mm, the power loss increased from 2.25% to 3.96% after the PID test. In addition, NaCl on the backsheet of the module could accelerate the PID effect under applied electric field conditions, resulting in the formation of localized darkening area observed under electroluminescence (EL) image. Finally, after the PID test in the presence of higher humidity and NaCl solution, the average power loss of the modules amounted to 10.80%, while it was 1.29% for the modules after the standard PID test. Therefore, it is vital to improve the anti-PID performance of mono-facial PV modules in a high relative humidity and salt-mist environment.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"40 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142386225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-19DOI: 10.1007/s11664-024-11409-x
Yixin Chen, Jie Li, Yang Xiao, Kai Sun, Yiheng Rao, Yulong Liao, Yingli Liu
Yttrium iron garnet (Y3Fe5O12, YIG) ferrite has excellent magnetic properties that are suitable for microwave communication devices. In the present research, Ca-Zr co-substituted Y1.83−xBi1.17CaxFe5−xZrxO12 (YBiIG, x = 0.00–0.15 with a step of 0.05) ferrites were prepared by a solid-state reaction method to enhance microwave magnetic and dielectric properties. The phase formation, microstructure, and magnetic and dielectric properties of the materials were investigated by x-ray diffraction, scanning electron microscopy, impedance analyzer, vibrating sample magnetometer (VSM), and ferromagnetic resonance (FMR) linewidth. The results showed that Ca2+-Zr4+ ions did not change the phase formation of the ferrites and enhanced the magnetic permeability (mu^{{prime }}) ((mu^{{prime }}) = 24.10 at 10 MHz, x = 0.15) and dielectric constant ((varepsilon^{{prime }}) = 24.55 at 10 MHz, x = 0.15). Meanwhile, the specific saturation magnetization (σs) increased from 20.26 emu/g to 22.79 emu/g with the increase of Ca-Zr substitution, and the FMR linewidth (ΔH) decreased from 406.34 Oe to 339.60 Oe. The work showed that the high dielectric constant exhibited by Ca-Zr-substituted YBiIG ferrite materials has potential application value in high-frequency microwave device applications, such as circulators, isolators, phase shifters, and other microwave components.
钇铁石榴石(Y3Fe5O12,YIG)铁氧体具有优异的磁性能,适用于微波通信设备。本研究采用固态反应法制备了 Ca-Zr 共取代的 Y1.83-xBi1.17CaxFe5-xZrxO12 (YBiIG,x = 0.00-0.15,步长为 0.05)铁氧体,以增强微波磁性和介电性质。通过 X 射线衍射、扫描电子显微镜、阻抗分析仪、振动样品磁力计(VSM)和铁磁共振(FMR)线宽研究了材料的相形成、微观结构、磁性和介电性质。结果表明,Ca2+-Zr4+离子并没有改变铁氧体的相形成,反而增强了磁导率((mu^{/{prime }}) = 24.10 at 10 MHz, x = 0.15)和介电常数((varepsilon^{/{prime }}) = 24.55 at 10 MHz, x = 0.15)。同时,随着 Ca-Zr 取代度的增加,比饱和磁化率(σs)从 20.26 emu/g 增加到 22.79 emu/g,调频线宽(ΔH)从 406.34 Oe 下降到 339.60 Oe。研究结果表明,Ca-Zr 取代的 YBiIG 铁氧体材料所表现出的高介电常数在高频微波器件应用中具有潜在的应用价值,如环行器、隔离器、移相器和其他微波元件。
{"title":"Enhanced Microwave Magnetic and Dielectric Properties of YBiIG Ferrite by Ca-Zr Co-substitution","authors":"Yixin Chen, Jie Li, Yang Xiao, Kai Sun, Yiheng Rao, Yulong Liao, Yingli Liu","doi":"10.1007/s11664-024-11409-x","DOIUrl":"https://doi.org/10.1007/s11664-024-11409-x","url":null,"abstract":"<p>Yttrium iron garnet (Y<sub>3</sub>Fe<sub>5</sub>O<sub>12</sub>, YIG) ferrite has excellent magnetic properties that are suitable for microwave communication devices. In the present research, Ca-Zr co-substituted Y<sub>1.83−<i>x</i></sub>Bi<sub>1.17</sub>Ca<sub><i>x</i></sub>Fe<sub>5−<i>x</i></sub>Zr<sub><i>x</i></sub>O<sub>12</sub> (YBiIG, <i>x</i> = 0.00–0.15 with a step of 0.05) ferrites were prepared by a solid-state reaction method to enhance microwave magnetic and dielectric properties. The phase formation, microstructure, and magnetic and dielectric properties of the materials were investigated by x-ray diffraction, scanning electron microscopy, impedance analyzer, vibrating sample magnetometer (VSM), and ferromagnetic resonance (FMR) linewidth. The results showed that Ca<sup>2+</sup>-Zr<sup>4+</sup> ions did not change the phase formation of the ferrites and enhanced the magnetic permeability <span>(mu^{{prime }})</span> (<span>(mu^{{prime }})</span> = 24.10 at 10 MHz, <i>x</i> = 0.15) and dielectric constant (<span>(varepsilon^{{prime }})</span> = 24.55 at 10 MHz, <i>x</i> = 0.15). Meanwhile, the specific saturation magnetization (<i>σ</i><sub>s</sub>) increased from 20.26 emu/g to 22.79 emu/g with the increase of Ca-Zr substitution, and the FMR linewidth (Δ<i>H</i>) decreased from 406.34 Oe to 339.60 Oe. The work showed that the high dielectric constant exhibited by Ca-Zr-substituted YBiIG ferrite materials has potential application value in high-frequency microwave device applications, such as circulators, isolators, phase shifters, and other microwave components.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"13 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-18DOI: 10.1007/s11664-024-11452-8
Anju Babu, N. Madhusudhana Rao
β-Gallium oxide has well-studied electrical characteristics but relatively less explored optical as well as magnetic properties. In this work, pure and Ni-doped β-Ga2O3 polycrystalline powders were prepared using a hydrothermal method to study the structural, optical, and magnetic properties at various concentrations of Ni at 1 M%, 3 M%, 5 M%, and 7 M%. XRD analysis confirmed the formation of monoclinic β-Ga2O3 up to Ni 1 M% doping. The formation of additional peaks was observed exclusively for the samples doped with Ni from 3 M% to 7 M%. These additional peaks belong to NiGa2O4 that has an inverse spinel structure. The reflectance studies using UV–Vis diffuse reflectance spectroscopy shows a reduction in bandgap from approximately 4.7 eV to 4.1 eV with the addition of the dopant. The emission peaks observed from photoluminescence studies shows UV, blue, and green emissions with varying intensity. Room-temperature magnetic studies performed using a vibrating sample magnetometer showed a transition from the diamagnetic state of the pure sample to the antiferromagnetic state with increasing Ni concentration in the doped samples. The diamagnetic properties of β-Ga2O3 makes it ineffective in spintronic applications. From the present work, the improved magnetism due to Ni doping coupled with the optical properties suggests that nickel-doped gallium oxide can be used as an optical magnetic bifunctional material.
{"title":"Structural, Optical, and Magnetic Studies of Nickel-Doped β-Ga2O3 Monoclinic and Spinel Polycrystalline Powders","authors":"Anju Babu, N. Madhusudhana Rao","doi":"10.1007/s11664-024-11452-8","DOIUrl":"https://doi.org/10.1007/s11664-024-11452-8","url":null,"abstract":"<p>β-Gallium oxide has well-studied electrical characteristics but relatively less explored optical as well as magnetic properties. In this work, pure and Ni-doped β-Ga<sub>2</sub>O<sub>3</sub> polycrystalline powders were prepared using a hydrothermal method to study the structural, optical, and magnetic properties at various concentrations of Ni at 1 M%, 3 M%, 5 M%, and 7 M%. XRD analysis confirmed the formation of monoclinic β-Ga<sub>2</sub>O<sub>3</sub> up to Ni 1 M% doping. The formation of additional peaks was observed exclusively for the samples doped with Ni from 3 M% to 7 M%. These additional peaks belong to NiGa<sub>2</sub>O<sub>4</sub> that has an inverse spinel structure. The reflectance studies using UV–Vis diffuse reflectance spectroscopy shows a reduction in bandgap from approximately 4.7 eV to 4.1 eV with the addition of the dopant. The emission peaks observed from photoluminescence studies shows UV, blue, and green emissions with varying intensity. Room-temperature magnetic studies performed using a vibrating sample magnetometer showed a transition from the diamagnetic state of the pure sample to the antiferromagnetic state with increasing Ni concentration in the doped samples. The diamagnetic properties of β-Ga<sub>2</sub>O<sub>3</sub> makes it ineffective in spintronic applications. From the present work, the improved magnetism due to Ni doping coupled with the optical properties suggests that nickel-doped gallium oxide can be used as an optical magnetic bifunctional material.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"38 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-17DOI: 10.1007/s11664-024-11432-y
C. Y. Khor, Mohd Sharizal Abdul Aziz, Chooi Jing Qi, Xing Qi Lim, M. H. H. Ishak, Mohd Arif Anuar Mohd Salleh
This paper investigates the impacts of epoxy material viscosity and different gold wire configurations on the total maximum deformation, maximum von Mises stress, and maximum equivalent elastic strain on the light-emitting diode (LED) encapsulation process. The simulation of the LED encapsulation process employed the Volume of Fluid (VOF), Fluid–Structure Interaction (FSI), and System Coupling methods within ANSYS software. The simulation results for an epoxy molding compound (EMC) with viscosity of 0.448 kg/m·s were validated by an experiment. A grid independence test was run to determine the minimum mesh refinement required for the simulation. The results revealed that the final fluid profile of the EMC at 0.448 kg/m·s conformed more closely to the experimental results than the other epoxies. The overall best performance of the wire configuration to the EMC on the LED encapsulation process, in descending order, was the square-loop, triangle-loop, S-loop, Q-loop, and M-loop. This study contributes to understanding the effects of epoxy materials and various gold wire configurations on key mechanical parameters in the LED encapsulation process, hence guiding LED manufacturers in selecting optimal epoxy materials and wire configurations to improve process reliability and performance.
本文研究了环氧树脂材料粘度和不同金线配置对发光二极管(LED)封装过程中总最大变形、最大 von Mises 应力和最大等效弹性应变的影响。LED 封装过程的模拟采用了 ANSYS 软件中的流体体积 (VOF)、流体-结构相互作用 (FSI) 和系统耦合方法。实验验证了粘度为 0.448 kg/m-s 的环氧模塑化合物 (EMC) 的模拟结果。进行了网格独立性测试,以确定模拟所需的最小网格细化度。结果表明,与其他环氧树脂相比,粘度为 0.448 kg/m-s 的 EMC 的最终流体剖面更接近实验结果。在 LED 封装过程中,导线配置对 EMC 的整体最佳性能依次为方形环路、三角形环路、S 形环路、Q 形环路和 M 形环路。这项研究有助于了解环氧树脂材料和各种金线配置对 LED 封装工艺中关键机械参数的影响,从而指导 LED 制造商选择最佳环氧树脂材料和金线配置,以提高工艺可靠性和性能。
{"title":"Effect of Epoxy Material Viscosity and Gold Wire Configuration on Light-Emitting Diode Encapsulation Process","authors":"C. Y. Khor, Mohd Sharizal Abdul Aziz, Chooi Jing Qi, Xing Qi Lim, M. H. H. Ishak, Mohd Arif Anuar Mohd Salleh","doi":"10.1007/s11664-024-11432-y","DOIUrl":"https://doi.org/10.1007/s11664-024-11432-y","url":null,"abstract":"<p>This paper investigates the impacts of epoxy material viscosity and different gold wire configurations on the total maximum deformation, maximum von Mises stress, and maximum equivalent elastic strain on the light-emitting diode (LED) encapsulation process. The simulation of the LED encapsulation process employed the Volume of Fluid (VOF), Fluid–Structure Interaction (FSI), and System Coupling methods within ANSYS software. The simulation results for an epoxy molding compound (EMC) with viscosity of 0.448 kg/m·s were validated by an experiment. A grid independence test was run to determine the minimum mesh refinement required for the simulation. The results revealed that the final fluid profile of the EMC at 0.448 kg/m·s conformed more closely to the experimental results than the other epoxies. The overall best performance of the wire configuration to the EMC on the LED encapsulation process, in descending order, was the square-loop, triangle-loop, S-loop, Q-loop, and M-loop. This study contributes to understanding the effects of epoxy materials and various gold wire configurations on key mechanical parameters in the LED encapsulation process, hence guiding LED manufacturers in selecting optimal epoxy materials and wire configurations to improve process reliability and performance.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-17DOI: 10.1007/s11664-024-11406-0
R. Mahesh, P. Venugopal Reddy
In ordered to understand the electronic structure, structural phase stability, magnetic properties, and Fermi surface studies of the 122 type of SrFe2X2, where (X = P, As, Sb) were investigated. For this purpose, the plane wave self-consistent method was used. Using the Brich–Murnaghan equation, their electronic structure and magnetic ordering were also investigated. It was understood that, under pressure, the compound SrFe2As2 undergoes a structural phase change from the tetragonal phase into the collapsed tetragonal phase. Further, due to their larger lattice constants, antimonides with larger local iron magnetic moment exhibit an enhanced Hund's rule coupling. Furthermore, smaller intra-atomic exchange coupling and significantly smaller lattice constants may be the cause of the extremely small local Fe moment for phosphates. The analysis of the valence charge density in the collapsed tetragonal phase demonstrates that the interactions between As atoms are more pronounced when compressed along the c-axis. The strength of this interaction is primarily governed by the Fe-As chemical bonding. The collapsed tetragonal phase of SrFe2As2 compounds, as observed in Fermi surface studies, indicates the absence of nesting of Fermi surfaces. It is clear that, from the studies, the tetragonal phase of Fermi surface nesting resulted in the long-range magnetic order, leading to the presence of superconductivity.
为了了解 122 型 SrFe2X2(其中 X = P、As、Sb)的电子结构、结构相稳定性、磁性能和费米面研究,我们对其进行了研究。为此,采用了平面波自洽方法。利用布里奇-默纳汉方程,还研究了它们的电子结构和磁有序性。据了解,在压力作用下,化合物 SrFe2As2 会发生结构相变,从四方相变为坍塌四方相。此外,由于晶格常数较大,局部铁磁矩较大的锑化物表现出更强的亨德法则耦合。此外,较小的原子内交换耦合和明显较小的晶格常数可能是磷酸盐局部铁磁矩极小的原因。对坍缩四方相中价电荷密度的分析表明,当沿 c 轴压缩时,As 原子间的相互作用更加明显。这种相互作用的强度主要受铁-砷化学键的影响。在费米面研究中观察到的 SrFe2As2 化合物的塌缩四方相表明费米面没有嵌套。从研究中可以清楚地看出,费米面嵌套的四方相导致了长程磁序,从而出现了超导现象。
{"title":"Influence of Pressure on Electronic, Magnetic Behavior, and Fermi Surface Studies of SrFe2X2 (X = P, As, Sb) Iron-Based Superconductors","authors":"R. Mahesh, P. Venugopal Reddy","doi":"10.1007/s11664-024-11406-0","DOIUrl":"https://doi.org/10.1007/s11664-024-11406-0","url":null,"abstract":"<p>In ordered to understand the electronic structure, structural phase stability, magnetic properties, and Fermi surface studies of the 122 type of SrFe<sub>2</sub>X<sub>2</sub>, where (X = P, As, Sb) were investigated. For this purpose, the plane wave self-consistent method was used. Using the Brich–Murnaghan equation, their electronic structure and magnetic ordering were also investigated. It was understood that, under pressure, the compound SrFe<sub>2</sub>As<sub>2</sub> undergoes a structural phase change from the tetragonal phase into the collapsed tetragonal phase. Further, due to their larger lattice constants, antimonides with larger local iron magnetic moment exhibit an enhanced Hund's rule coupling. Furthermore, smaller intra-atomic exchange coupling and significantly smaller lattice constants may be the cause of the extremely small local Fe moment for phosphates. The analysis of the valence charge density in the collapsed tetragonal phase demonstrates that the interactions between As atoms are more pronounced when compressed along the <i>c</i>-axis. The strength of this interaction is primarily governed by the Fe-As chemical bonding. The collapsed tetragonal phase of SrFe<sub>2</sub>As<sub>2</sub> compounds, as observed in Fermi surface studies, indicates the absence of nesting of Fermi surfaces. It is clear that, from the studies, the tetragonal phase of Fermi surface nesting resulted in the long-range magnetic order, leading to the presence of superconductivity.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"191 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-17DOI: 10.1007/s11664-024-11404-2
Jyoti, Rajesh Kumar, Ashok Kumar
In this work, thin films of CuO doped with 3% SnCl2 (0.97 g CuO-0.03 g SnCl2) were deposited on glass substrates using a sol–gel spin coating technique. The deposited thin films were annealed in a muffle furnace at 400°C for 2 h. UV–visible spectroscopy, a two-probe setup, and x-ray diffraction were utilized to analyze the optical, electrical, and structural properties, respectively. The optical bandgap of the doped films was identified within the range of 3.7–3.83 eV. Electrical investigation performed by the two-probe setup revealed that the prepared samples were ohmic in nature. It was found that the resistivity of the samples varied from 11.86 Ω·m to 6.04 Ω·m as the thickness of films increased from 165 nm to 570 nm. The gas-sensing properties of the prepared films were assessed at different operational temperatures and for varying concentrations of hydrogen sulfide gas. From the obtained data, it was observed that SnCl2-doped CuO thin films show excellent response toward H2S gas at room temperature.
在这项研究中,采用溶胶-凝胶旋涂技术在玻璃基底上沉积了掺杂 3% SnCl2 的氧化铜薄膜(0.97 g CuO-0.03 g SnCl2)。沉积的薄膜在马弗炉中于 400°C 下退火 2 小时后,利用紫外可见光谱、双探针装置和 X 射线衍射分别分析了其光学、电学和结构特性。掺杂薄膜的光带隙范围为 3.7-3.83 eV。利用双探针装置进行的电学研究表明,制备的样品具有欧姆性质。随着薄膜厚度从 165 纳米增加到 570 纳米,样品的电阻率从 11.86 Ω-m 变为 6.04 Ω-m。在不同的工作温度和不同浓度的硫化氢气体条件下,对所制备薄膜的气体感应特性进行了评估。从获得的数据中可以看出,掺杂氯化锡的氧化铜薄膜在室温下对 H2S 气体有极好的响应。
{"title":"Synthesis and Characterization of Sn-Doped CuO Thin Films for Gas Sensor Toward H2S Gas Sensing","authors":"Jyoti, Rajesh Kumar, Ashok Kumar","doi":"10.1007/s11664-024-11404-2","DOIUrl":"https://doi.org/10.1007/s11664-024-11404-2","url":null,"abstract":"<p>In this work, thin films of CuO doped with 3% SnCl<sub>2</sub> (0.97 g CuO-0.03 g SnCl<sub>2</sub>) were deposited on glass substrates using a sol–gel spin coating technique. The deposited thin films were annealed in a muffle furnace at 400°C for 2 h. UV–visible spectroscopy, a two-probe setup, and x-ray diffraction were utilized to analyze the optical, electrical, and structural properties, respectively. The optical bandgap of the doped films was identified within the range of 3.7–3.83 eV. Electrical investigation performed by the two-probe setup revealed that the prepared samples were ohmic in nature. It was found that the resistivity of the samples varied from 11.86 Ω·m to 6.04 Ω·m as the thickness of films increased from 165 nm to 570 nm. The gas-sensing properties of the prepared films were assessed at different operational temperatures and for varying concentrations of hydrogen sulfide gas. From the obtained data, it was observed that SnCl<sub>2</sub>-doped CuO thin films show excellent response toward H<sub>2</sub>S gas at room temperature.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fluorescence intensity ratio (FIR) technology is compulsorily needed in non-contact rare-earth luminescent temperature sensors. Here, we present Er/Yb:Y3Al5O12 phosphors synthesized via a high-temperature solid-state reaction method. The crystal structure, microstructure, up-conversion luminescence, and energy transfer between the two ions have been comprehensively analyzed. Under 980-nm excitation, the samples exhibited four distinct transition bands at 475 nm, 525 nm, 546 nm, and 664 nm. The quantum efficiency reached 12.14%. Utilizing the thermally coupled level of I525/I546 as a basis for analysis yields a maximum relative sensitivity of 1.05% K−1. We observed that the spectral color coordinates varied linearly with temperature within a specific range, suggesting its potential application as a means of temperature measurement. Furthermore, employing the non-thermally coupled levels of I546/I475 for temperature measurement results in an impressive maximum absolute sensitivity of 8.05% K−1, nearly 24 times higher than that achieved through thermally coupled levels alone. The temperature resolution of the synthetic material is basically less than 0.3 K with high thermal stability. Therefore, Er/Yb:Y3Al5O12 phosphors hold promise as viable candidates for components in temperature-sensor applications.
{"title":"Up-Conversion Luminescence and Optical Temperature-Sensing Properties of Yb3+ and Er3+ Co-doped Yttrium Aluminum Garnet Phosphor","authors":"Jiahao Zha, Chongjun He, Fangzhou Chen, Hongwei Wang, Biao Dong, Lijuan Liu, Mingjun Xia, Chenguang Deng, Qian Li, Yuangang Lu, Huiting Chen, Siguo Liu","doi":"10.1007/s11664-024-11428-8","DOIUrl":"https://doi.org/10.1007/s11664-024-11428-8","url":null,"abstract":"<p>Fluorescence intensity ratio (FIR) technology is compulsorily needed in non-contact rare-earth luminescent temperature sensors. Here, we present Er/Yb:Y<sub>3</sub>Al<sub>5</sub>O<sub>12</sub> phosphors synthesized via a high-temperature solid-state reaction method. The crystal structure, microstructure, up-conversion luminescence, and energy transfer between the two ions have been comprehensively analyzed. Under 980-nm excitation, the samples exhibited four distinct transition bands at 475 nm, 525 nm, 546 nm, and 664 nm. The quantum efficiency reached 12.14%. Utilizing the thermally coupled level of I<sub>525</sub>/I<sub>546</sub> as a basis for analysis yields a maximum relative sensitivity of 1.05% K<sup>−1</sup>. We observed that the spectral color coordinates varied linearly with temperature within a specific range, suggesting its potential application as a means of temperature measurement. Furthermore, employing the non-thermally coupled levels of I<sub>546</sub>/I<sub>475</sub> for temperature measurement results in an impressive maximum absolute sensitivity of 8.05% K<sup>−1</sup>, nearly 24 times higher than that achieved through thermally coupled levels alone. The temperature resolution of the synthetic material is basically less than 0.3 K with high thermal stability. Therefore, Er/Yb:Y<sub>3</sub>Al<sub>5</sub>O<sub>12</sub> phosphors hold promise as viable candidates for components in temperature-sensor applications.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"25 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1007/s11664-024-11368-3
P. N. S. B. S. V. Prasad, Syed Ali Hussain, Pavankalyan Thotakura, Pradyut Kumar Sanki
The rapid development of Internet of Things (IoT) technology is driving a transformation in the healthcare sector. This paradigm change provides new opportunities for real-time, ongoing physical parameter monitoring, particularly in remote situations, providing an ideal setting for research and development. IoT device deployment has become widespread, enabling the growth of an automated data exchange ecosystem. However, our capacity to carry out remote monitoring has been constrained by our past dependence on specialized electronic equipment for assessing vital signs such as heart rate (beats per minute [BPM]) and oxygen saturation (SpO2). To address this issue, we developed an innovative technology that makes use of internet connectivity to allow for remote vital sign measurement and monitoring. The main focus of this article is the use of IoT technology to measure and track vital physiological indicators, notably heart rate and oxygen saturation, regardless of a person’s location. In addition, our study aims to create a system that can send out real-time notifications in the event of serious medical emergencies, increasing the likelihood that life-saving actions can be taken in a timely manner.
{"title":"Design and Development of an IoT-Based Embedded System for Continuous Monitoring of Vital Signs","authors":"P. N. S. B. S. V. Prasad, Syed Ali Hussain, Pavankalyan Thotakura, Pradyut Kumar Sanki","doi":"10.1007/s11664-024-11368-3","DOIUrl":"https://doi.org/10.1007/s11664-024-11368-3","url":null,"abstract":"<p>The rapid development of Internet of Things (IoT) technology is driving a transformation in the healthcare sector. This paradigm change provides new opportunities for real-time, ongoing physical parameter monitoring, particularly in remote situations, providing an ideal setting for research and development. IoT device deployment has become widespread, enabling the growth of an automated data exchange ecosystem. However, our capacity to carry out remote monitoring has been constrained by our past dependence on specialized electronic equipment for assessing vital signs such as heart rate (beats per minute [BPM]) and oxygen saturation (SpO2). To address this issue, we developed an innovative technology that makes use of internet connectivity to allow for remote vital sign measurement and monitoring. The main focus of this article is the use of IoT technology to measure and track vital physiological indicators, notably heart rate and oxygen saturation, regardless of a person’s location. In addition, our study aims to create a system that can send out real-time notifications in the event of serious medical emergencies, increasing the likelihood that life-saving actions can be taken in a timely manner.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1007/s11664-024-11366-5
André Siewe Kamegni, Igor Lashkevych
A theoretical prediction of the contribution to the thermo-electromotive force (thermo-EMF) of a thermocouple due to the minority charge carriers in both legs is presented. This prediction is made on the assumption that, at any time, the electrical conductivity of the majority charge carriers (sigma _M) remains very large compared to the electrical conductivity of the minority carriers (sigma _m) ((sigma _Mgg sigma _m)). The expression has also been analyzed in order to find strategies to reduce its negative impact on the thermo-EMF of the thermocouple. Finally, calculations were carried out in the case of the thermocouple made of silicon thermoelements. The results show that the presence of minority carriers in the thermocouple legs can either positively or negatively affect the generated thermo-EMF. Whenever the contribution is negative, its magnitude may be reduced by widening the bandgap of the N-type leg and/or narrowing that of the p-type leg, adjusting the length of the legs, or intensifying recombinations on the surfaces of the P-type leg
本文从理论上预测了热电偶的热电动势(thermo-EMF)是由两条腿上的少数电荷载流子造成的。这一预测是基于以下假设做出的:在任何时候,多数电荷载流子的电导率(sigma _M)与少数载流子的电导率(sigma _Mggsigma _m)相比都非常大。还对该表达式进行了分析,以便找到减少其对热电偶热电磁场负面影响的策略。最后,对硅热电偶进行了计算。结果表明,热电偶支脚中少数载流子的存在会对产生的热电磁场产生积极或消极的影响。如果是负面影响,则可以通过拓宽 N 型引脚的带隙和/或缩小 P 型引脚的带隙、调整引脚长度或加强 P 型引脚表面的重组来降低影响程度。
{"title":"Assessment of the Contribution of Minority Carriers to the Thermo-electromotive Force of Thermoelectric Generators in the Case Where the Electrical Conductivity of the Majority Carriers Remains Very Large Compared to that of the Minority Carriers","authors":"André Siewe Kamegni, Igor Lashkevych","doi":"10.1007/s11664-024-11366-5","DOIUrl":"https://doi.org/10.1007/s11664-024-11366-5","url":null,"abstract":"<p>A theoretical prediction of the contribution to the thermo-electromotive force (thermo-EMF) of a thermocouple due to the minority charge carriers in both legs is presented. This prediction is made on the assumption that, at any time, the electrical conductivity of the majority charge carriers <span>(sigma _M)</span> remains very large compared to the electrical conductivity of the minority carriers <span>(sigma _m)</span> (<span>(sigma _Mgg sigma _m)</span>). The expression has also been analyzed in order to find strategies to reduce its negative impact on the thermo-EMF of the thermocouple. Finally, calculations were carried out in the case of the thermocouple made of silicon thermoelements. The results show that the presence of minority carriers in the thermocouple legs can either positively or negatively affect the generated thermo-EMF. Whenever the contribution is negative, its magnitude may be reduced by widening the bandgap of the <i>N</i>-type leg and/or narrowing that of the <i>p</i>-type leg, adjusting the length of the legs, or intensifying recombinations on the surfaces of the <i>P</i>-type leg</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1007/s11664-024-11429-7
Wentao Li
The existence of a variety of two-dimensional (2D) carbon allotropes with different carbon frameworks has provided an unprecedented platform to explore novel properties and potential applications beyond graphene. In this work, the strain effects on the structural, electronic, and thermal transport properties of the γ-graphyne and twin graphene sheets have been systematically clarified through first-principles calculations. Regardless of the geometrical similarities of the two considered 2D carbon allotropes, our results indicate that the acetylenic linkages in the γ-graphyne and the AA-stacked aromatic rings in the twin graphene are capable of resulting in the notable deviations in their electronic and thermal transport properties, as well as the strain-dependent behaviors. Both of the two sheets possess an intrinsic semiconducting nature with a tunable direct bandgap that depends on the biaxial strains. The thermal conductivity of the γ-graphyne is significantly suppressed compared to the twin graphene counterpart. Moreover, the heat transfer of the two sheets can be further enhanced by the tensile strains, and a dramatic increase can be obtained in the strained γ-graphyne sheet. Thus, the effectively tunable electronic and thermal transport properties revealed in this work imply the great potential of the two 2D carbon allotropes, and the comparative study also uncovers the structural effect of the carbon networks on their novel properties and strain responses.
{"title":"Effect of Biaxial Strain on Structural, Electronic, and Thermal Transport Properties of Twin Graphene: A Comparative Study with γ-graphyne","authors":"Wentao Li","doi":"10.1007/s11664-024-11429-7","DOIUrl":"https://doi.org/10.1007/s11664-024-11429-7","url":null,"abstract":"<p>The existence of a variety of two-dimensional (2D) carbon allotropes with different carbon frameworks has provided an unprecedented platform to explore novel properties and potential applications beyond graphene. In this work, the strain effects on the structural, electronic, and thermal transport properties of the <i>γ</i>-graphyne and twin graphene sheets have been systematically clarified through first-principles calculations. Regardless of the geometrical similarities of the two considered 2D carbon allotropes, our results indicate that the acetylenic linkages in the <i>γ</i>-graphyne and the AA-stacked aromatic rings in the twin graphene are capable of resulting in the notable deviations in their electronic and thermal transport properties, as well as the strain-dependent behaviors. Both of the two sheets possess an intrinsic semiconducting nature with a tunable direct bandgap that depends on the biaxial strains. The thermal conductivity of the <i>γ</i>-graphyne is significantly suppressed compared to the twin graphene counterpart. Moreover, the heat transfer of the two sheets can be further enhanced by the tensile strains, and a dramatic increase can be obtained in the strained <i>γ</i>-graphyne sheet. Thus, the effectively tunable electronic and thermal transport properties revealed in this work imply the great potential of the two 2D carbon allotropes, and the comparative study also uncovers the structural effect of the carbon networks on their novel properties and strain responses.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}