Shuqi Yu;Antonin Gallet;Iosif Demirtzioglou;Sheherazade Lamkadmi Azouigui;Nayla El Dahdah;Romain Brenot
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引用次数: 0
Abstract
We introduce a semiconductor optical amplifier (SOA) chip with high gain (>40 dB) and high saturation power (>21 dBm) with moderate drive current (1.3A). A design model for optimizing the new dual-section SOA concept is presented. The model predictions are in very good agreement with the measurement results on fabricated chips. Using the gain and saturation output power product as the figure of merit, it shows the best-reported trade-off result so far. However, due to the slight degradation of the noise figure that ensued, an advanced design is introduced, enabling the optimization of the noise figure in addition to the gain and saturation output power.
期刊介绍：
The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.
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