Compact Multifunctional 180° Hybrid-Based 300-GHz Subharmonic I/Q Downconversion Resistive Mixers in 130-nm SiGe Process

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2024-01-24 DOI:10.1109/LSSC.2024.3357810
Liang Zhang;Fengjun Chen;Xu Cheng;Jiang-An Han;Xianhu Luo;Changxing Lin;Wei Su
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Abstract

In this letter, a compact multifunctional 180° hybrid suitable for subharmonic in-phase/quadrature (I/Q) mixers is proposed. To feed LO and RF signals at different frequencies and distribute dc supply, the hybrid combines an out-of-phase dual balun, two in-phase power dividers based on T-junction and coupled lines, and four zero-ohm transmission lines (ZTLs) into a single passive component. Chip size, insertion loss, and bandwidth can all be improved by reducing the number of passive components cascaded in the circuit. The proposed hybrid’s footprint is further minimized by employing redundant line and compensation capacitor techniques. In a 130-nm SiGe BiCMOS technology, two proof-of-concept subharmonic I/Q downconversion resistive mixers with/without an on-chip LO quadrupler are implemented. Both mixers feature wideband HBT-based IF amplifiers and emitter followers, which eliminate the need for dc-blocking capacitors that constrict the IF bandwidth. The mixer, without an integrated LO multiplier, occupies an area of $0.685\times 0.692\,\,{\mathrm{ mm}}^{2}$ and achieves a measured conversion gain of approximately 0 dB from 255 to 310 GHz. The mixer with an on-chip LO quadrupler exhibits a conversion gain of approximately −1 dB from 270 to 300 GHz and a 3-dB IF bandwidth from 0.01 to 7 GHz. Additionally, the measured image rejection ratio (IRR) is greater than 20 dB within the operating frequencies.
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基于 180° 混合技术的紧凑型多功能 300-GHz 次谐波 I/Q 下变频电阻混频器,采用 130 纳米硅锗工艺制造
本文提出了一种适用于次谐波同相/正交(I/Q)混频器的紧凑型多功能 180° 混合器。为了馈入不同频率的 LO 和 RF 信号并分配直流电源,该混合器将一个相位外双平衡器、两个基于 T 型结和耦合线的同相功率分配器以及四根零欧姆传输线 (ZTL) 组合成一个无源元件。通过减少电路中级联的无源元件数量,芯片尺寸、插入损耗和带宽均可得到改善。通过采用冗余线路和补偿电容器技术,进一步减小了拟议混合电路的占地面积。在 130 纳米 SiGe BiCMOS 技术中,实现了两个具有/不具有片上 LO 四倍频器的亚谐波 I/Q 下变频电阻混频器的概念验证。这两款混频器都采用了基于 HBT 的宽带中频放大器和发射极跟随器,无需使用限制中频带宽的直流阻断电容器。不带集成 LO 倍增器的混频器占地面积为 0.685/times 0.692\,\,{\mathrm{mm}}^{2}$,在 255 至 310 GHz 范围内实现了约 0 dB 的实测转换增益。带有片上 LO 四倍频器的混频器在 270 至 300 GHz 范围内的转换增益约为 -1 dB,在 0.01 至 7 GHz 范围内的中频带宽为 3 dB。此外,所测得的图像抑制比 (IRR) 在工作频率范围内大于 20 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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