Pub Date : 2024-10-08DOI: 10.1109/LSSC.2024.3476194
Marco Privitera;Alfio Dario Grasso;Andrea Ballo;Massimo Alioto
A four-stage operational transconductance amplifier (OTA) for ultralow-power applications is introduced in this letter. The proposed circuit inclusive of frequency compensation requires minimal transistor count and passives, overcoming the traditionally difficult compensation of four-stage OTAs and bringing it back to the simplicity of three-stage OTAs. At the same time, the proposed circuit achieves high power efficiency, as evidenced by the > $3.7times $ (> $11.3times $ ) improvement in the large-signal (small-signal) power efficiency figure of merit ${mathrm { FOM}}_{L}~({mathrm { FOM}}_{S})$ , compared to prior four-stage OTAs (sub-1 V multistage OTAs). Thanks to the lower sensitivity of the phase margin to the load capacitance, the proposed OTA remains stable under a wide range of loads (double-sided as in any three- and four-stage OTA), achieving a max/min ratio of the load capacitance of > $100times $ .
本信介绍了一种用于超低功耗应用的四级运算跨导放大器（OTA）。所提出的电路包括频率补偿，只需最少的晶体管数量和无源器件，克服了四级 OTA 传统上难以补偿的问题，使其回归到三级 OTA 的简单性。同时，与之前的四级 OTA（1 V 以下的多级 OTA）相比，所提出的电路实现了较高的功率效率，其大信号（小信号）功率效率优值 ${mathrm { FOM}}_{L}~({mathrm { FOM}}_{S})$ 提高了 > 3.7 （> $11.3）倍。由于相位裕度对负载电容的敏感性较低，因此所提出的 OTA 在各种负载（与任何三级和四级 OTA 一样为双面负载）下都能保持稳定，负载电容的最大/最小比> $100times $。
{"title":"0.6-V, μW-Power Four-Stage OTA With Minimal Components, and 100× Load Range","authors":"Marco Privitera;Alfio Dario Grasso;Andrea Ballo;Massimo Alioto","doi":"10.1109/LSSC.2024.3476194","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3476194","url":null,"abstract":"A four-stage operational transconductance amplifier (OTA) for ultralow-power applications is introduced in this letter. The proposed circuit inclusive of frequency compensation requires minimal transistor count and passives, overcoming the traditionally difficult compensation of four-stage OTAs and bringing it back to the simplicity of three-stage OTAs. At the same time, the proposed circuit achieves high power efficiency, as evidenced by the >\u0000<inline-formula> <tex-math>$3.7times $ </tex-math></inline-formula>\u0000 (>\u0000<inline-formula> <tex-math>$11.3times $ </tex-math></inline-formula>\u0000) improvement in the large-signal (small-signal) power efficiency figure of merit \u0000<inline-formula> <tex-math>${mathrm { FOM}}_{L}~({mathrm { FOM}}_{S})$ </tex-math></inline-formula>\u0000, compared to prior four-stage OTAs (sub-1 V multistage OTAs). Thanks to the lower sensitivity of the phase margin to the load capacitance, the proposed OTA remains stable under a wide range of loads (double-sided as in any three- and four-stage OTA), achieving a max/min ratio of the load capacitance of >\u0000<inline-formula> <tex-math>$100times $ </tex-math></inline-formula>\u0000.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142452674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, a broadband gallium nitride (GaN) monolithic microwave integrated circuit Doherty power amplifier (DPA) using a compact short-circuited coupler (CSC) is presented. To enhance the bandwidth and reduce the size of integrated DPA, the conventional $lambda $ /2 transmission line in the peaking output matching network is replaced by the CSC structure. Detailed theoretical analysis and design procedures are provided. Based on the proposed solution, a 5.1–7.2-GHz DPA is designed using a 0.12- $mu $ m GaN HEMT process. The fractional bandwidth (FBW) is 34.1%. The measurement results show a saturated output power of 37.2–39 dBm and a 6-dB back-off drain efficiency of 38.4%–50.5% across the design bands with a chip size of $2.6times 2$ .6 mm. The adjacent channel power ratio (ACPR) under 100-MHz single-carrier 64 QAM modulation signal with a 6-dB peak-to-average power ratio (PAPR) excitation is better than −45 dBc with digital predistortion (DPD).
{"title":"Broadband GaN MMIC Doherty Power Amplifier Using Compact Short-Circuited Coupler","authors":"Shun Wan;Wenhua Chen;Guansheng Lv;Yuhang Zhang;Xu Shi;Zhenghe Feng","doi":"10.1109/LSSC.2024.3471855","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3471855","url":null,"abstract":"In this letter, a broadband gallium nitride (GaN) monolithic microwave integrated circuit Doherty power amplifier (DPA) using a compact short-circuited coupler (CSC) is presented. To enhance the bandwidth and reduce the size of integrated DPA, the conventional \u0000<inline-formula> <tex-math>$lambda $ </tex-math></inline-formula>\u0000/2 transmission line in the peaking output matching network is replaced by the CSC structure. Detailed theoretical analysis and design procedures are provided. Based on the proposed solution, a 5.1–7.2-GHz DPA is designed using a 0.12-\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m GaN HEMT process. The fractional bandwidth (FBW) is 34.1%. The measurement results show a saturated output power of 37.2–39 dBm and a 6-dB back-off drain efficiency of 38.4%–50.5% across the design bands with a chip size of \u0000<inline-formula> <tex-math>$2.6times 2$ </tex-math></inline-formula>\u0000.6 mm. The adjacent channel power ratio (ACPR) under 100-MHz single-carrier 64 QAM modulation signal with a 6-dB peak-to-average power ratio (PAPR) excitation is better than −45 dBc with digital predistortion (DPD).","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142452698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-25DOI: 10.1109/LSSC.2024.3467341
Thanh Dat Nguyen;Alessandro Maggi;Gianluca Lazzi;Constantine Sideris
This letter presents a 12 V-compliant 4-channel neural stimulator fabricated in a low-voltage bulk CMOS process. Arrays of current memory cells are used to implement anodic and cathodic current sources to generate anodic and cathodic current ratios that are robust to process-voltage-temperature variations. A novel, fully integrated discharge switch is presented that tolerates an output voltage up to $4times V_{DD}$ , which is the highest reported for low-voltage bulk CMOS monopolar stimulators. The proposed neural stimulator can operate in both constant current mode (CCM) with a $1~mu $ -1.2 mA output current range and constant voltage mode (CVM) with a 1–11 V output voltage range. The output waveform is fully programmable, including cathodic and anodic amplitudes and ratios designed to have excellent charge balancing with only 0.004% charge mismatch.
这封信介绍了一种符合 12 V 标准的 4 通道神经刺激器，采用低压体 CMOS 工艺制造。利用电流存储单元阵列来实现阳极和阴极电流源，从而产生对工艺电压-温度变化具有鲁棒性的阳极和阴极电流比。该器件采用了新型全集成放电开关，可承受高达 $4times V_{DD}$的输出电压，这是低压块状 CMOS 单极刺激器所能承受的最高电压。所提出的神经刺激器可以在输出电流范围为 1~mu $ -1.2 mA 的恒流模式 (CCM) 和输出电压范围为 1-11 V 的恒压模式 (CVM) 下工作。输出波形完全可编程，包括阴极和阳极振幅和比率，其设计具有出色的电荷平衡性能，电荷失配率仅为 0.004%。
{"title":"A 12 V Compliant Multichannel Dual Mode Neural Stimulator With 0.004% Charge Mismatch and a 4×VDD Tolerant On-Chip Discharge Switch in Low-Voltage CMOS","authors":"Thanh Dat Nguyen;Alessandro Maggi;Gianluca Lazzi;Constantine Sideris","doi":"10.1109/LSSC.2024.3467341","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3467341","url":null,"abstract":"This letter presents a 12 V-compliant 4-channel neural stimulator fabricated in a low-voltage bulk CMOS process. Arrays of current memory cells are used to implement anodic and cathodic current sources to generate anodic and cathodic current ratios that are robust to process-voltage-temperature variations. A novel, fully integrated discharge switch is presented that tolerates an output voltage up to \u0000<inline-formula> <tex-math>$4times V_{DD}$ </tex-math></inline-formula>\u0000, which is the highest reported for low-voltage bulk CMOS monopolar stimulators. The proposed neural stimulator can operate in both constant current mode (CCM) with a \u0000<inline-formula> <tex-math>$1~mu $ </tex-math></inline-formula>\u0000-1.2 mA output current range and constant voltage mode (CVM) with a 1–11 V output voltage range. The output waveform is fully programmable, including cathodic and anodic amplitudes and ratios designed to have excellent charge balancing with only 0.004% charge mismatch.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142438490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter presents an analog in-memory computing (IMC) macro utilizing 14 nm MRAM technology. To facilitate energy-efficient high-throughput multiply accumulate (MAC) operations, a multi-bit weight is introduced using stacked magnetic tunnel junction architecture and an analog bit-parallel MAC (ABP-MAC) scheme is proposed. This approach delivers 3.3 times better TOPS/mm2 than the state-of-the-art MRAM-based IMC macro. Additionally, a comprehensive calibration technique significantly improves computational accuracy across 72 IMC macros. The proposed IMC macro achieves 18.29 TOPS/mm2 and 340.8 TOPS/W with 1-bit normalization and classification accuracy of 90.2% with the Google speech commands dataset.
{"title":"A 14 nm MRAM-Based Multi-bit Analog In-Memory Computing With Process-Variation Calibration for 72 Macros-Based Accelerator","authors":"Sungmeen Myung;Seok-Ju Yun;Minje Kim;Wooseok Yi;Jaehyuk Lee;Jangho An;Kyoung-Rog Lee;Chang-Woo Shin;Seungchul Jung;Soonwan Kwon","doi":"10.1109/LSSC.2024.3465595","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3465595","url":null,"abstract":"This letter presents an analog in-memory computing (IMC) macro utilizing 14 nm MRAM technology. To facilitate energy-efficient high-throughput multiply accumulate (MAC) operations, a multi-bit weight is introduced using stacked magnetic tunnel junction architecture and an analog bit-parallel MAC (ABP-MAC) scheme is proposed. This approach delivers 3.3 times better TOPS/mm2 than the state-of-the-art MRAM-based IMC macro. Additionally, a comprehensive calibration technique significantly improves computational accuracy across 72 IMC macros. The proposed IMC macro achieves 18.29 TOPS/mm2 and 340.8 TOPS/W with 1-bit normalization and classification accuracy of 90.2% with the Google speech commands dataset.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142430726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-19DOI: 10.1109/LSSC.2024.3463697
Meng Wu;Wenjie Ren;Peiyu Chen;Wentao Zhao;Tianyu Jia;Le Ye
In this letter, we propose an SRAM-based systolic digital compute-in-memory (S2D-CIM) framework which enables flexible input dataflow and mapping strategy to enhance the effective energy efficiency (EE), area efficiency, and writing bandwidth for practical CIM with innovations: 1) multistage domino data path (DDP); 2) a configurable asynchronous timing scheme; and 3) a 2-D burst writing scheme. The proposed S2D-CIM is fabricated using TSMC 22-nm technology and achieves 9.19 and 24.4 TOPS/W peak EE in systolic mode and broadcast mode, respectively, at full precision of 8-bit input, 8-bit weight, and 21-bit output. Compared with state of the arts, it achieves $1.67times $ effective EE improvement. Thanks to reusing introduced DDP, fast 2-D weight update is realized and gains 1.187 Tb/s writing bandwidth, which is $14.3times $ better than that of normal SRAM macro with the same capacity.
{"title":"S2D-CIM: SRAM-Based Systolic Digital Compute-in-Memory Framework With Domino Data Path Supporting Flexible Vector Operation and 2-D Weight Update","authors":"Meng Wu;Wenjie Ren;Peiyu Chen;Wentao Zhao;Tianyu Jia;Le Ye","doi":"10.1109/LSSC.2024.3463697","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3463697","url":null,"abstract":"In this letter, we propose an SRAM-based systolic digital compute-in-memory (S2D-CIM) framework which enables flexible input dataflow and mapping strategy to enhance the effective energy efficiency (EE), area efficiency, and writing bandwidth for practical CIM with innovations: 1) multistage domino data path (DDP); 2) a configurable asynchronous timing scheme; and 3) a 2-D burst writing scheme. The proposed S2D-CIM is fabricated using TSMC 22-nm technology and achieves 9.19 and 24.4 TOPS/W peak EE in systolic mode and broadcast mode, respectively, at full precision of 8-bit input, 8-bit weight, and 21-bit output. Compared with state of the arts, it achieves \u0000<inline-formula> <tex-math>$1.67times $ </tex-math></inline-formula>\u0000 effective EE improvement. Thanks to reusing introduced DDP, fast 2-D weight update is realized and gains 1.187 Tb/s writing bandwidth, which is \u0000<inline-formula> <tex-math>$14.3times $ </tex-math></inline-formula>\u0000 better than that of normal SRAM macro with the same capacity.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142438512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter presents a reconfigurable floating-point compute-in-memory (FP-CIM) macro that preprocesses the exponent in the analog domain, enhancing the energy efficiency of edge devices for the floating-point (FP) inference. The presented FP-CIM macro supports FP8 inference, while can be configured to BP16 precision in a segmented computation manner. Furthermore, a time-domain analog-to-digital converter facilitates the analog compute-in-memory (CIM) macro while improving energy efficiency by sharing the counter and quantizing in a coarse-fine structure. Fabricated in a 28-nm CMOS process, the presented FP-CIM macro achieves 314.6-TFLOPS/W energy efficiency and 12.13-TFLOPS/mm2 area efficiency at the FP8 mode.
{"title":"A Reconfigurable Floating-Point Compute-in-Memory With Analog Exponent Preprocesses","authors":"Pengyu He;Yuanzhe Zhao;Heng Xie;Yang Wang;Shouyi Yin;Li Li;Yan Zhu;Rui P. Martins;Chi-Hang Chan;Minglei Zhang","doi":"10.1109/LSSC.2024.3463208","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3463208","url":null,"abstract":"This letter presents a reconfigurable floating-point compute-in-memory (FP-CIM) macro that preprocesses the exponent in the analog domain, enhancing the energy efficiency of edge devices for the floating-point (FP) inference. The presented FP-CIM macro supports FP8 inference, while can be configured to BP16 precision in a segmented computation manner. Furthermore, a time-domain analog-to-digital converter facilitates the analog compute-in-memory (CIM) macro while improving energy efficiency by sharing the counter and quantizing in a coarse-fine structure. Fabricated in a 28-nm CMOS process, the presented FP-CIM macro achieves 314.6-TFLOPS/W energy efficiency and 12.13-TFLOPS/mm2 area efficiency at the FP8 mode.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142438608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-17DOI: 10.1109/LSSC.2024.3462559
Kim-Hoang Nguyen;Quyet Nguyen;Quynh-Trang Nguyen;Thanh-Tung Vu;Woojin Ahn;Loan Pham-Nguyen;Hanh-Phuc Le;Minkyu Je
A fully integrated dynamic-voltage-scaling stimulator IC, consisting of a novel reconfigurable supply modulator (RSM) and 12 high-voltage-tolerant channel drivers, for cochlear implants, is presented, utilizing a 180-nm standard CMOS process. The RSM is designed to adaptively generate one of four supply voltage levels ranging from 2.6 to 11.3 V, effectively stimulating the cochlea with varying electrode-tissue-interface impedance and stimulus currents while offering improved power efficiency. The channel driver design is miniaturized to support high-channel-count applications within a single IC. Additional excessive current protection is implemented to ensure charge balancing between biphasic stimulating pulses, complementing the electrode-shorting technique.
{"title":"A Fully Integrated Dynamic-Voltage-Scaling Stimulator IC for Cochlear Implants","authors":"Kim-Hoang Nguyen;Quyet Nguyen;Quynh-Trang Nguyen;Thanh-Tung Vu;Woojin Ahn;Loan Pham-Nguyen;Hanh-Phuc Le;Minkyu Je","doi":"10.1109/LSSC.2024.3462559","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3462559","url":null,"abstract":"A fully integrated dynamic-voltage-scaling stimulator IC, consisting of a novel reconfigurable supply modulator (RSM) and 12 high-voltage-tolerant channel drivers, for cochlear implants, is presented, utilizing a 180-nm standard CMOS process. The RSM is designed to adaptively generate one of four supply voltage levels ranging from 2.6 to 11.3 V, effectively stimulating the cochlea with varying electrode-tissue-interface impedance and stimulus currents while offering improved power efficiency. The channel driver design is miniaturized to support high-channel-count applications within a single IC. Additional excessive current protection is implemented to ensure charge balancing between biphasic stimulating pulses, complementing the electrode-shorting technique.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142438511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1109/LSSC.2024.3461158
Dongha Lee;Seki Kim;Takahiro Nomiyama;Dong-Hoon Jung;Dongsu Kim;Jongwoo Lee
This letter introduces a 10 A computational digital LDO (CDLDO) for mobile SoC application specifically targeting a big CPU core. The proposed CDLDO eliminates the power-FET area overhead by reusing power gating switches (PGSs) already distributed throughout the entire CPU. The CDLDO employs a time-based exponential control (TEC) with a slope detector to achieve fast-transient response and improve stability. Furthermore, a step-back and a negative-step control are introduced to mitigate the effect of the propagation delay between the controller and the PGSs. Additionally, a pre-computational scheme significantly reduces calculation time and relaxes timing constraints during synthesis. The proposed CDLDO is implemented in 3 nm GAAFET CMOS process. An implemented IC of eight distributed CDLDO units provides a maximum load current of 10 A with a current density of 263 A/mm2. The CDLDO shows 94 mV droop under 6.5 A/1 ns load transition.
这封信介绍了一种适用于移动 SoC 应用的 10 A 计算数字 LDO（CDLDO），专门针对大型 CPU 内核。所提出的 CDLDO 通过重复使用分布在整个 CPU 中的功率门控开关 (PGS)，消除了功率场效应晶体管的面积开销。CDLDO 采用带有斜率检测器的时基指数控制 (TEC)，以实现快速瞬态响应并提高稳定性。此外，还引入了退步和负步控制，以减轻控制器和 PGS 之间传播延迟的影响。此外，预计算方案大大减少了计算时间，并放宽了合成过程中的时序限制。所提出的 CDLDO 采用 3 nm GAAFET CMOS 工艺实现。由八个分布式 CDLDO 单元组成的集成电路可提供 10 A 的最大负载电流，电流密度为 263 A/mm2。CDLDO 在 6.5 A/1 ns 负载转换下显示出 94 mV 下降。
{"title":"A Computational Digital LDO With Distributed Power-Gating Switches and Time-Based Fast-Transient Controller for Mobile SoC Application","authors":"Dongha Lee;Seki Kim;Takahiro Nomiyama;Dong-Hoon Jung;Dongsu Kim;Jongwoo Lee","doi":"10.1109/LSSC.2024.3461158","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3461158","url":null,"abstract":"This letter introduces a 10 A computational digital LDO (CDLDO) for mobile SoC application specifically targeting a big CPU core. The proposed CDLDO eliminates the power-FET area overhead by reusing power gating switches (PGSs) already distributed throughout the entire CPU. The CDLDO employs a time-based exponential control (TEC) with a slope detector to achieve fast-transient response and improve stability. Furthermore, a step-back and a negative-step control are introduced to mitigate the effect of the propagation delay between the controller and the PGSs. Additionally, a pre-computational scheme significantly reduces calculation time and relaxes timing constraints during synthesis. The proposed CDLDO is implemented in 3 nm GAAFET CMOS process. An implemented IC of eight distributed CDLDO units provides a maximum load current of 10 A with a current density of 263 A/mm2. The CDLDO shows 94 mV droop under 6.5 A/1 ns load transition.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142438609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-11DOI: 10.1109/LSSC.2024.3458453
Yicheng Wang;Zhaowu Wang;Zhenyu Wang;Xiaochen Tang;Yong Wang
In this letter, an X-band expandable reconfigurable 1:2 power divider switch (PDSW) is proposed for switched beam-forming networks. A switched inductor-artificial transmission line (SI-ATL) is proposed. With proper switch logic, the SI-ATL features two types of transmission line (TL): 1) a $lambda $ /4 TL of $50sqrt {2} ; Omega $ and 2) a TL of $50 ; Omega $ . This enables the PDSW to realize three port states of two corresponding modes, including single-pole–double-throw (SPDT) mode and power divider (PD) mode. The PDSW has the ability to be expanded to an N-stage 1: $2^{N}$ matrix with $2^{2^{N}} - 1$ states. The proposed design is fabricated with a 0.10- $mu $ m GaAs pHEMT process. The measurement results show a $leq 1$ .2-dB insertion loss (IL), a $geq $ 10-dB return loss (RL), and a $geq 40$ -dBm input 3rd-order intercept points (IIP3), in both modes. The isolation is 27–32 dB for SPDT mode and 14–31 dB for PD mode.
{"title":"An X-Band Expandable Reconfigurable 1:2 Power Divider Switch for Switched Beam-Forming Networks in 0.10-µm GaAs Process","authors":"Yicheng Wang;Zhaowu Wang;Zhenyu Wang;Xiaochen Tang;Yong Wang","doi":"10.1109/LSSC.2024.3458453","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3458453","url":null,"abstract":"In this letter, an X-band expandable reconfigurable 1:2 power divider switch (PDSW) is proposed for switched beam-forming networks. A switched inductor-artificial transmission line (SI-ATL) is proposed. With proper switch logic, the SI-ATL features two types of transmission line (TL): 1) a \u0000<inline-formula> <tex-math>$lambda $ </tex-math></inline-formula>\u0000/4 TL of \u0000<inline-formula> <tex-math>$50sqrt {2} ; Omega $ </tex-math></inline-formula>\u0000 and 2) a TL of \u0000<inline-formula> <tex-math>$50 ; Omega $ </tex-math></inline-formula>\u0000. This enables the PDSW to realize three port states of two corresponding modes, including single-pole–double-throw (SPDT) mode and power divider (PD) mode. The PDSW has the ability to be expanded to an N-stage 1:\u0000<inline-formula> <tex-math>$2^{N}$ </tex-math></inline-formula>\u0000 matrix with \u0000<inline-formula> <tex-math>$2^{2^{N}} - 1$ </tex-math></inline-formula>\u0000 states. The proposed design is fabricated with a 0.10-\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m GaAs pHEMT process. The measurement results show a \u0000<inline-formula> <tex-math>$leq 1$ </tex-math></inline-formula>\u0000.2-dB insertion loss (IL), a \u0000<inline-formula> <tex-math>$geq $ </tex-math></inline-formula>\u0000 10-dB return loss (RL), and a \u0000<inline-formula> <tex-math>$geq 40$ </tex-math></inline-formula>\u0000-dBm input 3rd-order intercept points (IIP3), in both modes. The isolation is 27–32 dB for SPDT mode and 14–31 dB for PD mode.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142430743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter demonstrates a Si-Photonic (SiPh)-based 112 Gb/s PAM4 optical receiver frontend using novel single-ended transimpedance amplifier (TIA) architecture that achieves −10 and +5 dBm input optical modulation amplitude (OMA) sensitivity and overload, respectively. To achieve that an overload mitigation circuit is proposed to break the tradeoff between noise and linearity of the shunt feedback CMOS TIAs. The TIA is optimized to provide the best sensitivity and linearity performance at minimum and maximum input OMA, respectively. Implemented in 22-nm FDSOI technology, and designed for 112 Gb/s PAM4 optical links, the TIA achieves more than +15 dBm OMA range with 11 pA/ $surd $ Hz input referred noise while burning only 155 mW from an 1.8-V supply.
本文展示了一种基于硅光子（SiPh）的 112 Gb/s PAM4 光接收器前端，它采用新型单端跨阻抗放大器（TIA）架构，可分别实现 -10 和 +5 dBm 输入光调制幅度（OMA）灵敏度和过载。为实现这一目标，提出了一种过载缓解电路，以打破并联反馈 CMOS TIA 噪声和线性度之间的平衡。该 TIA 经过优化，可分别在最小和最大输入 OMA 条件下提供最佳灵敏度和线性度性能。该 TIA 采用 22-nm FDSOI 技术实现，专为 112 Gb/s PAM4 光链路而设计，实现了超过 +15 dBm 的 OMA 范围，输入参考噪声为 11 pA/ $surd $Hz，而 1.8 V 电源的功耗仅为 155 mW。
{"title":"A 112-Gb/s, -10 dBm Sensitivity, +5 dBm Overload, and SiPh-Based Receiver Frontend in 22-nm FDSOI","authors":"Mahdi Parvizi;Bahar Jalali;Toshi Omori;John Rogers;Li Chen;Long Chen;Ricardo Aroca","doi":"10.1109/LSSC.2024.3457775","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3457775","url":null,"abstract":"This letter demonstrates a Si-Photonic (SiPh)-based 112 Gb/s PAM4 optical receiver frontend using novel single-ended transimpedance amplifier (TIA) architecture that achieves −10 and +5 dBm input optical modulation amplitude (OMA) sensitivity and overload, respectively. To achieve that an overload mitigation circuit is proposed to break the tradeoff between noise and linearity of the shunt feedback CMOS TIAs. The TIA is optimized to provide the best sensitivity and linearity performance at minimum and maximum input OMA, respectively. Implemented in 22-nm FDSOI technology, and designed for 112 Gb/s PAM4 optical links, the TIA achieves more than +15 dBm OMA range with 11 pA/\u0000<inline-formula> <tex-math>$surd $ </tex-math></inline-formula>\u0000Hz input referred noise while burning only 155 mW from an 1.8-V supply.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142276431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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