{"title":"Stability of GaN HEMT Device Under Static and Dynamic Gate Stress","authors":"Linfei Gao;Ze Zhong;Qiyan Zhang;Xiaohua Li;Xinbo Xiong;Shaojun Chen;Longkou Chen;Huaibao Yan;Anle Zhang;Jiajun Han;Wenrong Zhuang;Feng Qiu;Hsien-Chin Chiu;Shuangwu Huang;Xinke Liu","doi":"10.1109/JEDS.2024.3362048","DOIUrl":null,"url":null,"abstract":"In this work, we investigated the stability of a \n<inline-formula> <tex-math>${p}$ </tex-math></inline-formula>\n-GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. A circuit was designed to improve \n<inline-formula> <tex-math>${p}$ </tex-math></inline-formula>\n-GaN gate stability by using capacitance to release the hole into the \n<inline-formula> <tex-math>${p}$ </tex-math></inline-formula>\n-GaN layer to mitigate the threshold voltage shift. Through pulse I-V measurement and positive bias temperature instability (PBTI) test, the carrier transporting behavior in the gate region achieved dynamic equilibrium at 5 V gate bias. The positive gate shift \n<inline-formula> <tex-math>$(\\Delta V_{\\mathrm{ TH}})$ </tex-math></inline-formula>\n of 0.4 V is observed with increasing voltage from 3 V to 8 V; \n<inline-formula> <tex-math>$\\Delta V_{\\mathrm{ TH}}$ </tex-math></inline-formula>\n initially drops smoothly after release stresses by external capacitance discharge. Finally, integrated passive components and \n<inline-formula> <tex-math>${p}$ </tex-math></inline-formula>\n-GaN gate HEMT circuit are recommended to mitigate the \n<inline-formula> <tex-math>$V_{\\mathrm{ TH}}$ </tex-math></inline-formula>\n instability for E-mode HEMT.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.0000,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10422723","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10422723/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we investigated the stability of a
${p}$
-GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. A circuit was designed to improve
${p}$
-GaN gate stability by using capacitance to release the hole into the
${p}$
-GaN layer to mitigate the threshold voltage shift. Through pulse I-V measurement and positive bias temperature instability (PBTI) test, the carrier transporting behavior in the gate region achieved dynamic equilibrium at 5 V gate bias. The positive gate shift
$(\Delta V_{\mathrm{ TH}})$
of 0.4 V is observed with increasing voltage from 3 V to 8 V;
$\Delta V_{\mathrm{ TH}}$
initially drops smoothly after release stresses by external capacitance discharge. Finally, integrated passive components and
${p}$
-GaN gate HEMT circuit are recommended to mitigate the
$V_{\mathrm{ TH}}$
instability for E-mode HEMT.
期刊介绍:
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.