{"title":"A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs","authors":"Fanzhao Meng;Yi Li;Jun Li;Jie Liang;Jianhua Zhang","doi":"10.1109/JEDS.2024.3366554","DOIUrl":null,"url":null,"abstract":"This paper reports a performance optimized operational amplifier (OPAMP) using transconductance enhancement topology based on the amorphous indium- gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The performance of TFTs is enhanced by N2O plasma treatment that presents electrical characteristics suitable for accomplishing an OPAMP. The circuit consists of 19 TFTs with measured phase margin (PM) and unity-gain frequency (UGF) of 35.8° and 200 kHz, respectively. The DC power consumption (PDC) is 0.68 mW. Notably, it exhibits a high voltage gain (Av) of 32.67 dB and bandwidth (BW) of 15 kHz with 15 V DC supply voltage. Scarcely any work was reported with such a high gain while having a sufficient BW. The OPAMP demonstrates excellent performance among all a-IGZO literature and provides substantial support for the future development of TFT-based integrated circuits (ICs).","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.0000,"publicationDate":"2024-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10438721","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10438721/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This paper reports a performance optimized operational amplifier (OPAMP) using transconductance enhancement topology based on the amorphous indium- gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The performance of TFTs is enhanced by N2O plasma treatment that presents electrical characteristics suitable for accomplishing an OPAMP. The circuit consists of 19 TFTs with measured phase margin (PM) and unity-gain frequency (UGF) of 35.8° and 200 kHz, respectively. The DC power consumption (PDC) is 0.68 mW. Notably, it exhibits a high voltage gain (Av) of 32.67 dB and bandwidth (BW) of 15 kHz with 15 V DC supply voltage. Scarcely any work was reported with such a high gain while having a sufficient BW. The OPAMP demonstrates excellent performance among all a-IGZO literature and provides substantial support for the future development of TFT-based integrated circuits (ICs).
期刊介绍：
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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