{"title":"Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage","authors":"Yanning Chen;Kai Wang;Jin Shao;Fang Liu;Xinhuan Yang;Jianyu Zhang;Qianqian Sang;Chuanzheng Wang;Yuanfu Zhao","doi":"10.1109/TDMR.2024.3359187","DOIUrl":null,"url":null,"abstract":"In practical electronic setups, most circuits are operating under dynamic condition, thus the aging models derived under static bias could lead to unexpected deviation from the real circumstance and even errors. Here in this paper, we studied the device degradation under long-period dynamic stress, which aims to mimic the device degradation at alternating voltages. Combined with the degradation characterization, models considering partial recovery after stress removal and degradation at different stress levels are developed. By comparing the test data with the model calculation, it can be seen that the calculation error of the model is within 3%, which meets the requirement of practical engineering. The proposed models could benefit the reliability design against dynamic hot carrier degradation for modern circuits.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 1","pages":"123-128"},"PeriodicalIF":2.5000,"publicationDate":"2024-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10415873/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In practical electronic setups, most circuits are operating under dynamic condition, thus the aging models derived under static bias could lead to unexpected deviation from the real circumstance and even errors. Here in this paper, we studied the device degradation under long-period dynamic stress, which aims to mimic the device degradation at alternating voltages. Combined with the degradation characterization, models considering partial recovery after stress removal and degradation at different stress levels are developed. By comparing the test data with the model calculation, it can be seen that the calculation error of the model is within 3%, which meets the requirement of practical engineering. The proposed models could benefit the reliability design against dynamic hot carrier degradation for modern circuits.
期刊介绍：
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
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